公开(公告)号：EP1805804A1

公开(公告)日：2007-07-11

申请号：EP05796064.3

申请日：2005-09-06

申请人： Nanosolar, Inc.

发明人： LEIDHOLM, Craig ,  BOLLMAN, Brent

IPC分类号： H01L31/0264 ,  H01L31/0272 ,  H01L31/04

CPC分类号： H01L31/0322 ,  H01L31/03928 ,  H01L31/1864 ,  Y02E10/541 ,  Y02P70/521

摘要： The present invention relates to fabrication of photovoltaic devices and more specifically to processing and annealing of absorber layers for photovoltaic devices. Embodiments of the present invention allow fabrication of CIGS absorber layers on aluminum foil substrates. For example, a photovoltaic device includes an aluminum foil substrate (102), an optional base electrode (104) and a nascent absorber (106) including material containing elements of groups IB, IIIA, and (optionally) VIA.

摘要翻译： 本发明涉及光伏器件的制造，更具体地涉及用于光伏器件的吸收层的加工和退火。 本发明的实施例允许在铝箔衬底上制造CIGS吸收层。 例如，光伏器件包括铝箔衬底（102），可选的基极（104）和包括含有IB，IIIA族和（可选）VIA元素的材料的新生吸收剂（106）。

公开(公告)号：EP1540741A2

公开(公告)日：2005-06-15

申请号：EP03773047.0

申请日：2003-09-04

申请人： Nanosys, Inc.

发明人： SCHER, Erik ,  BURETEA, Mihai, A. ,  CHOW, Calvin ,  EMPEDOCLES, Stephen ,  MEISEL, Andreas ,  PARCE, Wallace, J.

IPC分类号： H01L31/0256 ,  H01L31/0272 ,  H01L31/0296 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/04

CPC分类号： H01L31/04 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  H01L31/0384 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/4213 ,  H01L51/4226 ,  H01L51/426 ,  Y02E10/549 ,  Y02P70/521

摘要： Nanocomposite photovoltaic devices are provided that generally include semiconductor nanocrystals as at least a portion of a photoactive layer. Photovoltaic devices and other layered devices that comprise core-shell nanostructures and/or two populations of nanostructures, where the nanostructures are not necessarily part of a nanocomposite, are also features of the invention. Varied architectures for such devices are also provided including flexible and rigid architectures, planar and non-planar architectures and the like, as are systems incorporating such devices, and methods and systems for fabricating such devices. Compositions comprising two populations of nanostructures of different materials are also a feature of the invention.

公开(公告)号：EP1017109A3

公开(公告)日：2000-10-25

申请号：EP99307955.7

申请日：1999-10-08

申请人： Agency of Industrial Science and Technology of Ministry of International Trade and Industry

发明人： Niki, Shigeru ,  Yamada, Akimasa ,  Fons, Paul ,  Oyanagi, Hiroyuki

IPC分类号： H01L31/00 ,  H01L31/032 ,  H01L31/0336 ,  H01L31/0272

CPC分类号： H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

摘要： A method of fabricating Cuα(In x Ga 1-x )β(Se y S 1-y )γ films for solar cells includes forming an electrode on a substrate and supplying the substrate and electrode with Cu, In, Ga, Se, and S to form a Cuα(In x Ga 1-x )β(Se y S 1-y )γ film. Simultaneously with the supplying of Cu, In, Ga, Se and S, the substrate is supplied with water vapor or a gas that contains a hydroxyl group.

公开(公告)号：EP0326178A3

公开(公告)日：1990-06-27

申请号：EP89101545.5

申请日：1989-01-30

申请人： HITACHI, LTD. ,  NIPPON HOSO KYOKAI

发明人： Ogawa, Hirofumi ,  Sameshima, Kenji ,  Hirai, Tadaaki ,  Unnai, Takaaki ,  Yamamoto, Masanao ,  Shidara, Keiichi ,  Yamazaki, Junichi Gurin Puraza Hazumi 205 ,  Hiruma, Eikiyu ,  Suzuki, Shirou

IPC分类号： H01L31/20 ,  H01L31/107 ,  H01L31/0272

CPC分类号： H01L31/20 ,  H01J9/233 ,  H01L31/0272 ,  H01L31/095 ,  H01L31/1884 ,  Y02E10/50

摘要： A method of making an image pickup tube target (Fig. 1A), etc., using an amorphous photoconductive layer (4). When an electrode (2 or 7), an amorphous semicon­ductor layer (4), etc., are provided on a substrate (1 or 6), the steps of ion etching away a surface of the substrate (1 or 6) and forming the electrode (2 or 7) are performed so that a target (Fig. 1A) is produced in which no defects are substantially caused in a reproduced image even if a high electric field is applied across the target.

公开(公告)号：EP3157064B1

公开(公告)日：2020-05-06

申请号：EP14861163.5

申请日：2014-11-05

申请人： BOE Technology Group Co., Ltd.

发明人： CUI, Ying ,  SONG, Yingying ,  LIU, Ze

IPC分类号： H01L31/0272 ,  G03F7/00 ,  G03F7/004 ,  G03F7/105

公开(公告)号：EP3553837A1

公开(公告)日：2019-10-16

申请号：EP17901260.4

申请日：2017-12-20

申请人： LG Chem, Ltd.

发明人： KO, Kyung Moon ,  PARK, Cheol Hee ,  KIM, Min Kyoung ,  PARK, Chee Sung ,  JUNG, Myung Jin ,  MIN, Yu Ho

IPC分类号： H01L35/12 ,  H01L35/18 ,  H01L35/16 ,  H01L35/34 ,  H01L31/0272 ,  C01G51/00

摘要： The present invention relates to a novel compound semiconductor which has an improved thermoelectric performance index together with excellent electrical conductivity, and thus may be utilized for various purposes such as a thermoelectric conversion material of thermoelectric conversion devices, solar cells, and the like, and to a method for preparing the same.

公开(公告)号：EP3454387A1

公开(公告)日：2019-03-13

申请号：EP18763294.8

申请日：2018-02-12

申请人： LG Chem, Ltd.

发明人： KO, Kyung Moon ,  PARK, Cheol Hee ,  KIM, Min Kyoung ,  JUNG, Myung Jin ,  PARK, Chee Sung

IPC分类号： H01L35/16 ,  C01G51/00 ,  H01L35/34 ,  H01L31/0272

摘要： The present invention relates to novel compound semiconductor that can be used for a solar battery, a thermoelectric material, etc., and use thereof.

公开(公告)号：EP1017109B1

公开(公告)日：2012-12-19

申请号：EP99307955.7

申请日：1999-10-08

申请人： National Institute of Advanced Industrial Science and Technology, Independent Administrative Institution

发明人： Niki, Shigeru ,  Yamada, Akimasa ,  Fons, Paul ,  Oyanagi, Hiroyuki

IPC分类号： H01L31/00 ,  H01L31/032 ,  H01L31/0336 ,  H01L31/0272

CPC分类号： H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

公开(公告)号：EP2257990A4

公开(公告)日：2012-02-15

申请号：EP09708215

申请日：2009-02-06

申请人： INDIGO SOLAR INC

发明人： DUNKLEY JOHN

IPC分类号： H01L51/42 ,  H01L31/0264 ,  H01L31/0272 ,  H01L31/04 ,  H01L31/18 ,  H01L51/00

CPC分类号： H01M14/005 ,  F28F1/26 ,  F28F9/013 ,  F28F9/26 ,  H01L31/022425 ,  H01L51/0004 ,  H01L51/426 ,  Y02E10/549 ,  Y02P70/521

公开(公告)号：EP2348540A3

公开(公告)日：2011-11-09

申请号：EP10184761.4

申请日：2005-09-06

申请人： Nanosolar Inc.

发明人： Leidholm, Craig R. ,  Bollman, Brent

IPC分类号： H01L31/0264 ,  H01L31/0272 ,  H01L31/04

CPC分类号： H01L31/0322 ,  H01L31/03928 ,  H01L31/1864 ,  Y02E10/541 ,  Y02P70/521

摘要： A method for forming an absorber layer of a photovoltaic device comprises forming a nascent absorber layer on a metal foil substrate; and using a roll-to-roll system to transport the substrate through a furnace. The nascent absorber layer and/or substrate is heated in the furnace and in an H 2 Se gas, H 2 S gas, or group VIA vapor without destroying the aluminum foil substrate.