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51.发明公开Using antibody - antigen interaction for formation of a patterened metal film 审中-公开Verwendung derAntikörper - Antigen Wechselwirkung zur Herstellung eines Metallfilmmusters
公开(公告)号：EP0926260A2
公开(公告)日：1999-06-30
申请号：EP98123279.6
申请日：1998-12-07
发明人： Morita, Kiyoyuki , Morimoto, Kiyoshi , Araki, Kiyoshi , Yuki, Koichiro , Adachi, Kazuyasu , Endo, Masayuki , Yamashita, Ichiro
IPC分类号： C23C18/00 , H01L21/28 , H01L21/288
CPC分类号： G11C13/0014 , B82Y10/00 , G11C11/5664 , G11C11/5671 , G11C13/0019 , G11C2216/08 , H01L21/28273 , H01L21/288 , H01L21/768 , H01L29/7883 , Y10S438/962
摘要： A Rat IgG antibody film, formed on a p-type Si substrate, is selectively irradiated with ultraviolet rays, thereby leaving part of the Rat IgG antibody film, except for a region deactivated with the ultraviolet rays. Next, when the p-type Si substrate is immersed in a solution containing Au fine particles that have been combined with a Rat IgG antigen, the Rat IgG antigen is selectively combined with the Rat IgG antibody film. As a result, Au fine particles, combined with the Rat IgG antigen, are fixed on the Rat IgG antibody film. Thereafter, the p-type Si substrate is placed within oxygen plasma for 20 minutes, thereby removing the Rat IgG antibody film, the deactivated Rat IgG antibody film and the Rat IgG antigen. Consequently, dot elements can be formed at desired positions on the p-type Si substrate. If these dot elements are used for the floating gate of a semiconductor memory device, then the device has a structure suitable for miniaturization.
摘要翻译： 在p型Si衬底上形成的大鼠IgG抗体膜被紫外线选择性照射，除了用紫外线去活化的区域外，还剩下部分大鼠IgG抗体膜。 接下来，当将p型Si衬底浸入含有与大鼠IgG抗原组合的Au微粒的溶液中时，将大鼠IgG抗原与大鼠IgG抗体膜选择性组合。 结果，与大鼠IgG抗原组合的Au微粒固定在大鼠IgG抗体膜上。 此后，将p型Si衬底置于氧等离子体中20分钟，从而除去大鼠IgG抗体膜，失活的大鼠IgG抗体膜和大鼠IgG抗原。 因此，可以在p型Si衬底上的期望位置形成点元素。 如果这些点元件用于半导体存储器件的浮动栅极，则该器件具有适于小型化的结构。
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公开(公告)号：EP0883163A3
公开(公告)日：1998-12-23
申请号：EP98112004.1
申请日：1995-06-30
IPC分类号： H01L21/027 , G03F7/26
CPC分类号： G03F7/322 , G03F7/265 , G03F7/32 , H01L21/0271 , H01L21/0274 , H01L21/0275 , H01L21/0337
摘要： A resist film is formed on a semiconductor substrate by using a chemical amplification resist which generates a base in response to the radiation of KrF excimer laser light and which reacts with the base. If the resist film is irradiated with the KrF excimer laser light through a mask, the base is generated in the surface of an exposed portion of the resist film, so that the surface of the exposed portion is made hydrophilic by the base. If water vapor is supplied to the surface of the resist film, water is diffused from the surface of the exposed portion into a deep portion. If vapor of e.g. methyltriethoxysilane is sprayed onto the surface of the resist film in air at a relative humidity of 95%, an oxide film with a sufficiently large thickness is selectively formed on the surface of the exposed portion.
摘要翻译： 通过使用化学放大抗蚀剂在半导体衬底上形成抗蚀剂膜，所述化学放大抗蚀剂响应于KrF准分子激光的辐射而产生碱并与基底反应。 如果通过掩模用KrF准分子激光照射抗蚀剂膜，则基底在抗蚀剂膜的暴露部分的表面中产生，使得暴露部分的表面被基底亲水化。 如果水蒸气供应到抗蚀剂膜的表面，则水从暴露部分的表面扩散到深部。 如果例如 甲基三乙氧基硅烷在相对湿度为95％的空气中喷涂到抗蚀剂膜的表面上，在暴露部分的表面上选择性地形成具有足够厚度的氧化膜。
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53.发明公开Pattern forming method and semiconductor processing method 失效黑曜石和Verfahren zur Erzeugung von Mustern的Behandlungsmethode
公开(公告)号：EP0860743A2
公开(公告)日：1998-08-26
申请号：EP98103054.7
申请日：1998-02-20
IPC分类号： G03F7/26
CPC分类号： G03F7/265
摘要： A resist film which generates a sulfonic acid through irradiation with an energy beam is irradiated with a KrF excimer laser beam through a mask to generate a sulfonic acid in the exposed area. Then, a semiconductor substrate is immersed in a solution of polysiloxane having an amino group, and dried. This causes the electrostatic adsorption of the polysiloxane having an ammonium ion on the surface of the exposed area of the resist film where a sulfonic acid ion is present to form a polysiloxane film. Thereafter, the resist film is subjected to O 2 plasma etching by using the polysiloxane film as a mask to form a resist pattern.
摘要翻译： 通过用能量束照射产生磺酸的抗蚀剂膜通过掩模用KrF准分子激光束照射，以在曝光区域产生磺酸。 然后，将半导体基板浸渍在具有氨基的聚硅氧烷的溶液中，并干燥。 这导致在存在磺酸离子的抗蚀剂膜的暴露区域的表面上具有铵离子的聚硅氧烷的静电吸附形成聚硅氧烷膜。 此后，通过使用聚硅氧烷膜作为掩模对抗蚀剂膜进行O 2等离子体蚀刻以形成抗蚀剂图案。
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公开(公告)号：EP0712047A3
公开(公告)日：1997-05-28
申请号：EP95117948.0
申请日：1995-11-14
CPC分类号： G03F7/70658 , G03F7/038 , G03F7/20 , G03F7/265 , G03F7/30 , G03F7/38 , G03F7/70675
摘要： A first correlation is obtained which is a correlation between latent image height produced after exposure on a resist layer, and resist pattern linewidth for a given length of develop time. Additionally, a second correlation is obtained which is a correlation between develop time for each exposure energy dose and resist pattern linewidth. The height of a latent image produced on an actually exposed resist layer is determined. From the first correlation, an estimated resist pattern linewidth, which is a resist pattern linewidth corresponding to a latent image height and to a given length of develop time, is found. From the second correlation, an estimated exposure energy dose, which is an exposure energy dose corresponding to a given length of develop time and to an estimated resist patten linewidth, is found. Additionally, also from the second correlation, develop time corresponding to a target resist pattern linewidth and to an estimated exposure energy dose is found, and according to the develop time found, a resist pattern is formed.
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公开(公告)号：EP0773478A1
公开(公告)日：1997-05-14
申请号：EP96117967.8
申请日：1996-11-08
CPC分类号： G03F7/039 , C08F8/30 , G03F7/0045 , G03F7/38
摘要： A patterning material includes a polymer represented by a general formula:
wherein R 1 indicates a hydrogen atom or an alkyl group; R 2 indicates a hydrophobic protecting group which is easily desorbed through a function of an acid; R 3 indicates a hydrogen atom or an alkyl group; R 4 and R 5 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group, or together indicate a cyclic alkyl group, a cyclic alkenyl group or a cyclic alkyl or alkenyl group having a phenyl group; x satisfies a relationship of 0摘要翻译： 图案形成材料包括由以下通式表示的聚合物：
其中R1表示氢原子或烷基; R2表示通过酸的功能容易解吸的疏水性保护基; R3表示氢原子或烷基; R4和R5独立地表示氢原子，烷基，苯基或烯基，或者一起表示环状烷基，环状烯基或具有苯基的环状烷基或烯基; x满足0 的关系 -
公开(公告)号：EP0488372A1
公开(公告)日：1992-06-03
申请号：EP91120519.3
申请日：1991-11-29
CPC分类号： G03F7/0045 , G03F7/092 , G03F7/093 , G03F7/38
摘要： A stable and accurate fine resist pattern which is not influenced by the time of standing from radiation exposure to heat treatment after radiation exposure, can be formed by coating a chemical amplification resist film containing an acid-generating agent with a water-soluble polymer resin incompatible with the resist film.
摘要翻译： 可以通过将含有酸产生剂的化学放大抗蚀剂膜与水溶性聚合物树脂不相容而形成，其不受放射线暴露于曝光后的热处理的时间的影响的稳定且精确的精细抗蚀剂图案 与抗蚀剂膜。
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57.发明公开
公开(公告)号：EP1610180A3
公开(公告)日：2008-04-02
申请号：EP05012156.5
申请日：2005-06-06
发明人： Endo, Masayuki , Sasago, Masaru
IPC分类号： G03F7/20
CPC分类号： G03F7/70341 , G03F7/2041 , G03F7/70891
摘要： In a pattern formation method employing immersion lithography, after a resist film is formed on a wafer, pattern exposure is performed by selectively irradiating the resist film with exposing light with a liquid including an unsaturated aliphatic acid, such as sunflower oil or olive oil including oleic acid, provided on the resist film. After the pattern exposure, the resist film is developed so as to form a resist pattern made of the resist film.
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公开(公告)号：EP1632813A3
公开(公告)日：2007-10-24
申请号：EP05018106.4
申请日：2005-08-19
发明人： Endo, Masayuki , Sasago, Masaru
IPC分类号： G03F7/20
CPC分类号： G03F7/70341 , G03F7/70733 , G03F7/70866 , Y10S430/146
摘要： An exposure system includes an exposure section (50) provided within a chamber (30) for irradiating a resist film formed on a wafer (40) with exposing light through a mask (41) with an immersion liquid (42) provided on the resist film. It further includes a drying section (54) for drying the surface of the resist film after the irradiation.
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59.发明公开
公开(公告)号：EP1531362A3
公开(公告)日：2007-07-25
申请号：EP04026224.8
申请日：2004-11-04
发明人： Endo, Masayuki , Sasago, Masaru
IPC分类号： G03F7/20
CPC分类号： G03F7/70341
摘要： A semiconductor manufacturing apparatus includes a liquid supplying section for supplying a liquid onto a stage for holding a wafer on which a resist film is formed; an exposing section for irradiating the resist film with exposing light through a mask with the liquid provided on the resist film; and a removing part for removing, from the liquid, a gas included in the liquid. Thus, the liquid from which the gas has been removed is provided on the resist film, and therefore, foams included in the liquid or formed during the exposure can be removed. Accordingly, exposure abnormality such as diffraction abnormality can be prevented, resulting in forming a resist pattern in a good shape.
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60.发明公开Chemically amplified resist and pattern formation method 审中-公开ChemischverstärkterResist和Verfahren zur Herstellung von Mustern
公开(公告)号：EP1557719A3
公开(公告)日：2007-04-18
申请号：EP05001274.9
申请日：2005-01-21
发明人： Endo, Masayuki , Sasago, Masaru
CPC分类号： G03F7/0392 , G03F7/0046 , G03F7/11 , G03F7/2041
摘要： A resist film made of a chemically amplified resist including a water-soluble polymer is formed on a substrate, whereas the water-soluble polymer has lower gas permeability than the chemically amplified resist. Subsequently, pattern exposure is carried out by selectively irradiating the resist film with exposing light through a mask, and thereafter, the resultant resist film is developed. Thus, a fine resist pattern made of the resist film is formed in a good shape.
摘要翻译： 在基材上形成由包含水溶性聚合物的化学放大抗蚀剂制成的抗蚀剂膜，而水溶性聚合物的透气性比化学增幅抗蚀剂低。 随后，通过通过掩模曝光光选择性地照射抗蚀剂膜来进行图案曝光，然后使所得的抗蚀剂膜显影。 因此，由抗蚀剂膜制成的精细抗蚀剂图案形成为良好的形状。
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