A method and system for alternating current regulation
    21.
    发明公开
    A method and system for alternating current regulation 审中-公开
    交流功率调节的方法和装置

    公开(公告)号:EP1465037A3

    公开(公告)日:2005-01-12

    申请号:EP04076919.2

    申请日:1999-12-29

    IPC分类号: G05F1/12

    CPC分类号: G05F1/12

    摘要: Circuitry and methods for regulating alternating current regulation uses energy storage and release principles to boost or buck voltage to permit regulated ac operation with parallel and series bi-directional switch elements (12) and (13) operated at either variable duty cycles or frequencies to accommodate bipolar ac operation. Each bi-directional switch element may include a diode bridge (8) or (10) and directionally limited switches such as semiconductor switches. The system can be used to regulate ac even during sub-cycle dips, can be used to simulate controlled dips, can be used to correct power factor for loads, and can be applied in multiphase operations.

    REACTIVE DC SPUTTERING SYSTEM
    23.
    发明授权
    REACTIVE DC SPUTTERING SYSTEM 失效
    反应DC溅射

    公开(公告)号:EP0692138B1

    公开(公告)日:2004-01-21

    申请号:EP94912385.5

    申请日:1994-04-01

    IPC分类号: H01J37/34

    摘要: An enhanced reactive plasma processing method and system useful for deposition of highly insulating films. A variety of alternative embodiments are allowed for varying applications. In one embodiment, a tapped inductor (13 and 14) is switched to ground (9) or some common level to achieve substantial voltage reversal of about 10 % upon detection of an arc condition. This reversal of voltage is maintained long enough to either afford processing advantages or to allow restoration of uniform charge density within the plasma (5) prior to restoration of the initial driving condition. A technique for preventing arc discharges involving periodically either interrupting the supply of power or reversing voltage is effected through a timer system (22) in the power source (1).

    METHOD AND APPARATUS FOR SUBSTRATE BIASING IN MULTIPLE ELECTRODE SPUTTERING SYSTEMS
    25.
    发明公开
    METHOD AND APPARATUS FOR SUBSTRATE BIASING IN MULTIPLE ELECTRODE SPUTTERING SYSTEMS 审中-公开
    方法和装置基板的多电极的溅射系统极化

    公开(公告)号:EP1235947A1

    公开(公告)日:2002-09-04

    申请号:EP00970916.3

    申请日:2000-10-13

    IPC分类号: C23C14/34

    摘要: A method and an apparatus are disclosed for causing ion bombardment of the substrate (3) during sputter deposition of an insulating or conducting material on a substrate (3) when using dual cathode (9, 10) or dual anode sputtering approaches. A novel electrical circuit including a center-tapped transformer (17) is disclosed to permit a controllable potential to be applied to the substrate (3) relative to the plasma potential, without the necessity of an additional power supply. Also disclosed are approaches which permit the use of an biasing supply (19 or 20), either dc or high frequency ac, and which can permit continuous discharging of the surface through alternate ion and electron bombardment.

    SYSTEM FOR CHARACTERIZING AC PROPERTIES OF A PROCESSING PLASMA
    26.
    发明授权
    SYSTEM FOR CHARACTERIZING AC PROPERTIES OF A PROCESSING PLASMA 失效
    系统的等离子处理的交流电流特性的表征

    公开(公告)号:EP0631711B1

    公开(公告)日:2002-03-06

    申请号:EP93907560.2

    申请日:1993-03-18

    IPC分类号: H05H1/00

    摘要: Probe (5) to be inserted in-line in an AC plasma processing system (3) allows accurate, real time determination of plasma parameters such as power and complex impedance over a broad dynamic range. Any need to know power output from a source is avoided and signals are selected to optimize accuracy such that only two alternating signals need be sensed for many applications. Signals are selected such that magnitudes of simple alternating signals can be easily measured as scalar values in a fashion that affords the use of these values to completely characterize the power actually delivered to the processing plasma (2) and its complex impedance in real time. Plasma characterization can be limited to only specific frequencies for more accurate determination. Microstrip directional couplers are used to sense signals from the power transmission. These signals are then utilized to derive simple alternating signals representative of power or voltage. Three or more scalar values representative of the magnitude of the alternating signals and their combination serve as the variable inputs to determine complex reflection coefficient or impedance using known formulas. Use of a sign bit detector or assumptions with respect to the processing plasma (2) is disclosed for complete characterization of the plasma in an efficient manner.

    SYSTEM FOR CHARACTERIZING AC PROPERTIES OF A PROCESSING PLASMA
    28.
    发明公开
    SYSTEM FOR CHARACTERIZING AC PROPERTIES OF A PROCESSING PLASMA 失效
    系统的等离子处理的交流特性的表征。

    公开(公告)号:EP0631711A1

    公开(公告)日:1995-01-04

    申请号:EP93907560.0

    申请日:1993-03-18

    IPC分类号: C23C14 C23F4 H01J37 H05H1

    摘要: Probe (5) to be inserted in-line in an AC plasma processing system (3) allows accurate, real time determination of plasma parameters such as power and complex impedance over a broad dynamic range. Any need to know power output from a source is avoided and signals are selected to optimize accuracy such that only two alternating signals need be sensed for many applications. Signals are selected such that magnitudes of simple alternating signals can be easily measured as scalar values in a fashion that affords the use of these values to completely characterize the power actually delivered to the processing plasma (2) and its complex impedance in real time. Plasma characterization can be limited to only specific frequencies for more accurate determination. Microstrip directional couplers are used to sense signals from the power transmission. These signals are then utilized to derive simple alternating signals representative of power or voltage. Three or more scalar values representative of the magnitude of the alternating signals and their combination serve as the variable inputs to determine complex reflection coefficient or impedance using known formulas. Use of a sign bit detector or assumptions with respect to the processing plasma (2) is disclosed for complete characterization of the plasma in an efficient manner.

    RATE ENHANCED PULSED DC SPUTTERING SYSTEM
    30.
    发明公开

    公开(公告)号:EP3349236A1

    公开(公告)日:2018-07-18

    申请号:EP18158711.4

    申请日:2016-04-15

    IPC分类号: H01J37/34 C23C14/34 C23C14/35

    摘要: A pulsed direct current sputtering system and method are disclosed. The system has a plasma chamber with two targets, two magnetrons and one anode, a first power source, and a second power source. The first power source is coupled to the first magnetron and the anode, and provides a cyclic first-power-source voltage with a positive potential and a negative potential during each cycle between the anode and the first magnetron. The second power source is coupled to the second magnetron and the anode, and provides a cyclic second-power-source voltage. The controller phase-synchronizes and controls the first-power-source voltage and second-power-source voltage to apply a combined anode voltage, and phase-synchronizes a first magnetron voltage with a second magnetron voltage, wherein the combined anode voltage applied to the anode has a magnitude of at least 80 percent of a magnitude of a sum of the first magnetron voltage and the second magnetron voltage.