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513 条记录 (耗时 0.016 秒)

    Charge-coupled device and camera comprising such a charge-coupled device
    75.
    发明公开
    Charge-coupled device and camera comprising such a charge-coupled device 失效
    Ladungsgekoppelte Anordnung und diese Anordnung umfassende Kamera。

    公开(公告)号：EP0200270A1

    公开(公告)日：1986-11-05

    申请号：EP86200710.1

    申请日：1986-04-25

    申请人： Philips Electronics N.V.

    发明人： Theuwissen, Albert Joseph Pierre

    IPC分类号： H04N3/15 ,  G11C27/04 ,  H01L27/14

    CPC分类号： G11C27/04 ,  H01L27/14831 ,  H04N5/335 ,  H04N5/3725 ,  H04N5/3765

    摘要： The invention relates to a charge-coupled device, more particularly a sensor of the so-called accordion principle, in which the charge packets are stored with a very high density and, in order to prevent signal mixing, are transported with a lower density. The logic circuits required for driving the sensor is integrated in the chip itself.

    摘要翻译： 本发明涉及一种电荷耦合器件，特别是一种由所谓的手风琴原理操作的传感器，其中以非常高的密度存储电荷包。 为了防止信号混合，电荷袋以较低的密度输送。 驱动传感器所需的逻辑电路集成在芯片本身中。

    Solid state image sensing device and method for making the same
    76.
    发明公开
    Solid state image sensing device and method for making the same 失效
    固态图像感测装置及其制造方法

    公开(公告)号：EP0178664A3

    公开(公告)日：1986-10-15

    申请号：EP85113198

    申请日：1985-10-17

    申请人： Matsushita Electronics Corporation

    发明人： Kuroda, Takao ,  Kuriyama, Toshihiro ,  Horii, Kenju ,  Mizuno, Hiroyuki

    IPC分类号： H01L27/14

    CPC分类号： H01L27/14887 ,  H01L27/14831

    摘要： In a solid state image sensing device of p-conductivity type well, photo-electro converting region (1) are configurated to have larger area as depth increases, so that excessive electric charges generated in the p-conductivity type well are easily transferred from expanded peripheral parts (7) at the bottom (1b) to channel (3), without being undesirably transferred downward through thin p-conductivity type region (6) to substrate (4), and smear electric charges which has been generated in a thin p-conductivity type well under the photo-electro converting region (1) in the conventional device is suppressed, to effectively decrease the smear phenomenon.

    Charge-coupled image sensor arrangement
    77.
    发明公开
    Charge-coupled image sensor arrangement 失效
    充电耦合图像传感器布置

    公开(公告)号：EP0193977A3

    公开(公告)日：1986-10-01

    申请号：EP86200157

    申请日：1986-02-05

    申请人： N.V. Philips' Gloeilampenfabrieken

    发明人： Esser, Leonard Jan Maria ,  Pelgrom, Marcellinus Johannes Maria

    IPC分类号： H04N03/15 ,  H01L27/14

    CPC分类号： H04N5/3765 ,  H01L27/14831

    摘要： @ The invention relates to a charge-coupled image sensor of the line transfer type comprising a number of parallel lines (2-6) which are each constituted by an n-phase CCD. An electrode (12-16) of each CCD is arranged parallel to this CCD separately for each CCD. The other (n-1) electrodes (17-20) extend transversely to the charge transport direction over all CCD's. The first-mentioned electrode (12-16) is used as a selection gate and is moreover used, depending upon the applied voltage, as an integration gate or as a blocking gate during the integration period.

    Charge coupled device
    78.
    发明公开
    Charge coupled device 失效
    电荷耦合器件

    公开(公告)号：EP0185990A1

    公开(公告)日：1986-07-02

    申请号：EP85115404.7

    申请日：1985-12-04

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Yamada, Tetsuo c/o Patent Division

    IPC分类号： H01L29/78 ,  H01L29/10 ,  H01L27/14

    CPC分类号： H01L29/76858 ,  H01L27/14831 ,  H01L29/1062 ,  H01L29/76841

    摘要： A charge coupled device includes a transfer channel (32) having an n-type region (32A) formed in the surface area of a p-type silicon substrate (30) and a plurality of electrodes formed over and insulated from the transfer channel (32) and arranged in the direction in which the transfer channel extends. The charge coupled device further includes an n + -type region (32B) formed in the n-type region (32A) with an impurity concentration higher than that of the region (32A).

    摘要翻译： 一种电荷耦合器件包括具有形成在p型硅衬底（30）的表面区域中的n型区域（32A）的传输沟道（32），以及形成在传输沟道（32）上并与之绝缘的多个电极 ）并且沿着传送通道延伸的方向布置。 电荷耦合器件还包括形成在n型区域（32A）中的杂质浓度高于区域（32A）的n +型区域（32B）。

    Background subtraction in a charge transfer device; method and apparatus thereof
    79.
    发明公开
    Background subtraction in a charge transfer device; method and apparatus thereof 失效
    电荷转移装置中的背景技术; 方法和装置

    公开(公告)号：EP0092926A3

    公开(公告)日：1985-12-18

    申请号：EP83301993

    申请日：1983-04-08

    申请人： The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and

    发明人： Ballingall, Ronald Alexander ,  Frier, Alistair Arthur Grant

    IPC分类号： H01L27/14 ,  H01L29/78 ,  H04N03/15

    CPC分类号： H01L29/76808 ,  H01L27/14831 ,  H01L27/14881 ,  H04N5/33

    摘要： In a charge transfer device (Figure 1) an auxiliary charge store and gate (G A ) is provided adjacent to the devices input (9) - ie adjacent to the device source (S), or to the device first store (beneath G s ), or to both. In order to provide background subtraction, charge is transferred back and forth. under auxiliary gate control, between the device input (9) and the auxiliary store (beneath G A ) many times during each period of charge integration and a fixed increment of charge is removed for each such transfer. The total charge subtracted each integration period is dependent on the number of transfers; this latter is determined by the frequency of a control signal applied to the auxiliary gate (G A ). This frequency may be set manually, or may be servoed by output circuitry in order to set an automatic adaptive threshold.

    摘要翻译： 在电荷转移装置中，辅助电荷存储器和栅极（GA）被提供为邻近器件输入（9） - 即与器件源（S）相邻，或设备第一存储（GS下）或两者。 为了提供背景减法，在电荷积分的每个周期期间，在辅助门控制下，在器件输入（9）和辅助存储器（在GA之下）多次传送电荷，并且消除固定的电荷增量 对于每个这样的转移。 每个积分周期减去总费用取决于转移次数; 后者由施加到辅助门（GA）的控制信号的频率确定。 该频率可以手动设置，也可以由输出电路进行伺服以设定自动适应阈值。

    Charge-coupled semiconductor device with dynamic control
    80.
    发明公开
    Charge-coupled semiconductor device with dynamic control 失效
    Ladungsgekoppelte Halbleiteranordnung mit dynamischer Steuerung。

    公开(公告)号：EP0161023A1

    公开(公告)日：1985-11-13

    申请号：EP85200579.2

    申请日：1985-04-16

    申请人： Philips Electronics N.V.

    发明人： Boudewijns, Arnoldus Johannes J. ,  Esser, Leonard Jan Maria

    IPC分类号： H04N3/15 ,  G11C19/28 ,  G11C27/00 ,  H01L27/14

    CPC分类号： H01L27/14831 ,  G11C19/282 ,  G11C19/285 ,  G11C27/00 ,  H04N5/3725 ,  H04N5/3765

    摘要： In a CCD, especially in an image sensor device, the information density can be doubled in that the electrodes (21, 22, 31, 32...) are switched separately between a clock signal and a reference signal. Clock signals and reference signals are obtained as output signals of a shift register (13) controlled by a multi-phase clock, which is realized, for example, in C-MOS technology. Information at the input terminal (107) of the first stage (101) of the shift register (13) determines, after having been passed on or not having been passed on depending upon the clock pulse signals of the register clock, the output signal of the next stages (101) of the shift register (13) and hence the voltage variation at the electrodes (21, 22, 31, 32...) connected to the outputs (113) of the stages (101).

    摘要翻译： 在CCD中，特别是在图像传感器装置中，通过在时钟信号和参考信号之间顺序地切换电极，可以使信息密度加倍。 获得时钟信号和参考信号作为由单相或多相时钟控制的移位寄存器的输出信号。 例如，使用C-MOS技术提供寄存器。 信号在移位寄存器的第一级的输入端与寄存器时钟的时钟脉冲信号相结合，确定移位寄存器的下一级的输出信号。 因此，这些输入信号确定连接到寄存器级的输出的电极处的电压变化。