摘要:
High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.
摘要:
Methods and systems for a chip-on-wafer-on-substrate assembly are disclosed and may include in an integrated optical communication system comprising an electronics die and a substrate. The electronics die is bonded to a first surface of a photonic interposer and the substrate is coupled to a second surface of the photonic interposer opposite to the first surface. An optical fiber and a light source assembly are coupled to the second surface of the interposer in one or more cavities formed in the substrate. The integrated optical communication system is operable to receive a continuous wave (CW) optical signal in the photonic interposer from the light source assembly; and communicate a modulated optical signal to the optical fiber from said photonic interposer. A mold compound may be on the first surface of the interposer and in contact with the electronics die. The received CW optical signal may be coupled to an optical waveguide in the photonic interposer using a grating coupler.
摘要:
Methods and systems for hybrid integration of optical communication systems are disclosed and may include receiving continuous wave (CW) optical signals in a silicon photonics die (SPD) from an optical source external to the SPD. The received CW optical signals may be processed based on electrical signals received from an electronics die bonded to the SPD via metal interconnects. Modulated optical signals may be received in the SPD from optical fibers coupled to the SPD. Electrical signals may be generated in the SPD based on the received modulated optical signals and communicated to the electronics die via the metal interconnects. The CW optical signals may be received from an optical source assembly coupled to the SPD and/or from one or more optical fibers coupled to the SPD. The received CW optical signals may be processed utilizing one or more optical modulators, which may comprise Mach-Zehnder interferometer modulators.
摘要:
High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.
摘要:
Methods and systems for optoelectronics transceivers integrated on a CMOS chip are disclosed and may include receiving optical signals from optical fibers via grating couplers on a top surface of a CMOS chip, which may include a guard ring. Photodetectors may be integrated in the CMOS chip. A CW optical signal may be received from a laser source via grating couplers, and may be modulated using optical modulators, which may be Mach-Zehnder and/or ring modulators. Circuitry in the CMOS chip may drive the optical modulators. The modulated optical signal may be communicated out of the top surface of the CMOS chip into optical fibers via grating couplers. The received optical signals may be communicated between devices via waveguides. The photodetectors may include germanium waveguide photodiodes, avalanche photodiodes, and/or heterojunction diodes. The CW optical signal may be generated using an edge-emitting and/or a vertical-cavity surface emitting semiconductor laser.
摘要:
High speed optical modulators (700) can be made of k modulators (740) connected in series disposed on one of a variety of semiconductor substrates. An electrical signal propagating in a microwave transmission line (710) is tapped off of the transmission line at regular intervals and is amplified by k distributed amplifiers (720). Each of the outputs of the k distributed amplifiers is connected to a respective one of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable lumped element modulator, due to the lower capacitance of each of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable traveling wave modulator, due to the impedance matching provided by the distributed amplifiers.
摘要:
An optical wavelength grating coupler (102) incorporating one or more distributed Bragg reflectors (DBR) (434) or other reflective elements to enhance the coupling efficiency thereof. The grating coupler (102) has a grating (408) comprising scattering elements (103), and the one or more DBRs (434) are positioned with respect to the grating such that light passing through the grating towards the substrate (414) of the grating coupler (102) is reflected back by DBRs toward the grating. The DBR (434) comprises a multilayer stack of various materials and may be formed on the substrate (414). The grating coupler (102) may include a gas-filled cavity (472), where the cavity is formed by a conventional etching process and is used to reflect light toward the grating (408). The grating coupler (102) may also incorporate an anti-reflection coating (486) to reduce reflective loss on the surface of the grating.