摘要:
A piezoelectric oscillation device 1 includes: a piezoelectric vibrator 50 that includes a piezoelectric vibration element 10; a heating element 60 that heats the piezoelectric vibration element 10; an electronic component 62 that is electrically connected to the piezoelectric vibration element 10; a substrate 70 on which the piezoelectric vibrator 50, the heating element 60, and the electronic component 62 are mounted; and a base member 90 to which the substrate 70 is attached with a prescribed spacing therebetween via a substrate holding member 94. The substrate holding member 94 includes a conductive part. The conductive part has a lower thermal conductivity than metal.
摘要:
The invention relates to a BAW resonator with reduced heat build-up. The heat build-up is reduced by a thermal bridge which dissipates heat from the electro-acoustically active region to a support substrate, without impairing the acoustics of the resonator.
摘要:
For a component that operates by means of acoustic waves, the invention proposes the compensation of a negative temperature coefficient of the frequency by the provision of a compensation coating on the component, said coating comprising a material based on a chemical compound of at least two elements, the compound having a negative thermal expansion coefficient.
摘要:
A piezoelectric acoustic resonator with an adjustable temperature compensation capability is disclosed. The piezoelectric acoustic resonator includes: a piezoelectric acoustic reflection structure, a first electrode, a second electrode, a piezoelectric layer between the first electrode and the second electrode, and a temperature compensation layer; wherein the temperature compensation layer is a single-layer temperature compensation layer formed of Si x O y material, or a composite temperature compensation layer formed by stacking material with a positive temperature coefficient of sound velocity and material with a negative temperature coefficient of sound velocity; and the temperature compensation layer is configured to: perform reverse compensation for a temperature frequency shift caused by the first electrode, the piezoelectric layer and the second electrode in the piezoelectric acoustic resonator; wherein x:y is not equal to 1:2.
摘要:
A piezoelectric ceramic whose resonance frequency temperature characteristic can be easily adjusted is provided. A piezoelectric ceramic (2) is comprises first and second parts (11 and 12) which are layers and are alternately stacked. The first and second parts (11 and 12) are each composed of a compound having a bismuth layer structure, such as a complex oxide containing at least Sr, Bi, and Nb, and have degrees of c-axis orientation different from each other. Since the resonance frequency temperature characteristics change according to the degree of orientation, the first and second parts (11 and 12) having different degrees of orientation are adequately combined so that the resonance frequency temperature characteristics of the piezoelectric ceramic (2) as a whole can be easily adjusted.
摘要:
The present invention provides an FBAR device with a means for internally varying a capacitance. The device comprises a bottom electrode and a top electrode, said bottom electrode and said top electrode have an overlap area A, the overlap being defined by the projection of the top electrode onto the bottom electrode in a direction substantially perpendicular to the plane of the bottom electrode. Furthermore, the device comprises a piezoelectric layer in between said bottom electrode and said top electrode and a dielectric layer in between the piezoelectric layer and the bottom electrode. The device also comprises means for reversibly varying an internal impedance of the device. The capacitance may be tuned by either varying the thickness of the dielectric layer, by changing the overlap between the bottom electrode and the top electrode or by shifting a different dielectric material between the electrodes.
摘要:
A piezoelectric resonator element including: a base (51) formed by a piezoelectric material, having a given length; a plurality of vibration arms (35,36) extended from one end of the base; and a supporting arm extended from the other end apart from the one end of the base by the given length to a width direction so as to be extended to a same direction of the vibration arms at an outside of the vibration arms.
摘要:
The present invention relates to a layer thickness sensor for monitoring deposition processes and to a method for monitoring layer deposition processes in microsystem technology and nanotechnology. In order to provide an improved sensor which makes it possible to determine layer thicknesses in the region of less than approximately 0.2 nm, the invention proposes using mass-sensitive, piezoelectric thin-film resonators which are polarized both longitudinally and transversally for such layer thickness measuring systems. Temperature compensation can be additionally carried out by exciting at least two different oscillation modes at different frequencies and with a different temperature response and by means of corresponding calculation.