公开(公告)号：EP3476536B1

公开(公告)日：2022-12-28

申请号：EP18202150.1

申请日：2018-10-23

发明人： KOBAYASHI, Kenichi ,  NAKANISHI, Masayuki ,  KASHIWAGI, Makoto ,  HOSHINA, Manao

IPC分类号： B24B7/22 ,  B24B37/10 ,  B24B37/30 ,  B24B21/00 ,  B24B21/10 ,  B24B21/08 ,  B24B41/06 ,  H01L21/687

公开(公告)号：EP3187304B1

公开(公告)日：2022-12-21

申请号：EP16207175.7

申请日：2012-03-20

发明人： SURATWALA, Tayyab I. ,  STEELE, William A. ,  FEIT, Michael D. ,  DESJARDIN, Richard P. ,  MASON, Daniel C. ,  DYLLA-SPEARS, Rebecca J. ,  WONG, Lana L. ,  MILLER, Philip E. ,  GERAGHTY, Paul ,  BUDE, Jeffrey D.

IPC分类号： B24B37/04 ,  B24B37/10 ,  B24B37/34 ,  B24B57/02 ,  B24B13/005

公开(公告)号：EP4099364A1

公开(公告)日：2022-12-07

申请号：EP22172909.8

申请日：2022-05-12

申请人： DENSO CORPORATION

发明人： AOKI, Kazufumi ,  MARUNO, Naoki ,  SOLTANI, Bahman ,  KATO, Yuya ,  KOTAKE, Kyohei ,  MUKOTA, Shinji ,  TOMISAKA, Manabu ,  ISHIHARA, Yasuo ,  NAKAZAWA, Shusaku ,  YAMAGUCHI, Tetsuji

IPC分类号： H01L21/02 ,  H01L21/67 ,  B24B37/04

摘要： Provided is a surface processing apparatus and a surface processing method for a SiC substrate using anodization. The surface processing apparatus (1) for the SiC substrate (W) includes a surface processing pad (3) and a power supply device (5). The surface processing pad (32) includes a grinding wheel layer. The grinding wheel layer is disposed facing a workpiece surface(W1) of the SiC substrate. The power supply device passes a pulsed current having a period greater than 0.01 seconds and less than or equal to 20 seconds for anodizing the workpiece surface to be processed by the grinding wheel layer through the SiC substrate as an anode in the presence of an electrolyte (S).

公开(公告)号：EP4094889A1

公开(公告)日：2022-11-30

申请号：EP22175094.6

申请日：2022-05-24

申请人： DENSO CORPORATION ,  OSAKA UNIVERSITY

发明人： AOKI, Kazufumi ,  MARUNO, Naoki ,  SOLTANI, Bahman ,  KATO, Yuya ,  YAMAMURA, Kazuya ,  YANG, Xu

IPC分类号： B24B37/04 ,  H01L21/304 ,  H01L21/321 ,  C25F3/30

摘要： A surface processing method for a SiC substrate includes the following processes or steps: anodizing a workpiece surface (W1) of the SiC substrate by passing a current having a current density of 15 mA/cm 2 or more through the SiC substrate as an anode in the presence of an electrolyte (S); disposing a grinding wheel layer (32) of a surface processing pad (3) to the workpiece surface and selectively removing, with the grinding wheel layer, an oxide formed on the workpiece surface through anodization; and performing, simultaneously or sequentially, the anodization of the workpiece surface and the selective removal of the oxide formed on the workpiece surface with the grinding wheel layer.

公开(公告)号：EP3863798B1

公开(公告)日：2022-11-16

申请号：EP19783330.4

申请日：2019-10-10

发明人： SIMONSEN, Lars, Schantz

IPC分类号： B24B37/08 ,  B24B7/17

公开(公告)号：EP4084929A1

公开(公告)日：2022-11-09

申请号：EP20889571.4

申请日：2020-11-19

申请人： Best Engineered Surface Technologies, LLC

发明人： SLUTZ, David, Earl

IPC分类号： B24B37/04

公开(公告)号：EP4083152A1

公开(公告)日：2022-11-02

申请号：EP20905421.2

申请日：2020-11-19

申请人： NITTA DuPont Incorporated

发明人： YAMASAKI, Tomoki

IPC分类号： C09G1/02 ,  C09K3/14 ,  B24B37/00 ,  H01L21/304

摘要： A polishing composition includes: an abrasive; a load reducer; a water-soluble polymer; a basic compound; and water. The following expression is satisfied: A × B / C 2.8 , where A is the contact angle of a 0.1 mass % aqueous solution of the load reducer relative to the surface of a glass epoxy resin plate with a surface roughness Ra of 3.0 nm, B is the surface tension of a 0.1 mass % aqueous solution of the load reducer, and C is the molecular weight of the load reducer.

公开(公告)号：EP3420579B1

公开(公告)日：2022-10-19

申请号：EP16891844.9

申请日：2016-02-26

发明人： HU, Yongqi ,  NARENDRNATH, Kadthala Ramaya ,  TERRY, Thomas Lawrence

IPC分类号： B24B37/20 ,  B24B37/22

公开(公告)号：EP2977423B1

公开(公告)日：2022-09-28

申请号：EP14767647.2

申请日：2014-03-14

发明人： TSUCHIYA, Kohsuke ,  TANSHO, Hisanori ,  ICHITSUBO, Taiki

IPC分类号： C09K3/14 ,  B24B37/00 ,  C09G1/02 ,  H01L21/304 ,  H01L21/02

公开(公告)号：EP3302877B1

公开(公告)日：2022-08-10

申请号：EP16804163.0

申请日：2016-05-27

发明人： REEDY, Steven Mark ,  YAVELBERG, Simon ,  OH, Jeonghoon ,  ZUNIGA, Steven M. ,  NAGENGAST, Andrew J. ,  HSU, Samuel Chu-Chiang ,  DANDAVATE, Gautam Shashank

IPC分类号： B24B37/32 ,  H01L21/687