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48 条记录 (耗时 0.012 秒)

    Photoconductor-photocathode imager
    31.
    发明公开
    Photoconductor-photocathode imager 审中-公开
    Bilderzeuger mit Fotoleiter-Fotokathode

    公开(公告)号：EP0955664A1

    公开(公告)日：1999-11-10

    申请号：EP99303523.7

    申请日：1999-05-05

    申请人： Infimed, Inc.

    发明人： Vogelsong, Thomas Lee ,  Iodice, Robert M.

    IPC分类号： H01J31/49

    CPC分类号： H01J31/49 ,  H01J2231/50036 ,  H01J2231/50084

    摘要： A high resolution radiation sensitive imager includes a radiation sensitive photoconductive target (26) for forming an image in response to incident radiation, a light sensitive cathode (40) arranged in spaced apart relationship with the target, and an addressable light source (24) coupled to the photocathode for causing the photocathode to emit electrons at localized sites for reading an image on the target.

    摘要翻译： 高分辨率的辐射敏感成像器包括用于响应于入射辐射形成图像的辐射敏感光电导靶（26），与目标物间隔开的关系的光敏阴极（40）和与目标物间隔开的关系的可寻址光源（24） 涉及使光电阴极在局部位置发射电子的光电阴极，用于读取靶上的图像。

    Tube intensificateur d'image radiologique à sortie video et chaîne de radiologie comportant un tel tube
    34.
    发明公开
    Tube intensificateur d'image radiologique à sortie video et chaîne de radiologie comportant un tel tube 失效
    的X射线图像增强管具有视频输出和放射性装置，包括这样的管中。

    公开(公告)号：EP0013241A1

    公开(公告)日：1980-07-09

    申请号：EP79401064.5

    申请日：1979-12-21

    申请人： THOMSON-CSF

    发明人： Ricodeau, Jean ,  Rougeot, Henri

    IPC分类号： H01J29/39 ,  H01J31/36

    CPC分类号： H01J31/49 ,  H01J29/39

    摘要： L'invention concerne un tube intensificateur d'image radiologique à sortie vidéo.
    Le tube comporte, dans une même enveloppe à vide, une section image et une section d'analyse ayant une face commune occupée par le cible 16. Dans la section image est formée, dans la cible, une image électrique correspondant à l'image en rayons X incidente; cette image est lue dans la section d'analyse par un pinceau d'électrons balayant la cible point par point. Cette cible a, dans les tubes de l'invention, une structure permettant de limiter le gain photons X - signal vidéo et de la régler entre deux valeurs prédéterminées; elle comporte, sur sa face qui reçoit les photo-électrons e - ; une couche barrière en métal 1 recouvrant une couche luminescente 2, en contact elle-méme avec une couche semi-transparente 3 recouvrant la cible proprement dite 4.
    Application, dans une large gamme, de doses indicentes, en fluoroscopie comme en fluorographie.

    RADIOGRAPHIC IMAGE DETECTOR
    35.
    发明公开
    RADIOGRAPHIC IMAGE DETECTOR 审中-公开
    RÖNTGENBILDDETEKTOR

    公开(公告)号：EP2416176A1

    公开(公告)日：2012-02-08

    申请号：EP10758456.7

    申请日：2010-03-19

    申请人： Tokuyama Corporation ,  Tohoku University ,  Kyoto University ,  The University of Tokyo

    发明人： FUKUDA, Kentaro ,  ISHIZU, Sumito ,  KAWAGUCHI, Noriaki ,  SUYAMA, Toshihisa ,  YOSHIKAWA, Akira ,  YANAGIDA, Takayuki ,  YOKOTA, Yui ,  KUBO, Hidetoshi ,  TANIMORI, Toru ,  SEKIYA, Hiroyuki

    IPC分类号： G01T1/18 ,  G01T1/20 ,  H01J31/50

    CPC分类号： G01T1/28 ,  H01J31/49 ,  H01J47/02

    摘要： [Problems to be Solved] It is an object of the present invention to provide a novel radiographic image detector which can detect radiation, such as hard X-rays or γ-rays, with high sensitivity and which is excellent in position resolution and count rate characteristic.
    [Means to Solve the Problems] A radiographic image detector comprises a combination of a scintillator, such as a lanthanum fluoride crystal containing neodymium, for converting incident radiation into ultraviolet rays; and a gas multiplication ultraviolet image detector for converting ultraviolet rays into electrons, amplifying such electrons by use of a gas electron avalanche phenomenon, and detecting the electrons. The radiographic image detector is characterized in that the gas multiplication ultraviolet image detector is basically constituted by a photoelectric conversion substance, such as cesium iodide or cesium telluride, for converting ultraviolet rays into electrons; a gas electron multiplier for amplifying electrons by use of the gas electron avalanche phenomenon; and a pixel electrode having an amplification function and a detection function.

    摘要翻译： [待解决的问题]本发明的目的是提供一种能够以高灵敏度检测诸如硬X射线或³射线等辐射的新型放射线图像检测器，其位置分辨率和计数率优异 特性。 解决问题的手段放射线图像检测器包括闪烁体，例如含有钕的氟化镧晶体，用于将入射辐射转换为紫外线的组合; 以及用于将紫外线转换成电子的气体倍增紫外线图像检测器，利用气体电子雪崩现象来放大这些电子，并检测电子。 射线照相图像检测器的特征在于，气相色谱紫外图像检测器基本上由诸如碘化铯或碲化铯的光电转换物质构成，用于将紫外线转换成电子; 用于通过使用气体电子雪崩现象来放大电子的气体电子倍增器; 以及具有放大功能和检测功能的像素电极。

    ELECTRON TUBE
    37.
    发明授权
    ELECTRON TUBE 有权
    电子管

    公开(公告)号：EP1152448B1

    公开(公告)日：2009-07-15

    申请号：EP99901128.1

    申请日：1999-01-21

    申请人： HAMAMATSU PHOTONICS K.K.

    发明人： SUYAMA, Motohiro ,  KAGEYAMA, Akihiro ,  MURAMATSU, Masaharu

    IPC分类号： H01J29/44 ,  H01J31/26 ,  H01J31/49 ,  H01L27/148

    CPC分类号： H01J31/26 ,  H01J31/49 ,  H01J2231/50073

    摘要： An electron tube (10) is mainly composed of a side tube (12), an input plate (14) having a photocathode (18), a stem (16), and a CCD device (20). The inside of the electron tube (10) is in a high vacuum state. The CCD device (20) is secured to the stem (16), with the back (B) of the CCD device (20) opposed to the photocathode (18). In the CCD device (20), on a semiconductor substrate (64) made of a semiconductor of one conductivity type are formed a buried layer (66), a barrier layer (68), an SiO2 layer (70), a storage electrode layer (72), a transfer electrode layer (74), and a barrier electrode layer (76) in respective predetermined positions. On them, a PSG film (78) is formed over the entire surface (A) to palanarize the surface of the CCD device (20). Further, on the film (78), an SiN film (106) mainly made of SiN is formed over the entire surface (A).

    INTENSIFIED HYBRID SOLID-STATE SENSOR
    39.
    发明公开
    INTENSIFIED HYBRID SOLID-STATE SENSOR 有权
    强化的混合固态传感器

    公开(公告)号：EP1741121A1

    公开(公告)日：2007-01-10

    申请号：EP05735697.4

    申请日：2005-04-11

    申请人： ITT Manufacturing Enterprises, Inc.

    发明人： BENZ, Rudolph, G. ,  THOMAS, Nils, I. ,  SMITH, Arlynn, W.

    IPC分类号： H01J31/26 ,  H01J31/48

    CPC分类号： H01J31/48 ,  G01T1/2957 ,  H01J31/26 ,  H01J31/49 ,  H01J2231/50068 ,  H01J2231/5016

    摘要： An intensified solid-state imaging sensor (41) includes a photo cathode (54) for converting light from an image into electrons, an electron multiplying device (53) for receiving electrons from the photo cathode, and a solid-state image sensor (56) including a plurality of pixels for receiving the electrons from the electron multiplying device through a plurality of channels of the electron multiplying device. The solid-state image sensor generates an intensified image signal from the electrons received from the electron multiplying device. The plurality of channels are arranged in a plurality of channel patterns, and the plurality of pixels are arranged in a plurality of pixel patterns. Each of the plurality of channel patterns is mapped to a respective one of the plurality of pixel patterns such that electron signals from each of the plurality of channel patterns is substantially received by the single respective one of the plurality of pixel patterns.

    摘要翻译： 增强型固态成像传感器（41）包括：用于将来自图像的光转换为电子的光电阴极（54）;用于从光阴极接收电子的电子倍增器（53）;以及固态图像传感器 ），其包括用于通过电子倍增器的多个通道从电子倍增器接收电子的多个像素。 固态图像传感器根据从电子倍增器接收的电子来生成强化图像信号。 多个通道排列成多个通道图案，并且多个像素排列成多个像素图案。 多个沟道图案中的每一个被映射到多个像素图案中的相应一个，使得来自多个沟道图案中的每一个的电子信号基本上被多个像素图案中的单个相应一个像素图案接收。

    ELECTRON TUBE
    40.
    发明公开
    ELECTRON TUBE 有权
    电子管

    公开(公告)号：EP1152448A4

    公开(公告)日：2006-04-19

    申请号：EP99901128

    申请日：1999-01-21

    申请人： HAMAMATSU PHOTONICS KK

    发明人： SUYAMA MOTOHIRO ,  KAGEYAMA AKIHIRO ,  MURAMATSU MASAHARU

    IPC分类号： H01J31/26 ,  H01J31/49 ,  H01J29/44 ,  H01L27/148

    CPC分类号： H01J31/26 ,  H01J31/49 ,  H01J2231/50073

    摘要： An electron tube (10) is mainly composed of a side tube (12), an input plate (14) having a photocathode (18), a stem (16), and a CCD device (20). The inside of the electron tube (10) is in a high vacuum state. The CCD device (20) is secured to the stem (16), with the back (B) of the CCD device (20) opposed to the photocathode (18). In the CCD device (20), on a semiconductor substrate (64) made of a semiconductor of one conductivity type are formed a buried layer (66), a barrier layer (68), an SiO2 layer (70), a storage electrode layer (72), a transfer electrode layer (74), and a barrier electrode layer (76) in respective predetermined positions. On them, a PSG film (78) is formed over the entire surface (A) to palanarize the surface of the CCD device (20). Further, on the film (78), an SiN film (106) mainly made of SiN is formed over the entire surface (A).