公开(公告)号：EP2697837A2

公开(公告)日：2014-02-19

申请号：EP12861832.9

申请日：2012-04-05

申请人： Cree, Inc.

发明人： VAN DE VEN, Antony, Paul ,  NEGLEY, Gerald, H. ,  LETOQUIN, Ronan, P ,  KELLER, Bernd, P. ,  IBBETSON, James

IPC分类号： H01L33/50 ,  H01L33/48

CPC分类号： H01J1/63 ,  H01L25/0753 ,  H01L33/50 ,  H01L2924/0002 ,  H05B33/0857 ,  H01L2924/00

摘要： A green-shifted red solid state lighting device includes at least one green solid state light emitter arranged to stimulate emissions from at least one red lumiphor, arranged in combination with at least one blue solid state light emitter. Such device may be devoid of any yellow lumiphor arranged to be stimulated by a blue solid state light emitter. A green shifted red plus blue (GSR+B) lighting device exhibits reduced Stokes Shift losses as compared to a blue shifted yellow plus red (BSY+R) lighting device, with comparable color rendering performance and similar efficiency, enhanced color stability over a range of operating temperatures, and enhanced color rendering performance at higher correlated color temperatures. Additional solid state emitters and/or lumiphors may be provided.

公开(公告)号：EP2430673A1

公开(公告)日：2012-03-21

申请号：EP10705732.5

申请日：2010-02-23

申请人： Cree, Inc.

发明人： DONOFRIO, Matthew ,  IBBETSON, James ,  YAO, Zhinmin Jamie

IPC分类号： H01L33/40 ,  H01L33/46 ,  H01L33/20 ,  H01L33/42 ,  H01L33/22

摘要： Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode contact and/or the cathode contact may further provide a hybrid reflective structure on the first face that is configured to reflect substantially all light that emerges from the first face back into the first face. Related fabrication methods are also described.

公开(公告)号：EP1234343B1

公开(公告)日：2010-11-17

申请号：EP00979221.9

申请日：2000-11-22

申请人： CREE, INC.

发明人： TARSA, Eric, J. ,  THIBEAULT, Brian ,  IBBETSON, James ,  MACK, Michael

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/14 ,  H01L33/20 ,  H01L33/64

摘要： An LED with improved current spreading structures that provide enhanced current injection into the LED's active layer (14), improving its power and luminous flux. The current spreading structures can be used in LEDs larger than conventional LEDs while maintaining the enhanced current injection. The invention is particularly applicable to LEDs having insulating substrates (12) but can also reduce the series resistance of LEDs having conductive substrates. The improved structures comprise conductive fingers (20a, 20b, 22) that form cooperating conductive paths that ensure that current spreads from the contacts (19, 21), into the fingers (20a, 20b, 22) and uniformly spreads through the oppositely doped layers (15, 16). The current then spreads to the active layer (14) to uniformly inject electrons and holes throughout the active layer (14), which recombine to emit light.

公开(公告)号：EP1730794A2

公开(公告)日：2006-12-13

申请号：EP05730896.7

申请日：2005-03-24

申请人： CREE, INC.

发明人： ANDREWS, Peter S. ,  COLEMAN, Thomas G. ,  IBBETSON, James ,  LEUNG, Michael ,  NEGLEY, Gerald H. ,  TARSA, Eric

IPC分类号： H01L33/00

CPC分类号： H01L33/58 ,  H01L33/52

摘要： Methods of packaging a semiconductor light emitting device in a reflector having a moat positioned between a lower and an upper sidewall thereof, the upper and lower sidewall defining a reflective cavity, include dispensing encapsulant material into the reflective cavity including the light emitting device therein to cover the light emitting device and to form a convex meniscus of encapsulant material in the reflective cavity extending from an edge of the moat without contacting the upper sidewall of the reflector. The encapsulant material in the reflective cavity is cured. Packaged semiconductor light emitting devices and reflectors for the same are also provided.

公开(公告)号：EP1668710A1

公开(公告)日：2006-06-14

申请号：EP04788908.4

申请日：2004-09-21

申请人： CREE, INC.

发明人： LI, Ting ,  IBBETSON, James ,  KELLER, Bernd

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L21/3063 ,  H01L31/0236 ,  H01L33/16 ,  H01L2224/16245 ,  H01L2924/10158

摘要： A method and apparatus for forming a porous layer on the surface of a semiconductor material wherein an electrolyte is provided and is placed in contact with one or more surfaces of a layer of semiconductor material. The electrolyte is heated and a bias is introduced across said electrolyte and the semiconductor material causing current to flow between the electrolyte and the semiconductor material. The current forms a porous layer on the one or more surfaces of the semiconductor material in contact with the electrolyte. The semiconductor material with its porous layer can serve as a substrate for a light emitter. A semiconductor emission region can be formed on the substrate. The emission region is capable of emitting light omnidirectionally in response to a bias, with the porous layer enhancing extraction of the emitting region light passing through the substrate.

公开(公告)号：EP1382073A2

公开(公告)日：2004-01-21

申请号：EP02713514.4

申请日：2002-02-01

申请人： CREE, INC.

发明人： SLATER, David, B., Jr. ,  GLASS, Robert, C. ,  SWOBODA, Charles, M. ,  KELLER, Bernd ,  IBBETSON, James ,  THIBEAULT, Brian ,  TARSA, Eric, J.

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/10 ,  H01L33/405 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32014 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

摘要： Light emitting diodes include a substrate having first and second opposing faces and that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in cross-section, a plurality of pedestals that extend into the substrate from the first face towards the second face. A diode region on the second face is configured to emit light in the predetermined wavelength range, into the substrate upon application of voltage across the diode region. A mounting support on the diode region, opposite the substrate is configured to support the diode region, such that the light that is emitted from the diode region into the substrate, is emitted from the first face upon application of voltage across the diode region. The first face of the substrate may include therein a plurality of grooves that define the plurality of triangular pedestals in the substrate. The grooves may include tapered sidewalls and/or a beveled floor. The first face of the substrate also may include therein an array of via holes. The via holes may include tapered sidewalls and/or a floor.