公开(公告)号：EP2521165B1

公开(公告)日：2018-09-12

申请号：EP09852805.2

申请日：2009-12-28

申请人： Fujitsu Limited

发明人： KANKI, Tsuyoshi ,  NAKATA, Yoshihiro ,  KOBAYASHI, Yasushi

IPC分类号： H01L21/02 ,  H01L21/321 ,  H01L21/768 ,  H01L23/532 ,  H01L21/288 ,  H05K3/24

CPC分类号： H01L21/76877 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/321 ,  H01L21/76834 ,  H01L21/76841 ,  H01L21/76852 ,  H01L21/76874 ,  H01L21/76883 ,  H01L21/76885 ,  H01L23/53238 ,  H01L2924/00 ,  H01L2924/0002 ,  H05K3/24

摘要： [Object] To provide an interconnection structure and a method of forming the same, the interconnection structure capable of avoiding an increase in leakage current or an increase in interconnection resistance caused by oxidation, being less likely to have electromigration occur therein, and having a higher reliability than the conventional ones. [Solving Means] After a copper interconnection is formed above a substrate, a surface of the copper interconnection is activated by performing acid cleaning. Thereafter, the substrate is immersed in a BTA (Benzo triazole) aqueous solution to form a protection film covering the surface of the copper interconnection. At this time, Cu-N-R bonds (R is an organic group) are formed in grain boundary portions in the surface of the copper interconnection. Thereafter, the protection film is removed by performing alkaline cleaning. The Cu-N-R bonds remain in the grain boundary portions in the surface of the copper interconnection even after the protection film is removed. Subsequently, the surface of the copper interconnection is subjected to an activation process, and a barrier layer is formed thereafter by electroless-plating the surface of the copper interconnection with NiP or CoWP.

公开(公告)号：EP3216048A4

公开(公告)日：2018-07-25

申请号：EP15858000

申请日：2015-11-05

申请人： APPLIED MATERIALS INC

发明人： AI HUA ,  LU JIANG ,  GELATOS AVGERINOS V ,  MA PAUL F ,  YU SANG HO ,  LIU FENG Q ,  FU XINYU ,  YE WEIFENG

IPC分类号： H01L21/285 ,  C23C16/04 ,  C23C16/06 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L21/76879 ,  C23C16/04 ,  C23C16/06 ,  H01L21/02068 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods for selectively depositing a cobalt layer are provided herein. In some embodiments, methods for selectively depositing a cobalt layer include: exposing a substrate to a first process gas to passivate an exposed dielectric surface, wherein the substrate comprises a dielectric layer having an exposed dielectric surface and a metal layer having an exposed metal surface; and selectively depositing a cobalt layer atop the exposed metal surface using a thermal deposition process.

公开(公告)号：EP3216048A1

公开(公告)日：2017-09-13

申请号：EP15858000.1

申请日：2015-11-05

申请人： Applied Materials, Inc.

发明人： AI, Hua ,  LU, Jiang ,  GELATOS, Avgerinos V. ,  MA, Paul F. ,  YU, Sang Ho ,  LIU, Feng Q. ,  FU, Xinyu ,  YE, Weifeng

IPC分类号： H01L21/28

CPC分类号： H01L21/76879 ,  C23C16/04 ,  C23C16/06 ,  H01L21/02068 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods for selectively depositing a cobalt layer are provided herein. In some embodiments, methods for selectively depositing a cobalt layer include: exposing a substrate to a first process gas to passivate an exposed dielectric surface, wherein the substrate comprises a dielectric layer having an exposed dielectric surface and a metal layer having an exposed metal surface; and selectively depositing a cobalt layer atop the exposed metal surface using a thermal deposition process.

摘要翻译： 本文提供了用于选择性沉积钴层的方法。 在一些实施例中，用于选择性地沉积钴层的方法包括：将衬底暴露于第一工艺气体以钝化暴露的电介质表面，其中该衬底包括具有暴露的电介质表面的介电层和具有暴露的金属表面的金属层; 以及使用热沉积工艺在暴露的金属表面顶上选择性地沉积钴层。

公开(公告)号：EP3206222A1

公开(公告)日：2017-08-16

申请号：EP17152662.7

申请日：2017-01-23

申请人： Semiconductor Manufacturing International Corporation (Shanghai) ,  Semiconductor Manufacturing International Corporation (Beijing)

发明人： XU, Jianhua

IPC分类号： H01L21/285 ,  H01L21/768

CPC分类号： H01L21/76879 ,  H01L21/02068 ,  H01L21/28556 ,  H01L21/76876 ,  H01L21/76877

摘要： A method for manufacturing a semiconductor device includes providing a substrate, performing a nucleation process on the substrate to form a nucleation layer of a metal, performing a first deposition process at a first temperature on the nucleation layer to form a first layer of the metal, etching back the first layer of the metal using a first gas, cleaning the substrate including the etched back first layer of the metal using a second gas, and performing a second deposition process to form a second layer of the metal on the etched back first layer of the metal. By cleaning the substrate and the etched-back first layer of the metal using the second gas, the thickness fluctuation of the deposited metal layer from wafer to wafer is significantly reduced.

摘要翻译： 一种用于制造半导体器件的方法包括提供衬底，在衬底上执行成核过程以形成金属成核层，在成核层上以第一温度执行第一沉积过程以形成第一金属层， 使用第一气体回蚀所述金属的所述第一层，使用第二气体清洁包括所述金属的所述回蚀第一层的所述衬底，以及执行第二沉积处理以在所述回蚀第一层上形成所述金属的第二层 的金属。 通过使用第二气体清洁衬底和金属的回蚀第一层，沉积金属层从晶片到晶片的厚度波动显着减小。

公开(公告)号：EP2602309B1

公开(公告)日：2017-05-03

申请号：EP12195375

申请日：2012-12-04

申请人： KANTO KAGAKU

发明人： TANIGUCHI YUMIKO ,  MORITA KIKUE ,  HORIKE CHIYOKO ,  OHWADA TAKUO

IPC分类号： C11D11/00 ,  C11D3/30 ,  C11D3/36 ,  C11D7/32 ,  C11D7/36 ,  C23G1/18 ,  C23G1/20 ,  H01L21/02

CPC分类号： C11D7/3209 ,  C11D3/30 ,  C11D3/361 ,  C11D7/36 ,  C11D11/0047 ,  C23G1/18 ,  C23G1/20 ,  H01L21/02052 ,  H01L21/02068

公开(公告)号：EP2989231A1

公开(公告)日：2016-03-02

申请号：EP14787602.3

申请日：2014-04-22

申请人： Advanced Technology Materials, Inc.

发明人： LIU, Jun ,  SUN, Laisheng ,  MEDD, Steven ,  BARNES, Jeffrey, A. ,  WRSCHKA, Peter ,  THOMAS, Elizabeth

IPC分类号： C23G1/00 ,  C23G1/18

CPC分类号： C11D3/0073 ,  C11D3/0042 ,  C11D3/30 ,  C11D11/0041 ,  C11D11/0047 ,  C23G1/18 ,  C23G1/20 ,  H01L21/02068 ,  H01L21/02074

摘要： A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include corrosion inhibitor(s) and surfactant(s). The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

摘要翻译： 一种清洁组合物和方法，用于清洁来自其上具有所述残留物和污染物的微电子装置的化学机械抛光（CMP）残渣和污染物。 清洁组合物包括腐蚀抑制剂和表面活性剂。 该组合物实现了对微电子器件表面上的CMP后残留物和污染物质的高效清洁，而不损害低k介电材料或铜互连材料。

公开(公告)号：EP2843689A4

公开(公告)日：2015-05-13

申请号：EP13780549

申请日：2013-04-26

申请人： WAKO PURE CHEM IND LTD

发明人： KAWADA HIROMI ,  MIZUTA HIRONORI ,  MAESAWA TSUNEAKI

IPC分类号： C11D7/32 ,  C11D7/36 ,  H01L21/306

CPC分类号： C11D11/0047 ,  C11D7/3218 ,  C11D7/36 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/31055 ,  H01L21/3212 ,  H01L21/7684

摘要： The purpose of the present invention is to provide: a cleaning agent for a semiconductor substrate superior in corrosion resistance of a tungsten wiring or a tungsten alloy wiring, and superior in removal property of polishing fines (particle) such as silica or alumina, remaining at surface of the semiconductor substrate, in particular, at surface of a silicon oxide film such as a TEOS film, after a chemical mechanical polishing process; and a method for processing a semiconductor substrate surface. The present invention relates to a cleaning agent for a semiconductor substrate to be used in a post process of a chemical mechanical polishing process of the semiconductor substrate having a tungsten wiring or a tungsten alloy wiring, and a silicon oxide film, comprising (A) a phosphonic acid-based chelating agent, (B) a primary or secondary monoamine having at least one alkyl group or hydroxyalkyl group in a molecule and (C) water, wherein a pH is over 6 and below 7; and a method for processing a semiconductor substrate surface.

公开(公告)号：EP2847364A1

公开(公告)日：2015-03-18

申请号：EP13787810.4

申请日：2013-05-10

申请人： Entegris, Inc.

发明人： CHEN, Tianniu ,  BILODEAU, Steven M. ,  COOPER, Emanuel I. ,  CHEN, Li-Min ,  BARNES, Jeffrey A. ,  BISCOTTO, Mark ,  BOGGS, Karl E. ,  RAJARAM, Rekha

IPC分类号： C23F1/08 ,  H01L21/302

CPC分类号： H01L21/32134 ,  C23F1/28 ,  C23F1/30 ,  C23F1/44 ,  H01L21/02068 ,  H01L21/28518

摘要： Compositions and methods for substantially and efficiently removing NiPt (1-25%) material from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as gate metal materials.

公开(公告)号：EP2733724A4

公开(公告)日：2015-01-21

申请号：EP12811679

申请日：2012-06-22

申请人： KURITA WATER IND LTD

发明人： NAGAI TATSUO ,  YAMAKAWA HARUYOSHI

IPC分类号： H01L21/304 ,  H01L21/02 ,  H01L21/027 ,  H01L21/28 ,  H01L21/311 ,  H01L21/336 ,  H01L21/67 ,  H01L29/78

CPC分类号： H01L21/02068 ,  H01L21/02057 ,  H01L21/02071 ,  H01L21/31133 ,  H01L21/67017

公开(公告)号：EP2401655B1

公开(公告)日：2014-03-12

申请号：EP10704029.7

申请日：2010-01-14

申请人： Avantor Performance Materials, Inc.

发明人： HSU, Chien-Pin S. ,  WESTWOOD, Glenn ,  GEMMILL, William, R.

IPC分类号： G03F7/42 ,  C11D7/08 ,  C11D7/26 ,  C11D7/34 ,  C11D7/36 ,  C11D7/50 ,  C11D11/00 ,  H01L21/02

CPC分类号： C11D7/50 ,  C11D7/08 ,  C11D7/261 ,  C11D7/34 ,  C11D7/36 ,  C11D7/5004 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/02068