摘要:
An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers (10A, 12A) are provided, one of which is a part of a master oscillator (10) producing a very narrow band seed beam which is amplified in the second discharge chamber (12). The chambers (10A, 12A) can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator (10) and optimization of pulse energy parameters in the amplifying chamber (12A). A preferred embodiment in an ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber (10A, 12A) comprises a single tangential fan (10A, 10) providing sufficient gas flow (11) to permit operation at pulse rates of 4,000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator (10) is equipped with a line narrowing package (16, 16A) having a very fast tuning mirror capable of controlling centerline wavelength on a pulse-to-pulse basis at repetition rates of 4,000 Hz or greater to a precision of less than 0.2 pm.
摘要:
A gas discharge laser capable of operating at pulse rates in the range of 4,000 Hz to 6,000 Hz at pulse energies in the range of 5 mJ to 10 mJ or greater. Important improvements over the prior art designs include: (1) a squirrel cage type fan (46A) for producing gas velocities in the discharge region of more than 67 m/s, (2) a liquid cooled drive motor having a low loss sealing member separating the motor from the motor starter and protecting the motor from the laser and breach detection device for detecting any breach of the sealing member, (3) a heat exchanger system (58A) capable of removing in excess of 16 kW of heat energy from the laser gas and (4) a pulse power system capable of providing precisely controlled electrical pulses to the electrodes (18A, 20A) to produce laser pulses at the desired pulse energies in the range of 5 mJ to 10 mJ or greater at pulse repetition rates in the range of 4,000 Hz to 6,000 Hz.
摘要:
A high pulse rate pulse power source (20) for supplying controlled high energy electrical pulses at rates of 2000 Hz or greater. The source (20) includes a pulse generating circuit (30) including a charging capacitor (42), a solid state switch (46) and a current limiting inductor (48). Pulses generated in the pulse generating circuit (30) are compressed in at least two pulse compression circuits (61, 65) and a step-up pulse transformer (56) increases peak voltage to at least 12,000 volts. A very fast regulated power supply is provided for charging the charging capacitor (42) in less than 400 microseconds and a pulse control system including a programmed processor (102) controls the charging of the charging capacitor (42) to an accuracy of less than about one percent at a rate of at least 2000 charges per second.
摘要:
A single chamber gas discharge laser system having a pulse power source for producing electrical discharges at the rate of at least 1000 pulses per second. The discharge, along with laser optics, create two short lived gain media, one for producing a seed beam and the other for amplifying the seed beam. Laser gas circulation around a chamber circulation path is provided and the electrodes (18A) and discharges are arranged so that debris from one of the gain medium is not circulated to the other gain medium during discharges until the debris has made a loop around at least 90 % of the chamber circulation path.
摘要:
A turnable injection seeded very narrow band F2 lithography laser. The laser (60) combines modular design features of prior art long life reliable lithography lasers with special techniques to produce a seed beam (LNP15) operated in a first gain medium which beam (102) is used to stimulate narrow bnd lasing in a second gain medium to produce a very narrow band laser useful for integrated circuit lithography. In a preferred embodiment, two tunable etalon output couplers (164A, 164B) are used to narrow band an F2 laser and the output of the seed laser is amplified in an F2 amplifier.
摘要:
A reliable, modular, production quality F 2 excimer laser capable of producing, at repetition rates in the range of 1,000 to 2,000 Hz or greater, laser pulses with pulse energies greater than 10 mJ with a full width half, maximum bandwidth of about 1 pm or less at wavelength in the range of 157 nm. Laser gas concentrations are disclosed for reducing unwasted infrared emissions from the laser. Also disclosed are UV energy detectors which are substantially insensitive to infrared light. Preferred embodiments of the present invention can be operated in the range of 1000 to 4000 Hz with pulse energies in the range of 10 to 5 mJ with power outputs in the range of 10 to 40 watts. Using this laser as an illumination source, stepper or scanner equipment can produce integrated circuit resolution of 0.1 µm or less. Replaceable modules include a laser chamber and a modular pulse power system. In a preferred embodiment the laser was tuned to the F 2 157.6 nm line using a set of two external prisms. In a second preferred embodiment the laser is operated broad band and the 157.6 nm line is selected external to the resonance cavity. In a third preferred embodiment a line width of 0.2 pm is provided using injection seeding. Another embodiment utilizes a grating for line selection and increases the tuning range by operating the laser at a pressure in excess of 4 atmospheres.
摘要:
A Q-switched solid state laser system (24) operates in a pulse processing control system (10) that employs an autopulse mode and a pulse-on-position mode to stabilize the pulse-to-pulse laser energy delivered to a workpiece (20) that is moved by an X-Y positioner (18). In the autopulse mode, laser pulses are emitted at a near maximum PRF, but the pulses are blocked from reaching the workpiece by an external modulator (28, 32), such as an acousto-optic modulator ('AOM') or electro-optic modulator (also referred to as a Pockels cell). In the pulse-on-position mode, the laser emits a pulse in response to the positioner moving to a location on the workpiece that coincides with a commanded coordinate location. The processing control system delivers a stream of coordinate locations, some requiring processing, at a rate that moves the positioner and triggers the laser at about the near maximum PRF. The pulse processing control system sets the AOM to a transmissive state whenever a coordinate location requiring processing is commanded and otherwise sets the AOM to a blocking state. This pulse timing technique provides a nearly constant interpulse period for the laser, thereby improving its pulse-to-pulse energy stability at the near maximum PRF.
摘要:
An excimer or molecular fluorine laser, such as a KrF- or ArF-laser, or a molecular fluorine (F2) laser, particularly for photolithography applications, has a gas mixture including a trace amount of a gas additive. The concentration of the gas additive in the gas mixture is optimized for improving energy stability and/or the overshoot control of the laser output beam. The concentration is further determined and adjusted at new fills and/or during laser operation based on its effect on the output pulse energy in view of constraints and/or aging on the discharge circuit and/or other components of the laser system. Attenuation control is also provided for increasing the lifetimes of components of the laser system by controlling the concentration of the gas additive over time. A specific preferred concentration of xenon is more than 100 ppm for improving the energy stability and/or overshoot control. The laser system may be equipped with an internal gas supply unit including an internal xenon gas supply, or a xenon generator for supplying xenon gas from condensed matter xenon.
摘要:
A technique of stabilizing during operation a gas mixture with a gas composition initially provided within a discharge chamber of an excimer or molecular fluorine gas discharge laser includes monitoring a temporal pulse shape of the laser beam and adjusting and/or determining the status of the gas mixture based on the monitored temporal pulse shape. The monitored temporal pulse shape is preferably compared with a reference temporal pulse shape. The difference or deviation between the monitored temporal pulse shape and a reference temporal pulse shape is calculated. The amounts of and intervals between gas replenishment actions are determined based on the calculated deviation. The energy of the beam is also monitored and the driving voltage and gas actions are adjusted to stabilize the energy, energy stability and/or energy dose.