摘要:
In order to protect, from unauthorised copying, computer code placed in internal circuitry in a computer, an encoding Exclusive-OR gate (23) is provided in the computer for each data transmission lead (8) from the respective circuitry. One input lead of each encoding Exclusive-OR gate is connected to the corresponding incoming data transmission lead (7) in order to receive data to be transmitted on accessible data lines. The other input lead of each encoding Exclusive-OR gate is connected via a code matrix (22) to a source (11) of a random M-bit binary number. The output signal provided by each Exclusive-OR gate (23) is the encoded data bit which Is applied to one of the accessible data lines (8). The encoded data is decoded by a circuit similar to the encoding circuit. In the decoding circuit a decoding Exclusive-OR gate (33) is provided for each data transmission lead (9). One input lead of each decoding Exclusive-OR gate (33) is connected to an incoming encoded data transmission lead (8). The other input lead to the decoding Exclusive-OR gate (33) is connected via a code matrix (32) which is similar to the code matrix (22) provided in the encoding circuit, to a source (II) of a random M-bit binary number, where the M-bit binary number is the same M-bit binary number provided in the encoding circuit. The output leads of the decoding Exclusive-OR gates (9) are the transmission lines which carry the decoded data. The encoding matrix (22, 32) and the random M-bit word are the same in the encoding and decoding circuit, so the data on the output leads of the Exclusive-OR gates is properly decoded. However, the data on bus lines running between integrated circuits, and which therefore may be intercepted through the use of logic probes, is in encoded form, thereby. substantially increasing the effort required to illicitly determine the data stored.
摘要:
A temperature compensated complementary metal-insulator-semiconductor oscillator receives a temperature independent reference voltage from an external source. The temperature independent reference voltage is attenuated and summed with a threshold voltage in order to bias a gate electrode of MOSFET. A bipolar p-n junction diode is connected to the MOSFET at a source electrode in order to bias the MOSFET with a temperature dependent forward voltage drop to compensate for temperature variations therein. The MOSFET controls a temperature independent current. A current mirror assembly receives the current and controls a Schmitt trigger oscillator. The Schmitt trigger oscillator generates a signal having a temperature independent constant period.
摘要:
A programmable package for integrated circuits includes a ground plane, a power plane and a plurality of electrically isolated but conductive fingers and a multiplicity ofterminals on the exterior of the package. A selected number of fingers handling selected I/O signals are connected directly to the multiplicity of terminals on the package exterior. Additional fingers are available within the package connected to a ground plane or to a power plane or to an I/0 plane. The result is a package in which the particular terminals connected to external power and ground and handling I/O signals can be programmed in accordance with the needs of the circuit and the arrangement of the bonding pads on the die.
摘要:
PASS transistors are used to reduce the layout complexity of multiplication circuitry by using PASS transistors connected to pass a first and second input function to an output node in response to a selected output function on the output node. The PASS transistor comprises a transistor capable of passing an input function in response to a CONTROL signal applied to the transistor, thereby to generate an output function related to the input function.
摘要:
A unique frequency doubler circuit is utilized which requires only a handful of standard components such as operational amplifier, logic gates, resistors, capacitors and switches. In contrast to certain prior art frequency doublers, frequency doublers constructed in accordance with the teachings of this invention do not require the use of a phase lock loop, thereby resulting in a substantial simplification of circuit construction. Furthermore, frequency doublers constructed in accordance with this invention utilize a feedback technique which assures that the duty cycle of the output signal will be 50 %, or any other predefined value.
摘要:
A carrier detection circuit includes a rectification stage, an integrator, a comparator, and a digital counter. By utilizing a digital counter, long time constants are provided without the use of external components. If desired, a mark detect circuit is used when a mark must be present to signify the presence of carrier. Hystersis is provided by the comparator to insure that slight fluctuations in the carrier level do not affect the comparison.
摘要:
A novel switched capacitor gain stage uses a unique circuit design and clocking technique that reduces the component mismatch offset voltage and the clock-induced feedthrough offset voltage produced by the circuit. The totalcapac- itance ratio between the input capacitors and the feedback capacitor necessary to achieve a desired total gain is also minimized.
摘要:
An array of MOS transistors (30) formed in a semiconductor substrate having a plurality of continuous diffused lines (bit lines) (7-3, 7-4, 7-5 and 7-6) serving as the source and drain regions of a plurality of MOS transistors. A plurality of conductive word lines (33, 133) are formed over the plurality of diffused lines, crossing the diffused lines at substantially right angles, with each conductive word line serving as the gates of a plurality of MOS transistors. Each transistor of the memory array is formed in a region containing two continuous diffused lines and a single word line. A single electrical contact (36-3, 4, 5, 6) to a bit line is formed for each such diffused line.
摘要:
A CMOS push-pull output buffer (171) ist constructed with a plurality of N channel transistors (74, 75, 76) and a plurality of P channel transistors (71, 72, 73) connected in series. The voltages applied to the gates of the N channel transistors and P channel transistors are selected to divide the high voltage (+V) substantially equally across the P channel transistors when the P channel transistors are turned off, and substantially evenly divide the high voltage across the N channel transistors when the N channel transistors are turned off. In another embodiment, selected ones of the N channel and P channel transistors are formed to have a high drain to bulk breakdown voltage. In another embodiment, a plurality of N channel and a plurality of P channel transistors are connected in series and driven by a single ended control voltage, thus providing a first stage which drives a second stage having a plurality of P channel transistors and a plurality of N channel transistors which provide the high voltage output voltage. In another embodiment, the first stage is driven by a single-ended control voltage and serves to drive a second stage comprising a plurality of N channel transistors and a plurality of bipolar transistors, whereby said second stage provides the high voltage output signal.