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    Process for producing an image using a first minimum bottom antireflective coating composition
    7.
    发明公开
    Process for producing an image using a first minimum bottom antireflective coating composition 有权
    Verfahren zur Bilderzeugung unter Verwendung einer Antireflexunterschichtzusammensetzung

    公开(公告)号：EP1845415A2

    公开(公告)日：2007-10-17

    申请号：EP07009942.9

    申请日：2003-01-03

    申请人： AZ Electronic Materials USA Corp.

    发明人： Neisser, Mark O. ,  Oberlander, Joseph E. ,  Toukhy, Medhat A. ,  Sakamuri, Raj ,  Ding-lee, Shuji

    IPC分类号： G03F7/09 ,  G03F7/095

    CPC分类号： G03F7/091 ,  G03F7/095 ,  Y10S430/151

    摘要： Disclosed is a process for forming an image on a substrate, comprising the steps of: (a) coating on the substrate a first layer of a radiation sensitive, antireflective composition; (b) coating a second layer of a photoresist composition onto the first layer of the antireflective composition; (c) selectively exposing the coated substrate from step (b) to actinic radiation; and (d) developing the exposed coated substrate from step (c) to form an image; wherein both the photoresist composition and the antireflective composition are exposed in step (c); both are developed in step (d) using a single developer; wherein the antireflective composition of step (a) is a first minimum bottom antirefiective coating (B.A.R.O.) composition, having a solids content of up to about 8% solids, and a maximum coating thickness of the coated substrate of λ 2 ⁢ n wherein λ is the wavelength of the actinic radiation of step (c) and n is the refractive index of the B.A.R.C. composition.

    摘要翻译： 公开了一种在基板上形成图像的方法，包括以下步骤：（a）在基板上涂覆第一层辐射敏感的抗反射组合物; （b）将第二层光致抗蚀剂组合物涂覆在抗反射组合物的第一层上; （c）将涂覆的基材从步骤（b）选择性暴露于光化辐射; 和（d）从步骤（c）开发暴露的涂覆的基底以形成图像; 其中在步骤（c）中曝光光致抗蚀剂组合物和抗反射组合物; 在步骤（d）中使用单个显影剂开发两者; 其中步骤（a）的抗反射组合物是具有固体含量高达约8％固体的第一最小底部抗反射涂层（BARO）组合物，并且涂覆的基底的最大涂层厚度为»2 ¢n，其中» 是步骤（c）的光化辐射的波长，n是BARC的折射率 组成。

    COMPOSITION FOR ANTIREFLECTION FILM FORMATION
    9.
    发明公开
    COMPOSITION FOR ANTIREFLECTION FILM FORMATION 审中-公开
    ZUSAMMENSETZUNG ZUR BILDUNG EINES ANTIREFLEXFILMS

    公开(公告)号：EP1542075A1

    公开(公告)日：2005-06-15

    申请号：EP03741346.5

    申请日：2003-07-11

    申请人： Nissan Chemical Industries, Ltd.

    发明人： KISHIOKA, Takahiro c/o Nissan Chemical Ind., Ltd ,  ARASE, Shinya c/o Nissan Chemical Ind., Ltd. ,  MIZUSAWA, Ken-ichi c/o Nissan Chemical Ind., Ltd. ,  NAKAYAMA, Keisuke c/o Nissan Chemical Ind., Ltd.

    IPC分类号： G03F7/11 ,  H01L21/027

    CPC分类号： G03F7/091 ,  H01L21/0276 ,  Y10S430/151

    摘要： There is provided a composition for forming anti-reflective coating containing a urea compound substituted by hydroxyalkyl group or alkoxyalkyl group, and preferably a light absorbing compound and/or a light absorbing resin; a method of forming a anti-reflective coating for a semiconductor device by use of the composition; and a process for manufacturing a semiconductor device by use of the composition. The composition according to the present invention exhibits a good light-absorption to a light having a wavelength used for manufacturing a semiconductor device. Therefore, the composition exerts a high protection effect against light reflection, and has a high dry etching rate compared with photoresist layers.

    摘要翻译： 提供一种用于形成抗氧化涂层的组合物，其含有被羟烷基或烷氧基烷基取代的脲化合物，优选光吸收性化合物和/或光吸收树脂; 一种通过使用该组合物形成用于半导体器件的抗反射涂层的方法; 以及使用该组合物制造半导体器件的方法。 根据本发明的组合物对具有用于制造半导体器件的波长的光表现出良好的光吸收。 因此，该组合物对光反射具有高保护效果，并且与光致抗蚀剂层相比具有高的干蚀刻速率。