-
公开(公告)号：EP3498893B1
公开(公告)日：2020-05-27
申请号：EP18210122.0
申请日：2018-12-04
-
52.发明公开
公开(公告)号：EP3394322A1
公开(公告)日：2018-10-31
申请号：EP16813329.6
申请日：2016-12-06
申请人： Element Six Technologies Limited , Element Six Technologies US Corporation , Lew, Wilbur , Bruce, Gregory Scott
发明人： LEW, Wilbur , BRUCE, Gregory Scott , EDMONDS, Andrew Mark , MARKHAM, Matthew Lee , STACEY, Alastair Douglas , DHILLON, Harpreet Kaur
摘要： A single crystal diamond material comprising: neutral nitrogen-vacancy defects (NV0); negatively charged nitrogen-vacancy defects (NV-); and single substitutional nitrogen defects (Ns) which transfer their charge to the neutral nitrogen- vacancy defects (NV0) to convert them into the negatively charged nitrogen-vacancy defects (NV ), characterized in that the single crystal diamond material has a magnetometry figure of merit (FOM) of at least 2, wherein the magnetometry figure of merit is defined by (I) where R is a ratio of concentrations of negatively charged nitrogen-vacancy defects to neutral nitrogen-vacancy defects ([NV-]/[NV0]), [NV- ] is the concentration of negatively charged nitrogen- vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, [NV0] is a concentration of neutral nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, and T2' is a decoherence time of the NV- defects, where T2' is T2* for DC magnetometry or T2 for AC magnetometry.
-
53.发明授权
公开(公告)号：EP1811065B1
公开(公告)日：2017-03-29
申请号：EP07000774.5
申请日：2007-01-16
申请人： SUMCO CORPORATION
发明人： Umeno, Shigeru
IPC分类号： C30B15/04 , C30B15/30 , H01L21/322 , H01L21/06 , H01L29/66 , C30B29/06 , C30B31/20 , C30B33/04 , H01L29/06 , H01L29/739
CPC分类号： H01L29/7395 , C30B15/04 , C30B15/305 , C30B29/06 , C30B31/20 , C30B33/04 , H01L21/3221 , H01L21/3225 , H01L29/0657 , H01L29/66325 , Y10T428/21
-
54.发明公开INTERNAL REFORMING SUBSTRATE FOR EPITAXIAL GROWTH, INTERNAL REFORMING SUBSTRATE WITH MULTILAYER FILM, SEMICONDUCTOR DEVICE, BULK SEMICONDUCTOR SUBSTRATE, AND PRODUCTION METHODS THEREFOR 审中-公开与内部重整的外延生长，衬底，内部重整和多层薄膜，半导体元件，化合物半导体衬底及其制造方法衬底
公开(公告)号：EP2543752A4
公开(公告)日：2015-12-02
申请号：EP11750807
申请日：2011-03-04
发明人： AIDA HIDEO , AOTA NATSUKO , HOSHINO HITOSHI , FURUTA KENJI , HAMAMOTO TOMOSABURO , HONJO KEIJI
IPC分类号： C30B29/20 , B23K26/00 , B23K26/40 , C30B33/02 , C30B33/04 , H01L21/02 , H01L21/20 , H01L21/268 , H01L21/324 , H01L31/18 , H01L33/00
CPC分类号： C30B33/04 , B23K26/0006 , B23K26/0057 , B23K2203/56 , H01L21/0237 , H01L21/0242 , H01L21/02428 , H01L21/0254 , H01L21/02658 , H01L21/02686 , H01L21/268 , H01L31/184 , H01L33/007
-
公开(公告)号：EP2576441A2
公开(公告)日：2013-04-10
申请号：EP11724178.6
申请日：2011-06-01
申请人： Element Six Limited
发明人： TWITCHEN, Daniel, James , GEOGHEGAN, Sarah, Louise , PERKINS, Neil , SCARSBROOK, Geoffrey, Alan
CPC分类号： C09K3/14 , B24D18/00 , B24D99/00 , C01B32/28 , C09K3/1409 , C23C14/0611 , C23C14/48 , C30B29/04 , C30B33/04
摘要： A method comprising: selecting a diamond material; irradiating the diamond material with electrons to increase toughness and/or wear resistance of the diamond material; and processing the diamond material into one or more diamond tool pieces, wherein the irradiating comprises controlling energy and dosage of irradiation to provide the diamond material with a plurality of isolated vacancy point defects, the isolated vacancy point defects having a concentration in a range 1 x 10
14 to 1 x 10
22 vacancies/cm
-3-
56.发明公开Multilayer nanocrystal structure and method for producing the same 有权Mehrschichtige Nanokristallstruktur und Verfahren zu ihrer Herstellung
公开(公告)号：EP1980652A2
公开(公告)日：2008-10-15
申请号：EP08150383.1
申请日：2008-01-17
发明人： Jang, Eun Joo Samsung Advanced Inst. of Techn. Mt. , Jun, Shin Ae Samsung Advanced Inst. of Techn. Mt. , Lim, Jung Eun Samsung Advanced Inst. of Techn. Mt. , Choi, Hye Ran Samsung Advanced Inst. of Techn. Mt.
CPC分类号： C30B7/14 , C30B29/40 , C30B29/48 , C30B29/605 , Y10T428/2989
摘要： Disclosed herein is a multilayer nanocrystal structure (300) comprising a nanocrystal alloy core (100) comprising two or more nanocrystals (10,50) and including an alloy interlayer (30) formed at an interface between the two or more nanocrystals (10,50), and one or more layers of nanocrystal shells (110,120) formed sequentially on the surface of the nanocrystal alloy core, wherein the nanocrystal shells (110,120) each have different band gaps. The multilayer nanocrystal structure (300) can be applied to various electronic devices owing to its advantages of high luminescence efficiency, superior optical stability, and superior chemical stability.
摘要翻译： 本文公开了一种多层纳米晶体结构（300），其包括纳米晶体合金芯（100），其包含两个或多个纳米晶体（10,50），并且包括在两个或更多个纳米晶体（10,50）之间的界面处形成的合金中间层 ）和在纳米晶体合金芯的表面上顺序形成的一层或多层纳米晶体壳（110,120），其中纳米晶体壳（110,120）各自具有不同的带隙。 多层纳米晶体结构（300）由于其发光效率高，光学稳定性优异，化学稳定性优异，因而可应用于各种电子器件。
-
公开(公告)号：EP0638670B1
公开(公告)日：2001-05-30
申请号：EP94305692.9
申请日：1994-08-01
CPC分类号： B01J3/062 , B01J2203/062 , B01J2203/0655 , B01J2203/069 , C30B29/04 , C30B33/00
摘要： The purity and toughness of a batch of diamond grains is increased by separating a portion containing undesirable inclusions from a remaining higher purity portion and annealing the higher purity portion in a reducing atmosphere for a sufficient period of time to enhance the toughness of the higher purity portion.
-
公开(公告)号：EP0643158B1
公开(公告)日：1999-04-28
申请号：EP94114091.5
申请日：1994-09-08
发明人： Yamada, Kazuhiro, c/o Mitsui Petrochem. Ind. Ltd. , Takemura, Shuji, c/o Mitsui Petrochem. Ind. Ltd. , Mori, Hiroshi, c/o Mitsui Petrochem. Ind. Ltd.
IPC分类号： C30B33/04
摘要： There has been provided by the present invention a process for producing a single crystal of potassium niobate which comprises disposing a positive electrode directly or via a semi-insulating substance layer on one c-plane of a single crystal of potassium niobate and also a negative electrode via a semi-insulating substance layer on the other c-plane of the single crystal of potassium niobate, said positive and negative electrodes being disposed in mutually facing relationship, and applying voltage between the positive and negative electrodes so as to poll (convert to the single-domain state) the single crystal of potassium niobate, and which enables to poll the entire region of the single crystal of potassium niobate without quality deterioration.
-
59.发明授权Diamond laser and method of producing the same and method of operating the same 失效金刚石激光及其制造方法及其操作方法
公开(公告)号：EP0327111B1
公开(公告)日：1991-06-12
申请号：EP89101933.3
申请日：1989-02-03
发明人： Shuichi, Satoh c/o Itami Works of , Kazuwo, Tsuji c/o Itami Works of , Takeru, Nakashima c/o Itami Works of
摘要： A diamond laser formed of synthetic diamond and providing high output power and variable wavelength in the near infrared region. The maximum value of the optical density of H2 centers in the direction of pumping light is in the range of 0.01 - 4. Laser action is effected in the range of 1000 - 1400 nm by means of external pumping light at 650 - 950 nm. Such diamond laser is produced by preparing a synthetic Ib type diamond whose nitrogen concentration is 1 x 10 - 8.5 10 atoms/cm , subjecting this synthetic diamond to electron irradiation to a dose of not less than 5 x 10 electrons/cm , and heat-treating the synthetic diamond in a vacuum of not more than 1 Torr or in an inert gas atmosphere and at 1400 - 1850 DEG C. Let Ith the threshold value of pumping light intensity necessary for laser action. Then, to make the pumping light intensity I greater than Ith throughout the laser crystal, it is important that the maximum value of optical density of H2 centers be between 0.01 and 4.
-
公开(公告)号：EP4419742A1
公开(公告)日：2024-08-28
申请号：EP22801180.5
申请日：2022-10-19
-
-
-
-
-
-
-
-
-
搜索结果
79 条记录 (耗时 0.013 秒)
