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    A METHOD OF MANUFACTURING A THERMOELECTRIC LEG
    1.
    发明公开
    A METHOD OF MANUFACTURING A THERMOELECTRIC LEG 审中-公开

    公开(公告)号：EP3852157A3

    公开(公告)日：2021-07-28

    申请号：EP21161352.6

    申请日：2017-06-01

    申请人： LG INNOTEK CO. LTD

    发明人： TOSHO, Tsuyoshi

    IPC分类号： H01L35/02 ,  H01L35/32 ,  H01L35/12 ,  H01L35/16 ,  H01L35/18 ,  H01L35/34

    摘要： According to one embodiment of the present invention, a method of manufacturing a thermoelectric leg comprises: preparing a first metal substrate including a first metal, forming a first plated layer including a second metal on the first metal substrate, disposing a layer including tellurium (Te) on the first plated layer, forming a portion of the first plated layer as a first bonding layer by reacting the second metal and the Te, disposing a thermoelectric material layer including bismuth (Bi) and Te on an upper surface of the first bonding layer, disposing a second metal substrate, on which a second bonding layer and a second plated layer are formed, on the thermoelectric material layer, and sintering.

    THERMOELECTRIC LEG AND THERMOELECTRIC ELEMENT COMPRISING SAME
    2.
    发明公开
    THERMOELECTRIC LEG AND THERMOELECTRIC ELEMENT COMPRISING SAME 审中-公开

    公开(公告)号：EP3467888A1

    公开(公告)日：2019-04-10

    申请号：EP17807042.1

    申请日：2017-06-01

    申请人： LG Innotek Co., Ltd.

    发明人： TOSHO, Tsuyoshi

    IPC分类号： H01L35/02 ,  H01L35/32 ,  H01L35/12 ,  H01L35/16 ,  H01L35/18 ,  H01L35/34

    摘要： According to one embodiment of the present invention, a thermoelectric leg comprises: a thermoelectric material layer comprising Bi and Te; a first metal layer and a second metal layer respectively arranged on one surface of the thermoelectric material layer and on a surface different from the one surface; a first adhesive layer arranged between the thermoelectric material layer and the first metal layer and comprising the Te, and a second adhesive layer arranged between the thermoelectric material layer and the second metal layer and comprising the Te; and a first plating layer arranged between the first metal layer and the first adhesive layer, and a second plating layer arranged between the second metal layer and the second adhesive layer, wherein the thermoelectric material layer is arranged between the first metal layer and the second metal layer, the amount of the Te is higher than the amount of the Bi from the centerline of the thermoelectric material layer to the interface between the thermoelectric material layer and the first adhesive layer, and the amount of the Te is higher than the amount of the Bi from the centerline of the thermoelectric material layer to the interface between the thermoelectric material layer and the second adhesive layer.

    NANOSTRUCTURED BULK THERMOELECTRIC MATERIAL
    5.
    发明公开
    NANOSTRUCTURED BULK THERMOELECTRIC MATERIAL 有权
    纳米结构的保温电器阀体材料

    公开(公告)号：EP1820224A2

    公开(公告)日：2007-08-22

    申请号：EP05817061.4

    申请日：2005-10-18

    申请人： Toyota Technical Center, U.S.A., Inc. ,  The Administrators of the Tulane Educational Fund

    发明人： ZHANG, Minjuan ,  LU, Yunfeng

    IPC分类号： H01L35/12 ,  H01L35/16

    CPC分类号： H01L35/34 ,  C02F1/02 ,  C02F2103/02 ,  H01L35/16 ,  H01L35/26

    摘要： A thermoelectric material comprises two or more components, at least one of which is a thermoelectric material. The first component is nanostructured, for example as an electrically conducting nanostructured network, and can include nanowires, nanoparticles, or other nanostructures of the first component. The second component may comprise an electrical insulator, such as an inorganic oxide, other electrical insulator, other low thermal conductivity material, voids, air-filled gaps, and the like. Additional components may be included, for example to improve mechanical properties. Quantum size effects within the nanostructured first component can advantageously modify the thermoelectric properties of the first component. In other examples, the second component may be a thermoelectric material, and additional components may be included.

    FUEL FLEXIBLE THERMOELECTRIC MICRO-GENERATOR
    6.
    发明公开
    FUEL FLEXIBLE THERMOELECTRIC MICRO-GENERATOR 审中-公开
    弹性燃料电子热MICRO发生器

    公开(公告)号：EP1790019A1

    公开(公告)日：2007-05-30

    申请号：EP05778443.1

    申请日：2005-08-01

    申请人： Harris Corporation

    发明人： SMITH, Sinjin, C. W. ,  NEWTON, Charles, M. ,  GASSMAN, Richard

    IPC分类号： H01L35/00 ,  H01L35/12 ,  H01L35/28 ,  H01L35/30

    CPC分类号： H01L35/30

    摘要： A micro-generator for providing electrical energy to portable electronic devices and MEMS includes a micro­-combustor and a thermoelectric module consisting of a number of quantum well thermoelectric panels connected between spaced heat spreaders, one of which is mounted in thermal communication with the micro-combustor. Different types of hydrocarbon fuel may be supplied to the micro-combustor where it is burned within a combustion chamber. The entire system is controlled in real time by a micro-controller which is powered upon start up by an ultra capacitor and thereafter by electrical energy output from the thermoelectric module.

    FABRICATION OF STABLE ELECTRODE/DIFFUSION BARRIER LAYERS FOR THERMOELECTRIC FILLED SKUTTERUDITE DEVICES
    9.
    发明公开
    FABRICATION OF STABLE ELECTRODE/DIFFUSION BARRIER LAYERS FOR THERMOELECTRIC FILLED SKUTTERUDITE DEVICES 有权
    HERSTELLUNG VON STABILEN ELEKTRODEN- / DIFFUSIONSBARRIERESCHICHTENFÜRTHERMOELEKTRISCHEGEFÜLLTESKUTTERUDITVORRICHTUNGEN

    公开(公告)号：EP3011609A1

    公开(公告)日：2016-04-27

    申请号：EP14814268.0

    申请日：2014-06-20

    申请人： University of Houston System ,  Massachusetts Institute of Technology

    发明人： JIE, Qing ,  REN, Zhifeng ,  CHEN, Gang

    IPC分类号： H01L35/12 ,  H01L35/34

    摘要： Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 μ&OHgr;·cm2.

    摘要翻译： 公开了用于制造电接触的n型和p型填充方钴矿热电腿的方法。 将CoSi 2和掺杂剂的第一材料球磨以形成第一粉末，其用n型方钴矿的第二粉末热机械加工以形成设置在第一层和第三层之间的n型方钴矿层 掺杂CoSi2。 此外，将多种组分如铁和镍以及至少一种钴或铬球磨成形成第一种粉末，其用p型方钴矿层热机械加工以形成p型方钴矿 层“第二层”设置在第一和第三层之间。 在热压之后的n型和p型方钴矿的第一层和方钴矿层之间的具体接触电阻小于约10.0μΩ·cmgr·cm 2。