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21.发明公开
公开(公告)号：EP2867387A4
公开(公告)日：2016-03-09
申请号：EP13810525
申请日：2013-06-17
Applicant: SEMICONDUCTOR ENERGY LAB
Inventor： YAMAZAKI SHUNPEI
IPC: C23C14/34 , C23C14/08 , C23C14/35 , H01L21/363 , H01L21/8247 , H01L27/115 , H01L51/50 , H05B33/14
CPC classification number: C23C14/3464 , C23C14/08 , C23C14/086 , C23C14/34 , C23C14/3414 , C23C14/352 , C23C14/564 , H01L29/513 , H01L29/517 , H01L29/7869
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公开(公告)号：EP2952343A4
公开(公告)日：2016-02-10
申请号：EP14745770
申请日：2014-01-30
Applicant: NITTO DENKO CORP
Inventor： WATANABE MASAHIKO , OHMORI YUTAKA
CPC classification number: G02B5/0875 , C23C14/08 , C23C14/086 , C23C14/14 , G02B1/04 , G02B1/14 , G02B5/208 , G02B5/26 , G02B5/282
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23.发明公开METHOD FOR PRODUCING INFRARED RADIATION REFLECTING FILM 审中-公开VERFAHREN ZUR HERSTELLUNG EINER INFRAROTSTRAHLUNG REFLEKTIERENDEN FOLIE
公开(公告)号：EP2952939A1
公开(公告)日：2015-12-09
申请号：EP14745570.3
申请日：2014-01-30
Applicant: Nitto Denko Corporation
Inventor： WATANABE, Masahiko , OHMORI, Yutaka
CPC classification number: C23C14/3464 , B32B17/064 , B32B2307/416 , C23C14/086 , C23C14/205 , C23C14/3414 , G02B5/282 , G02B5/285
Abstract: The method for manufacturing an infrared reflecting film comprises, in order: a metal layer forming step of depositing a metal layer (25) on a transparent film substrate (10); a metal oxide layer forming step of depositing a surface-side metal oxide layer (22) by DC sputtering on the metal layer (25) so as to be in direct contact with the metal layer (25); and a transparent protective layer forming step of depositing a transparent protective layer (30) on the surface-side metal oxide layer (22). In the metal oxide layer forming step, a sputtering target used for DC sputtering contains zinc atoms and tin atoms, and is preferably formed by sintering a metal powder and at least one metal oxide among zinc oxide and tin oxide. In the surface-side metal oxide layer forming step, an inert gas and an oxygen gas are introduced into a sputtering chamber. The oxygen concentration in the gas introduced to the sputtering chamber is preferably not more than 8 vol%.
Abstract translation: 制造红外线反射膜的方法依次包括：在透明膜基板（10）上沉积金属层（25）的金属层形成步骤。 金属氧化物层形成步骤，通过DC溅射在所述金属层（25）上沉积表面侧金属氧化物层（22）以与所述金属层（25）直接接触; 以及在表面侧金属氧化物层（22）上形成透明保护层（30）的透明保护层形成工序。 在金属氧化物层形成工序中，用于DC溅射的溅射靶含有锌原子和锡原子，优选通过在氧化锌和氧化锡中烧结金属粉末和至少一种金属氧化物而形成。 在表面侧金属氧化物层形成工序中，将惰性气体和氧气引入溅射室。 导入溅射室的气体中的氧浓度优选为8体积％以下。
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24.发明公开PRODUCTION METHOD FOR INFRARED RADIATION REFLECTING FILM 审中-公开HERSTELLUNGSVERFAHRENFÜRINFRAROTSTRAHLUNGSREFLEKTIERENDE FOLIE
公开(公告)号：EP2952610A1
公开(公告)日：2015-12-09
申请号：EP14746647.8
申请日：2014-01-30
Applicant: Nitto Denko Corporation
Inventor： WATANABE, Masahiko , OHMORI, Yutaka
CPC classification number: H01J37/3429 , B29L2011/0083 , B32B38/0008 , B32B2037/243 , B32B2038/0092 , B32B2309/02 , B32B2309/04 , B32B2309/105 , B32B2309/62 , B32B2309/66 , B32B2310/0831 , C23C14/086 , C23C14/205 , C23C14/34 , C23C14/3414 , G02B5/208 , G02B5/26 , H01J2237/332
Abstract: An infrared reflecting film (100) includes an infrared reflecting layer (20) having a metal layer (25) and a metal oxide layer (21, 22) and a transparent protective layer (30) in this order on a transparent film substrate (10). In the manufacturing method, the metal oxide layer is deposited by a DC sputtering method using a roll-to-roll sputtering apparatus. A sputtering target used in the DC sputtering method contains zinc atoms and tin atoms. The sputtering target is preferably obtained by sintering a metal powder and at least one metal oxide among zinc oxide and tin oxide.
Abstract translation: 红外线反射膜（100）在透明膜基板（10）上依次包括具有金属层（25）和金属氧化物层（21,22）和透明保护层（30）的红外线反射层（20） ）。 在制造方法中，通过使用卷对卷溅射装置的DC溅射法来沉积金属氧化物层。 在DC溅射法中使用的溅射靶含有锌原子和锡原子。 溅射靶优选通过在氧化锌和氧化锡中烧结金属粉末和至少一种金属氧化物而获得。
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公开(公告)号：EP2944460A1
公开(公告)日：2015-11-18
申请号：EP13870926.6
申请日：2013-12-25
Applicant: Toray Industries, Inc.
Inventor： MORI, Kentaro , UEBAYASHI, Hiroyuki
CPC classification number: C09D1/00 , C08J7/045 , C08J2365/00 , C08J2367/02 , C08J2475/04 , C08J2483/16 , C23C14/08 , C23C14/086 , H01L51/524 , Y10T428/31598
Abstract: [Problem] The present invention aims to provide gas barrier film that has high gas barrier properties and high flex resistance. [Solution] The gas barrier film according to the invention includes a polymer base having an inorganic layer [A] and a silicon compound layer [B] stacked in this order at least on one side of the polymer base, the inorganic layer [A] containing a zinc compound and silicon oxide, the silicon compound layer [B] containing silicon oxynitride, and the inorganic layer [A] and the silicon compound layer [B] being in contact with each other.
Abstract translation: 本发明的目的在于提供气体阻隔性高且耐弯曲性高的气体阻隔性膜。 根据本发明的阻气膜包括聚合物基材，无机层[A]和硅化合物层[B]在聚合物基材的至少一侧上依次堆叠，无机层[A] 含有锌化合物和氧化硅的硅化合物层[B]，含有氮氧化硅的硅化合物层[B]和无机层[A]和硅化合物层[B]彼此接触。
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Patent Agency Ranking26.发明授权
公开(公告)号：EP2508497B1
公开(公告)日：2015-11-04
申请号：EP12165269.7
申请日：2008-09-29
Applicant: Mitsubishi Materials Corporation
Inventor： Mayuzumi, Yoshitaka
IPC: C04B35/453 , C04B38/02 , C23C14/34 , H01B5/14 , C04B35/626 , C23C14/08 , H01B1/08 , H05B33/28
CPC classification number: C04B38/02 , C04B35/453 , C04B35/6261 , C04B35/6263 , C04B35/6264 , C04B35/62655 , C04B35/62695 , C04B38/009 , C04B38/08 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3284 , C04B2235/3286 , C04B2235/3409 , C04B2235/5427 , C04B2235/5436 , C04B2235/5445 , C04B2235/5481 , C04B2235/604 , C23C14/08 , C23C14/086 , C23C14/24 , C23C14/3414 , H01B1/08 , H01L51/442 , H05B33/28 , C04B38/0074 , C04B38/0645
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27.发明公开
公开(公告)号：EP2904128A1
公开(公告)日：2015-08-12
申请号：EP13776932.9
申请日：2013-10-04
Applicant: Corning Incorporated , Bellman, Robert A. , Clark, Jeremy, Curtis , Sachenik, Paul Arthur , Simpson, Lynn, Bernard , Tian, Lili
Inventor： BELLMAN, Robert, Alan , CLARK, Jeremy, Curtis , SACHENIK, Paul, Arthur , SIMPSON, Lynn, Bernard , TIAN, Lili
CPC classification number: H01B1/08 , C23C14/086 , C23C14/3485 , H01B5/14 , H01L31/022483 , H01L31/1884 , Y02E10/50 , Y10T428/24355
Abstract: Disclosed are AZO films deposited on a transparent substrate by pulse DC using an oxide target with a composition in the range 0.5-2 wt % Al2O3, desirably at temperature above 325° C., resulting in films showing columnar grain structure with columns extending from the top to the bottom of the film, and small lateral grain size (less than 70 nm from substrate to top of film). The film has low resistivity at less than 10 Ohm/square at a thickness less than 400 nm, resistivity is desirably unchanged by annealing at temperatures of up to 450° C.
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28.发明公开COMPLEX OXIDE SINTERED BODY, SPUTTERING TARGET, TRANSPARENT CONDUCTIVE OXIDE FILM, AND METHOD FOR PRODUCING SAME 审中-公开复合氧化物烧结体，溅射靶，用于生产透明导电氧化物膜和过程
公开(公告)号：EP2789595A4
公开(公告)日：2015-05-06
申请号：EP12855745
申请日：2012-11-29
Applicant: TOSOH CORP
Inventor： KURAMOCHI HIDETO , TAMANO KIMIAKI , IIGUSA HITOSHI , AKIIKE RYO , SHIBUTAMI TETSUO
CPC classification number: H01B1/08 , C04B35/01 , C04B35/6262 , C04B2235/3225 , C04B2235/3244 , C04B2235/3286 , C04B2235/5445 , C04B2235/549 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/6585 , C04B2235/6586 , C04B2235/77 , C04B2235/786 , C23C14/083 , C23C14/086 , C23C14/34 , C23C14/3414 , H01J37/3429
Abstract: The present invention provides a complex oxide sintered body 10 wherein Zr/(In + Zr + Y) is 0.05 to 4.5 at% and Y/(In + Zr + Y) is 0.005 to 0.5 at% in an atomic ratio when indium, zirconium, and yttrium are designated by In, Zr, and Y, respectively. Moreover, the present invention provides a sputtering target including the complex oxide sintered body 10 and a transparent conductive oxide film obtained by sputtering the sputtering target.
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29.发明公开ZINC OXIDE FILM-FORMING COMPOSITION, ZINC OXIDE FILM PRODUCTION METHOD, AND ZINC COMPOUND 有权氧化锌成膜组合物，氧化锌膜制造方法和锌连接
公开(公告)号：EP2684917A4
公开(公告)日：2015-04-29
申请号：EP12755681
申请日：2012-01-12
Applicant: ADEKA CORP
Inventor： YOSHINAKA ATSUYA , ABE TETSUJI
IPC: C09D1/00 , C07C69/72 , C07C211/09 , C07C211/65 , C07F3/06 , H01B5/14 , H01B13/00
CPC classification number: C09D5/24 , C07C211/65 , C07F3/06 , C09D1/00 , C23C14/086 , C23C18/1216 , C23C18/42
Abstract: Disclosed are a composition for forming a zinc oxide-based film, said composition containing, as an essential component, a zinc compound represented by the following formula (1): wherein R 1 and R 2 mutually independently represent an alkyl group having 1 to 4 carbon atoms, a process for producing the zinc oxide-based film, and the zinc compound. The composition makes it possible to form a high-quality zinc oxide-based film, which has transparency, homogeneity and electrical conductivity, at a low temperature of 300°C or lower.
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30.发明授权
公开(公告)号：EP2194158B1
公开(公告)日：2015-03-25
申请号：EP08834432.0
申请日：2008-09-29
Applicant: Mitsubishi Materials Corporation
Inventor： MAYUZUMI, Yoshitaka
IPC: C04B35/453 , C04B35/626 , C04B38/02 , C23C14/08 , C23C14/34 , H05B33/28 , H01B1/08
CPC classification number: C04B38/02 , C04B35/453 , C04B35/6261 , C04B35/6263 , C04B35/6264 , C04B35/62655 , C04B35/62695 , C04B38/009 , C04B38/08 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3284 , C04B2235/3286 , C04B2235/3409 , C04B2235/5427 , C04B2235/5436 , C04B2235/5445 , C04B2235/5481 , C04B2235/604 , C23C14/08 , C23C14/086 , C23C14/24 , C23C14/3414 , H01B1/08 , H01L51/442 , H05B33/28 , C04B38/0074 , C04B38/0645
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