Transistor element
    21.
    发明公开
    Transistor element 失效
    晶体管元件

    公开(公告)号:EP0109576A3

    公开(公告)日:1985-10-16

    申请号:EP83110610

    申请日:1983-10-24

    IPC分类号: H01L27/06

    摘要: Ein erster Feldeffekttransistor (4) ist mit Drain und Source zwischen Kollektor und Basis eines bipolaren Transi stors (2) geschaltet. Durch eine entsprechende Steuerspan nung auf dem Gate (G) kann dieser FET (4) den bipolaren Transistor nahezu verlustlos ein- und ausschalten. Ein zwei ter Feldeffekttransistor (5) ist mit Drain und Source zwischen Basis und Emitter des bipolaren Transistors geschaltet und führt beim Sperren des bipolaren Transistors akkumulierte Ladungen rasch ab. Dadurch entsteht ein Schaltelement, das hohe Ströme bei niedrigen Steuerverlusten mit hoher Geschwindigkeit zu schalten ermöglicht.

    摘要翻译: 第一场效应晶体管(4)通过其漏极和源极连接在双极晶体管(2)的集电极和基极之间。 由于门(G)处的合适的控制电压,该FET(4)能够实际上没有损耗地开启和关闭双极晶体管。 第二场效应晶体管(5)通过其漏极和源极连接在双极晶体管的基极和发射极之间,并且当双极晶体管截止时,快速去除积累的电荷。 这产生开关元件,其使得可以以高速度以低的控制损耗切换高电流。

    Switching circuit
    23.
    发明公开
    Switching circuit 失效
    开关电路

    公开(公告)号:EP0059537A2

    公开(公告)日:1982-09-08

    申请号:EP82300593.9

    申请日:1982-02-05

    IPC分类号: H03K17/04

    CPC分类号: H03K17/601 H03K17/0422

    摘要: A switching circuit comprises a switching transistor (26) having a base (28), an emitter (24) and a collector (34), a transformer (18) having a primary winding (20) and a secondary winding (22) one end (12) of which is coupled to the emitter and the other end (16) of which is coupled through a diode (30) to the collector. A resistor (36) is connected between the base and the emitter. The secondary winding (22) has a centre tap (14) connected to the base of the transistor. The diode (30) is arranged to conduct current into the collector and divert current available to the base emitter junction to prevent the collector base junction from being forward biased.

    摘要翻译: 开关电路包括具有基极(28),发射极(24)和集电极(34)的开关晶体管(26),具有初级绕组(20)和次级绕组(22)的变压器(18) (12)耦合到发射极并且其另一端(16)通过二极管(30)耦合到集电极。 一个电阻(36)连接在基极和发射极之间。 次级绕组(22)具有连接到晶体管基极的中心抽头(14)。 二极管(30)被布置成将电流传导到集电极并且将可用于基极发射极结的电流转向以防止集电极基极结被正向偏置。

    CIRCUIT FOR DRIVING A SWITCHING TRANSISTOR
    24.
    发明授权
    CIRCUIT FOR DRIVING A SWITCHING TRANSISTOR 有权
    一种用于控制一个开关晶体管

    公开(公告)号:EP0972342B1

    公开(公告)日:2004-11-10

    申请号:EP99906175.7

    申请日:1999-01-20

    IPC分类号: H03K17/0422 H03K17/60

    CPC分类号: H03K17/0422 H03K17/601

    摘要: Circuits for driving a switching transistor (T3) with a driver stage (T2, T4, T5, L1), as are used for example in horizontal deflection stages of television sets or computer monitors, are known in a wide variety of embodiments. The invention specifies a power-efficient and cost-effective circuit of this type which contains a comparator circuit (T1), which monitors the voltage (UC) across the current input of the switching transistor (T3) for the purpose of monitoring saturation by comparing said voltage with a reference voltage (UR), thereby effecting regulation. The comparator circuit may be realised, e.g. by a simple transistor circuit (T1), the reference voltage (UR) being applied to the control input of said transistor circuit, the current input of said transistor circuit being connected to the drive signal (US) of the driver stage, and the current output of said transistor circuit being connected to the voltage (UC) via the current input of the switching transistor (T3).

    High-speed switching regulator drive circuit
    27.
    发明公开
    High-speed switching regulator drive circuit 失效
    Schaltreglertreiberschaltung mit hoher Schaltgeschwindigkeit。

    公开(公告)号:EP0677861A2

    公开(公告)日:1995-10-18

    申请号:EP95105641.5

    申请日:1995-04-13

    IPC分类号: H01H47/32

    摘要: A drive circuit for a high-speed integrated circuit, bipolar switching regulator is disclosed. The circuit runs at megahertz frequencies, yet is efficient as previously available bipolar integrated circuit switching regulators operating at much lower frequencies. The circuitry provides three switch drive currents: a first (nominal) current that is provided while the switch is off in order to conserve power; a second (boosted) current, provided while the switch is transitioning from off to on in order to increase the speed at which the switching element switches on; and a third (drive) current, provided after the switch has turned on for maintaining the switch at a desired point in saturation. The drive current, additionally, varies as a function of the load on the switch in order, again, to conserve power. Additional circuitry increases the speed at which the switch turns off, by momentarily boosting base discharge current during the on-to-off transition period of the switch. The circuitry also increases speed by enabling the drive current prior to switch turn on. The circuitry can regulate both positive and negative outputs using a common error amplifier, as well as providing a multifunction node for shutdown and synchronization. Additionally, the circuitry provides improved recovery from output overshoot conditions. An improved clamp, to prevent the switch from spending too much time in a high power state (which would slow the switch down), increases the stability of the switch as compared with previously known designs.

    摘要翻译: 公开了一种用于高速集成电路,双极开关调节器的驱动电路。 该电路以兆赫兹频率运行,但是如先前可用的双极型集成电路开关稳压器以低得多的频率工作,这是有效的。 电路提供三个开关驱动电流:在开关断开时提供的第一(标称)电流,以节省功率; 当开关从断开转换到接通时提供第二(升压)电流,以提高开关元件接通的速度; 以及在开关导通以将开关保持在期望的饱和点之后提供的第三(驱动)电流。 此外,驱动电流根据开关上的负载而变化,从而节省功率。 附加电路通过在开关的接通到断开过渡期间瞬间升高基极放电电流来增加开关截止的速度。 电路还可以通过在开关导通之前启用驱动电流来提高速度。 电路可以使用公共误差放大器调节正输出和负输出,以及提供关闭和同步的多功能节点。 此外,该电路提供从输出过冲条件改进的恢复。 改进的夹具,以防止开关花费太多的时间在高功率状态(这将减慢开关降低),与先前已知的设计相比,提高了开关的稳定性。

    Clamping circuit
    28.
    发明公开
    Clamping circuit 失效
    钳位电路

    公开(公告)号:EP0504559A3

    公开(公告)日:1993-04-07

    申请号:EP92101390.0

    申请日:1992-01-28

    IPC分类号: H03K17/04 H03K19/013

    CPC分类号: H03K17/0422

    摘要: A semiconductor integrated circuit includes a current source (1) for supplying a current i, a resistor (2), a switch (3) having a control end connected to the resistor (2), an output terminal (4) connected to the output end of the switch, a comparator (5) having a current path which is connected at one end to a connection node between the resistor (2) and the control end of the switch (3) and connected at the other end to the output terminal (4). The comparator (5) compares a voltage (i × R) occurring across the resistor (2) with a potential V of the output terminal (4) and permits the current i to flow into the output terminal (4) when the relation ( i × R ≧ V ) is attained.

    摘要翻译: 一种半导体集成电路,包括:用于供给电流i的电流源(1),电阻器(2),具有连接到电阻器(2)的控制端的开关(3),连接到输出端的输出端子(4) (2)和开关(3)的控制端之间的连接节点,并且在另一端连接到开关(3)的输出端子的比较器(5)具有电流路径 (4)。 比较器(5)将发生在电阻器(2)两端的电压(i×R)与输出端子(4)的电位V进行比较,并且当关系(i)时,允许电流i流入输出端子 ×R≥V)。

    Selbstregelnde Treiberschaltung mit Sättigungsgradregelung für den Basisstrom eines Leistungstransistors
    29.
    发明公开
    Selbstregelnde Treiberschaltung mit Sättigungsgradregelung für den Basisstrom eines Leistungstransistors 失效
    Basisstrom eines Leistungstransistors,Selbstregelnde Treiberschaltung mitSättigungsgradregelungfürden Basisstrom eines Leistungstransistors。

    公开(公告)号:EP0373240A1

    公开(公告)日:1990-06-20

    申请号:EP88120832.6

    申请日:1988-12-13

    IPC分类号: H03K17/04 H03K17/08

    CPC分类号: H03K17/0422 H03K17/0826

    摘要: Die erfindungsgemäße Basisstromregelung dient insbesondere zur freien Einstellung des gewünschten Sättigungsgrades eines Lei­stungstransistors (T1) im eingeschalteten Zustand. Hierzu stellt eine parallel arbeitende Sättigungsgradregelung (SBR) durch Aus­werten der mittels einer Ankoppeldiode (D2) abgegriffenen Span­nung (U CET1 ) am Ausgang des Leistungstransistors eine Hilfs­stellgröße (Δi BT1 ) im Kleinsignalbereich zur Verfügung. Diese wird bevorzugt dem Eingang eines Leistungsstellgliedes (LSG) in einer gesteuerten Treiberstufe (STS) zugeführt, welche die eigentliche Ansteuerenergie (SE) für den Basisstrom (I BT1 ) des Leistungstransistors (T1) bereitstellt.

    摘要翻译: 根据本发明的基极电流调节特别用于在接通状态下自由调节功率晶体管(T1)的期望饱和电平。 为此,通过评估通过耦合二极管(D2)拾取的功率晶体管的输出端的电压(UCET1),辅助校正变量(DELTA) iBT1)在小单一范围内。 优选地,在功率晶体管(T1)的基极电流(IBT1)提供实际驱动能量(SE)的受控驱动级(STS)中的功率控制器(LSG)的输入端。 ... ...

    Circuit arrangement with a high voltage bipolar transistor
    30.
    发明公开
    Circuit arrangement with a high voltage bipolar transistor 失效
    具有高压双极晶体管的电路布置

    公开(公告)号:EP0272744A3

    公开(公告)日:1989-07-26

    申请号:EP87202500.2

    申请日:1987-12-14

    发明人: Gent, Derek James

    IPC分类号: H03K17/04 H03K4/64

    CPC分类号: H03K17/0422 H03K4/62

    摘要: A high voltage bipolar transistor (TR1) is provided in a line deflection circuit comprising a diode (D), a retrace capacitor (CR), a trace capacitor (CT) and a deflection coil (Ly) connected as shown. The transistor (TR1) is controlled from a line oscillator (LO) whose pulse waveform is applied by way of a driver stage (DR) and a stage (AC) controlling the amplitude of the forward current for the base of the transistor (TR1). A signal representing the amplitude of the relative power in the transistor (TR1) is derived from a power sensor (PS) and applied to a power minimum detector (PM) whose output controls the amplitude control stage (AC) to set the transistor (TR1) for minimum power dissipation.