公开(公告)号：EP4190947A1

公开(公告)日：2023-06-07

申请号：EP21850647.5

申请日：2021-05-26

申请人： FUJIFILM Corporation

发明人： UMEDA, Kenichi

IPC分类号： C30B25/06 ,  H01L41/09 ,  H01L41/113 ,  H01L41/187 ,  H01L41/319 ,  C04B35/493 ,  C30B29/22 ,  C23C14/08

摘要： There are provided a piezoelectric film-attached substrate and piezoelectric element, which include, on a substrate in the following order, a lower electrode layer, a piezoelectric film containing a perovskite-type oxide containing lead as a main component of an A site, and a buffer layer, where the buffer layer contains a metal oxide represented by M d N 1-d O e . Here, M consists of one or more metal elements substitutable for the A site of the perovskite-type oxide and has an electronegativity of less than 0.95. In a case of 0 12 , t1 = 0.0306, and y0 = 0.59958.

公开(公告)号：EP3775332A1

公开(公告)日：2021-02-17

申请号：EP19722177.3

申请日：2019-03-26

申请人： SOITEC

发明人： GHYSELEN, Bruno

IPC分类号： C30B23/02 ,  C30B25/18 ,  C30B29/22 ,  H01L21/762 ,  C30B33/06

公开(公告)号：EP3464686B1

公开(公告)日：2020-04-22

申请号：EP17745412.1

申请日：2017-06-30

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： VISSIE, Pascal ,  GROSIL, Max ,  PINTAULT, Bruno

IPC分类号： C30B7/08 ,  C30B29/22 ,  C30B7/14

公开(公告)号：EP3525347A1

公开(公告)日：2019-08-14

申请号：EP17858489.2

申请日：2017-10-05

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： TANNO, Masayuki ,  NAGATA, Kazutoshi ,  AKIYAMA, Shoji ,  KATO, Koji

IPC分类号： H03H3/08 ,  C30B29/22 ,  C30B31/22 ,  C30B33/06 ,  H03H9/25

摘要： An object of the present invention is to provide a method of manufacturing a composite substrate including a piezoelectric layer with less Li amount variation and a support substrate. A method of manufacturing a composite substrate of the present invention includes a step of performing ion implantation into a piezoelectric substrate, a step of bonding the piezoelectric substrate and the support substrate, a step of separating the bonded substrate, at an ion-implanted portion of the piezoelectric substrate, into the piezoelectric layer bonded to the support substrate and the remaining piezoelectric substrate after the step of bonding the piezoelectric substrate and the support substrate, and a step of diffusing Li into the piezoelectric layer after the separating step.

公开(公告)号：EP3476805A1

公开(公告)日：2019-05-01

申请号：EP16906289.0

申请日：2016-06-23

申请人： DIC Corporation

发明人： OKI Hironobu ,  ITOYA Kazuo ,  IIDA Masaki ,  YUAN Jianjun ,  KINOSHITA Hiroshi

IPC分类号： C01F7/16 ,  C01G39/00 ,  C30B29/22

摘要： Alumina is generally used as an inorganic filler, while spinel, which is known to be lower in thermal conductivity than alumina, is used in applications such as gems, fluorescence emitters, catalyst carriers, adsorbents, photocatalysts and heat-resistant insulating materials, but not expected to be used as a thermally conductive inorganic filler. Thus, an object of the invention is to provide spinel particles having excellent thermal conductive properties. The invention relates to a spinel particle including magnesium, aluminum and oxygen atoms and molybdenum and having a [111] plane crystallite diameter of 220 nm or more.

公开(公告)号：EP3045958B1

公开(公告)日：2019-04-24

申请号：EP14844266.8

申请日：2014-09-11

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： IKARI Masanori

IPC分类号： G02B27/28 ,  C30B29/22 ,  C30B29/32 ,  G02F1/09 ,  C04B35/01 ,  C04B35/16 ,  C04B35/457 ,  C04B35/462 ,  C04B35/486 ,  C04B35/495 ,  C04B35/626 ,  C04B35/645

公开(公告)号：EP3438054A1

公开(公告)日：2019-02-06

申请号：EP17773863.0

申请日：2017-02-22

申请人： Powdertech Co., Ltd.

发明人： KOJIMA, Takashi ,  ISHII, Kazutaka ,  SUGIURA, Takao ,  IGARASHI, Tetsuya ,  AGA, Koji

IPC分类号： C01G49/00 ,  C04B35/36 ,  C08K3/22 ,  C08L101/00 ,  C30B29/22 ,  H01F1/36 ,  H01F1/37

摘要： An object of the present invention is to provide ferrite particles having a high saturation magnetisation, and being excellent in the dispersibility in a resin, a solvent or a resin composition, a resin composition including the ferrite particles, and a resin film composed of the resin composition. The ferrite particles are a single crystalline body having an average particle size of 1 to 2000 nm, and Mn-based ferrite particles having a spherical shape, and have a saturation magnetisation of 45 to 95 Am 2 /kg. The resin composition includes the ferrite particles as a filler. The resin film is composed of the resin composition.

公开(公告)号：EP2823092B1

公开(公告)日：2018-11-21

申请号：EP13709510.5

申请日：2013-03-01

申请人： Oxford University Innovation Limited

发明人： SNAITH, Henry James ,  CROSSLAND, Edward James William

IPC分类号： C30B7/00 ,  C30B29/16 ,  C30B29/46 ,  C30B29/60 ,  C30B33/02 ,  H01L21/02 ,  C30B7/10 ,  C30B7/14 ,  C30B29/22 ,  H01G9/20 ,  H01L51/42 ,  H01L31/032 ,  H01L31/18

CPC分类号： C30B7/10 ,  C30B7/00 ,  C30B7/14 ,  C30B29/16 ,  C30B29/22 ,  C30B29/46 ,  C30B29/60 ,  C30B33/02 ,  H01G9/2031 ,  H01L21/02422 ,  H01L21/02428 ,  H01L21/02521 ,  H01L21/02565 ,  H01L21/0259 ,  H01L21/02595 ,  H01L21/02628 ,  H01L31/032 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/18 ,  H01L51/4226 ,  Y02E10/541 ,  Y02E10/549 ,  Y02P70/521 ,  Y10T428/2982

摘要： The invention provides a process for producing a mesoporous single crystal of a semiconductor, wherein the shortest external dimension of said single crystal, measured along any of the crystallographic principal axes of said single crystal, is x, wherein x is equal to or greater than 50 nm, which process comprises growing a single crystal of a semiconductor within a mesoporous template material until said shortest external dimension of the single crystal is equal to or greater than x. Further provided is a mesoporous single crystal obtainable by the process of the invention. The invention also provides a mesoporous single crystal of a semiconductor, wherein the shortest external dimension of said single crystal measured along any of the principal axes of said single crystal is equal to or greater than 50 nm. Further provided is a composition comprising a plurality of mesoporous single crystals of the invention. The invention also provides a semiconducting layer of a mesoporous single crystal of the invention. Further provided is a semiconducting device comprising one or more mesoporous single crystals of the invention. The device may for instance be a photovoltaic device, a photodiode, a solar cell, a photo detector, a light-sensitive transistor, a phototransistor, a solid-state triode, a battery electrode, a light-emitting device or a light-emitting diode. The invention also provides the use of a mesoporous single crystal of the invention as a semiconducting material in a semiconducting device.

公开(公告)号：EP2371784B1

公开(公告)日：2018-05-16

申请号：EP09834518.4

申请日：2009-12-25

申请人： Inter-University Research Institute Corporation National Institutes of Natural Sciences ,  Genesis Research Institute, Incorporated

发明人： TAIRA, Takunori ,  AKIYAMA, Jun ,  ASAI, Shigeo ,  HARA, Kunihiko

IPC分类号： B28B1/00 ,  C04B35/447 ,  C04B35/50 ,  C04B35/645 ,  C30B29/22 ,  C30B29/30 ,  C30B30/04 ,  C30B28/00 ,  H01S3/16

CPC分类号： H01F41/0253 ,  B28B1/00 ,  B33Y40/00 ,  C04B35/447 ,  C04B35/50 ,  C04B35/6455 ,  C04B2235/3224 ,  C04B2235/6027 ,  C04B2235/605 ,  C04B2235/9653 ,  C30B28/00 ,  C30B29/22 ,  C30B29/30 ,  C30B30/04 ,  H01S3/1603 ,  H01S3/1611 ,  H01S3/1618 ,  H01S3/1671 ,  H01S3/1673 ,  H01S3/1685

摘要： Upon producing a transparent polycrystalline material, a suspension liquid (or slurry 1) is prepared, the suspension liquid being made by dispersing a raw-material powder in a solution, the raw-material powder including optically anisotropic single-crystalline particles to which a rare-earth element is added. A formed body is obtained from the suspension liquid by means of carrying out slip casting in a space with a magnetic field applied. On this occasion, while doing a temperature control so that the single-crystalline particles demonstrate predetermined magnetic anisotropy, one of static magnetic fields and rotary magnetic fields is selected in compliance with a direction of an axis of easy magnetization in the single-crystalline particles, and is then applied to them. A transparent polycrystalline material is obtained by sintering the formed body, the transparent polycrystalline material having a polycrystalline structure whose crystal orientation is controlled. In this calcination step, after subjecting the formed body to primary sintering at a temperature of 1, 600-1, 900 K, the resulting primarily-sintered body undergoes hot-isotropic-press sintering (or HIP processing) at a temperature of 1,600-1,900 K.

公开(公告)号：EP3192897A1

公开(公告)日：2017-07-19

申请号：EP17150954.0

申请日：2017-01-11

申请人： PRECIOSA, a.s.

发明人： Kokta, Milan

IPC分类号： C30B29/20 ,  C30B33/02 ,  C30B29/22

CPC分类号： C09K11/7774 ,  C09K11/676 ,  C09K11/7706 ,  C30B29/20 ,  C30B29/22 ,  C30B33/02

摘要： A method of increasing the luminescence efficiency of titanium-doped oxide crystal, suitable as a laser material, is disclosed, the method comprising the step of tempering the oxide crystal at a temperature from 1750 °C to 50 °C below the melting point of the oxide crystal in protecting atmosphere containing at least 40 volume percent of hydrogen and containing aluminium suboxide Al 2 O gas with a constant partial pressure.

摘要翻译： 公开了一种提高适合作为激光材料的掺杂钛的氧化物晶体的发光效率的方法，该方法包括以下步骤：在低于其熔点的1750℃至50℃的温度下对氧化物晶体进行回火 在含有至少40％（体积）氢气并含有低氧化亚铝氧化铝气体的保护气氛中保持恒定分压。