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    SYSTEM FOR THE TREATMENT OF WAFERS
    61.
    发明公开
    SYSTEM FOR THE TREATMENT OF WAFERS 有权
    设备技术处理半导体DISCS

    公开(公告)号：EP1057212A1

    公开(公告)日：2000-12-06

    申请号：EP99902928.3

    申请日：1999-01-27

    申请人： ASM INTERNATIONAL N.V.

    发明人： SLUIJK, Boudewijn, Gijsbert ,  DE RIDDER, Christianus, Gerardus, Maria

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67769 ,  Y10S414/14

    摘要： Installation for treatment of wafers in a reactor. To that end a series of wafers is placed in a wafer rack and fed into the reactor. Transport into and out of the reactor, which is sited in an enclosed chamber, takes place with the aid of conveyor means. The wafers are transferred from the wafer rack to one or more cassettes. During this operation the wafer rack is always in the vertical position, that is to say the wafers are horizontal. The same preferably also applies to the cassettes, so that the wafers remain horizontal throughout the entire process.

    High throughput multi station processor for multiple single wafers
    66.
    发明公开
    High throughput multi station processor for multiple single wafers 失效
    具有多个与多个单独的半导体晶片的高通量的位置处理单元。

    公开(公告)号：EP0399616A1

    公开(公告)日：1990-11-28

    申请号：EP90201297.0

    申请日：1990-05-22

    申请人： ASM INTERNATIONAL N.V.

    发明人： Hey, H. Peter W. ,  Mazak, William A. ,  Aggarwal, Ravinder K. ,  Curtin, John H. ,  Brown, Paul B. ,  Smith, Joe R.

    IPC分类号： H01L21/00

    CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/54 ,  H01L21/67103 ,  H01L21/67109

    摘要： Each of a plurality of individually heated circularly located susceptors supports and heats one of a plurality of wafers within a processing chamber. An overhead gas dispersion head, vertically aligned with each susceptor, directs, in combination with downstream flow control structure, flow of a reactant gas radially uniformly across the supported wafer. A spider sequentially relocates each of the wafers, as a group, to an adjacent susceptor. Wafer handling apparatus replaces each processed wafer to provide a high production rate throughput. A source of RF energy radiating essentially primarily between each gas dispersion head and its associated susceptor provides a plasma enhanced environment and the low level intensity elsewhere within the reactor reduces residual deposits.

    摘要翻译： 每个独立加热圆位于基座支撑件的多个并加热晶片的处理室中的多个中的一个。 塔顶气体分散头，其中每个基座，ausrichtet垂直对齐，结合下游流动控制结构，反应物气体的流动径向均匀分布在支撑晶片。 蜘蛛按顺序重新定位每个晶片，为一组，以基座上相邻。 晶片处理装置来替换每一个处理后的晶片以提供高的生产速率的吞吐量。 RF能量辐射每个气体分散头及其相关的基座之间本质上主要的源极提供一等离子体增强环境和其他地方的反应器内的低强度级的减少了残留的沉积物。