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27 条记录 (耗时 0.017 秒)

    Semiconductor acceleration sensor and vehicle control system using the same
    24.
    发明公开
    Semiconductor acceleration sensor and vehicle control system using the same 失效
    半导体加速度传感器和使用其的车辆控制系统

    公开(公告)号：EP0459723A3

    公开(公告)日：1992-03-11

    申请号：EP91304732.0

    申请日：1991-05-24

    申请人： HITACHI, LTD. ,  HITACHI AUTOMOTIVE ENGINEERING CO., LTD.

    发明人： Tsuchitani, Shigeki ,  Suzuki, Seiko ,  Miki, Masayuki ,  Tanaka, Tomoyuki ,  Matsumoto, Masahiro ,  Ichikawa, Norio ,  Ebine, Hiromichi ,  Sugisawa, Yukiko ,  Sato, Kanemasa ,  Ueno, Sadayasu ,  Asano, Yasuhiro ,  Kubota, Masanori ,  Suzuki, Masayoshi

    IPC分类号： G01P15/125 ,  G01P1/00 ,  G01P15/13

    CPC分类号： G01P15/125 ,  G01P1/003 ,  G01P15/131 ,  G01P2015/0828

    摘要： A semiconductor acceleration sensor (1) is formed by a cantilever (4) having a conductive movable electrode (5) of predetermined mass at one end, at least one pair of fixed conductive electrodes (8, 9) which are stationary with respect to the movable electrode (5) located on opposing sides of the movable electrode, and gaps provided between the movable electrode and the fixed electrodes. To prevent the movable electrode becoming fused to the contacted fixed electrode, in a first aspect of this invention, an insulating layer (6) is provided between the movable electrode and fixed electrodes, the layer being either on the movable electrode or on the fixed electrodes and in a second aspect of this invention the movable electrode or, preferably, the fixed electrodes, are formed of a high melting point material. In such a second aspect, to improve adhesion between the high melting point material and a substrate (3a, 3b) to which the fixed electrodes (8′, 9′) are mounted, a lower melting point material is firstly coated on said substrates. In a feature of the invention, a detector unit processing circuit (Figure 20) is described in which the output characteristic of the circuit may be digitally adjusted by suitable switching of a plurality of resistors (Rs, Rf), and in a second feature, the sensor chip and the detector unit integrated circuit are located on a common base (303) and mounted in a hermetically sealed chamber to prevent adverse environmental effects affecting operation of the sensor and detector unit assembly. A gas having a dew point of -40°C or lower is, advantageously, charged into the hermetically sealed chamber.

    Oxygen sensor element and process for producing the same
    25.
    发明公开
    Oxygen sensor element and process for producing the same 失效
    Sauerstoffühlerelementund Verfahren zum Herstellen desselben。

    公开(公告)号：EP0203351A1

    公开(公告)日：1986-12-03

    申请号：EP86105424.5

    申请日：1986-04-18

    申请人： HITACHI, LTD.

    发明人： Iwamura, Ryoji ,  Murooka, Hideyasu ,  Fujita, Tsuyoshi ,  Ueno, Sadayasu ,  Iwanaga, Shoichi ,  Suzuki, Seiko

    IPC分类号： G01N27/417

    CPC分类号： G01N27/4071

    摘要： A solid electrolyte type oxygen sensor element having a built-in heater characterized by having an insulating layer including a heater therein on an electrode formed side of solid electrolyte plate is improved in adhesiveness when an oxide binder of Al 2 O 3 - SiO 2 - MgO system, or Al 2 O 3 - SiO 2 system is added to the insulating layer, the solid electrolyte plates or an insulating thin layer formed at an interface of the insulating layer and the solid electrolyte plate. When an intermediate layer is interposed between the insulating layer and the solid electrolyte plate, cracks caused by thermal stress can be prevented effectively.

    摘要翻译： 具有内置加热器的固体电解质型氧传感器元件，其特征在于在固体电解质板的电极形成侧具有包括加热器的绝缘层，当Al 2 O 3 -SiO 2 -MgO体系的氧化物粘合剂或Al 2 O 3 在绝缘层，固体电解质板或形成在绝缘层和固体电解质板的界面处的绝缘薄层之间加入SiO 2系。 当在绝缘层和固体电解质板之间插入中间层时，可以有效地防止由热应力引起的裂纹。

    Semiconductor absolute pressure transducer assembly
    27.
    发明公开
    Semiconductor absolute pressure transducer assembly 失效
    半导体绝对压力传感器组件。

    公开(公告)号：EP0010204A1

    公开(公告)日：1980-04-30

    申请号：EP79103666.8

    申请日：1979-09-27

    申请人： Hitachi, Ltd.

    发明人： Yamada, Kazuji ,  Suzuki, Seiko ,  Nishihara, Motohisa ,  Kawakami, Kanji ,  Sato, Hideo ,  Kobori, Shigeyuki ,  Kanzawa, Ryosaku ,  Takahashi, Minoru ,  Minorikawa, Hitoshi

    IPC分类号： G01L9/06 ,  H01L29/84

    CPC分类号： G01L9/0042 ,  G01L9/0054

    摘要： A semiconductor pressure transducer assembly comprising a silicon diaphragm assembly (20) and a glass covering member (10). The assembly (20) has a circular diaphragm portion (30) of thin silicon which is formed using etching, and a thick supporting portion (33) therearound. Piezoresistive elements (22, 24) of a piezoresistive bridge circuit and conducting paths (27) for electrically connection thereof are formed on the assembly (20). On a surface of the assembly (20), a passivating layer (31) of silicon dioxide is formed in uniform thickness, and further on a surface of the passivating layer (31) is formed a layer (34) of polysilicon on the supporting portion (33) of the assembly (20) using Ion Implantation method, or reforming a silicon dioxide layer (31) thereon. In the passivating layer (31), a contacting window (32) is formed, through which the polysilicon layer (34) is electrically connected to the silicon diaphragm assembly (20). The covering member (10) of borosilicate glass having a circular well (11) is mounted and Anodic-bonded onto the silicon diaphragm assembly (20) in contact with the'polysilicon layer (34).