公开(公告)号：EP1570953A4

公开(公告)日：2007-04-25

申请号：EP03756617

申请日：2003-10-15

申请人： JAPAN SCIENCE & TECH AGENCY ,  UNIV NAGOYA NAT UNIV CORP ,  SINTOKOGIO LTD

发明人： SAKA HIROYASU ,  MOON WON-JIN ,  UCHIMURA SHOUJI ,  ITO TOSHIRO

IPC分类号： B24C1/10 ,  C04B35/10 ,  C04B41/53 ,  C04B41/91 ,  C23C30/00

CPC分类号： C04B41/009 ,  B24C1/10 ,  C04B41/53 ,  C04B41/91 ,  C04B35/10 ,  C04B35/00 ,  C04B35/565 ,  C04B35/584 ,  C04B35/581

摘要： A method for improving the toughness of the surface of a ceramic article, characterized in that the ceramic article is subjected to a plastic working wherein a dislocated structure is formed on the surface thereof, the structure being in a straight line form and covering uniformly over the whole of the ceramic article and having a dislocation density of 1 X 104 to 9 X 1013 cm-2, by the use of a jet material comprising fine particles having a convexly curved surface and having an average particle size of 0.1 μm to 200 μm and a Vickers hardness (HV) of 500 or more and of a hardness (HV) of the ceramic article + 50 or less; and a ceramic article which has a dislocated structure being in a straight line form and covering uniformly over the whole of the surface thereof and having a dislocation density of 1 X 104 to 9 X 1013 cm-2.

公开(公告)号：EP1191001B1

公开(公告)日：2006-05-17

申请号：EP01307739.1

申请日：2001-09-11

申请人： Camco International (UK) Limited

发明人： Griffin, Nigel Dennis ,  Hughes, Peter Raymond ,  Matthias, Terry R.

IPC分类号： C04B35/52 ,  C04B41/53 ,  B23B27/14 ,  B23B27/20 ,  E21B10/60

CPC分类号： B22F7/06 ,  B22F2003/244 ,  B22F2005/001 ,  B22F2998/00 ,  B22F2999/00 ,  B23B27/145 ,  C04B35/645 ,  C04B37/001 ,  C04B41/009 ,  C04B41/459 ,  C04B41/53 ,  C04B41/81 ,  C04B41/91 ,  C04B2237/36 ,  C04B2237/363 ,  E21B10/006 ,  E21B10/43 ,  E21B10/5673 ,  E21B10/5676 ,  E21B10/5735 ,  E21B10/602 ,  E21B2010/566 ,  C04B41/4539 ,  C04B41/5001 ,  C04B41/4564 ,  C04B41/5144 ,  C04B35/5626 ,  C04B35/52 ,  B22F2207/03 ,  B22F1/0014 ,  C22C26/00

公开(公告)号：EP1158576A3

公开(公告)日：2004-11-24

申请号：EP01112800.6

申请日：2001-05-28

申请人： Tokyo Electron Limited

发明人： Yamamoto, Hiroyuki, c/o Tokyo Electron Tohoku Ltd. ,  Nishimura, Kazuaki, c/o Tokyo Electron Tohoku Ltd. ,  Hasebe, Kazuhide, c/o Tokyo Electron Ltd. ,  Spaull, Phillip, c/o Tokyo Electron Tohoku Ltd.

IPC分类号： H01L21/311 ,  H01L21/00 ,  C04B41/53 ,  H01L21/316 ,  C23F4/00

CPC分类号： C04B41/009 ,  C04B41/5346 ,  C04B41/91 ,  C04B2111/00844 ,  C23C16/4405 ,  C23F4/00 ,  H01L21/31122 ,  C04B35/465 ,  C04B35/468 ,  C04B35/47

摘要： The present invention is directed to a method of etching a compound metal oxide film containing plural kinds of metallic element, such as Ba, Sr, Ti or the like. A first cleaning step employing Cl 2 gas is carried out in order to remove alkaline earth metal (Ba, Sr) from the film, then a second cleaning step employing ClF 3 gas is carried out in order to remove a metal (Ti) other than the alkaline earth metal from the film. The etching method is applicable not only to the etching process in the semiconductor manufacturing but also to the cleaning process for cleaning the processing vessel for film deposition.

摘要翻译： 本发明涉及一种蚀刻含有多种金属元素如Ba，Sr，Ti等的复合金属氧化物膜的方法。 为了从膜中除去碱土金属（Ba，Sr），进行使用Cl 2气体的第一清洗步骤，然后进行使用ClF 3气体的第二清洗步骤，以除去碱性以外的金属（Ti） 地球金属从电影。 蚀刻方法不仅适用于半导体制造中的蚀刻工艺，而且适用于清洗用于膜沉积的处理容器的清洁工艺。

公开(公告)号：EP1070562A4

公开(公告)日：2004-11-24

申请号：EP99906536

申请日：1999-02-26

申请人： SUMITOMO ELECTRIC INDUSTRIES

发明人： KANADA YASUYUKI ,  KURODA YOSHIHIRO ,  YAMAZAKI NOBORU ,  OGATA YASUNOBU ,  TOMITA KUNIHIRO ,  NAKAI TETSUO ,  ABE MAKOTO

IPC分类号： C04B41/49 ,  C04B41/50 ,  C04B41/52 ,  C04B41/53 ,  C04B41/84 ,  C04B41/85 ,  C04B41/87 ,  C04B41/89 ,  C04B41/91 ,  C22C26/00 ,  C23C30/00 ,  B23B27/20 ,  B22F3/24 ,  B23B27/18

CPC分类号： C04B41/009 ,  B22F2998/00 ,  C04B41/4961 ,  C04B41/5035 ,  C04B41/5059 ,  C04B41/5066 ,  C04B41/5096 ,  C04B41/52 ,  C04B41/5353 ,  C04B41/84 ,  C04B41/85 ,  C04B41/87 ,  C04B41/89 ,  C04B41/91 ,  C22C26/00 ,  C22C2204/00 ,  C23C30/005 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30 ,  Y10T428/31678 ,  C04B41/4521 ,  C04B41/4545 ,  C04B41/4531 ,  C04B35/52 ,  B22F2207/03

摘要： A sintered diamond tool which is excellent in resistance to deposition and to breakage and has high strength. A sintered diamond tool (20) comprises a tool substrate (22) comprising sintered diamond and a surface layer (21) formed on the surface of the tool substrate (22). The surface layer (21) comprises at least one of silicon, an oxide of silicon, a carbide of silicon, a nitride of silicon and a solid solution thereof. The tool substrate (22) comprises an internal part (22b) which contains an iron group metal in a first content and a surface part (22a) which surrounds the internal part (22) and contains an iron group metal in a second content being lower than the first content.

公开(公告)号：EP1331212A1

公开(公告)日：2003-07-30

申请号：EP03000590.4

申请日：2003-01-14

申请人： Nutrinova Nutrition Specialties & Food Ingredients GmbH

发明人： Wetzel, Ariane ,  Iven, Britta

IPC分类号： C04B41/53

CPC分类号： C04B41/46 ,  A01N37/06 ,  C04B2111/2092

摘要： Wässrige Lösungen von Alkali- oder Erdalkalisalzen der Sorbinsäure, insbesondere von Kaliumsorbat, eignen sich sehr gut zur umweltfreundlichen Beseitigung oder Verhinderung von Belägen auf mineralischen Oberflächen wie Stein- , Keramik-, Beton- oder Mörteloberflächen, die durch oder nach Algenbewuchs dort auftreten.

摘要翻译： 在表面上的沉积物被去除或用山梨酸（S）和它的盐定位表面防止。

公开(公告)号：EP1318969A1

公开(公告)日：2003-06-18

申请号：EP01965404.5

申请日：2001-09-05

申请人： Camco International (UK) Limited

发明人： GRIFFIN, Nigel, Dennis ,  HUGHES, Peter, Raymond

IPC分类号： C04B35/32 ,  C04B41/53 ,  B23B27/14 ,  E21B10/50

CPC分类号： B22F7/06 ,  B22F2003/244 ,  B22F2005/001 ,  B22F2998/00 ,  B22F2999/00 ,  B23B27/145 ,  C04B35/52 ,  C04B35/6303 ,  C04B37/021 ,  C04B37/026 ,  C04B41/009 ,  C04B41/459 ,  C04B41/53 ,  C04B41/81 ,  C04B41/91 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/405 ,  C04B2235/427 ,  C04B2235/442 ,  C04B2235/5436 ,  C04B2235/5481 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6587 ,  C04B2237/123 ,  C04B2237/363 ,  C04B2237/40 ,  C04B2237/401 ,  C04B2237/52 ,  C04B2237/55 ,  C04B2237/582 ,  C04B2237/586 ,  C04B2237/704 ,  C04B2237/76 ,  E21B10/006 ,  E21B10/43 ,  E21B10/5673 ,  E21B10/5676 ,  E21B10/5735 ,  E21B10/602 ,  E21B2010/566 ,  C04B41/4539 ,  C04B41/5001 ,  C04B41/4564 ,  C04B41/5144 ,  B22F2207/03 ,  B22F1/0014 ,  C22C26/00

摘要： Disclosed is a polycrystalline diamond or diamond-like element with greatly improved wear resistance without loss of impact strength. These elements are formed with a binder-catalyzing material in a high-temperature, high-pressure (HTHP) process. The PCD element has a body with a plurality of bonded diamond or diamond-like crystals forming a continuous diamond matrix that has a diamond volume density greater than 85 %. Interstices among the diamond crystals form a continuous interstitial matrix containing a catalyzing material. The diamond matrix table is formed and integrally bonded with a metallic substrate containing the catalyzing material during the HTHP process. The diamond matrix body has a working surface, where a portion of the interstitial matrix in the body adjacent to the working surface is substantially free of the catalyzing material, and the remaining interstitial matrix contains the catalyzing material. Typically, less than about 70 % of the body of the diamond matrix table is free of the catalyzing material.

公开(公告)号：EP1105920A1

公开(公告)日：2001-06-13

申请号：EP99934886.5

申请日：1999-07-20

申请人： The Secretary of State for Defence

发明人： EASON, Robert William ,  BARRY, Ian Eric ,  SMITH, Peter George Robin ,  ROSS, Graeme William

IPC分类号： H01L21/306 ,  C30B33/08 ,  C04B41/53

CPC分类号： H01L21/30635 ,  C30B29/30 ,  C30B33/00

摘要： A method of selectively etching a substrate ( 1 ) comprises applying etchant ( 4 ) at a surface of the substrate and illuminating an area of the surface with light from a light source ( 7 ), whereby etching is at least partially inhibited in the illuminated area ( 18 ) of the substrate. Preferably LiNbO3 is patterned in HF KOH, or HF-HNO3 solutions by selective illumination using UV laser light with 300 to 1000 mn wavelength, thereby allowing for interferometric or holographic structures to be formed.

公开(公告)号：EP0985458A3

公开(公告)日：2000-06-21

申请号：EP99116862.6

申请日：1999-09-03

申请人： Kabushiki Kaisha Hanogumi

发明人： Otsuki, Yoshio

IPC分类号： B08B7/00 ,  E04G23/00 ,  E01H1/00 ,  C04B41/53 ,  B08B6/00

CPC分类号： B08B6/00 ,  B08B7/0014 ,  C04B41/5315 ,  E01H1/00 ,  E01H1/103 ,  E04G23/002

摘要： The present invention has an object to permit efficient and safe cleaning of a stain such as dust or molds produced on the surface of a structure including a building without damaging the cleaning site and the surrounding environment. A method of the invention comprises the steps of spraying an aggregating agent 4 comprising a cationic linear organic polymer onto the surface 2 of such structure 1 having a stain 3 produced thereon, dissociating the stain particles by use of Coulomb force f generated between the stain particles and the aggregating agent, displacing slightly the stain particles along the surface of the structure 1 to cause peeling thereof from the surface to be cleaned 2, and simultaneously, aggregating the same for cleaning. Another object of the invention is to maintain water permeability of a road (11) by easily eliminating a stain (15) adhering to the surfaces of granular aggregate particles forming a drainage-type pavement layer (12) of a road (11) without the use of various mechanical tools. Another method of the invention comprises the steps of depositing an aggregating agent (13) for soil improvement comprising a cationic organic polymer onto a drainage-type pavement layer (12) of a road (11), and eliminating the aggregated stain particles adhering to the surfaces of the granular aggregate particles constituting the drainage-type pavement layer (12) and settling in voids.

公开(公告)号：EP0968979A1

公开(公告)日：2000-01-05

申请号：EP99112206.0

申请日：1999-06-25

申请人： SIEMENS AKTIENGESELLSCHAFT

发明人： Hintermaier, Frank

IPC分类号： C04B41/53 ,  C09K13/08

CPC分类号： H01L27/11502 ,  C04B41/5353 ,  C09K13/08 ,  H01L21/31111 ,  H01L27/11507 ,  H01L28/55

摘要： An etching solution comprising fluoride and nitric acid is employed to pattern or remove Bi-based oxide ceramics. The etching solution can be mixed with H 2 O to adjust the etch rate. Additionally, inorganic components can be included to increase or decrease the etch rate. Organic components can be included to regulate the wetting/adhesion properties of the etch chemistry.

摘要翻译： 使用包含氟化物和硝酸的蚀刻溶液来图案化或去除Bi基氧化物陶瓷。 蚀刻溶液可与H 2 O混合以调节蚀刻速率。 另外，可以包括无机组分以增加或降低蚀刻速率。 可以包括有机组分以调节蚀刻化学品的润湿/粘附性能。

公开(公告)号：EP0967189A1

公开(公告)日：1999-12-29

申请号：EP99304841.2

申请日：1999-06-21

申请人： NGK INSULATORS, LTD.

发明人： Aihara, Yasufumi ,  Inoue, Katsuhiro

IPC分类号： C04B38/00 ,  C04B41/53 ,  C04B35/573

CPC分类号： C04B38/0058 ,  C04B35/573 ,  C04B2111/90 ,  C04B41/5353

摘要： A highly resistive recrystallized silicon carbide having open pores, wherein layered carbons on the inner wall surfaces of said open pores are removed and a resistivity at room temperature of said recrystallized silicon carbide is not less than 10000 Ω · cm.

摘要翻译： 具有开孔的高电阻的重结晶碳化硅，所述开口孔的内壁表面上worin层状碳被去除，并且在所述的室温下的电阻重结晶碳化硅不小于10000 OMEGA。 厘米。