公开(公告)号：EP2184287A1

公开(公告)日：2010-05-12

申请号：EP09174738.6

申请日：2009-11-02

申请人： Air Products and Chemicals, Inc.

发明人： Lei, Xinjian ,  Spence, Daniel P. ,  Norman, John Anthony Thomas ,  Ulman, Michael

IPC分类号： C07F3/00 ,  C23C16/18

CPC分类号： C07C225/14 ,  C23C16/403 ,  C23C16/404

摘要： This invention is related to Group 2 metal-containing polydentate β-ketoiminate precursors and compositions comprising Group 2 metal-containing polydentate β-ketoiminate precursors, wherein the polydentate β-ketoiminate precursors incorporate an alkoxy group in the imino portion of the molecule. The compounds and compositions are useful for fabricating metal containing films on substrates such as silicon, metal nitride, metal oxide and other metal layers via chemical vapor deposition (CVD) processes.

摘要翻译： 本发明是将烷氧基中的分子的亚氨基部分与第2族含金属的多齿²酮亚胺盐前体和组合物，包含第2族含金属的多齿²酮亚胺盐前体worin多齿²酮亚胺盐前体。 的化合物和组合物可用于在衬底上制造含金属膜是有用的：如硅，金属氮化物，金属氧化物和其它金属层通过化学气相沉积（CVD）工艺。

公开(公告)号：EP2182088A1

公开(公告)日：2010-05-05

申请号：EP10150011.4

申请日：2003-11-14

申请人： President and Fellows of Harvard College

发明人： Gordon, Roy G. ,  Lim, Booyong S.

IPC分类号： C23C16/06 ,  C23C16/18 ,  C07F19/00 ,  C07C237/00

CPC分类号： C23C16/404 ,  C07C257/14 ,  C23C16/18 ,  C23C16/40 ,  C23C16/403 ,  C23C16/406 ,  C23C16/45553

摘要： Metal films are deposited with uniform thickness and excellent step coverage. Copper metal films were deposited on heated substrates by the reaction of alternating doses of copper(I) NN'-diisopropylacetamidinate vapor and hydrogen gas. Cobalt metal films were deposited on heated substrates by the reaction of alternating doses of cobalt(II) bis(N,N'-diisopropylacetamidinate) vapor and hydrogen gas. Nitrides and oxides of these metals can be formed by replacing the hydrogen with ammonia or water vapor, respectively. The films have very uniform thickness and excellent step coverage in narrow holes. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices.

摘要翻译： 金属膜沉积均匀厚度和优异的台阶覆盖。 通过交替剂量的铜（I）NN'-二异丙基乙酰胺化物蒸气和氢气的反应，将铜金属膜沉积在加热的基底上。 通过交替剂量的双（N，N'-二异丙基乙酰胺基）二（N，N'-二异丙基乙酰胺）钴和二氧化碳气体的反应，将钴金属膜沉积在加热的基底上。 这些金属的氮化物和氧化物可以通过分别用氨或水蒸汽代替氢来形成。 薄膜具有非常均匀的厚度和在窄孔中具有优异的台阶覆盖。 合适的应用包括微电子学中的电互连和磁信息存储设备中的磁阻层。

公开(公告)号：EP1995347A4

公开(公告)日：2010-04-28

申请号：EP06782219

申请日：2006-07-27

申请人： JSR CORP

发明人： SAKAI TATSUYA ,  MATSUKI YASUO ,  KAWAGUCHI KAZUO

IPC分类号： C23C16/18 ,  H01L21/285

CPC分类号： C23C16/16 ,  C23C16/4485 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873

公开(公告)号：EP2118336A1

公开(公告)日：2009-11-18

申请号：EP07870070.5

申请日：2007-12-28

申请人： 3M Innovative Properties Company

发明人： STROBEL, Mark, A. ,  ULSH, Michael, J. ,  LYONS, Christopher, S. ,  INVIE, Judith, M.

IPC分类号： C23C16/448 ,  C23C16/02 ,  C23C16/18 ,  C23C16/56 ,  C23C28/00

CPC分类号： C23C16/56 ,  B05D3/08 ,  B05D5/083 ,  C23C14/562 ,  C23C14/5853 ,  C23C16/18 ,  C23C16/545

摘要： A method for forming an inorganic or hybrid organic/inorganic layer on a substrate, which method comprises applying a metal alkoxide to form a layer atop the substrate and exposing the metal alkoxide layer to heat from a catalytic combustion heater in the presence of water to cure the layer is provided.

摘要翻译： 一种在基材上形成无机或杂化有机/无机层的方法，该方法包括施加金属醇盐以在基材的顶部形成层，并在水存在下使金属醇盐层从催化燃烧加热器中加热固化以固化 该层被提供。

公开(公告)号：EP1759410A4

公开(公告)日：2009-10-21

申请号：EP05746562

申请日：2005-05-09

申请人： PRAXAIR TECHNOLOGY INC

发明人： ZHANG DELONG ,  HOOVER CYNTHIA A

IPC分类号： C07F9/00 ,  C23C16/18 ,  C23C16/34 ,  H01L21/285 ,  H01L21/31 ,  H01L21/44 ,  H01L21/469

CPC分类号： C07F9/005 ,  C23C16/34 ,  H01L21/28562

公开(公告)号：EP2083096A1

公开(公告)日：2009-07-29

申请号：EP09151404.2

申请日：2009-01-27

申请人： Air Products and Chemicals, Inc.

发明人： Xiao, Manchao

IPC分类号： C23C16/18 ,  C23C16/30 ,  C23C16/455

CPC分类号： C23C16/18 ,  C07F9/902 ,  C23C16/30 ,  C23C16/305 ,  C23C16/45553

摘要： The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silylantimony precursor is used as a source of antimony for the alloy film. Silylantimony compounds are also disclosed.

摘要翻译： 本发明是使用选自原子层沉积和化学气相沉积的方法制备锗 - 锑 - 碲合金膜的方法，其中使用甲硅烷基锑前体作为合金膜的锑源。 还公开了肟基化合物。

公开(公告)号：EP2065364A1

公开(公告)日：2009-06-03

申请号：EP08170027.0

申请日：2008-11-26

申请人： Air Products and Chemicals, Inc.

发明人： Lei, Xinjian ,  Spence, Daniel P. ,  Cheng, Hansong

IPC分类号： C07C251/04 ,  C07C251/08 ,  C23C16/00 ,  C23C16/18 ,  C23C16/40

CPC分类号： C23C16/18 ,  C07F3/003 ,  C23C16/403 ,  C23C16/404 ,  C23C16/405 ,  C23C16/406

摘要： Metal-containing complexes of a tridentate beta-ketoiminate, one embodiment of which is represented by the structure:

wherein M is a metal such as calcium, strontium, barium, scandium, yttrium, lanthanum, titanium, zirconium, vanadium, tungsten, manganese, cobalt, iron, nickel, ruthenium, zinc, copper, palladium, platinum, iridium, rhenium, osmium; R 1 is selected from alkyl, alkoxyalkyl, fluoroalkyl, cycloaliphatic, and aryl, having 1 to 10 carbon atoms; R 2 is selected from hydrogen, alkyl, alkoxy, cycloaliphatic, and aryl; R 3 is linear or branched selected from alkyl, alkoxyalkyl, fluoroalkyl, cycloaliphatic, and aryl; R 4 is a branched alkyl or alkylene bridge with at least one chiral center; R 5-6 are individually linear or branched selected from alkyl, fluoroalkyl, cycloaliphatic, aryl, and can be connected to form a ring containing carbon, oxygen, or nitrogen atoms; n is an integer equal to the valence of the metal M.

摘要翻译： 三齿β-酮亚胺的金属络合物，其一个实施方案由以下结构表示：其中M是金属如钙，锶，钡，钪，钇，镧，钛，锆，钒，钨，锰， 钴，铁，镍，钌，锌，铜，钯，铂，铱，铼，锇; R 1选自具有1至10个碳原子的烷基，烷氧基烷基，氟烷基，脂环族和芳基; R 2选自氢，烷基，烷氧基，脂环族和芳基; R 3是直链或支链的，选自烷基，烷氧基烷基，氟烷基，脂环族和芳基; R 4是具有至少一个手性中心的支链烷基或亚烷基桥; R 5-6各自为直链或支链，选自烷基，氟烷基，脂环族，芳基，并且可以连接形成含有碳，氧或氮原子的环; n是等于金属M的化合价的整数。

公开(公告)号：EP1717341A4

公开(公告)日：2008-10-01

申请号：EP05709393

申请日：2005-01-27

申请人： KANEKA CORP

发明人： MEGURO TOMOMI ,  FUKUDA SUSUMU ,  YAMAMOTO KENJI

IPC分类号： C23C16/40 ,  C23C16/18 ,  H01L31/18

CPC分类号： C23C16/407 ,  H01L31/076 ,  H01L31/1884 ,  Y02E10/548

摘要： A process for easily producing with high uniformity a transparent conductive film composed mainly of zinc oxide that exhibits high transmission and low resistance and has excellent surface configuration by the use of an inexpensive dilution gas; and a process for producing a tandem thin-film photoelectric converter in which the above process is included. There is provided a process for producing a transparent conductive film, comprising, while introducing an organic zinc, a dilution gas and an oxidizer into a film forming chamber, forming a transparent conductive film composed mainly of zinc oxide on a substrate disposed in the film forming chamber, characterized in that the dilution gas is hydrogen. As hydrogen has a high thermal conductivity and is cheap, there can be provided a transparent conductive film of low cost excelling in performance.

公开(公告)号：EP1887012A2

公开(公告)日：2008-02-13

申请号：EP07113249.2

申请日：2007-07-26

申请人： Rohm and Haas Electronic Materials LLC

发明人： Shenai-Khatkhate, Deodatta Vinayak ,  Wang, Qing Min

IPC分类号： C07F9/50 ,  C07F17/02 ,  C23C16/18 ,  C23C16/455

CPC分类号： C07F17/02 ,  C07F9/5045 ,  C23C16/34 ,  C23C16/40

摘要： Organometallic compounds containing a phosphoamidinate ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.

摘要翻译： 提供了含有磷酰胺化物配体的有机金属化合物。 这些化合物特别适用于气相沉积前体。 还提供了使用这种化合物沉积薄膜的方法，例如通过ALD和CVD。

公开(公告)号：EP1292970A4

公开(公告)日：2007-12-19

申请号：EP01937028

申请日：2001-06-08

申请人： GENITECH INC

发明人： KOH WON YONG ,  LEE CHUN SOO

IPC分类号： C23C16/18 ,  C23C16/34 ,  C23C16/36 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/515 ,  H01L21/283 ,  H01L21/285 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L21/205

CPC分类号： C23C16/4554 ,  C23C16/34 ,  C23C16/36 ,  C23C16/40 ,  C23C16/403 ,  C23C16/405 ,  C23C16/409 ,  C23C16/515 ,  H01L21/31691

摘要： A method for forming thin films of a semiconductor device is provided. The thin film formation method presented here is based upon a time-divisional process gas supply in a chemical vapor deposition (CVD) method where the process gases are supplied and purged sequentially, and additionally plasma is generated in synchronization with the cycle of pulsing reactant gases. A method of forming thin films that possess a property of gradient composition profile is also presented.