ROM protection scheme
    41.
    发明公开
    ROM protection scheme 失效
    ROM保护方案

    公开(公告)号:EP0162707A3

    公开(公告)日:1987-10-07

    申请号:EP85303591

    申请日:1985-05-21

    发明人: Bauer, Jerry R.

    IPC分类号: G06F12/14

    摘要: In order to protect, from unauthorised copying, computer code placed in internal circuitry in a computer, an encoding Exclusive-OR gate (23) is provided in the computer for each data transmission lead (8) from the respective circuitry. One input lead of each encoding Exclusive-OR gate is connected to the corresponding incoming data transmission lead (7) in order to receive data to be transmitted on accessible data lines. The other input lead of each encoding Exclusive-OR gate is connected via a code matrix (22) to a source (11) of a random M-bit binary number. The output signal provided by each Exclusive-OR gate (23) is the encoded data bit which Is applied to one of the accessible data lines (8). The encoded data is decoded by a circuit similar to the encoding circuit. In the decoding circuit a decoding Exclusive-OR gate (33) is provided for each data transmission lead (9). One input lead of each decoding Exclusive-OR gate (33) is connected to an incoming encoded data transmission lead (8). The other input lead to the decoding Exclusive-OR gate (33) is connected via a code matrix (32) which is similar to the code matrix (22) provided in the encoding circuit, to a source (II) of a random M-bit binary number, where the M-bit binary number is the same M-bit binary number provided in the encoding circuit. The output leads of the decoding Exclusive-OR gates (9) are the transmission lines which carry the decoded data. The encoding matrix (22, 32) and the random M-bit word are the same in the encoding and decoding circuit, so the data on the output leads of the Exclusive-OR gates is properly decoded. However, the data on bus lines running between integrated circuits, and which therefore may be intercepted through the use of logic probes, is in encoded form, thereby. substantially increasing the effort required to illicitly determine the data stored.

    Temperature compensated complementary metal-insulator-semiconductor oscillator
    42.
    发明公开
    Temperature compensated complementary metal-insulator-semiconductor oscillator 失效
    温度补偿的CMOS振荡器。

    公开(公告)号:EP0219994A2

    公开(公告)日:1987-04-29

    申请号:EP86307481.1

    申请日:1986-09-30

    IPC分类号: G05F3/24

    摘要: A temperature compensated complementary metal-insulator-semiconductor oscillator receives a temperature independent reference voltage from an external source. The temperature independent reference voltage is attenuated and summed with a threshold voltage in order to bias a gate electrode of MOSFET. A bipolar p-n junction diode is connected to the MOSFET at a source electrode in order to bias the MOSFET with a temperature dependent forward voltage drop to compensate for temperature variations therein. The MOSFET controls a temperature independent current. A current mirror assembly receives the current and controls a Schmitt trigger oscillator. The Schmitt trigger oscillator generates a signal having a temperature independent constant period.

    Multiplier circuitry using pass transistors and method of constructing same
    44.
    发明公开
    Multiplier circuitry using pass transistors and method of constructing same 失效
    Multipliziererschaltung mit Passiertransistoren und Konstruktionsverfahren derselben。

    公开(公告)号:EP0179568A1

    公开(公告)日:1986-04-30

    申请号:EP85306733.8

    申请日:1985-09-23

    IPC分类号: G06F7/52

    CPC分类号: G06F7/5306 G06F2207/4816

    摘要: PASS transistors are used to reduce the layout complexity of multiplication circuitry by using PASS transistors connected to pass a first and second input function to an output node in response to a selected output function on the output node. The PASS transistor comprises a transistor capable of passing an input function in response to a CONTROL signal applied to the transistor, thereby to generate an output function related to the input function.

    摘要翻译: PASS晶体管用于通过使用连接的PASS晶体管来响应于输出节点上的所选择的输出功能而将第一和第二输入功能传递到输出节点来降低乘法电路的布局复杂性。 PASS晶体管包括能够响应于施加到晶体管的CONTROL信号而传递输入功能的晶体管,从而产生与输入功能相关的输出功能。

    A frequency doubler
    45.
    发明公开
    A frequency doubler 失效
    Frequenzverdoppler。

    公开(公告)号:EP0155041A2

    公开(公告)日:1985-09-18

    申请号:EP85200265.8

    申请日:1985-02-27

    发明人: Haque, Yusuf A.

    IPC分类号: H03K5/00

    CPC分类号: H03K5/00006 H03K5/1565

    摘要: A unique frequency doubler circuit is utilized which requires only a handful of standard components such as operational amplifier, logic gates, resistors, capacitors and switches. In contrast to certain prior art frequency doublers, frequency doublers constructed in accordance with the teachings of this invention do not require the use of a phase lock loop, thereby resulting in a substantial simplification of circuit construction. Furthermore, frequency doublers constructed in accordance with this invention utilize a feedback technique which assures that the duty cycle of the output signal will be 50 %, or any other predefined value.

    Carrier detection circuit
    46.
    发明公开
    Carrier detection circuit 失效
    载波检测电路。

    公开(公告)号:EP0145101A2

    公开(公告)日:1985-06-19

    申请号:EP84201817.8

    申请日:1984-12-06

    发明人: Haque, Yusuf A.

    IPC分类号: H04L27/14

    CPC分类号: H04L27/1563 H04L1/206

    摘要: A carrier detection circuit includes a rectification stage, an integrator, a comparator, and a digital counter. By utilizing a digital counter, long time constants are provided without the use of external components. If desired, a mark detect circuit is used when a mark must be present to signify the presence of carrier. Hystersis is provided by the comparator to insure that slight fluctuations in the carrier level do not affect the comparison.

    Gain amplifier
    47.
    发明公开
    Gain amplifier 失效
    控制放大器。

    公开(公告)号:EP0138260A2

    公开(公告)日:1985-04-24

    申请号:EP84201369.0

    申请日:1984-09-25

    IPC分类号: H03G1/00 H03G1/04 H03F3/00

    CPC分类号: H03F1/303 H03G1/04

    摘要: A novel switched capacitor gain stage uses a unique circuit design and clocking technique that reduces the component mismatch offset voltage and the clock-induced feedthrough offset voltage produced by the circuit. The totalcapac- itance ratio between the input capacitors and the feedback capacitor necessary to achieve a desired total gain is also minimized.

    Semiconductor memory devices and methods for making the same
    49.
    发明公开
    Semiconductor memory devices and methods for making the same 失效
    半导体存储器件及其制造方法

    公开(公告)号:EP0109853A2

    公开(公告)日:1984-05-30

    申请号:EP83307114.5

    申请日:1983-11-21

    IPC分类号: H01L27/10 H01L29/60

    CPC分类号: H01L27/112 H01L27/115

    摘要: An array of MOS transistors (30) formed in a semiconductor substrate having a plurality of continuous diffused lines (bit lines) (7-3, 7-4, 7-5 and 7-6) serving as the source and drain regions of a plurality of MOS transistors. A plurality of conductive word lines (33, 133) are formed over the plurality of diffused lines, crossing the diffused lines at substantially right angles, with each conductive word line serving as the gates of a plurality of MOS transistors. Each transistor of the memory array is formed in a region containing two continuous diffused lines and a single word line. A single electrical contact (36-3, 4, 5, 6) to a bit line is formed for each such diffused line.

    摘要翻译: 在具有多个连续扩散线(位线)(7-3,7-4,7-5和7-6)的半导体衬底中形成的MOS晶体管(30)的阵列(7-3,7-4,7-5和7-6)用作a 多个MOS晶体管。 多条导电字线(33,133)形成在多条扩散线上,以基本上直角与扩散线交叉,每条导电字线用作多个MOS晶体管的栅极。 存储器阵列的每个晶体管形成在包含两条连续扩散线和单条字线的区域中。 对于每条这样的扩散线形成到位线的单个电触点(36-3,4,5,6)。

    High voltage circuits in low voltage CMOS process
    50.
    发明公开
    High voltage circuits in low voltage CMOS process 无效
    电路,用于放大电压到低电压的处理的CMOS晶体管。

    公开(公告)号:EP0094143A1

    公开(公告)日:1983-11-16

    申请号:EP83301231.3

    申请日:1983-03-08

    IPC分类号: H03K17/10 H03F3/42

    摘要: A CMOS push-pull output buffer (171) ist constructed with a plurality of N channel transistors (74, 75, 76) and a plurality of P channel transistors (71, 72, 73) connected in series. The voltages applied to the gates of the N channel transistors and P channel transistors are selected to divide the high voltage (+V) substantially equally across the P channel transistors when the P channel transistors are turned off, and substantially evenly divide the high voltage across the N channel transistors when the N channel transistors are turned off.
    In another embodiment, selected ones of the N channel and P channel transistors are formed to have a high drain to bulk breakdown voltage.
    In another embodiment, a plurality of N channel and a plurality of P channel transistors are connected in series and driven by a single ended control voltage, thus providing a first stage which drives a second stage having a plurality of P channel transistors and a plurality of N channel transistors which provide the high voltage output voltage.
    In another embodiment, the first stage is driven by a single-ended control voltage and serves to drive a second stage comprising a plurality of N channel transistors and a plurality of bipolar transistors, whereby said second stage provides the high voltage output signal.