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公开(公告)号：EP0061189B1
公开(公告)日：1985-07-31
申请号：EP82102358.7
申请日：1982-03-22
发明人： Kojima, Takafumi , Yoshida, Shigeru Higashi-Shataku 27-202 , Mizoguchi, Masayuki Tomomihara-Dokushinryo 2-202
IPC分类号： H04M3/30
CPC分类号： H04M3/30
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公开(公告)号：EP0045813B1
公开(公告)日：1985-07-03
申请号：EP81900494.6
申请日：1981-02-17
发明人： UMEMURA, Kazuhiro , SAMPEI, Tohru , NAKATA, Kazuo , SATO, Hirokazu , MURAKAMI, Kenya , INTOH, Kiyoshi
IPC分类号： G10L9/08
CPC分类号： G10L19/04 , G10L13/047 , G10L19/24
摘要： A speech synthesis unit, in which a natural speech is cut and taken out separately in predetermined time intervals, the acoustic characteristics and parameters in the predetermined time interval are abstracted and then speech is synthesized based on these characteristics and parameters. The speech synthesis unit alone can process different quantities of the acoustic parameter information. For this purpose, the time interval of one analysis frame is changed so as to change the information quantity per unit of time, without any variation of the number of bits of the characteristics and parameters distributed in one analysis frame, and the time interval of one synthesis frame in the synthesizing unit is correspondingly changed so as to match the time interval of one analysis frame with the time interval of one synthesis frame.
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公开(公告)号：EP0066883A3
公开(公告)日：1985-05-15
申请号：EP82105024
申请日：1982-06-08
发明人： Matsuda, Tadahito , Okubo, Tsuneo , Ozasa, Susumu , Saitou, Norio , Yoda, Haruo
IPC分类号： H01L21/00
CPC分类号： H01L23/544 , H01J37/3045 , H01L21/0277 , H01L21/30 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： An exposure method with an electron beam exposure apparatus in which an electron beam is emitted onto a substrate (1) such as a silicon wafer on which an electron-beam sensitive resist is coated, thereby directly forming or writing patterns. A substrate (1) having thereon a number of chips (2) are divided into blocks (3), marks (4) are provided on each of the blocks (3), the positions of the marks (4) are detected and the writing exposure positions of the chips (2) within each block (3) are modified on the basis of the detection results. According to this invention, efficient writing exposure can be made with high accuracy.
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公开(公告)号：EP0128538A3
公开(公告)日：1985-04-24
申请号：EP84106519
申请日：1984-06-07
发明人： Kawasaki, Akihisa c/o Osaka Works of Sumitomo , Tada, Kohji c/o Osaka Works of Sumitomo , Kotani, Toshihiro c/o Osaka Works of Sumitomo , Miyazawa, Shintaro
CPC分类号： C30B15/14
摘要： A process for preparing a single crystal comprising drawing up a single crystal by the Czochralski process and cooling it at a temperature not lower than 600°C at a reduced pressure or in vacuo, by which a single crystal having a dislocation density of 1.5 x 10 4 cm 2 or less is prepared.
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公开(公告)号：EP0096833A3
公开(公告)日：1985-03-27
申请号：EP83105596
申请日：1983-06-07
IPC分类号： B65H51/20
CPC分类号： B65H51/20 , C03B37/032 , C03B37/035
摘要： A device for accumulating a thin fiber, such as an optical fiber. Line accumulating members are provided around which a fiber is drawn and wound. The fiber is diverted from its path by a plurality of guide wheels, one or more of which are attached to a shaft which causes the guide wheels to rotate about the line accumulating members. At the same time, the guide wheels which wind the fiber are caused to move laterally relative to the line accumulating members to evenly distribute the fiber around the line accumulating members. This is accomplished by mechanically coupling the assembly for laterally moving the guide wheels to the assembly which rotates them about the line accumulating members. The device is designed to accomplish this while the line accumulating members are fixed to the body of the device. This results in a line accumulating device which is compact and simple.
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公开(公告)号：EP0091651A3
公开(公告)日：1984-10-17
申请号：EP83103348
申请日：1983-04-06
CPC分类号： G03F7/265 , G03F7/0757 , G03F7/36 , G03F7/38 , Y10S438/95
摘要： A method for forming a micropattern, comprises the steps of forming an organic polymeric material layer (2) on a substrate (1), forming a silicone layer (3) on the organic polymeric material layer (2), selectively irradiating a surface of the silicone layer (3) with a high-energy beam (4), exposing the surface of the silicone layer to a radical addition polymerizable monomer gas (5) so as to form a graft polymer film (6) on an irradiated portion of the surface of the silicone layer (3), performing reactive ion etching using the graft polymer film (6) as a mask so as to form a silicone pattern, and performing reactive ion etching using the silicone pattern as a mask so as to form an organic polymeric material pattern. The method allows formation of a resist pattern with a high precision and a high aspect ratio.
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公开(公告)号：EP0101048A3
公开(公告)日：1984-08-22
申请号：EP83107829
申请日：1983-08-09
发明人： Kaino, Toshikuni , Jinguji, Kaname , Nara, Shigeo , Ishiwari, Kazuo , Ohmori, Akira , Yuhara, Sumiko , Tomihashi, Nobuyuki
CPC分类号： D01F8/10 , B29C47/00 , B29C47/0014 , B29D11/00663
摘要： Plastic optical fibers comprising as a core component a polymer predominantly containing methyl methacrylate and as a cladding component a copolymer lower in the refractive index than the core component, the plastics optical fibers being characterized by performing conjugate spinning with use of the cladding component which is vinylidene fluoride-tetrafluoroethylene copolymer having incorporated therein 5 to 50% by weight of a polymer predominantly containing methyl methacrylate.
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公开(公告)号：EP0025217B1
公开(公告)日：1984-03-28
申请号：EP80105254.9
申请日：1980-09-03
发明人： Hata, Masahura , Kato, Kotaro
CPC分类号： H04L7/033
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公开(公告)号：EP0020776B1
公开(公告)日：1983-04-20
申请号：EP79901465.9
申请日：1979-11-01
CPC分类号： G03C1/705 , G03C5/56 , G03F1/00 , G03F7/0044 , H01L21/31116 , H01L21/314
摘要： Method of forming patterns utilizing a photosensitive chalcogenide thin film comprising a lamination layer of amorphous chalcogenide thin film (2) and silver thin film (3). The amorphous chalcogenide thin film (22) of regions which are not exposed to light (6) or an accelerated particle beam and consequently are not doped with silver are removed by means of plasma etching with fluorine gas. According to this process, desired patterns of the amorphous chalcogenide thin film (21) doped with silver are left on a substrate. The remaining patterns are used as an etching mask to form the desired patterns on a substrate layer by a plasma etching method by removing a substrate layer (1C).
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公开(公告)号：EP0039899A3
公开(公告)日：1983-01-05
申请号：EP81103441
申请日：1981-05-06
摘要： An analog scan signal having a repetitive background waveform is converted into a multi-level signal through a peak hold circuit (2), a converter (14,83,93), a digital memory (4,4') and a discriminator (6). The peak hold circuit detects and holds the peak voltage of the current scan lines. The background waveform is normalized by the peak voltage and converted into a digital signal in the converter and stored in the memory. The analog scan signal is discriminated in the discriminator on the basis of a reference voltage produced with the normalized background waveform read out of the memory and converted in the converter and with the current peak voltage supplied from the peak hold circuit.
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