公开(公告)号：EP1720066A2

公开(公告)日：2006-11-08

申请号：EP06015443.2

申请日：2003-01-03

申请人： AZ Electronic Materials USA Corp.

发明人： Neisser, Mark O. ,  Oberlander, Joseph E. ,  Toukhy, Medhat A. ,  Sakamuri, Raj ,  Ding-Lee, Shuji

IPC分类号： G03F7/09

CPC分类号： G03F7/091 ,  G03F7/095 ,  Y10S430/151

摘要： Disclosed is a process for forming an image on a substrate, comprising the steps of: (a) coating on the substrate a first layer of a radiation sensitive, antireflective composition; (b) coating a second layer of a photoresist composition onto the first layer of the antireflective composition; (c) selectively exposing the coated substrate from step (b) to actinic radiation; and (d) developing the exposed coated substrate from step (c) to form an image; wherein both the photoresist composition and the antireflective composition are exposed in step (c); both are developed in step (d) using a single developer; wherein the antireflective composition of step (a) is a first minimum bottom antireflective coating (B.A.R.C.) composition, having a solids content of up to about 8% solids, and a maximum coating thickness of the coated substrate λ 2 n wherein λ is the wavelength of the actinic radiation of step (c) and n is the refractive index of the B.A.R.C. composition.

摘要翻译： 公开了一种在基板上形成图像的方法，包括以下步骤：（a）在基板上涂覆第一层辐射敏感的抗反射组合物; （b）将第二层光致抗蚀剂组合物涂覆在抗反射组合物的第一层上; （c）将涂覆的基材从步骤（b）选择性暴露于光化辐射; 和（d）从步骤（c）开发暴露的涂覆的基底以形成图像; 其中在步骤（c）中曝光光致抗蚀剂组合物和抗反射组合物; 在步骤（d）中使用单个显影剂开发两者; 其中步骤（a）的抗反射组合物是第一最小底部抗反射涂层（BARC）组合物，其固体含量高达约8％固体，并且涂覆基材的最大涂层厚度»2 ¢n其中»是 步骤（c）的光化辐射的波长和n是BARC的折射率 组成。

公开(公告)号：EP1154324A4

公开(公告)日：2006-06-07

申请号：EP00974831

申请日：2000-11-08

申请人： AZ ELECTRONIC MATERIALS USA

发明人： TAKANO YUSUKE ,  TANAKA HATSUYUKI ,  LEE DONG HAN

IPC分类号： G03F7/09 ,  H01L21/027 ,  C08L33/02 ,  G03F7/11

CPC分类号： G03F7/091 ,  Y10S430/151

摘要： A composition for antireflection coating comprising (a) polyacrylic acid, (b) polyvinylpyrrolidone, (c) CnF2n+1COOH (n is an integer of 3 to 11), and (d) tetramethylammonium hydroxide is applied to a photoresist film to form an antireflection film. The coated photoresist film is exposed to light and developed to obtain a resist pattern of a satisfactory shape free from T-tops, round tops, etc.

公开(公告)号：EP1586002A1

公开(公告)日：2005-10-19

申请号：EP04704341.9

申请日：2004-01-22

申请人： FUJI PHOTO FILM CO., LTD.

发明人： MURAMATSU, Yuuzou, c/o Fuji Photo Film Co., Ltd.

IPC分类号： G02B1/10 ,  G02B5/30 ,  B32B27/30

CPC分类号： B32B27/28 ,  B32B7/12 ,  B32B27/08 ,  B32B27/20 ,  B32B2307/40 ,  B32B2307/584 ,  B32B2310/08 ,  B32B2317/18 ,  B32B2367/00 ,  B32B2457/20 ,  G02B1/105 ,  G02B1/111 ,  G02B1/14 ,  G02B1/18 ,  Y10S430/106 ,  Y10S430/151 ,  Y10T428/31935

摘要： An antireflection film that has sufficient antireflection capability and antifouling property and is improved in scratch resistance, and a process for producing an antireflection film with considerably high productivity are provided, which is an antireflection film comprising a transparent support, a hard coat layer and a low refractive index layer, in this order, wherein the hard coat layer includes a polymerized product of (A) an ethylene oxide or propylene oxide adduct of a polyfunctional acrylate monomer and (B) a polyfunctional acrylate monomer having no oxide adduct.

摘要翻译： 提供了具有足够的防反射能力和防污性并且耐划伤性提高的抗反射膜，以及具有相当高的生产率的制造抗反射膜的方法，其是包含透明载体，硬涂层和低涂层的抗反射膜 折射率层，其中硬涂层包含（A）多官能丙烯酸酯单体的环氧乙烷或环氧丙烷加合物和（B）不具有氧化物加合物的多官能丙烯酸酯单体的聚合产物。

公开(公告)号：EP1554322A4

公开(公告)日：2005-10-05

申请号：EP03809914

申请日：2003-05-13

申请人： BREWER SCIENCE INC

发明人： XU GU ,  MEADOR JIMMY D ,  BHAVE MANDER R ,  DESHPANDE SHREERAM V ,  NOWAK KELLY A

IPC分类号： C09D101/00 ,  C09D129/08 ,  G02B1/11 ,  G03F7/09 ,  H01L21/768 ,  C08F212/08

CPC分类号： H01L21/76808 ,  G02B1/111 ,  G03F7/091 ,  Y10S430/136 ,  Y10S430/151

摘要： New anti-reflective or fill compositions having improved flow properties are provided. The compositions comprise a styrene-allyl alcohol polymer and preferably at least one other polymer (e.g., cellulosic polymers) in addition to the styrene-allyl alcohol polymer. The inventive compositions can be used to protect contact or via holes from degradation during subsequent etching in the dual damascene process. The inventive compositions can also be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having high etch rates which minimize or prevent reflection during subsequent photoresist exposure and developing.

摘要翻译： 提供了具有改进流动性能的新型抗反射或填充组合物。 除了苯乙烯 - 烯丙醇聚合物之外，组合物还包含苯乙烯 - 烯丙醇聚合物，优选至少一种其他聚合物（例如纤维素聚合物）。 本发明的组合物可以用于在双镶嵌工艺的后续蚀刻期间保护接触或通孔免于降解。 本发明的组合物也可以用于基底（例如硅晶片）以形成具有高蚀刻速率的抗反射涂层，该蚀刻速率最小化或防止后续光致抗蚀剂曝光和显影期间的反射。

公开(公告)号：EP1102120B1

公开(公告)日：2005-07-20

申请号：EP00203665.5

申请日：2000-10-23

申请人： EASTMAN KODAK COMPANY

发明人： Smith, Dennis Edward ,  Melpolder, Sharon Marilyn ,  Bennett, James Richard

IPC分类号： G03C1/498 ,  B41M5/40

CPC分类号： G03C1/49872 ,  Y10S430/151

公开(公告)号：EP1540420A2

公开(公告)日：2005-06-15

申请号：EP03761169.6

申请日：2003-06-18

申请人： Brewer Science, Inc.

发明人： COX, Robert, Christian ,  NEEF, Charles, J.

IPC分类号： G03F7/004 ,  G03C5/00 ,  C08G63/00 ,  C08G69/26

CPC分类号： C09D179/08 ,  C08G73/10 ,  C08G73/1025 ,  C08G73/1039 ,  C08G73/1064 ,  G02B1/111 ,  G03F7/038 ,  G03F7/091 ,  Y10S430/106 ,  Y10S430/151

摘要： Anti-reflective compositions and methods of using these compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In a preferred embodiment, the polymers of the composition include recurring monomers having the formulas (1) and (2) where: (1) each R is individually selected from the group consisting of hydrogen, -OH, aliphatics, and phenyls; and (2) L is selected from the group consisting of -SO2- and -CR'2-, where each R' is individually selected from the group consisting of hydrogen, aliphatics, phenyls, and -CX3, where each X is individually selected from the group consisting of the halogens. The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature), are wet developable, and have superior optical properties.

公开(公告)号：EP0962813B1

公开(公告)日：2005-02-23

申请号：EP99201483.7

申请日：1999-05-12

申请人： EASTMAN KODAK COMPANY

发明人： Smith, Dennis Edward, Eastman Kodak Co. ,  Melpolder, Sharon Marilyn c/o Eastman Kodak Co. ,  Muehlbauer, John Leonard, Eastman Kodak Co.

IPC分类号： G03C1/498

CPC分类号： G03C1/4989 ,  G03C1/32 ,  G03C2200/50 ,  Y10S430/151 ,  Y10S430/162

公开(公告)号：EP0824219B1

公开(公告)日：2004-09-22

申请号：EP97113187.5

申请日：1997-07-31

申请人： EASTMAN KODAK COMPANY

发明人： Wang, Yongcai, Eastman Kodak Company ,  Anderson, Charles Chester, Eastman Kodak Company ,  Bello, James Lee, Eastman Kodak Company ,  DeLaura, Mario Dennis, Eastman Kodak Company

IPC分类号： G03C1/32 ,  G03C1/95

CPC分类号： G03C1/32 ,  G03C1/95 ,  Y10S430/151 ,  Y10S430/162

公开(公告)号：EP1410106A1

公开(公告)日：2004-04-21

申请号：EP02747035.0

申请日：2002-07-16

申请人： Applied Materials, Inc.

发明人： FULLER, Scott ,  MONTGOMERY, Melvin, W. ,  ALBELO, Jeffrey, A. ,  BUXBAUM, Alex

IPC分类号： G03F1/08 ,  G03F7/09 ,  G03F7/16

CPC分类号： G03F7/168 ,  G03F1/46 ,  G03F1/50 ,  G03F1/76 ,  G03F7/091 ,  Y10S430/146 ,  Y10S430/151

摘要： One principal embodiment of the disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including: applying an organic antireflection coating over a surface of a photomask which includes a chrome-containing layer; applying a chemically-amplified DUV photoresist over a specific temperature range; exposing a surface of the DUV photoresist to the direct write continuous wave laser; and, post exposure baking the imaged DUV photoresist over a specific temperature range. The direct write continuous wave laser preferably operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.

摘要翻译： 本公开的一个主要实施例涉及一种使用直写式连续波激光器光学制造光掩模的方法，包括一系列步骤，包括：在包含含铬层的光掩模的表面上施加有机抗反射涂层; 在有机抗反射涂层上施加化学放大的DUV光致抗蚀剂; 在特定温度范围内涂抹DUV光刻胶; 将DUV光致抗蚀剂的表面暴露于直写式连续波激光器; 并且在特定温度范围内曝光烘烤成像的DUV光致抗蚀剂。 直写式连续波激光器优选在244nm或257nm的波长下工作。 在替代实施例中，有机抗反射涂层可以涂覆在覆盖含铬层的无机抗反射涂层上。

公开(公告)号：EP1392508A1

公开(公告)日：2004-03-03

申请号：EP02762137.4

申请日：2002-04-15

申请人： Brewer Science, Inc.

发明人： SHAO, Xie ,  MEADOR, Jim, D. ,  BHAVE, Mandar ,  KRISHNAMURTHY, Vandana ,  NOWAK, Kelly, A. ,  FOWLER, Michelle ,  DESHPANDE, Shreeram, V.

IPC分类号： B32B27/36 ,  G03C1/492

CPC分类号： C08J3/241 ,  G03F7/091 ,  Y10S430/151

摘要： Anti-reflective compositions and methods of using those compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In one embodiment, the compositions comprise less than about 0.3% by weight of a strong acid. In another embodiment, the weight ratio of strong acid to weak acid in the composition is from about 0:100 to about 25:75. Examples of preferred weak acid compounds include phenolic compounds (e.g., Bisphenol S, Bisphenol A, alpha-cyano-4-hydroxycinnamic acid), carboxylic acids (e.g., acetic acid), phosphoric acid, and cyano compounds. The polymer and other ingredients are preferably physically mixed in a solvent system. The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature).