公开(公告)号：EP3409639A1

公开(公告)日：2018-12-05

申请号：EP18174480.6

申请日：2018-05-28

Applicant: Murata Manufacturing Co., Ltd.

Inventor： FUJII, Hidetoshi

IPC: B81C1/00

CPC classification number: B81C1/00619 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C1/00587 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0142 ,  B81C2201/0198 ,  B81C2201/053

Abstract: The disclosure relates to a method for manufacturing recessed micromechanical structures in a MEMS device wafer. First vertical trenches in the device wafer define the horizontal dimensions of both level and recessed structures. The horizontal face of the device wafer and the vertical sidewalls of the first vertical trenches are then covered with a self-supporting etching mask which is made of a self-supporting mask material, which is sufficiently rigid to remain standing vertically in the location where it was deposited even as the sidewall upon which it was deposited is etched away. Recess trenches are then etched under the protection of the self-supporting mask. The method allows a spike-preventing aggressive etch to be used for forming the recess trenches, without harming the sidewalls in the first vertical trenches.

公开(公告)号：EP3243082B1

公开(公告)日：2018-11-21

申请号：EP16700096.7

申请日：2016-01-04

Applicant: Northrop Grumman LITEF GmbH

Inventor： LEINFELDER, Peter

IPC: G01P21/00 ,  G01P15/08 ,  G01P15/125 ,  G01P15/13

CPC classification number: G01P15/125 ,  B81B2201/0235 ,  B81B2203/051 ,  G01P15/0802 ,  G01P15/131 ,  G01P21/00 ,  G01P2015/0814

公开(公告)号：EP2135839B1

公开(公告)日：2018-11-21

申请号：EP09006279.5

申请日：2009-05-08

Applicant: Garmin Switzerland GmbH

Inventor： Kulach, Christopher J. ,  MacDonald, Paul R.

IPC: B81B7/00

CPC classification number: B81B7/0054 ,  B81B2201/0235 ,  B81B2207/096 ,  H05K1/0271 ,  H05K1/181 ,  H05K2201/09081 ,  H05K2201/10151

Abstract: A system for improving the performance of a microelectromechanical systems (MEMS) device that is housed in a package and implemented on a printed circuit board (PCB) comprises a footprint, an isolation channel, and a bridge. A portion of the isolation channel is removed to mechanically isolate the MEMS device.

公开(公告)号：EP3092499B1

公开(公告)日：2018-10-31

申请号：EP14876635.5

申请日：2014-12-30

Applicant: Robert Bosch GmbH

Inventor： KIM, Bonsang ,  FEYH, Ando ,  GRAHAM, Andrew ,  O'BRIEN, Gary ,  BAUS, Michael ,  MAIER, Ralf ,  KOC, Mariusz

IPC: G01P15/08 ,  G01C19/5769 ,  G01P1/02 ,  G01P1/00 ,  B81B7/00 ,  G01P15/18

CPC classification number: G01C19/5769 ,  B81B7/0016 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2207/012 ,  G01P1/003 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/084 ,  G01P2015/0882 ,  H01L2224/48137 ,  H01L2924/16152

Abstract: In one embodiment, a sensor includes a rigid wafer outer body, a first cavity located within the rigid wafer outer body, a first spring supported by the rigid wafer outer body and extending into the first cavity, a second spring supported by the rigid wafer outer body and extending into the first cavity, and a first sensor structure supported by the first spring and the second spring within the first cavity.

公开(公告)号：EP3382402A1

公开(公告)日：2018-10-03

申请号：EP18163897.4

申请日：2018-03-26

Applicant: Seiko Epson Corporation

Inventor： TANAKA, Satoru

IPC: G01P15/125 ,  G01P15/08

CPC classification number: B81C1/00166 ,  B60R16/0231 ,  B60R25/24 ,  B81B3/0008 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/04 ,  B81B2207/07 ,  B81C2201/0133 ,  B81C2201/0187 ,  G01P15/125 ,  G01P2015/0831

Abstract: A manufacturing method of a physical quantity sensor includes forming a first fixed electrode, a second fixed electrode, and a dummy electrode on a substrate; and a movable body forming. The electrode forming includes forming a first mask layer on the substrate, forming a first electrode material layer by forming a first conductive layer on the substrate and the first mask layer, forming a second conductive layer on the substrate and the first electrode material layer, forming a second mask layer by forming a mask material layer on the second conductive layer, and removing a part of a section of the mask material layer not overlapping the first electrode material layer in plan view, and forming a second electrode material layer by etching the second conductive layer, with the second mask layer as a mask such that the second conductive layer is provided on the first electrode material layer and on the substrate.

公开(公告)号：EP1737786B1

公开(公告)日：2018-06-06

申请号：EP05735119.9

申请日：2005-04-14

Applicant: Analog Devices, Inc.

Inventor： HARNEY, Kieran, P. ,  FELTON, Lawrence, E. ,  NUNAN, Thomas, Kieran ,  ALIE, Susan, A. ,  WACHTMANN, Bruce

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81B7/007 ,  B81B2201/0235 ,  B81C2203/019 ,  H01L2224/16225 ,  H01L2924/1461

Abstract: A MEMS device has at least one conductive path extending from the top facing side of its substrate (having MEMS structure) to the bottom side of the noted substrate. The at least one conductive path extends through the substrate as noted to electrically connect the bottom facing side with the MEMS structure.

公开(公告)号：EP2439172B1

公开(公告)日：2018-05-02

申请号：EP10186715.8

申请日：2010-10-06

Applicant: Sercel

Inventor： Moreau, Maurice

IPC: B81C1/00

CPC classification number: G01P21/00 ,  B81B3/0018 ,  B81B2201/0235 ,  B81C1/00968 ,  G01P15/125

Abstract: An anti-stiction method is proposed in an inertial micro-electro-mechanical device comprising: - a mobile mass (150), suspended to an armature via spring means (115), comprising at least one mobile electrode; and - at least one fixed electrode rigidly attached to the armature, each fixed electrode cooperating with one of said at least one mobile electrode to form a pair of electrodes. The anti-stiction method is such that it carries out a step of detecting, for at least one stuck pair of electrodes, a stiction associated to a stiction force and at least one separating step, comprising a step of applying, during a predetermined time period, a predetermined voltage between the electrodes of at least one of said pair or pairs of electrodes, to create an electrostatic force.

公开(公告)号：EP3248936A4

公开(公告)日：2018-04-25

申请号：EP15894015

申请日：2015-12-14

Applicant: GOERTEK INC

Inventor： ZHENG GUOGUANG

IPC: B81B7/02 ,  G01L9/12

CPC classification number: B81B7/02 ,  B81B3/0021 ,  B81B7/0061 ,  B81B2201/0228 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/04 ,  B81C1/00166 ,  B81C1/00269 ,  G01L9/12 ,  G01L19/04 ,  G01P15/125

Abstract: The present invention discloses a integrated structure of an MEMS pressure sensor and an MEMS inertia sensor, comprising: an insulating layer formed on a substrate, a first lower electrode and a second lower electrode both formed on the insulating layer, further comprising a first upper electrode forming an air pressure-sensitive capacitor together with the first lower electrode, and a second upper electrode forming a reference capacitor together with the second lower electrode; further comprising an inertia-sensitive structure supported above the substrate by a third support part, and a fixed electrode plate forming an inertia detecting capacitor of an inertia sensor together with the inertia-sensitive structure; and a cover body which packages the inertia detecting capacitor composed of the inertia-sensitive structure and the fixed electrode plate on the substrate. The integrated structure according to the present invention integrates the MEMS inertia sensor and the MEMS pressure sensor on the same substrate, which may effectively reduce the area of the chip, so as to reduce the cost of the chip. Single packaging may complete the packaging of the entire chip and reduce the cost of the chip packaging.

公开(公告)号：EP2879988B1

公开(公告)日：2018-04-04

申请号：EP13829083.8

申请日：2013-07-31

Applicant: Robert Bosch GmbH ,  Chen, Po-Jui ,  Yama, Gary ,  Liger, Matthieu ,  Graham, Andrew

Inventor： CHEN, Po-Jui ,  YAMA, Gary ,  LIGER, Matthieu ,  GRAHAM, Andrew

IPC: B81B7/02 ,  B81C1/00 ,  G01P15/08 ,  G01P15/18 ,  G01C19/5783

CPC classification number: H01L29/84 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/015 ,  B81C1/0023 ,  B81C2201/0197 ,  B81C2203/0136 ,  B81C2203/0771 ,  G01C19/5783 ,  G01P15/0802 ,  G01P15/18 ,  H01L29/66007

Abstract: A device with multiple encapsulated functional layers, includes a substrate, a first functional layer positioned above a top surface of the substrate, the functional layer including a first device portion, a first encapsulating layer encapsulating the first functional layer, a second functional layer positioned above the first encapsulating layer, the second functional layer including a second device portion, and a second encapsulating layer encapsulating the second functional layer.

公开(公告)号：EP1599736B1

公开(公告)日：2018-04-04

申请号：EP04710048.2

申请日：2004-02-11

Applicant: Murata Electronics Oy

Inventor： KUISMA, Heikki ,  LAHDENPERÄ, Juha ,  MUTIKAINEN, Risto

IPC: G01P15/08 ,  G01P15/125 ,  B81B7/00

CPC classification number: G01P15/125 ,  B81B3/0013 ,  B81B2201/0235 ,  B81C1/0096 ,  B81C2201/112 ,  G01P15/08 ,  G01P15/0802

Abstract: The invention relates to measuring devices used for the measuring of acceleration, and specifically to capacitive acceleration sensors. The capacitive acceleration sensor according to the present invention comprises a pair of electrodes composed of a movable electrode ( 4 ) and a stationary electrode ( 5 ), and, related to the pair of electrodes, an isolator protrusion having a special coating. The invention provides an improved, more durable sensor structure, which withstands wear caused by overload situations better than earlier structures.