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    An electron beam head
    61.
    发明公开
    An electron beam head 失效
    Elektronenstrahlkopf。

    公开(公告)号：EP0289277A2

    公开(公告)日：1988-11-02

    申请号：EP88303780.6

    申请日：1988-04-27

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Okunuki, Masahiko 182-8 Takao Itsukaichimachi ,  Seki, Mitsuaki

    IPC: H01J37/073 ,  H01J1/30

    CPC classification number: H01J37/073 ,  H01J1/304 ,  H01J37/3045

    Abstract: An electron beam head particularly suitably usable in an electron beam pattern drawing apparatus or otherwise is disclosed. The electron beam head includes an electron beam source (BG) and an electron beam detector (PN) which are provided on a common base member. Secondary electrons (2e) and/or reflected electrons caused when an electron beam (EB) emitted from the electron beam source impinges upon a workpiece or an object to be examined, are detected by the detector. These secondary electrons and/or reflected electrons can be efficiently collected and detected and, on the basis of which, the information concerning the position or otherwise related to the workpiece or the object to be examined can be detected precisely.

    Abstract translation: 特别适用于电子束图形绘制装置或其他方面的电子束头被公开。 电子束头包括设置在公共基底构件上的电子束源（BG）和电子束检测器（PN）。 当从电子束源发射的电子束（EB）撞击到被检查物体或检测对象物时，二次电子（2e）和/或反射电子被检测器检测到。 可以有效地收集和检测这些二次电子和/或反射电子，并且可以精确地检测关于工件或待检查对象的位置或其它方面的信息。

    Verfahren zur automatischen Positionierung einer Korpuskularsonde
    62.
    发明公开
    Verfahren zur automatischen Positionierung einer Korpuskularsonde 失效
    对于血球探针的自动定位方法。

    公开(公告)号：EP0177717A1

    公开(公告)日：1986-04-16

    申请号：EP85110382.0

    申请日：1985-08-19

    Applicant: SIEMENS AKTIENGESELLSCHAFT

    Inventor： Wolfgang, Eckhard, Dr. ,  Rummel, Peter, Dipl.-Ing.

    IPC: H01J37/304 ,  G01R31/28

    CPC classification number: G01R31/305 ,  H01J37/3045

    Abstract: Eine Korpuskularsonde (PE) soll auch dann auf einen bestimmten Bereich (MP, MP3) positioniert werden können, wenn die Ist-Lage dieses bestimmten Bereichs (MP, MP3) aufgrund von lokalen Feldem gegenüber seiner Soll-Lage verschoben ercheint und sich daher nicht von vornherein mit hoher Genauigkeit festlegen läßt. Die Korpuskularsonde (PE) wird auf einen vorgegebenen Bereich positioniert. Sodann wird die Korpuskularsonde (PE) in der Umgebung dieses Bereichs so abgelenkt, daß die Korpuskularsonde (PE) auf unterschiedliche Bereiche auftrifft. Aus den Meßsignalen, die beim Auftreffen der Korpuskularsonde (PE) auf die unterschiedlichen Bereiche ausgelöst werden, wird die Lage des bestimmten Bereichs (MP, MP3) ermittelt Die Korpuskularsonde (PE) wird auf diesen Bereich (MP, MP3) positioniert. Eine elektrische Leitung (L, L3) besitzt einen Prüfflecken (MP, MP3), bei dem eine Abmessung größer ist als die Breite der Leitbahn (L,L3).

    Abstract translation: 的粒子探针（PE）也应适用于一个特定的区域（MP，MP3），当该特定区域（MP，MP3）的实际位置ercheint推迟可定位由于相对于其标称位置，并且因此不会局部场 可以高精度地确定开始。 血球探针（PE）被定位在预定范围内。 然后被偏转的红细胞探头（PE）在这方面的接近，使得红细胞探头（PE）是事件上的不同区域。 从测量的信号，（PE）可在不同的区域来触发对粒子探针的影响，特定区域（MP，MP3）的位置被确定。 粒子探针（PE）被定位在此区域（MP，MP3）。 电气线路（L，L3）具有测试焊盘（MP，MP3），其中一个尺寸比所述互连（L，L3）的宽度大。

    Method of using an electron beam
    64.
    发明公开
    Method of using an electron beam 失效
    施加电子束的方法。

    公开(公告)号：EP0078578A2

    公开(公告)日：1983-05-11

    申请号：EP82201356.1

    申请日：1982-10-29

    Applicant: PHILIPS ELECTRONICS UK LIMITED ,  Philips Electronics N.V.

    Inventor： King, Hewson Nicholas Graham ,  Beasley, James Patrick

    IPC: H01J37/304

    CPC classification number: H01J37/3045

    Abstract: When an electron beam (4) is used to effect a process at two adjacent surface areas (5a, 5b) of a target such as a semiconductor wafer (1) coated with an electron sensitive resist (3) various alignment errors can occur, for example if the wafer becomes distorted. The provision of a reference marker, for example a square-etched depression (7), at the surface of the target between the areas (5a, 5b) enables the detection of any such distortion. After effecting the process at one of the areas (5a) an electron beam with a rectangular shaped spot is directed, in turn, towards the predetermined positions of two mutually transverse sides (A, B) of the marker (7). in the absence of any alignment error the beam spot overlies the side in question such that it overlaps the marker (7) and the area of the target in the immediate vicinity. The back-scattered electrons can then be detected to give a signal representative of any deviation between the actual position and the predetermined position of the marker so that the electron beam can be correctly aligned when effecting the process at the second of the two areas (5b). For increased accuracy of alignment a plurality of markers (7) may be provided between the areas (5a, 5b).

    REREGISTRATION SYSTEM FOR A CHARGED PARTICLE BEAM EXPOSURE SYSTEM
    65.
    发明公开
    REREGISTRATION SYSTEM FOR A CHARGED PARTICLE BEAM EXPOSURE SYSTEM 失效
    带电粒子束曝光系统的分类系统

    公开(公告)号：EP0073235A1

    公开(公告)日：1983-03-09

    申请号：EP82901055.0

    申请日：1982-02-12

    Applicant: VEECO INSTRUMENTS INC.

    Inventor： WESTERBERG, Eugene R. ,  CONE, Donald R. ,  MURAY, Julius J. ,  TERRY, Jan C.

    IPC: H01L21 ,  G03F9 ,  H01J37

    CPC classification number: G03F9/00 ,  H01J37/3045

    Abstract: Systeme de rereperage permettant de determiner l'emplacement et de positionner la surface cible d'un substrat de tranche (275) par rapport a une pluralite de rayons de particules chargees utilisees pour ecrire directement le schema d'un circuit integre simultanement a une pluralite d'emplacements sur le substrat. Le rereperage est execute en explorant avec deux ou plusieurs rayons de particules chargees (100, 150) un nombre correspondant de reperes fiduciels de re-reperage (200, 250) sur le substrat (275). Ces reperes (200, 250) peuvent se composer d'un materiau possedant un nombre atomique eleve ou des caracteristiques topographiques definies au prealable. Des electrons disperses par ces reperes (200, 250) sont detectes et convertis en signaux electriques. La relation temporelle entre les rayons d'exploration (100, 150) et les signaux electriques resultants peut etre utilisee pour determiner l'emplacement du substrat.

    Abstract translation: 用于相对于确定晶片衬底（275）的目标表面的位置和定位的多个用来写带电粒子束系统的rereperage直接的电路的示图在多个同时集成 基板上的位置。 所述rereperage执行与衬底（275）上的带电粒子（100，150）的rereperage基准点标记的相应数量（200，250）的两个或更多的射线探索中。 这些索引（200,250）可以由具有高原子序数的材料或可预先定义的地形特征组成。 由这些引脚（200,250）分散的电子被检测并转换成电信号。 扫描射线（100,150）与所得到的电信号之间的时间关系可用于确定衬底的位置。

    Electron beam pattern transfer device and method for aligning mask and semiconductor wafer
    68.
    发明公开
    Electron beam pattern transfer device and method for aligning mask and semiconductor wafer 失效
    样品和调整掩模和晶片的方法的电子转移装置。

    公开(公告)号：EP0065143A2

    公开(公告)日：1982-11-24

    申请号：EP82103628.2

    申请日：1982-04-28

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Mori, Ichiro ,  Sugihara, Kazuyoshi ,  Shinozaki, Toshiaki ,  Tojo, Toru

    IPC: G03B41/00 ,  G03F9/00 ,  H01L21/00

    CPC classification number: H01L21/30 ,  H01J37/3045

    Abstract: According to the invention an electron beam pattern transfer device with an improved alignment means is provided.
    A first and a second mark M,, M 2 for alignment purposes are formed on the surface of the wafer (26) and the wafer holder (27), respectively. The first mark M, is formed on the wafer by conventional lithographic technique and the second mark M 2 consists of a hole or a heavy metal, such as Ta or Ta 2 O 5 . A third alignment mark M 3 is provided on the photocathode mask having a position corresponding to M 2 on the wafer holder and spaced a known distance L 2 from an imaginary reference position M 4 on the mask. The first step of the alignment process requires the detection of a relative distance L, between the first and second marks M,, M 2 by conventional detecting means, such as an optical measuring means. In the next step, the relative position of the photocathode mask and the wafer holder is adjusted so that the distance between the marks M 2 and M 3 is made substantially equal to the difference between distance L, and the known distance L 2 .

    An electron beam array lithography apparatus and a method of operating the same
    69.
    发明公开
    An electron beam array lithography apparatus and a method of operating the same 失效
    Elektronenstrahlmatrix-Lithographiegerätund Verwendungsverfahren desselben。

    公开(公告)号：EP0063429A2

    公开(公告)日：1982-10-27

    申请号：EP82301670.4

    申请日：1982-03-30

    Applicant: CONTROL DATA CORPORATION

    Inventor： Harte, Kenneth Jeremy ,  Smith, Donald Oscar

    IPC: H01J37/304

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J37/3177

    Abstract: There is disclosed a method of operating an electron beam array lithography apparatus employing an electron beam column having a lenslet array, a fine deflector assembly and a coarse deflector assembly for selectively directing an electron beam to a desired element of the lenslet array and its associated fine deflector element which directs the electron beam to a desired point on a target plane. The method comprises fabricating a lenslet stitching calibration grid having formed thereon a grid of fiducial marking elements, using the lenslet stitching calibration grid to derive fiducial marking signals indicative of the boundaries of the field of view of the individual elements of the lenslet array, and using the fiducial marking signals to control the electron beam column so as to stitch together the individual fields of view of the elements in the lenslet array in order to cover a desired area of a target workpiece to be exposed to the electron beam and which is greater in surface area than the area covered by the field of view of an individual element of the lenslet array.

    Abstract translation: 公开了一种操作电子束阵列光刻设备的方法，该设备采用具有小透镜阵列的电子束柱，精细偏转器组件和用于选择性地将电子束引导到小透镜阵列的所需元件的粗偏转器组件及其相关细 导向元件，其将电子束引导到目标平面上的期望点。 该方法包括制作在其上形成有基准标记元件网格的小透镜缝合校准网格，使用小透镜缝合校准网格来导出指示小透镜阵列的各个元件的视场边界的基准标记信号，以及使用 基准标记信号以控制电子束列，以便将玻璃镜阵列中的元件的各个视场拼接在一起，以覆盖待暴露于电子束的目标工件的期望区域，并且其中较大的 表面积比由小透镜阵列的单个元件的视野覆盖的区域。

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