摘要:
A semiconductor acceleration sensor (1) is formed by a cantilever (4) having a conductive movable electrode (5) of predetermined mass at one end, at least one pair of fixed conductive electrodes (8, 9) which are stationary with respect to the movable electrode (5) located on opposing sides of the movable electrode, and gaps provided between the movable electrode and the fixed electrodes. To prevent the movable electrode becoming fused to the contacted fixed electrode, in a first aspect of this invention, an insulating layer (6) is provided between the movable electrode and fixed electrodes, the layer being either on the movable electrode or on the fixed electrodes and in a second aspect of this invention the movable electrode or, preferably, the fixed electrodes, are formed of a high melting point material. In such a second aspect, to improve adhesion between the high melting point material and a substrate (3a, 3b) to which the fixed electrodes (8′, 9′) are mounted, a lower melting point material is firstly coated on said substrates. In a feature of the invention, a detector unit processing circuit (Figure 20) is described in which the output characteristic of the circuit may be digitally adjusted by suitable switching of a plurality of resistors (Rs, Rf), and in a second feature, the sensor chip and the detector unit integrated circuit are located on a common base (303) and mounted in a hermetically sealed chamber to prevent adverse environmental effects affecting operation of the sensor and detector unit assembly. A gas having a dew point of -40°C or lower is, advantageously, charged into the hermetically sealed chamber.
摘要:
A semiconductor acceleration sensor (1) is formed by a cantilever (4) having a conductive movable electrode (5) of predetermined mass at one end, at least one pair of fixed conductive electrodes (8, 9) which are stationary with respect to the movable electrode (5) located on opposing sides of the movable electrode, and gaps provided between the movable electrode and the fixed electrodes. To prevent the movable electrode becoming fused to the contacted fixed electrode, in a first aspect of this invention, an insulating layer (6) is provided between the movable electrode and fixed electrodes, the layer being either on the movable electrode or on the fixed electrodes and in a second aspect of this invention the movable electrode or, preferably, the fixed electrodes, are formed of a high melting point material. In such a second aspect, to improve adhesion between the high melting point material and a substrate (3a, 3b) to which the fixed electrodes (8′, 9′) are mounted, a lower melting point material is firstly coated on said substrates. In a feature of the invention, a detector unit processing circuit (Figure 20) is described in which the output characteristic of the circuit may be digitally adjusted by suitable switching of a plurality of resistors (Rs, Rf), and in a second feature, the sensor chip and the detector unit integrated circuit are located on a common base (303) and mounted in a hermetically sealed chamber to prevent adverse environmental effects affecting operation of the sensor and detector unit assembly. A gas having a dew point of -40°C or lower is, advantageously, charged into the hermetically sealed chamber.
摘要:
The present invention relates to a thermal type flow sensor (1A) comprising: a base portion (4) provided along the flowing direction of a fluid passing through a main passage (10); and a sensor element (2) mounted on the base portion (4) and equipped with an exothermic resistor (3) formed on a substrate for detecting the flow rate of fluid passing through main passage (10). This flow sensor (1A) is featured in that a rectangular recessed portion (5) is formed in the base portion (4), that the sensor element (2) is fixedly fitted in the recessed portion (5) in a manner that the surface of detecting portion of sensor element (2) is positioned lower than an upper edge of recessed portion (5), that a wall portion of measuring passage which is located to face the sensor element (2) is constricted, and that the exothermic resistor (3) is disposed along a passage of fluid and spaced away from the upstream side upper edge of recessed portion (5) and cannot be substantially affected by a disturbance of flow of fluid that may be caused to generate due to a step portion formed between the upper edge (5a) of recessed portion (5) and the surface of detecting portion of sensor element (2).
摘要:
A Δ Σ type AD converter includes a local D/A converter having a SC integrator which is constructed by an analog switch operated at the first and second timings of an input (1), an analog switch operated at the first and second timings of an input (2), an analog switch operated at the first and second timings without selection of the input, a capacitor charged and discharged by these analog switches and an operational amplifier (21), a comparator (22), a D-type flip-flop (28), a switch (29) and reference voltage sources (30, 31).
摘要:
A collective wiring system for an automobile provides a central control unit (CCU) which communicates with a plurality of terminal control units (LCU) each connected to one or more input or output devices (93, 94, 95, 96), such as switches, sensors, motors and the like. The control over output devices in response to the status of input devices is performed by the central control unit (CCU) on the basis of tables of data stored in memory (102, 103). A scan table (SCNTBL) controls the order in which data communications are made to the terminal control units (LCU) to obtain their status and provide them with control commands. A monitor table (STATTBL) stores the current status of the terminal control units (LCU) and a control table (CNTLTB) stores the control data for the terminal control units (LCU). A connection table (CCTBL) stores the relationship between the terminal control unit (LCU) for an input device and the terminal control unit (LCU) for the output device to be controlled thereby. Thus, connection control between input and output devices is effected by software.
摘要:
The invention relates to a capacitance type accelerometer and a method of manufacturing the same. The capacitance type accelerometer has a first silicon plate (2,7) formed as having a movable electrode part (7) which is moved according to acceleration, two second silicon plates (1, 3) which are disposed on both sides of the first silicon plate with a certain separation distance, and thermal oxide films (4, 5) which are respectively disposed between the first silicon plate except the movable electrode part (7) and the two second silicon plates (1, 3) and stick the first silicon plate (2) except the movable electrode and the two second silicon plates together. The process of manufacturing the capacitance type accelerometer is made by processing and cutting a wafer by dicing saw without coming into the accelerometer of cutting chips or cutting water.