摘要:
The present invention relates to an air flowmeter in which an air flow rate sensing element and air temperature sensing element are integrated with each other and mounted on a substrate and at the same time the fluid temperature sensing element is formed on a diaphragm, the fluid flowmeter being capable of measuring a fluid flow rate with high accuracy by suppressing the self-heating of the fluid temperature sensing element. In the invention, an air temperature sensor 11 sensing an air temperature, supplied with a pulse signal as a driving signal from a pulse signal source 19, senses an air temperature based on the pulse signal. While the air temperature sensor 11 is self-heated during an electrical current supplying time period by the pulse signal, it is cooled during an electrical current halting time period. Accordingly, the self-heating of the air temperature sensor 11 by the driving signal is suppressed, and a thermal effect on air flow rate sensing elements 5 to 10 disposed in an air flow downstream side of the air temperature sensor 11 is also reduced.
摘要:
A flow rate signal analog-digital conversion circuit 30, an adjustment processing circuit 40 and a chip temperature- sensor circuit 60 are disposed a single semiconductor chip 100 to form an integrated circuit, and a chip temperature signal in a form of digital signal outputted from the chip temperature sensor circuit 60 is inputted into the adjustment processing circuit 40 in which correction reducing temperature dependent error in a series of signal processing circuits is performed. Thereby, a board temperature dependent error in a gas flow rate measuring device can be reduced in which adjustment is performed for digital signals.
摘要:
A Δ Σ type AD converter includes a local D/A converter having a SC integrator which is constructed by an analog switch operated at the first and second timings of an input (1), an analog switch operated at the first and second timings of an input (2), an analog switch operated at the first and second timings without selection of the input, a capacitor charged and discharged by these analog switches and an operational amplifier (21), a comparator (22), a D-type flip-flop (28), a switch (29) and reference voltage sources (30, 31).
摘要:
A sensor device (1) has a sensing layer (A) and an auxiliary layer (B) for supporting the sensing layer, the two layers being superposed on each other in a laminar form. The sensing layer has a vibratory body (11, 13) displaceable in a direction parallel to a junction surface between the two layers. The auxiliary layer (B) is affixed to the sensing layer (A) and a recess or through-hole (10) of a larger area than that of the vibratory body is formed in the auxiliary layer at a part thereof confronting the vibratory body.
摘要:
A method of control of vehicle devices using a collective wiring system for an automobile in which data are transmitted via a series data transmission system (OF) between a plurality of vehicle input terminals (LCU), connected to input devices, and a plurality of vehicle output terminals (LCU), connected to said vehicle devices, under control of a central control unit (CCU) of a stored control program and having a computer (micom, 5), a memory (9, 102, 103) for storing data and a communication interface module (CIM) for operating the actual data transmission between said vehicle input and output terminals (LCU) and said central control unit (CCU).
摘要:
A semiconductor acceleration sensor (1) is formed by a cantilever (4) having a conductive movable electrode (5) of predetermined mass at one end, at least one pair of fixed conductive electrodes (8, 9) which are stationary with respect to the movable electrode (5) located on opposing sides of the movable electrode, and gaps provided between the movable electrode and the fixed electrodes. To prevent the movable electrode becoming fused to the contacted fixed electrode, in a first aspect of this invention, an insulating layer (6) is provided between the movable electrode and fixed electrodes, the layer being either on the movable electrode or on the fixed electrodes and in a second aspect of this invention the movable electrode or, preferably, the fixed electrodes, are formed of a high melting point material. In such a second aspect, to improve adhesion between the high melting point material and a substrate (3a, 3b) to which the fixed electrodes (8′, 9′) are mounted, a lower melting point material is firstly coated on said substrates. In a feature of the invention, a detector unit processing circuit (Figure 20) is described in which the output characteristic of the circuit may be digitally adjusted by suitable switching of a plurality of resistors (Rs, Rf), and in a second feature, the sensor chip and the detector unit integrated circuit are located on a common base (303) and mounted in a hermetically sealed chamber to prevent adverse environmental effects affecting operation of the sensor and detector unit assembly. A gas having a dew point of -40°C or lower is, advantageously, charged into the hermetically sealed chamber.
摘要:
The invention relates to a heating resistor type flow-measuring device that is small-sized, lightweight, and yet capable of adjusting heating temperature of a heating resistor (2) according to the ambient temperature as well as making the initial adjustment. A heating resistor (2), a thermoresistance (3), a group of resistors (6-11), and an amplifier (17) constitute a bridge circuit, and leading terminals of the group of resistors (6-11) are connected to one of input terminals of an amplifier (17) for amplifying an error voltage through MOS transistors (12-16). The heating temperature of the heating resistor (2) can be changed by selecting one of the MOS transistors (12-16) and turning it on. If a plurality of MOS transistors (12-16) are used for adjusting a resistance ratio of the bridge circuit and thus the MOS transistors (12-16) are avoided serving as a part of the bridge circuit, even when ON resistance values of the MOS transistors (12-16) are large, they hardly affect the adjustment of the resistance value of the bridge circuit. Thereby, the sizes of the MOS transistors (12-16) can be made small, reducing an integrated circuit chip to a smaller size.