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148 条记录 (耗时 0.028 秒)

    Photovoltaic device
    32.
    发明公开
    Photovoltaic device 失效
    一种光电器件

    公开(公告)号：EP0827213A3

    公开(公告)日：1999-05-19

    申请号：EP97114860.6

    申请日：1997-08-27

    申请人： CANON KABUSHIKI KAISHA

    发明人： Sano, Masafumi ,  Nakamura, Tetsuro

    IPC分类号： H01L31/075 ,  H01L31/20

    CPC分类号： H01L31/076 ,  H01L31/056 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

    摘要： In a photovoltaic device having a plurality of pin structures, the pin structures comprise a first pin structure, a second pin structure and a third pin structure in the order from the light-incident side, each having an i-type semiconductor layer, and the i-type semiconductor layer of the first pin structure comprises amorphous silicon, the i-type semiconductor layer of the second pin structure comprises microcrystalline silicon and the i-type semiconductor layer of the third pin structure comprises amorphous silicon germanium or microcrystalline silicon germanium. The photovoltaic device according to the present invention provides a superior photoelectric conversion efficiency and less causing photo-deterioration.

    Photovoltaic device
    34.
    发明公开
    Photovoltaic device 失效
    Photovoltaische Vorrichtung

    公开(公告)号：EP0827213A2

    公开(公告)日：1998-03-04

    申请号：EP97114860.6

    申请日：1997-08-27

    申请人： CANON KABUSHIKI KAISHA

    发明人： Sano, Masafumi ,  Nakamura, Tetsuro

    IPC分类号： H01L31/075 ,  H01L31/20

    CPC分类号： H01L31/076 ,  H01L31/056 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

    摘要： In a photovoltaic device having a plurality of pin structures, the pin structures comprise a first pin structure, a second pin structure and a third pin structure in the order from the light-incident side, each having an i-type semiconductor layer, and the i-type semiconductor layer of the first pin structure comprises amorphous silicon, the i-type semiconductor layer of the second pin structure comprises microcrystalline silicon and the i-type semiconductor layer of the third pin structure comprises amorphous silicon germanium or microcrystalline silicon germanium. The photovoltaic device according to the present invention provides a superior photoelectric conversion efficiency and less causing photo-deterioration.

    摘要翻译： 在具有多个引脚结构的光电器件中，引脚结构包括从光入射侧开始的顺序的第一引脚结构，第二引脚结构和第三引脚结构，每个具有i型半导体层，并且 第一引脚结构的i型半导体层包括非晶硅，第二引脚结构的i型半导体层包括微晶硅，第三引脚结构的i型半导体层包括非晶硅锗或微晶硅锗。 根据本发明的光电器件提供了优异的光电转换效率并且导致光劣化较少。

    Photoelectric conversion element and power generation system using the same
    40.
    发明公开
    Photoelectric conversion element and power generation system using the same 失效
    Photoelektrischer Umwandler und Stromversorgungssytem mit Anwendung desselben。

    公开(公告)号：EP0600630A1

    公开(公告)日：1994-06-08

    申请号：EP93309116.7

    申请日：1993-11-15

    申请人： CANON KABUSHIKI KAISHA

    发明人： Saito, Keishi, c/o Canon Kabushiki Kaisha ,  Aoike, Tatsuyuki, c/o Canon Kabushiki Kaisha ,  Sano, Masafumi, c/o Canon Kabushiki Kaisha ,  Niwa, Mitsuyuki, c/o Canon Kabushiki Kaisha ,  Hayashi, Ryo, c/o Canon Kabushiki Kaisha ,  Tonogaki, Masahiko, c/o Canon Kabushiki Kaisha

    IPC分类号： H01L31/075 ,  H01L31/20

    CPC分类号： H01L31/065 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1884 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S136/293

    摘要： The present invention is directed to provide a photovoltaic element in which the open-circuit voltage and the carrier range of holes are improved by preventing the recombination of photoexcited carriers.
    The photovoltaic element composed of a p-type layer, an i-type layer of a lamination structure consisting of an i-type layer by RFPCVD on the p-type layer side and an i-type layer by microwave (µW) PCVD on the n-type layer side, or an i-type layer by microwave (µW) PCVD on the p-type layer side and an i-type layer by RFPCVD on the n-type layer side, characterized in that the i-type layer by µWPCVD is one formed by a µWPCVD in which a lower µW energy and a higher RF energy than µW energy to decompose source gas at 100% are simultaneously applied to a source gas containing Si and Ge at a pressure of 50mTorr or less, such that the minimum values of bandgap is biased toward the p-type layer side off the center of the i-type layer, and the i-type layer by RFPCVD is one formed 30nm thick or less by a RFPCVD using a source gas containing a silicon containing gas at a deposition rate of 2nm/sec or less.

    摘要翻译： 本发明旨在提供一种通过防止光激发载流子的复合来提高开路电压和空穴的载流子范围的光电元件。 由p型层构成的光电元件，由p型层侧的RFPCVD的i型层构成的层叠结构的i型层和微波（μW）PCVD的i型层 p型层侧的微波（μW）PCVD的n型层侧或i型层，n型层侧的RFPCVD为i型层，其特征在于，i型 WPCVD是由WPCVD形成的，其中在50mTorr的压力下，同时将含有较低的μW能量和比μW能量更高的RF能量分解为100％的源气体的源W 使得带隙的最小值偏离i型层的中心的p型层侧，并且通过RFPCVD的i型层是通过使用源的RFPCVD形成的30nm以下的层 含有含硅气体的气体以2nm / sec以下的沉积速率。