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159 条记录 (耗时 0.009 秒)

    Process for the thermal treatment of substrates, particularly semiconductor wafers
    12.
    发明公开
    Process for the thermal treatment of substrates, particularly semiconductor wafers 失效
    基板，特别是半导体晶片的热处理工艺

    公开(公告)号：EP0119472A3

    公开(公告)日：1987-03-04

    申请号：EP84101578

    申请日：1984-02-16

    申请人： Siemens Aktiengesellschaft

    发明人： Sigusch, Reiner, Dipl.-Ing. ,  Wipper, Ludwig, Ing. grad.

    IPC分类号： G03F07/26

    CPC分类号： G03F7/40 ,  C30B35/00

    摘要： Die Erfindung betrifft eine Vorrichtung zur Temperatur behandlung von Substraten, insbesondere von Halbleiter kristallscheiben, bestehend aus einem Träger (1) für die Aufnahme der zu behandelnden Substrate (2), eine den Träger (1) aufnehmende rahmenförmige Halterung (3), die mit einem zeitgesteuerten Druckluftzylinder (5) gekoppelt und axial über eine Führung (6) verschiebbar ist und einer Heizeinrichtung. Die Heizeinrichtung ist mit einer Vakuum ansaugvorrichtung (8) gekoppelt und enthält mehrere ron denförmige Heizplatten (7), gegen die die im Träger (1) befindlichen Substrate (2) gesaugt werden. Die Vorrichtung wird verwendet für Niedrigtemperaturprozesse in der Halb leitertechnologie, insbesondere bei Fotolithographiepro zessen, und erspart unnötige Umhordvorgänge.

    Positive photoresist stripping composition
    13.
    发明公开
    Positive photoresist stripping composition 失效
    正极光电剥离组合物

    公开(公告)号：EP0145973A3

    公开(公告)日：1986-09-17

    申请号：EP84113854

    申请日：1984-11-16

    申请人： ALLIED CORPORATION

    发明人： Thomas, Evan Gower ,  Smalley, Edmund Walter ,  Cook, Kane David

    IPC分类号： G03F07/26

    CPC分类号： G03F7/425

    摘要： Piperazine containing positive photoresist strippin compositions are provided. Formulations include N aminoalkylpiperazines with the formula
    bis-N-aminoalkylpiperazines of the formula
    N-hydroxyalkylpiperazine of the formula
    and bis-hydroxyalkylpiperazines with structure
    In the above formulae n = 1-6. Also included are piperazine derivatives such as those of the above formulae with a branch chain alkyl of 1-6 C atoms, and 5-6 C atom cycloalkyl substituted compounds wherein the cycloalkyl is substituted for -(CH 2 ) n - Components which may be mixed with the above described piperazine in preparing the positive photoresist stripping compositions of the invention include alkyl or cycloalkyl-2-pyrrolidones of the formula
    Other amide type solvents with the boiling point in excess of 200°C as well as high boiling diethylene glycol ethers may also be incorporated.

    Alkaline solution for developing positive photoresists
    14.
    发明公开
    Alkaline solution for developing positive photoresists 失效
    用于发展积极光电的碱性溶液

    公开(公告)号：EP0124297A3

    公开(公告)日：1986-07-09

    申请号：EP84302254

    申请日：1984-04-02

    申请人： SUMITOMO CHEMICAL COMPANY, LIMITED

    发明人： Niwa, Kenji ,  Ichikawa, Ichiro

    IPC分类号： G03F07/26

    CPC分类号： G03F7/322

    摘要： A developer for positive photoresists comprises an aqueous solution of (a) a quaternary ammonium hydroxide of the formula:
    wherein Ri, R 2 , R 3 and R 4 are each a C 1-4 alkyl, C1-5 or hydroxyalkyl group, and (b) at least one development modifier which is a water-soluble aliphatic ketone, cyclic ether or tertiary amine, and optionally, (c) at least one water-soluble primary or secondary amines as further development modifier. Preferred modifiers (b) are C3-8 ketones, 3- to 6-membered alicyclic ethers and C3-6 aliphatic amines. Hydroxide (a) can be tetramethyl ammonium or trimethyl ethanol ammonium hydroxide. A quinonediazide positive photoresist material is imagewise exposed and treated in the developer, to give a resist of high sensitivity and resolution, suitable for use in an electronic component.

    Halogen finishing of flexographic printing plates containing butadiene/acrylonitrile copolymers
    16.
    发明公开
    Halogen finishing of flexographic printing plates containing butadiene/acrylonitrile copolymers 失效
    包含丁二烯/丙烯腈共聚物的复合印刷板的卤化物整理

    公开(公告)号：EP0096835A3

    公开(公告)日：1985-05-22

    申请号：EP83105604

    申请日：1983-06-08

    申请人： E.I. DU PONT DE NEMOURS AND COMPANY

    发明人： Fickes, Michael Glenn ,  Rakoczy, Bohdan

    IPC分类号： G03F07/26

    CPC分类号： G03F7/405

    摘要： Process for providing improved solvent resistant surfaces of relief flexographic printing plates prepared by imagewise exposure and liquid development of the unexposed areas of a layer of photosensitive etastomeric composition comprising a high molecular weight butadiene/acrylonitrile copolymer and a monomeric compound wherein, optionally after drying, the developed surface is, in either order, (1) postexposed to actinic radiation, and (2) contacted with two successive aqueous halogen solutions, first, 0.01 to 3.5% by weight aqueous bromine solution for about 15 seconds to 20 minutes or 0.2 to 10% by weight aqueous iodine solution for about 1.0 to 10 minutes, followed by chlorine solution equivalent to that supplied by an aqueous solution, 0.01 to 1.0 molar in NaOCI and 0.012 to 1.2 molar in HCI, for about 15 seconds to 5 minutes.