MIKROAKUSTISCHES BAUELEMENT MIT VERBESSERTER TEMPERATURKOMPENSATION

    公开(公告)号:EP3183811A1

    公开(公告)日:2017-06-28

    申请号:EP15735958.9

    申请日:2015-07-09

    申请人: SnapTrack, Inc.

    IPC分类号: H03H9/02

    摘要: For a component that operates by means of acoustic waves, the invention proposes the compensation of a negative temperature coefficient of the frequency by the provision of a compensation coating on the component, said coating comprising a material based on a chemical compound of at least two elements, the compound having a negative thermal expansion coefficient.

    摘要翻译: 对于通过声波操作的部件,本发明提出通过在部件上提供补偿涂层来补偿频率的负温度系数,所述涂层包括基于至少两种元素的化学化合物的材料 ,该化合物具有负热膨胀系数。

    PIEZOELECTRIC ACOUSTIC RESONATOR WITH ADJUSTABLE TEMPERATURE COMPENSATION CAPABILITY
    4.
    发明公开
    PIEZOELECTRIC ACOUSTIC RESONATOR WITH ADJUSTABLE TEMPERATURE COMPENSATION CAPABILITY 审中-公开
    温度可调节补偿能力压电声谐振器

    公开(公告)号:EP2892153A4

    公开(公告)日:2016-02-24

    申请号:EP13804060

    申请日:2013-08-21

    申请人: ZTE CORP UNIV TIANJIN

    IPC分类号: H03H9/02 H01L41/18

    摘要: A piezoelectric acoustic resonator with an adjustable temperature compensation capability is disclosed. The piezoelectric acoustic resonator includes: a piezoelectric acoustic reflection structure, a first electrode, a second electrode, a piezoelectric layer between the first electrode and the second electrode, and a temperature compensation layer; wherein the temperature compensation layer is a single-layer temperature compensation layer formed of Si x O y material, or a composite temperature compensation layer formed by stacking material with a positive temperature coefficient of sound velocity and material with a negative temperature coefficient of sound velocity; and the temperature compensation layer is configured to: perform reverse compensation for a temperature frequency shift caused by the first electrode, the piezoelectric layer and the second electrode in the piezoelectric acoustic resonator; wherein x:y is not equal to 1:2.

    Micromachined film bulk acoustic resonator
    7.
    发明授权
    Micromachined film bulk acoustic resonator 有权
    微结构化薄膜谐振器

    公开(公告)号:EP1548768B1

    公开(公告)日:2012-02-22

    申请号:EP04078526.3

    申请日:2004-12-24

    申请人: IMEC

    摘要: The present invention provides an FBAR device with a means for internally varying a capacitance. The device comprises a bottom electrode and a top electrode, said bottom electrode and said top electrode have an overlap area A, the overlap being defined by the projection of the top electrode onto the bottom electrode in a direction substantially perpendicular to the plane of the bottom electrode. Furthermore, the device comprises a piezoelectric layer in between said bottom electrode and said top electrode and a dielectric layer in between the piezoelectric layer and the bottom electrode. The device also comprises means for reversibly varying an internal impedance of the device. The capacitance may be tuned by either varying the thickness of the dielectric layer, by changing the overlap between the bottom electrode and the top electrode or by shifting a different dielectric material between the electrodes.

    Piezoelectric resonator element and piezoelectric device
    8.
    发明公开
    Piezoelectric resonator element and piezoelectric device 有权
    压电谐振元件和压电器件

    公开(公告)号:EP2276172A1

    公开(公告)日:2011-01-19

    申请号:EP10171212.3

    申请日:2005-10-17

    发明人: Tanaya, Hideo

    IPC分类号: H03H9/21

    摘要: A piezoelectric resonator element including: a base (51) formed by a piezoelectric material, having a given length; a plurality of vibration arms (35,36) extended from one end of the base; and a supporting arm extended from the other end apart from the one end of the base by the given length to a width direction so as to be extended to a same direction of the vibration arms at an outside of the vibration arms.

    摘要翻译: 一种压电振动片,其特征在于,具有:由压电材料形成的规定长度的基体(51) 多个振动臂(35,36),从基座的一端延伸; 以及支撑臂,该支撑臂从所述基座的所述一端远离所述给定长度地从所述另一端延伸到宽度方向,以便在所述振动臂的外侧延伸到所述振动臂的相同方向。

    MASSENSENSITIVE DÜNNSCHICHTRESONATOREN FÜR SCHICHTDICKENMASSSYSTEME
    10.
    发明公开
    MASSENSENSITIVE DÜNNSCHICHTRESONATOREN FÜR SCHICHTDICKENMASSSYSTEME 审中-公开
    MASS敏感薄膜谐振器的厚度测量系统

    公开(公告)号:EP2027435A1

    公开(公告)日:2009-02-25

    申请号:EP07725761.6

    申请日:2007-06-01

    IPC分类号: G01B17/02

    CPC分类号: H03H9/02102 G01B7/066

    摘要: The present invention relates to a layer thickness sensor for monitoring deposition processes and to a method for monitoring layer deposition processes in microsystem technology and nanotechnology. In order to provide an improved sensor which makes it possible to determine layer thicknesses in the region of less than approximately 0.2 nm, the invention proposes using mass-sensitive, piezoelectric thin-film resonators which are polarized both longitudinally and transversally for such layer thickness measuring systems. Temperature compensation can be additionally carried out by exciting at least two different oscillation modes at different frequencies and with a different temperature response and by means of corresponding calculation.