Abstract:
L'invention concerne un amplificateur cascode comportant au moins deux étages déphaseurs commandables (7 j ) entre un transistor d'entrée (M61) dont une borne de commande est connectée à une borne d'entrée (62) de l'amplificateur, et une borne de sortie (66) de l'amplificateur.
Abstract:
The present invention concerns an amplifying device arranged to receive an input signal having a certain duty cycle. The amplifying device comprise a first switching unit having an input terminal adapted to receive a first half of the input signal, and an output terminal adapted to be connected to a first signal output where a first half of an output signal is provided. The amplifying device comprise a second switching unit having an input terminal adapted to receive a second half of the input signal and an output terminal adapted to be connected to a second signal output where a second half of the output signal is provided. Also, the first switching unit and the second switching units are adapted to receive an input signal, wherein the first half of said input signal has the same duty cycle as the second half of the input signal but shifted in phase. The present invention also concerns a wireless transceiver and a radio transmission device.
Abstract:
A receiver circuit includes an attenuator that receives a received signal and attenuates the received signal, a DC level shifter that shifts a DC level of an attenuated signal from the attenuator, an amplifier section that has frequency characteristics of a band-pass filter and amplifies a signal from the DC level shifter that has been shifted with respect to the DC level, and a control circuit that controls an attenuation of the attenuator based on a signal output from the amplifier section. The control circuit controls the attenuation of the attenuator by changing filter characteristics of the attenuator corresponding to an amplitude of the signal output from the amplifier section so that the signal output from the amplifier section has a constant amplitude even when an amplitude of the received signal has changed.
Abstract:
An amplifier having a two different single crystal semiconductor substrates. A first one of the substrates has formed thereon at least one input signal amplifying device, such device comprising a bipolar transistor. A second one of the substrates is a material different from the material of the first substrate. A current mirror is included. The current mirror includes a plurality of electrically interconnected active devices, one portion of the devices being bipolar devices formed on the first substrate and another portion of the active devices comprising an insulated gate field effect transistor formed on the second substrate. The first single crystal substrate is III-IV material and the second single crystal substrate is silicon. The bipolar devices are HBTs. The insulated gate field effect transistor is a MOS device. This configuration minimizes the effect of temperature, voltage and process variations on critical transistor operating currents.
Abstract:
This amplifier (10) for radio frequency signals comprises a circuit adapted to amplify the signals within a first range of frequency (19) and is characterized in that said circuit is also adapted to simultaneously attenuate the signals within a second range of frequency. (18)
Abstract:
An antenna device for a portable radio communication device adapted for receiving radio signals comprises a radiating element (10) and an amplifier stage (30) with a transistor (31) with a gate, a source, and a drain, said transistor having a minimum noise figure below 1 dB and a gain above 15 dB in the first operating frequency band. The source of the transistor is connected directly to ground. By providing a transistor with these characteristics in this way, stable operation is achieved with high gain amplification.
Abstract:
In order to improve the performances of an amplifier across a broad range of frequencies, the input matching network (16), and optionally the output matching network (36), comprise/s a plurality of individually selectable sub networks. Each sub network comprises a switching element (S1-S3) and a matching element (M1-M3) comprising preferably a capacitor. Depending on the desired operating frequency, one of the switching elements is turned ON while the other switching elements remain OFF. To improve the efficiency, it is furthermore suggested to regulate (18) the supply voltage and/or bias voltage of the amplifying transistor (14) in response to the detected (20) envelope signal of the input signal to be amplified.
Abstract:
The present invention relates to an amplifier and, more particularly, to an adaptive linear amplifier (200) with low power consumption and a high linearity. The adaptive linear amplifier (200) according to the present invention comprises amplification means (210) and a bias controller (230). The amplification means (210) comprises a main transistor (MN 21 ) and an auxiliary transistor unit (211). The main transistor (MN 21 ) and the auxiliary transistor unit (211) are coupled to each other. The bias controller (230) controls a bias Voltage applied to the main transistor (MN 21 ) and the auxiliary transistor unit (211).
Abstract:
Embodiments of the present invention include circuits for use in wireless receivers that provide wide band matching with improved gain and noise performance. In one embodiment, the present invention includes a wireless receiver comprising an antenna, a first transistor having a source coupled to the antenna, a second transistor having a gate coupled to the antenna and a network comprising a first terminal coupled to the antenna, a second terminal coupled to the source of the first transistor and a third terminal coupled to the gate of the second transistor, wherein the network has a transimpedance between the second and third terminals so that noise generated by the first transistor is differentially rejected by the system across a predetermined range of frequencies.