公开(公告)号：EP0078058A2

公开(公告)日：1983-05-04

申请号：EP82109934.8

申请日：1982-10-27

申请人： Hitachi, Ltd.

发明人： Tanei, Hirayoshi ,  Iwanaga, Shoichi ,  Ikegami, Akira ,  Otsu, Hiroshi ,  Isomae, Hiromi

IPC分类号： G01N27/04

CPC分类号： G01N27/121

摘要： A dew sensor of direct current type and resistance- lowering type with increasing humidity for quick and sharp detection of dewing is provided, which comprises a pair of counterposed electrodes, humidity-sensitive layer of insulating porous metal oxide with a porosity of 20 to 60% provided on and between the counterposed electrodes, and an organic polymer coating layer having a thickness of 0.05 to 2 µm provided on the humidity-sensitive layer.

公开(公告)号：EP0911855A3

公开(公告)日：1999-07-21

申请号：EP98114721.8

申请日：1998-08-05

申请人： Hitachi, Ltd.

发明人： Kawai, Michifumi ,  Satoh, Ryohei ,  Iwanaga, Shoichi ,  Suzuki, Shigeaki ,  Suzuki, Kazuo ,  Motowaki, Shigehisa ,  Kato, Yoshihiro ,  Naito, Yutaka

IPC分类号： H01J17/16 ,  H01J17/49 ,  H01J9/26

CPC分类号： H01J11/12 ,  H01J9/261 ,  H01J11/38 ,  H01J11/48

摘要： A gas-discharge display panel is manufactured by sealing up a front substrate (1) and a rear substrate (2) by a sealing member. A relationship of Tg ≧ Tf exists between a glass transition point Tg of a dielectric substance (7) formed on the front substrate and a temperature Tf at which the front substrate and the rear substrate are sealed up.

摘要翻译： 气体放电显示面板通过用密封件密封前基板（1）和后基板（2）而制造。 Tg≥Tf的关系存在于形成在前基板上的电介质（7）的玻璃化转变点Tg与前基板和后基板被密封的温度Tf之间。

公开(公告)号：EP0697725A2

公开(公告)日：1996-02-21

申请号：EP95111855.3

申请日：1995-07-27

申请人： HITACHI, LTD.

发明人： Tanei, Hirayoshi ,  Iwanaga, Shoichi ,  Okamoto, Masahide ,  Nakamura, Masato ,  Morita, Kousaku ,  Ishihara, Shousaku ,  Kobayashi, Fumiyuki ,  Tagami, Fumikazu ,  Sengoku, Norio ,  Fujita, Tsuyoshi

IPC分类号： H01L23/15

CPC分类号： C03C14/004 ,  C03C3/089 ,  C03C8/16 ,  C03C17/06 ,  C03C2217/253 ,  H01L21/4807 ,  H01L23/15 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/15312 ,  H01L2924/15787 ,  H05K1/0306 ,  H05K3/4629 ,  Y10S428/901

摘要： The present invention provides ceramic circuit substrate which is sintered at 900 to 1,050°C and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing the same.
A glass is employed as row material, of which softening point is 850 to 1,100°C, that is, a glass having a composition included in an area in Fig. 1 (triangular composition diagram of SiO₂-B₂O₃-R₂O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively.

摘要翻译： 本发明提供陶瓷电路基板，该陶瓷电路基板在900〜1050℃下烧结，相对介电常数低，与硅相当的热膨胀系数和高的弯曲强度，及其制造方法。 使用玻璃作为行材料，其软化点为850〜1100℃，即具有图1中的区域的组成的玻璃。 图1（SiO 2 -B 2 O 3 -R 2 O的三角形组成图，组成由小圆的位置表示，小圆圈中的数字表示组成数），用连接表示第一，第三，第十，第十一， 和第四组合物。 $$

公开(公告)号：EP0089470A1

公开(公告)日：1983-09-28

申请号：EP83100833.9

申请日：1983-01-28

申请人： Hitachi, Ltd.

发明人： Kaneyasu, Masayoshi ,  Noro, Takanobu ,  Arima, Hideo ,  Ito, Mitsuko ,  Iwanaga, Shoichi ,  Sato, Nobuo ,  Ikegami, Akira ,  Isogai, Tokio

IPC分类号： G01N33/00 ,  G01N27/12

CPC分类号： G01N27/122 ,  G01N33/0031

摘要： A gas detecting apparatus is disclosed in which detection outputs from a plurality of semiconductor gas detecting elements (2011, 2012, 2013) different in gas detection characteristic from each other and previously-obtained char acteristic values of the semiconductor gas detecting elements for a mixed gas are subjected to operational processing to detect one or more specified constituent gases contained in the mixed gas, and in which when the specified constituent gas is detected, the detection information Is announced by some means (2081,2082), and also the supply of gas is stopped (207) or a supply gas is diluted.

公开(公告)号：EP1083600B1

公开(公告)日：2007-02-14

申请号：EP00124369.0

申请日：1995-07-27

申请人： Hitachi, Ltd.

发明人： Tanei, Hirayoshi ,  Iwanaga, Shoichi ,  Okamoto, Masahide ,  Nakamura, Masato ,  Morita, Kousaku ,  Ishihara, Shousaku ,  Kobayashi, Fumiyuki ,  Tagami, Fumikazu ,  Sengoku, Norio ,  Fujita, Tsuyoshi

IPC分类号： H01L23/15

CPC分类号： C03C14/004 ,  C03C3/089 ,  C03C8/16 ,  C03C17/06 ,  C03C2217/253 ,  H01L21/4807 ,  H01L23/15 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/15312 ,  H01L2924/15787 ,  H05K1/0306 ,  H05K3/4629 ,  Y10S428/901

公开(公告)号：EP1083600A3

公开(公告)日：2005-05-25

申请号：EP00124369.0

申请日：1995-07-27

申请人： Hitachi, Ltd.

发明人： Tanei, Hirayoshi ,  Iwanaga, Shoichi ,  Okamoto, Masahide ,  Nakamura, Masato ,  Morita, Kousaku ,  Ishihara, Shousaku ,  Kobayashi, Fumiyuki ,  Tagami, Fumikazu ,  Sengoku, Norio ,  Fujita, Tsuyoshi

IPC分类号： H01L23/15

CPC分类号： C03C14/004 ,  C03C3/089 ,  C03C8/16 ,  C03C17/06 ,  C03C2217/253 ,  H01L21/4807 ,  H01L23/15 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/15312 ,  H01L2924/15787 ,  H05K1/0306 ,  H05K3/4629 ,  Y10S428/901

摘要： The present invention provides ceramic circuit substrate which is sintered at 900 to 1,050°C and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing the same. A glass is employed as row material, of which softening point is 850 to 1,100°C, that is, a glass having a composition included in an area in Fig. 1 (triangular composition diagram of SiO 2 -B 2 O 3 -R 2 O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively.

公开(公告)号：EP0911855A2

公开(公告)日：1999-04-28

申请号：EP98114721.8

申请日：1998-08-05

申请人： Hitachi, Ltd.

发明人： Kawai, Michifumi ,  Satoh, Ryohei ,  Iwanaga, Shoichi ,  Suzuki, Shigeaki ,  Suzuki, Kazuo ,  Motowaki, Shigehisa ,  Kato, Yoshihiro ,  Naito, Yutaka

IPC分类号： H01J17/16 ,  H01J17/49 ,  H01J9/26

CPC分类号： H01J11/12 ,  H01J9/261 ,  H01J11/38 ,  H01J11/48

摘要： A gas-discharge display panel is manufactured by sealing up a front substrate (1) and a rear substrate (2) by a sealing member. A relationship of Tg ≧ Tf exists between a glass transition point Tg of a dielectric substance (7) formed on the front substrate and a temperature Tf at which the front substrate and the rear substrate are sealed up.

摘要翻译： 通过密封构件密封前基板（1）和后基板（2）来制造气体放电显示面板。 在前基板上形成的电介质（7）的玻璃化转变点Tg与前基板和后基板密封的温度Tf之间存在Tg> / = Tf的关系。

公开(公告)号：EP0203351B1

公开(公告)日：1990-08-22

申请号：EP86105424.5

申请日：1986-04-18

申请人： HITACHI, LTD.

发明人： Iwamura, Ryoji ,  Murooka, Hideyasu ,  Fujita, Tsuyoshi ,  Ueno, Sadayasu ,  Iwanaga, Shoichi ,  Suzuki, Seiko

IPC分类号： G01N27/417

CPC分类号： G01N27/4071

公开(公告)号：EP1083600A2

公开(公告)日：2001-03-14

申请号：EP00124369.0

申请日：1995-07-27

申请人： Hitachi, Ltd.

发明人： Tanei, Hirayoshi ,  Iwanaga, Shoichi ,  Okamoto, Masahide ,  Nakamura, Masato ,  Morita, Kousaku ,  Ishihara, Shousaku ,  Kobayashi, Fumiyuki ,  Tagami, Fumikazu ,  Sengoku, Norio ,  Fujita, Tsuyoshi

IPC分类号： H01L23/15

CPC分类号： C03C14/004 ,  C03C3/089 ,  C03C8/16 ,  C03C17/06 ,  C03C2217/253 ,  H01L21/4807 ,  H01L23/15 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/15312 ,  H01L2924/15787 ,  H05K1/0306 ,  H05K3/4629 ,  Y10S428/901

摘要： The present invention provides ceramic circuit substrate which is sintered at 900 to 1,050°C and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing the same.
A glass is employed as row material, of which softening point is 850 to 1,100°C, that is, a glass having a composition included in an area in Fig. 1 (triangular composition diagram of SiO 2 -B 2 O 3 -R 2 O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively.

摘要翻译： 本发明提供陶瓷电路基板，该陶瓷电路基板在900〜1050℃下烧结，相对介电常数低，与硅相当的热膨胀系数和高的弯曲强度，及其制造方法。 使用玻璃作为行材料，其软化点为850〜1100℃，即具有图1中的区域中的组成的玻璃。 图1（SiO 2 -B 2 O 3 -R 2 O的三角形组成图，组成由小圆的位置表示，小圆数表示组成数），用连接表示第一，第三，第十，第十一， 和第四组合物。

公开(公告)号：EP0203351A1

公开(公告)日：1986-12-03

申请号：EP86105424.5

申请日：1986-04-18

申请人： HITACHI, LTD.

发明人： Iwamura, Ryoji ,  Murooka, Hideyasu ,  Fujita, Tsuyoshi ,  Ueno, Sadayasu ,  Iwanaga, Shoichi ,  Suzuki, Seiko

IPC分类号： G01N27/417

CPC分类号： G01N27/4071

摘要： A solid electrolyte type oxygen sensor element having a built-in heater characterized by having an insulating layer including a heater therein on an electrode formed side of solid electrolyte plate is improved in adhesiveness when an oxide binder of Al 2 O 3 - SiO 2 - MgO system, or Al 2 O 3 - SiO 2 system is added to the insulating layer, the solid electrolyte plates or an insulating thin layer formed at an interface of the insulating layer and the solid electrolyte plate. When an intermediate layer is interposed between the insulating layer and the solid electrolyte plate, cracks caused by thermal stress can be prevented effectively.

摘要翻译： 具有内置加热器的固体电解质型氧传感器元件，其特征在于在固体电解质板的电极形成侧具有包括加热器的绝缘层，当Al 2 O 3 -SiO 2 -MgO体系的氧化物粘合剂或Al 2 O 3 在绝缘层，固体电解质板或形成在绝缘层和固体电解质板的界面处的绝缘薄层之间加入SiO 2系。 当在绝缘层和固体电解质板之间插入中间层时，可以有效地防止由热应力引起的裂纹。