公开(公告)号：EP1410426B1

公开(公告)日：2012-03-07

申请号：EP02763308.0

申请日：2002-07-22

申请人： CREE, INC. ,  CREE MICROWAVE, LLC

发明人： SLATER, David ,  BHARATHAN, Jayesh ,  EDMOND, John ,  RAFFETTO, Mark ,  MOHAMMED, Anwar ,  NEGLEY, Gerald H. ,  ANDREWS, Peter

IPC分类号： H01L21/00

CPC分类号： H01L33/40 ,  H01L24/32 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/00012 ,  H01L2924/00

摘要： Bonding of flip-chip mounted light emitting devices having an irregular configuration is provided. Light emitting diodes having a shaped substrate are bonded to a submount by applying forces to the substrate an a manner such that shear forces within the substrate do not exceed a failure threshold of the substrate. Bonding a light emitting diode to a submount may be provided by applying force to a surface of a substrate of the light emitting diode that is oblique to a direction of motion of the light emitting diode to thermosonically bond the light emitting diode to the submount. Collets for use in bonding shaped substrates to a submount and systems for bonding shaped substrates to a submount are also provided.

公开(公告)号：EP1470636B1

公开(公告)日：2009-08-26

申请号：EP03705926.8

申请日：2003-01-23

申请人： CREE MICROWAVE, LLC

发明人： PENGELLY, Raymond, Sydney

IPC分类号： H03F3/68 ,  H03F1/02

CPC分类号： H03F1/32 ,  H03F1/0277 ,  H03F1/0288 ,  H03F3/602 ,  H03F2201/3203

摘要： An RF power amplifier for amplifying an RF signal over a broad range of power with improved efficiency includes a main amplifier (20) for amplifying an RF signal over a first range of power and with a power saturation level below the maximum of the broad range of power. A plurality of auxiliary amplifiers (21, 22, 23) are connected in parallel with the main amplifier (20) with each of the auxiliary amplifiers (21, 22, 23) being biased to sequentially provide an amplified output signal after the main amplifier (20) approaches saturation. The input signal is applied through a signal splitter (32) to the main amplifier (20) and the plurality of auxiliary amplifiers (21, 22, 23), and an output for receiving amplified output signals from the main amplifier (20) and the plurality of auxiliary amplifiers (21, 22, 23) includes a resistive load R/2. The split input signal is applied through a 90° transformer (30) to the main amplifier (20), and the outputs of the auxiliary amplifiers (21, 22, 23) are applied through 90° transformers (24, 25, 26) to a output load (28). When operating below saturation, the main amplifier (20) delivers power to a load of 2R and the main amplifier (20) delivers current to the load which is one-half the current at maximum power and the amplifier is saturated.

公开(公告)号：EP0988651A4

公开(公告)日：2007-10-17

申请号：EP98926453

申请日：1998-06-10

申请人： CREE MICROWAVE LLC

发明人： HEBERT FRANCOIS

IPC分类号： H01L29/78 ,  H01L21/225 ,  H01L21/336 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45

CPC分类号： H01L29/66659 ,  H01L21/2257 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/66696 ,  H01L29/7816 ,  H01L29/7835

摘要： A lateral diffused MOS transistor formed in an epitaxial layer includes a trench source contact (30). A method of making the transistor is also described, including an etch step for the trench.

公开(公告)号：EP1620943A4

公开(公告)日：2006-08-09

申请号：EP04750107

申请日：2004-04-08

申请人： CREE MICROWAVE LLC

发明人： PENGELLY RAYMOND SYDNEY ,  WOOD SIMON MAURICE

IPC分类号： H03F3/68 ,  H03F1/02 ,  H03F1/07 ,  H03F1/32 ,  H03F3/24 ,  H03F3/60

CPC分类号： H03F1/0288 ,  H03F1/0277 ,  H03F1/32 ,  H03F3/602 ,  H03F2201/3203

摘要： An RF power amplifier circuit for amplifying an RF signal over a broad range of power with improved efficiency includes a carrier amplifier for amplifying an RF signal over a first range of power and with a power saturation level below the maximum of the broad range of power is disclosed. A plurality of peak amplifiers are connected in parallel with the carrier amplifier with each of the peak amplifiers being biased to sequentially provide an amplified output signal after the carrier amplifier approaches saturation. The input signal is applied through a signal splitter to the carrier amplifier and the plurality of peak amplifiers, and an output for receiving amplified output signals from the carrier amplifier and the plurality of peak amplifiers includes a resistive load R/2. The split input signal is applied through a 90° transformer to the carrier amplifier, and the outputs of the peak amplifiers are applied through 90° transformers to a output load. When operating below saturation, the carrier amplifier delivers power to a load of 2R and the carrier amplifier delivers current to the load, which is one-half the current at maximum power when the amplifier is saturated. In one embodiment with the output having an impedance, Z, the carrier amplifier and each peak amplifier is connected to the output through an output-matching network presenting an output impedance of less than Z to each amplifier and with each output-matching network having selected phase length to reduce reactance of the output impedance.

摘要翻译： 用于以宽的功率范围放大RF信号并具有提高的效率的RF功率放大器电路包括用于在第一功率范围上放大RF信号的载波放大器，并且功率饱和电平低于宽范围功率的最大值 披露。 多个峰值放大器与载波放大器并联连接，每个峰值放大器被偏置以在载波放大器接近饱和之后顺序地提供放大的输出信号。 输入信号通过信号分离器施加到载波放大器和多个峰值放大器，并且用于接收来自载波放大器和多个峰值放大器的放大输出信号的输出包括电阻负载R / 2。 分离输入信号通过90°变压器施加到载波放大器，峰值放大器的输出通过90°变压器施加到输出负载。 当工作在饱和以下时，载波放大器向2R负载提供电源，载波放大器向负载提供电流，当放大器饱和时，该电流为最大功率时的电流的一半。 在输出具有阻抗Z的一个实施例中，载波放大器和每个峰值放大器通过输出匹配网络连接到输出端，输出匹配网络向每个放大器呈现小于Z的输出阻抗，并且每个输出匹配网络已经选择 相位长度以减小输出阻抗的电抗。

公开(公告)号：EP1620325A4

公开(公告)日：2006-08-09

申请号：EP04749959

申请日：2004-04-09

申请人： CREE MICROWAVE LLC

发明人： PENGELLY RAYMOND SYDNEY ,  WOOD SIMON MAURICE

IPC分类号： H03F1/02 ,  H03F3/68 ,  B65D51/16 ,  B65D51/24 ,  H01L20060101 ,  H03F1/07 ,  H03F1/32 ,  H03F3/19 ,  H03F3/24 ,  H03F3/60

CPC分类号： H03F1/0288 ,  H03F1/0277 ,  H03F1/32 ,  H03F3/602 ,  H03F2200/451 ,  H03F2201/3203

摘要： An RF power amplifier circuit for amplifying an RF signal over a broad range of power with improved efficiency includes a carrier amplifier for amplifying an RF signal over a first range of power and with a power saturation level below the maximum of the broad range of power is disclosed. One or more peak amplifiers are connected in parallel with the carrier amplifier with each of the peak amplifiers being biased to sequentially provide an amplified output signal after the carrier amplifier approaches saturation. The input signal is applied through a signal splitter to the carrier amplifier and the plurality of peak amplifiers, and an output for receiving amplified output signals from the carrier amplifier and the plurality of peak amplifiers includes a resistive load R/2. The split input signal is applied through a 90° transformer to the carrier amplifier, and the outputs of the peak amplifiers are applied through 90° transformers to a output load. When operating below saturation, the carrier amplifier delivers power to a load of 2R when the carrier amplifier delivers current to the load, which is one-half the current at maximum power and the amplifier is saturated. The signal splitter can split the input signal power equally among the carrier and one or more peak amplifiers, or the input signal can be split unequally with the carrier amplifier receiving less input power than each of the peak amplifiers and vice versa.

公开(公告)号：EP1142012A4

公开(公告)日：2007-08-15

申请号：EP99942284

申请日：1999-08-17

申请人： CREE MICROWAVE LLC

发明人： HEBERT FRANCOIS ,  NG SZEHIM DANIEL

IPC分类号： H01L21/336 ,  H01L21/74 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78

CPC分类号： H01L29/66659 ,  H01L21/743 ,  H01L29/1087 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/41775 ,  H01L29/42368 ,  H01L29/7835

摘要： Method of fabricating a high power RF lateral diffused MOS transistor (LDMOS) having increased reliability includes fabricating an N-drift region for the drain prior to fabrication of the gate (24) contact and other process steps in fabricating the transistor. The resulting device has reduced adverse effects from hot carrier injection including reduced threshold voltage shift over time and reduced maximum current reduction over time. Linearity of device is maximized along with increased reliability while channel length (2) is reduced.

公开(公告)号：EP2262017A3

公开(公告)日：2017-01-04

申请号：EP10179427.9

申请日：2002-07-22

申请人： Cree, Inc. ,  Cree Microwave, LLC

发明人： Slater, David ,  Bharathan, Jayesh ,  Edmond, John ,  Raffetto, Mark ,  Mohammed, Anwar ,  Negley, Gerald H. ,  Andrews, Peter

IPC分类号： H01L33/62

CPC分类号： H01L33/62 ,  H01L33/38 ,  H01L2224/04026 ,  H01L2224/26175 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00

摘要： Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount.; Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.

摘要翻译： 发光器件具有在基板的台面结构，并在台面电极通过形成导电的预定图案，其附接材料在电极中的至少一个与基座和安装连接到在倒装芯片结构的副安装座 发光器件，其与所述基座。 附导电的预定图案被选择的材料，以便防止导电性附加材料从接触具有当发光被安装到所述基座装置相反的导电类型的区域。 导电的预定图案附加材料可以提供附接材料的体积的确小于由在所述电极与所述电极和所述底座之间的距离的区域限定的体积。 光，因此具有导电性的预定义模式附加材料设置发光装置。 上的基板，彩色具有氮化镓系发光区域的发光装置：诸如碳化硅衬底，可以由氮化镓基发光区域的电极的安装到基台利用乙安装在倒装芯片配置 -stage可固化的环氧这一点。 因此具有其中设置该B阶可固化的环氧发光器件。

公开(公告)号：EP1103074A4

公开(公告)日：2007-10-17

申请号：EP99937597

申请日：1999-07-28

申请人： CREE MICROWAVE LLC

发明人： HEBERT FRANCOIS

IPC分类号： H01L29/76 ,  H01L21/20 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/148 ,  H01L29/00 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/768 ,  H01L29/78 ,  H01L29/788 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/402 ,  H01L21/2815 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66659 ,  H01L29/7802 ,  H01L29/7835

摘要： A MOSFET has a buried shield plate under the gate and over the drain with the gate being formed on the periphery of the buried shield plate as a self-aligned structure with minimal or no overlap of the gate over the shield plate. Methods of fabricating the MOSFET are disclosed.

公开(公告)号：EP1620943A1

公开(公告)日：2006-02-01

申请号：EP04750107.7

申请日：2004-04-08

申请人： CREE MICROWAVE, LLC

发明人： PENGELLY, Raymond, Sydney ,  WOOD, Simon, Maurice

IPC分类号： H03F3/68

CPC分类号： H03F1/0288 ,  H03F1/0277 ,  H03F1/32 ,  H03F3/602 ,  H03F2201/3203

摘要： An RF power amplifier circuit for amplifying an RF signal over a broad range of power with improved efficiency includes a carrier amplifier for amplifying an RF signal over a first range of power and with a power saturation level below the maximum of the broad range of power is disclosed. A plurality of peak amplifiers are connected in parallel with the carrier amplifier with each of the peak amplifiers being biased to sequentially provide an amplified output signal after the carrier amplifier approaches saturation. The input signal is applied through a signal splitter to the carrier amplifier and the plurality of peak amplifiers, and an output for receiving amplified output signals from the carrier amplifier and the plurality of peak amplifiers includes a resistive load R/2. The split input signal is applied through a 90° transformer to the carrier amplifier, and the outputs of the peak amplifiers are applied through 90° transformers to a output load. When operating below saturation, the carrier amplifier delivers power to a load of 2R and the carrier amplifier delivers current to the load, which is one-half the current at maximum power when the amplifier is saturated. In one embodiment with the output having an impedance, Z, the carrier amplifier and each peak amplifier is connected to the output through an output-matching network presenting an output impedance of less than Z to each amplifier and with each output-matching network having selected phase length to reduce reactance of the output impedance.

公开(公告)号：EP2262017A2

公开(公告)日：2010-12-15

申请号：EP10179427.9

申请日：2002-07-22

申请人： Cree, Inc. ,  Cree Microwave, LLC

发明人： Slater, David ,  Bharathan, Jayesh ,  Edmond, John ,  Raffetto, Mark ,  Mohammed, Anwar ,  Negley, Gerald H. ,  Andrews, Peter

IPC分类号： H01L33/62 ,  H01L33/40

CPC分类号： H01L33/62 ,  H01L33/38 ,  H01L2224/04026 ,  H01L2224/26175 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00

摘要： Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount.; Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.