摘要:
An integrated circuit is provided with at least one processing unit (TM), a cache memory (L2 BANK) having a plurality of memory modules, and remapping means (RM) for performing an unrestricted remapping within said plurality of memory modules. Accordingly, faulty modules can be remapped without limitations in order to optimise the utilization of the memory modules by providing an even distribution of the faulty modules.
摘要:
A data management apparatus and method used in a system using one or more flash memories, which can deal with defective blocks in each of the flash memories using different methods depending on how the system manages data stored in each of the flash memories. The data management apparatus includes a device driver (300), which controls the operation of one or more flash memories, and a controller (400), which transfers data stored in a defective block of one of the flash memories to a predetermined block in the flash memory (510,520).
摘要:
A semiconductor memory device comprises at least one memory plane (4) in which a plurality of memory blocks (5) are arranged, and a block decoder circuit which decodes a block address signal for selecting the memory block (5) from the memory plane (4) and outputs block selection signals (BSEL0 to 3) for selecting the memory block, as well as puts all of the block selection signals in a selected state and output them in a predetermined test mode, and a block selection signal inversion circuit which inverts or non-inverts signal levels of the block selection signals (BSEL0 to 3).
摘要:
A non volatile memory of the type comprising a predetermined number of sectors capable of ensuring the operation of the same even with a lower number of defective sectors than a predetermined limit.
摘要:
Each of a plurality of storage devices (N-1 to N-n) has a plurality of memory blocks for storing data. A data writing apparatus obtains error information which represents good blocks which can store data correctly, from the plurality of storage devices (N-1 to N-n). The data writing apparatus determines a memory block in which data is to be written, in each of the plurality of storage devices (N-1 to N-n), based on the obtained error information. The data writing apparatus controls the plurality of storage devices (N-1 to N-n), and writes predetermined data in the determined memory blocks.
摘要:
A method of using an integrated circuit with at least one defect, said method comprising the steps of determining the location of one or more defects in said integrated circuit; selecting a program to be stored on said integrated circuit, said program being selected on the basis of the location of said one or more defects; and loading said program onto said integrated circuit.
摘要:
A device for replacing defective storage locations with working storage locations comprises receiving means for receiving an incoming address for accessing a storage location, comparing means for comparing the incoming address with all of the addresses of known defective storage locations, and directing means for directing accesses to an alternative location when the incoming address matches one of the addresses of known defective storage locations. There is one alternative storage location and one comparing means for each known defective storage location. In this invention only a portion of the incoming address is used in the comparing means. In addition, each of the comparing means may use a different portion of the address for accessing a storage location.
摘要:
This invention provides column redundancy circuits in a storage array, which circuits are used in a non-volatile memory chip to increase the production yield due to manufacturing defects. The invention includes a scheme to latch and transfer the redundancy information, a redundancy logic circuit, a redundancy column driver, an array architecture with column redundancy, a scheme to program and read the column redundancy memory cells, a scheme to multiplex the fuses, and circuits to use an out-of-bound address as a column redundancy enable/disable signal.
摘要:
A system and method for wafer scale integration optimized for medium die size integrated circuits by interconnecting a large number of separate memory (or other circuit) modules on a semiconductor wafer so as to electrically exclude both defective modules and defective interconnect/power segments, and include operative modules and interconnect/power segments. A set of discretionary connections are associated with each of the separate modules and interconnect/power segments and such connections are made (or broken) after a module or interconnect or power segment is tested. A power supply network is set up by combining operative power segments. A bidirectional bus is set up by combining operative interconnect segments to connect to each operative modules. This bidirectional bus consists of one or more hierarchies for speed, power and yield considerations. Each module is assigned an identity code using discretionary connections.