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81.发明授权
公开(公告)号：EP1363327B1
公开(公告)日：2010-09-08
申请号：EP03002326.1
申请日：2003-02-03
IPC分类号： H01L21/68
CPC分类号： H01L21/6835 , H01L25/0753 , H01L25/167 , H01L2221/68359 , H01L2924/00014 , H01L2924/30105 , H01L2924/30107 , H05K1/148 , H05K3/20 , H01L2224/48 , H01L2924/00
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公开(公告)号：EP1560048B9
公开(公告)日：2009-10-21
申请号：EP04019597.6
申请日：2004-08-18
CPC分类号： G02B6/29335 , G02B6/12007 , G02B6/2746 , G02B2006/12097 , G02B2006/12104 , G02F1/0955 , G02F2203/15
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公开(公告)号：EP1764917B1
公开(公告)日：2009-09-09
申请号：EP06012067.2
申请日：2006-06-12
CPC分类号： H03H3/02 , H03H9/02102 , H03H9/173 , H03H9/584 , H03H9/587 , H03H9/60 , H03H2003/021 , Y10T29/42 , Y10T29/49005
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公开(公告)号：EP1745413B1
公开(公告)日：2009-07-22
申请号：EP05771748.0
申请日：2005-05-04
IPC分类号： G06K9/00
CPC分类号： G01J3/26 , G06K9/00604 , G06K9/2018 , H04N13/254
摘要： An object to be detected is illuminated by a single broadband light source or multiple light sources emitting light at different wavelengths. The light is captured by an imager, which includes a light-detecting sensor covered by a hybrid filter.
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85.发明授权Semiconductor optical modulator having a quantum well structure for increasing effective photocurrent generating capability 有权具有用于增加有效照片发电能力的量子阱结构的半导体光调制器
公开(公告)号：EP1729167B1
公开(公告)日：2009-05-06
申请号：EP06010549.1
申请日：2006-05-22
发明人： Bour, David , Zhu, Jintian
IPC分类号： G02F1/017
CPC分类号： B82Y20/00 , G02F1/01725 , G02F2001/0175 , G02F2001/01758
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公开(公告)号：EP1179858B1
公开(公告)日：2009-03-18
申请号：EP01306793.9
申请日：2001-08-08
发明人： Ng, Kee Yean
IPC分类号： H01L33/00
CPC分类号： H01L33/486 , H01L33/505 , H01L2224/48091 , H01L2224/48257 , H01L2224/48465 , H01L2224/8592 , H01L2933/0041 , H01L2924/00014 , H01L2924/00
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公开(公告)号：EP1452127B1
公开(公告)日：2008-11-19
申请号：EP03023655.8
申请日：2003-10-17
IPC分类号： A61B3/10
CPC分类号： G06K9/00604 , A61B3/113 , A61B5/18 , G06K9/00845 , G08B21/06
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公开(公告)号：EP1750197A3
公开(公告)日：2008-10-29
申请号：EP06253331.0
申请日：2006-06-27
发明人： Depue, Marshall T. , Xie, Tong , Fouquet, Julie E.
IPC分类号： G06F3/033
CPC分类号： G06F3/03543 , G06F2203/0333
摘要： A system for monitoring an ergonomic risk condition of a user includes a hand-held device (10) having a sensor (86) that senses a stress parameter related to the user and generates stress data in response. The system additionally includes a processing unit (50) in communication with the sensor (86). The processing unit (50) determines an ergonomic risk condition in response to the stress data.
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89.发明公开Semiconductor sensor using surface plasmons to increase energy absorption efficiency 审中-公开使用表面等离子体激元的半导体传感器，以增加能量吸收
公开(公告)号：EP1808901A3
公开(公告)日：2008-07-23
申请号：EP06013963.1
申请日：2006-07-05
IPC分类号： H01L31/0352 , H01L31/09 , H01L31/0236
CPC分类号： H01L31/035254 , B82Y20/00 , H01L31/0236 , H01L31/09 , Y02E10/50
摘要： A semiconductor sensor (100) includes a semiconductor layer (102) having an incident surface (104) to receive incident radiant energy (110) on one side of the semiconductor layer (102) and having a corrugated surface on an opposite side of the semiconductor layer (102); and a metal layer (106) having a corrugated surface matching the corrugated surface of the semiconductor layer (102) and contacting the corrugated surface of the semiconductor layer (102) to form a corrugated interface (108) between the semiconductor layer (102) and the metal layer (106). The corrugated interface (108) is substantially parallel to the incident surface (104) of the semiconductor layer (102), and provides an energy absorption path over which the incident radiant energy (110) is absorbed.
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90.发明公开Group IV based semiconductor light emitting device with improved carrier confinement and method of fabricating the same 审中-公开从具有提高的载流子限制和它们的制造方法的第IV族化合物半导体发光器件
公开(公告)号：EP1727214A3
公开(公告)日：2008-04-30
申请号：EP06010198.7
申请日：2006-05-17
发明人： Bahl, Sandeep R. , Rankin, Glenn H.
IPC分类号： H01L33/00
CPC分类号： H01L33/34 , H01L33/0054
摘要： In one aspect, a semiconductor device (10) includes a p-region (12) and an n-region (14). The p-region (12) includes a first Group IV semiconductor that has a bandgap and is doped with a p-type dopant, and a first region (18) of local crystal modifications inducing localized strain that increases the bandgap of the first Group IV semiconductor and creates a conduction band energy barrier against transport of electrons across the p-region (12). The n-region (14) includes a second Group IV semiconductor that has a bandgap and is doped with an n-type dopant, and a second region (20) of local crystal modifications inducing localized strain that increases the bandgap of the second Group IV semiconductor and creates a valence band energy barrier against transport of holes across the n-region (14).
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