公开(公告)号：EP3483919A1

公开(公告)日：2019-05-15

申请号：EP18193544.6

申请日：2009-12-03

Applicant: Veeco Instruments Inc.

Inventor： BELOUSOV, Mikhail ,  MITROVIC, Bojan ,  MOY, Keng

IPC: H01L21/205 ,  C23C16/455 ,  C23C16/458

Abstract: A flow inlet element (22) for a chemical vapor deposition reactor (10) is formed from a plurality of elongated tubular elements (64, 65) extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier (14) rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane (108) extending through the axis.

公开(公告)号：EP2543063B1

公开(公告)日：2019-05-08

申请号：EP11751170.9

申请日：2011-03-01

Applicant: Veeco Instruments Inc.

Inventor： MITROVIC, Bojan ,  MANGUM, Joshua ,  QUINN, William, E.

IPC: H01L21/687 ,  C23C16/30 ,  C23C16/455 ,  C23C16/458

公开(公告)号：EP3381048A1

公开(公告)日：2018-10-03

申请号：EP16871322.0

申请日：2016-11-28

Applicant: Veeco Instruments Inc.

Inventor： SU, Jie ,  PAPASOULIOTIS, George

IPC: H01L21/02 ,  H01L21/324

CPC classification number: H01L29/7783 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/66462 ,  H01L29/7786

Abstract: Methods for stress control in thin silicon (Si) wafer-based semiconductor materials. By a specific interrelation of process parameters (e.g., temperature, reactant supply, time), a highly uniform nucleation layer is formed on the Si substrate that mitigates and/or better controls the stress (tensile and compressive) in subsequent layers formed on the thin Si substrate.

公开(公告)号：EP2321443B1

公开(公告)日：2015-07-22

申请号：EP09806953.7

申请日：2009-08-11

Applicant: Veeco Instruments Inc.

Inventor： PRIDDY, Scott, W. ,  BRESNAHAN, Richard, C.

IPC: C23C14/24 ,  C30B23/06

CPC classification number: C23C14/243 ,  C23C14/0623

公开(公告)号：EP2659244A1

公开(公告)日：2013-11-06

申请号：EP11817495.2

申请日：2011-12-22

Applicant: Veeco Instruments Inc.

Inventor： GURARY, Alexander, I. ,  BOGUSLAVSKIY, Vadim ,  KRISHNAN, Sandeep ,  KING, Matthew

IPC: G01J5/00

CPC classification number: G01J5/0003 ,  G01J5/0007 ,  G01J2005/0048

Abstract: A method of in-situ pyrometer calibration for a wafer treatment reactor such as a CVD reactor 12 desirably includes the steps of positioning a calibrating pyrometer 80 at a first calibrating position A and heating the reactor until the reactor reaches a pyrometer calibration temperature. The method desirably further includes rotating a support element 40 about a rotational axis 42, and while the support element is rotating about the rotational axis, obtaining first operating temperature measurements from a first operating pyrometer 71 installed at a first operating position 1R, and obtaining first calibrating temperature measurements from the calibrating pyrometer 80. Both the calibrating pyrometer 80 and the first operating pyrometer 71 desirably are adapted to receive radiation from a first portion of the wafer support element 40 at a first radial distance D1 from the rotational axis 42 of the wafer support element.

公开(公告)号：EP2659026A1

公开(公告)日：2013-11-06

申请号：EP11811464.4

申请日：2011-12-21

Applicant: Veeco Instruments Inc.

Inventor： MITROVIC, Bojan ,  WEI, Guanghua ,  ARMOUR, Eric, A. ,  PARANJPE, Ajit

IPC: C23C16/455 ,  C23C16/458 ,  H01L21/687

CPC classification number: C23C16/4585 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45591 ,  C23C16/4584 ,  C23C16/46 ,  C30B25/165 ,  C30B29/06 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

Abstract: Apparatus for treating wafers using a wafer carrier rotated about an axis is provided with a ring which surrounds the wafer carrier during operation. Treatment gasses directed onto a top surface of the carrier flow outwardly away from the axis over the carrier and over the ring, and pass downstream outside of the ring. The outwardly flowing gasses form a boundary over the carrier and ring. The ring helps to maintain a boundary layer of substantially uniform thickness over the carrier, which promotes uniform treatment of the wafers.

公开(公告)号：EP2630649A2

公开(公告)日：2013-08-28

申请号：EP11834932.3

申请日：2011-10-17

Applicant: Veeco Instruments Inc.

Inventor： HANSEN, Dennis ,  DEAKINS, James ,  CAMUS, Curtis

IPC: H01J37/08

CPC classification number: H01J37/3053 ,  H01J37/24 ,  H01J2237/08 ,  H02H3/247

Abstract: The presently disclosed technology provides a responsive ion beam source power supply system (200, 300, 400) capable of handling fault events without relying on conventional protection circuitry (e.g., fuses and breakers) so that physical power supply hardware intervention by a user is minimized for typical fault conditions and the ion beam source power supply system (200, 300, 400) may recover automatically after experiencing a fault condition. The presently disclosed technology further discloses an ion beam source power supply system (200, 300, 400) capable of detecting and diagnosing fault states, autonomously implementing command decisions to preserve or protect the function of other ion source modules or sub-systems, and/or mitigating or recovering from the disruptive fault event and returning the ion beam source system (100) to desired user settings.

公开(公告)号：EP2625305A2

公开(公告)日：2013-08-14

申请号：EP11831447.5

申请日：2011-10-04

Applicant: Veeco Instruments Inc.

Inventor： KAMEYAMA, Ikuya

IPC: C23C14/46 ,  C23C14/34

CPC classification number: C23C14/46 ,  H01J27/024 ,  H01J37/08 ,  H01J2237/0656 ,  H01J2237/083 ,  H01J2237/3142 ,  H01J2237/3151 ,  H01J2237/31701

Abstract: Non-elliptical ion beams (508) and plumes (510) of sputtered material can yield a relatively uniform wear pattern on a destination target (504) and a uniform deposition of sputtered material on a substrate assembly (506). The non-elliptical ion beams (508) and plumes (510) of sputtered material impinge on rotating destination targets (504) and substrate assemblies (506). A first example ion beam grid (302) and a second example ion beam grid (304) each have patterns of holes with an offset between corresponding holes. The quantity and direction of offset determines the quantity and direction of steering individual beamlets passing through corresponding holes in the first and second ion beam grids (302, 304). The beamlet steering as a whole creates a non-elliptical current density distribution within a cross- section of an ion beam (508) and generates a sputtered material plume (510) that deposits a uniform distribution of sputtered material onto a rotating substrate assembly (506).

公开(公告)号：EP2321444B1

公开(公告)日：2013-07-24

申请号：EP09806957.8

申请日：2009-08-11

Applicant: Veeco Instruments Inc.

Inventor： PRIDDY, Scott, W.

IPC: C23C14/24 ,  H05B3/08 ,  H01R13/24

CPC classification number: C23C14/243 ,  C23C14/0623

公开(公告)号：EP2603927A1

公开(公告)日：2013-06-19

申请号：EP11746088.1

申请日：2011-08-04

Applicant: Veeco Instruments Inc.

Inventor： VOLF, Boris ,  RASHKOVSKY, Yuliy

IPC: H01L21/687

CPC classification number: H01L21/68764 ,  C23C16/4586 ,  H01L21/68728 ,  H01L21/68771

Abstract: A wafer carrier (32) used in wafer treatments such as chemical vapor deposition has pockets (40,240) for holding the wafers and support surfaces for supporting the wafers above the floors of the pockets. The carrier is provided with locks (50,250) for restraining wafers against upward movement away from the support surfaces (56, 254). Constraining the wafers against upward movement limits the effect of wafer distortion on the spacing between the wafer and the floor surfaces, and thus limits the effects of wafer distortion on heat transfer. The carrier may include a main portion (38) and minor portions (44) having higher thermal conductivity than the main portion, the minor portions being disposed below the pockets.