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公开(公告)号：EP2345076A1
公开(公告)日：2011-07-20
申请号：EP09796598.2
申请日：2009-10-15
IPC分类号： H01L23/498
CPC分类号： H01L23/49827 , H01L23/3121 , H01L23/49838 , H01L24/48 , H01L24/49 , H01L2224/48091 , H01L2224/48227 , H01L2224/48228 , H01L2224/484 , H01L2224/49171 , H01L2924/00014 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01068 , H01L2924/01075 , H01L2924/01082 , H01L2924/014 , H01L2924/12036 , H01L2924/12041 , H01L2924/12043 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2224/45099 , H01L2924/00012 , H01L2224/85399 , H01L2224/05599
摘要： The invention specifies a surface-mountable apparatus (100) which has a mounting face (101), an upper face (102) which is situated opposite the mounting face (101), an electrically insulating support plate (1), an electrical component (2) and a housing (3). The support plate (1) closes off the apparatus (100) with respect to the mounting face (101). The support plate (1) also has an attachment face (103) which is situated opposite the mounting face (101). In order to make electrical contact with the component (2), the support plate (1) has conductor tracks (4) which are arranged on the attachment face (103), contact areas (5) which are arranged on the mounting face (101), and apertures (6), in each case one contact area (5) being electrically conductively connected to a conductor track (4) by means of an aperture (6). The component (2) is enclosed by the housing (3), with at least one aperture (6) being arranged beneath the component (2). The housing (3) and the support plate (1) are arranged flush with one another when the support plate (1) is viewed from above. Furthermore, the housing (3) closes off the apparatus (100) with respect to the upper face (102).
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公开(公告)号：EP2054705A1
公开(公告)日：2009-05-06
申请号：EP07847523.3
申请日：2007-11-29
CPC分类号： G01J1/4228 , G01J1/0488 , G01J3/36 , G01J3/46 , G01J3/465 , G01J3/50 , G01J3/51 , G01J3/513 , G01J2003/507 , H01L31/105
摘要： The invention specifies a radiation detector (1) having a detector arrangement (2), which has a plurality of detector elements (4, 5, 6) which are used to obtain a detector signal (DS) during operation of the radiation detector, and having a control apparatus (3), wherein the detector elements each have a spectral sensitivity distribution (400, 500, 600) and are suitable for generating signals (S4, S5, S6), at least one detector element contains a compound semiconductor material and this detector element is designed to detect radiation in the visible spectral range, the radiation detector is designed in such a manner that the sensitivity distributions of the detector elements are used to form different spectral sensitivity channels (420, 520, 620) of the radiation detector, a channel signal (K4, K5, K6) which is assigned to the respective sensitivity channel can be generated in the sensitivity channels using the detector elements, and the control apparatus is designed in such a manner that the contributions of different channel signals to the detector signal of the radiation detector are controlled differently.
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公开(公告)号：EP2406828B1
公开(公告)日：2019-07-10
申请号：EP10707060.9
申请日：2010-03-10
IPC分类号： H01L31/0216 , H01L31/0203 , H01L31/0352
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4.发明公开
公开(公告)号：EP2406828A1
公开(公告)日：2012-01-18
申请号：EP10707060.9
申请日：2010-03-10
IPC分类号： H01L31/0216 , H01L31/0203 , H01L31/0352
CPC分类号： H01L31/02165 , G02B5/22 , H01L31/0203 , H01L31/02162 , H01L31/035272 , H01L31/103
摘要： A radiation-receiving semiconductor component is specified, comprising a semiconductor body (1), which is formed with silicon and has a radiation entrance surface (1a) and also an absorption zone (2)in which electromagnetic radiation (10) passing into the semiconductor body (1) through the radiation entrance surface (1a) is absorbed, wherein the absorption zone (2) has a thickness (d) of at most 10 μm; a filter layer (3), which is formed with a dielectric material, wherein the filter layer (3) covers the radiation entrance surface (1a) of the semiconductor body (1); and a potting body (4) which covers the semiconductor body (1) at least at the radiation entrance surface (1a) thereof, wherein the potting body (4) contains a radiation-absorbing material (5).
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公开(公告)号：EP1929541A2
公开(公告)日：2008-06-11
申请号：EP06791310.3
申请日：2006-08-17
发明人： HÖFER, Thomas , KUHLMANN, Werner
IPC分类号： H01L31/0203 , H01L27/146 , H01L31/0304 , H01L31/105
CPC分类号： H01L31/02162 , B82Y20/00 , H01L24/48 , H01L24/49 , H01L24/73 , H01L27/14618 , H01L31/035236 , H01L31/105 , H01L2224/29339 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/49171 , H01L2224/73265 , H01L2224/83851 , H01L2924/00014 , H01L2924/01005 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01075 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/12041 , H01L2924/12043 , H01L2924/14 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2924/00012 , H01L2224/45099
摘要： A detector arrangement (100) with a microelectronic semiconductor chip (20) and a separate optoelectronic detector chip (10) is disclosed, wherein the detector chip is arranged on the semiconductor chip. Furthermore, a detector component with such a detector arrangement is disclosed.
摘要翻译： 检测器装置（200）包括微电子半导体芯片（20）和分离的光电检测器芯片（10），其中检测器芯片布置在半导体芯片上。 优选地，半导体芯片处理在检测器芯片中产生的信号，优选地用作该信号的放大器。 对于如上所述的检测器组件也包括独立权利要求。
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公开(公告)号：EP2345076B1
公开(公告)日：2018-08-01
申请号：EP09796598.2
申请日：2009-10-15
IPC分类号： H01L23/498 , H01L23/31
CPC分类号： H01L23/49827 , H01L23/3121 , H01L23/49838 , H01L24/48 , H01L24/49 , H01L2224/48091 , H01L2224/48227 , H01L2224/48228 , H01L2224/484 , H01L2224/49171 , H01L2924/00014 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01068 , H01L2924/01075 , H01L2924/01082 , H01L2924/014 , H01L2924/12036 , H01L2924/12041 , H01L2924/12043 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2224/45099 , H01L2924/00012 , H01L2224/85399 , H01L2224/05599
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7.发明授权
公开(公告)号：EP1203412B1
公开(公告)日：2013-12-25
申请号：EP00954383.6
申请日：2000-07-28
发明人： KUHLMANN, Werner
IPC分类号： H01L31/0232 , G01J1/42 , G01J1/58 , G01J1/04
CPC分类号： G01J1/429 , G01J1/0488 , G01J1/58 , H01L31/02322 , H01L31/02327
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公开(公告)号：EP1203412A1
公开(公告)日：2002-05-08
申请号：EP00954383.6
申请日：2000-07-28
发明人： KUHLMANN, Werner
IPC分类号： H01L31/0232 , G01J1/58
CPC分类号： G01J1/429 , G01J1/0488 , G01J1/58 , H01L31/02322 , H01L31/02327
摘要： In a photodetector for ultraviolet light radiation, the UV light to be detected is converted into light radiation of larger wavelengths in a scintillator layer (25) preferably applied to the surface of said filter (22), from which light emerges, after the UV light passes through a quartz lens (1) and a filter (22), which permits the passage of UV light. The silicon photodiode (24) exhibits a greater sensitivity to the light radiation of larger wavelengths. Optionally, an additional cut-off filter (26) can be used in order to improve the sensitivity loss of the system to a level ranging from 350 to 400 nm.
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