公开(公告)号：EP1602983A4

公开(公告)日：2009-12-16

申请号：EP04711490

申请日：2004-02-16

申请人： AZ ELECTRONIC MATERIALS USA ,  AZ ELECTRONIC MATERIALS JAPAN

发明人： TAKANO YUSUKE ,  HONG SUNG-EUN

IPC分类号： G03F7/033 ,  C08L39/00 ,  G03F7/40 ,  H01L21/027

CPC分类号： G03F7/40 ,  Y10S430/115 ,  Y10S430/165

公开(公告)号：EP1306726A4

公开(公告)日：2007-04-04

申请号：EP01938668

申请日：2001-06-14

申请人： AZ ELECTRONIC MATERIALS USA

发明人： TAKANO YUSUKE ,  IJIMA KAZUYO ,  FUNATO SATORU ,  MURAKAMI YOSHIO ,  TANAKA HATSUYUKI

IPC分类号： G03F7/11 ,  G03F7/38 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/16 ,  G03F7/32 ,  H01L21/027

CPC分类号： G03F7/322 ,  G03F7/0048 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/11 ,  G03F7/168 ,  H01L21/0274

摘要： For example, a development defect reducing composite made of an acidic composite containing a surface-active agent is applied to a chemically amplified photoresist film formed on a substrate of 8 inches or more. As a result, the resist surface is made hydrophilic, and a hardly soluble layer with respect to a developing liquid is prevented from being formed on the resist surface. By the acid diffusion of a proper amount from the developing defect reducing composite, moreover, the reduction in the film thickness of the chemically amplified photoresist after exposed and developed is greater by 10 angstroms to 500 angstroms than that of when the development defect reducing composite is not applied, a resist pattern such as a T-top or a round top having no degradation in the pattern shape is formed.

公开(公告)号：EP1653286A4

公开(公告)日：2010-01-06

申请号：EP04745605

申请日：2004-06-04

申请人： AZ ELECTRONIC MATERIALS USA

发明人： TAKAHASHI KIYOHISA ,  TAKANO YUSUKE

IPC分类号： G03F7/40 ,  H01L21/027

CPC分类号： G03F7/40

公开(公告)号：EP1154324A4

公开(公告)日：2006-06-07

申请号：EP00974831

申请日：2000-11-08

申请人： AZ ELECTRONIC MATERIALS USA

发明人： TAKANO YUSUKE ,  TANAKA HATSUYUKI ,  LEE DONG HAN

IPC分类号： G03F7/09 ,  H01L21/027 ,  C08L33/02 ,  G03F7/11

CPC分类号： G03F7/091 ,  Y10S430/151

摘要： A composition for antireflection coating comprising (a) polyacrylic acid, (b) polyvinylpyrrolidone, (c) CnF2n+1COOH (n is an integer of 3 to 11), and (d) tetramethylammonium hydroxide is applied to a photoresist film to form an antireflection film. The coated photoresist film is exposed to light and developed to obtain a resist pattern of a satisfactory shape free from T-tops, round tops, etc.

公开(公告)号：EP2244127A4

公开(公告)日：2013-10-02

申请号：EP09706606

申请日：2009-01-27

申请人： AZ ELECTRONIC MATERIALS JAPAN ,  AZ ELECTRONIC MATERIALS USA

发明人： TAKANO YUSUKE ,  LI JIN ,  ISHIKAWA TOMONORI ,  NOYA GO

IPC分类号： G03F7/40 ,  H01L21/027

CPC分类号： H01L21/0337 ,  C09D183/14 ,  C09D183/16 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/0338 ,  H01L21/31144 ,  Y10T428/24479

公开(公告)号：EP2146250A4

公开(公告)日：2011-07-06

申请号：EP08752271

申请日：2008-05-01

申请人： AZ ELECTRONIC MATERIALS USA

发明人： HONG SUNG-EUN ,  TAKANO YUSUKE ,  KANG WEN-BING

IPC分类号： G03F7/40 ,  H01L21/027

CPC分类号： H01L21/0271 ,  G03F7/40 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/3088

公开(公告)号：EP1804125A4

公开(公告)日：2010-09-15

申请号：EP05776761

申请日：2005-08-31

申请人： AZ ELECTRONIC MATERIALS USA

发明人： TAKAHASHI KIYOHISA ,  TAKANO YUSUKE

IPC分类号： G03F7/40 ,  G03F7/00 ,  H01L21/027

CPC分类号： G03F7/0035 ,  G03F7/40 ,  H01L21/0273 ,  Y10T428/10

公开(公告)号：EP1542077A4

公开(公告)日：2009-02-25

申请号：EP03736123

申请日：2003-06-10

申请人： AZ ELECTRONIC MATERIALS USA

发明人： AKIYAMA YASUSHI ,  TAKANO YUSUKE ,  TAKAHASHI KIYOHISA ,  HONG SUNG-EUN ,  OKAYASU TETSUO

IPC分类号： G03F7/11 ,  G03F7/16 ,  G03F7/38 ,  H01L21/027

CPC分类号： G03F7/11 ,  G03F7/168

摘要： A composition for preventing development defects which contains (1) a salt of a C4-15 perfluoroalkylcarboxylic acid, C4-10 perfluoroalkylsulfonic acid, or perfluoroadipic acid with ammonium, a tetraalkylammonium, or a C1-4 alkanolamine or (2) a salt of an inorganic acid with a quaternary fluoroalkylammonium salt, and in which the acid/base equivalent ratio is from 1/1 to 1/3. This composition is applied to a positive-acting chemical amplification type photoresist film formed on a substrate having a diameter as large as 8 inches or more. Before and/or after application of the composition for preventing development defects, the chemical amplification type photoresist film is baked. This photoresist film is subjected to exposure and post-exposure baking and is then developed. Thus, the decrease in photoresist film thickness through development can be larger by 100 to 600 Å than that in the case where the composition for preventing development defects is not applied. Development defects on substrates having a diameter as large as 8 inches or more are diminished, and resist patterns having a satisfactory sectional shape free from T-top or the like are formed.

公开(公告)号：EP2233978A4

公开(公告)日：2011-10-19

申请号：EP08863406

申请日：2008-12-12

申请人： AZ ELECTRONIC MATERIALS USA

发明人： NOYA GO ,  AKIYAMA YASUSHI ,  TAKANO YUSUKE

IPC分类号： G03F7/11 ,  C08F216/06 ,  C08F220/10 ,  C08F226/10 ,  G03F7/09 ,  H01L21/027

CPC分类号： G03F7/091 ,  C08F220/06 ,  C08F2220/1891 ,  G03F7/11

摘要： The present invention provides a composition for forming a top anti-reflection coating having a low refractive index, realizing a gradual swing curve and giving a small swing ratio. This composition comprises a solvent and an anthracene skeleton-containing polymer having a hydrophilic group. The composition forms an anti-reflection coating on a photoresist film, and can be used in a photolithographic process for forming a pattern by use of light having a wavelength of 160 to 260 nm.

摘要翻译： 本发明提供了一种用于形成具有低折射率的顶部防反射涂层的组合物，实现了逐渐的摆动曲线并提供了小的摆动比。 该组合物包含具有亲水基团的溶剂和含蒽骨架的聚合物。 该组合物在光致抗蚀剂膜上形成抗反射涂层，并且可以用于通过使用波长为160至260nm的光形成图案的光刻工艺中。

公开(公告)号：EP1653287A4

公开(公告)日：2010-10-06

申请号：EP04745608

申请日：2004-06-04

申请人： AZ ELECTRONIC MATERIALS USA

发明人： TAKANO YUSUKE

IPC分类号： G03F7/40 ,  G03F7/00 ,  H01L21/027

CPC分类号： H01L21/0274 ,  G03F7/0035 ,  G03F7/40