公开(公告)号：EP2634825B1

公开(公告)日：2018-12-26

申请号：EP11836609.5

申请日：2011-10-26

申请人： SK Siltron Co., Ltd. ,  Kumoh National Institute Of Technology Industry-Academic Cooperation Foundation

发明人： AN, Sung Jin ,  LEE, Dong gun ,  KIM, Seok Han

IPC分类号： H01L33/12 ,  H01L33/00

CPC分类号： H01L33/02 ,  B82Y40/00 ,  H01L21/02104 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02499 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/38 ,  H01L29/06 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32 ,  Y10S977/734

摘要： According to the present invention, a method for manufacturing a compound semiconductor comprises: forming a graphene-derived material layer on either a first selected substrate or a first selected compound semiconductor layer; forming a second compound semiconductor layer of at least one layer on at least said graphene-derived material layer, and changing the graphene-derived material layer so as to separate said second compound semiconductor layer of at least one layer.

公开(公告)号：EP2634824A2

公开(公告)日：2013-09-04

申请号：EP11836604.6

申请日：2011-10-26

申请人： LG Siltron Inc. ,  Kumoh National Institute of Technology Industry-Academic Cooperation Foundation

发明人： AN, Sung Jin ,  LEE, Dong Gun ,  KIM, Seok Han

IPC分类号： H01L33/12

CPC分类号： H01L33/02 ,  B82Y40/00 ,  H01L21/02104 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02499 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/38 ,  H01L29/06 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32 ,  Y10S977/734

摘要： Provided are a compound semiconductor device and a manufacturing method thereof. A substrate and a graphene oxide layer are provided on the substrate. A first compound semiconductor layer is provided on the graphene oxide layer. The first compound semiconductor layer is selectively grown from the substrate exposed by the graphene oxide.

摘要翻译： 提供一种化合物半导体器件及其制造方法。 衬底和石墨烯氧化物层设置在衬底上。 在石墨烯氧化物层上设置第一化合物半导体层。 从由石墨烯氧化物暴露的衬底选择性地生长第一化合物半导体层。

公开(公告)号：EP2290718A2

公开(公告)日：2011-03-02

申请号：EP10173894.6

申请日：2010-08-24

申请人： Samsung Electronics Co., Ltd. ,  Kumoh National Institute Of Technology Industry-Academic Cooperation Foundation

发明人： Choi, Duk-Hyun ,  Choi, Jae-Young ,  Lee, Sang-Yoon ,  Kim, Sang-woo

IPC分类号： H01L41/047 ,  H01L41/113 ,  H01L41/18 ,  H01L41/22 ,  H01L27/142

CPC分类号： H02N2/18 ,  H01L41/0478 ,  H01L41/113 ,  H01L41/183 ,  H01L41/31 ,  H01L41/37 ,  H01L51/0032 ,  Y10T29/42 ,  Y10T29/49155 ,  Y10T29/49194

摘要： Disclosed is an apparatus for generating electrical energy that includes; a first electrode, and a second electrode spaced apart from the first electrode, and an energy generation layer disposed between the first electrode and the second electrode, wherein the energy generation layer comprises a photoelectric conversion layer and a plurality of piezoelectric nanowires, and wherein when an external force is applied to at least one of the first electrode and the second electrode, the plurality of piezoelectric nanowires are transformed to generate electrical energy.

摘要翻译： 公开了一种用于产生电能的装置，包括： 第一电极和与第一电极间隔开的第二电极，以及设置在第一电极和第二电极之间的能量产生层，其中能量产生层包括光电转换层和多个压电纳米线，并且其中当 外力施加到第一电极和第二电极中的至少一个，多个压电纳米线被转换以产生电能。

公开(公告)号：EP3144953A1

公开(公告)日：2017-03-22

申请号：EP14891679.4

申请日：2014-05-13

申请人： Samsung Electronics Co., Ltd. ,  Kumoh National Institute Of Technology Industry Academic Cooperation Foundation

发明人： PARK, Shanghyeun ,  LEE, Donggu ,  KIM, Ilhwan ,  SUNG, Jaekyung ,  LEE, Changsoo ,  KANG, Dongsu ,  YU, Euna

IPC分类号： H01J1/30

CPC分类号： H01J19/24 ,  H01J1/30 ,  H01J9/022 ,  H01J9/148 ,  H01J19/38 ,  H01J19/44 ,  H01J2209/022

摘要： Disclosed are an electron emitting device using graphene and a method for manufacturing the same. The electron emitting device includes a metal holder having at least one slot, at least one emitter plate inserted into the slot to protrude from a first surface of the metal holder, and including an emitter supporting member and a graphene emitter attached onto the emitter supporting member, an insulation layer provided on the first surface of the metal holder, and a gate electrode provided on the insulation layer and including a gate supporting member and a graphene gate attached onto the gate supporting member.

摘要翻译： 公开了使用石墨烯的电子发射器件及其制造方法。 电子发射器件包括具有至少一个槽的金属保持器，插入槽中的至少一个发射极板，以从金属保持器的第一表面突出，并且包括发射器支撑构件和附着在发射器支撑构件上的石墨烯发射器 设置在金属保持器的第一表面上的绝缘层和设置在绝缘层上的栅极，并且包括安装在栅极支撑构件上的栅极支撑构件和石墨烯栅极。

公开(公告)号：EP2634825A2

公开(公告)日：2013-09-04

申请号：EP11836609.5

申请日：2011-10-26

申请人： LG Siltron Inc. ,  Kumoh National Institute Of Technology Industry-Academic Cooperation Foundation

发明人： AN, Sung Jin ,  LEE, Dong gun ,  KIM, Seok Han

IPC分类号： H01L33/12

CPC分类号： H01L33/02 ,  B82Y40/00 ,  H01L21/02104 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02499 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/38 ,  H01L29/06 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32 ,  Y10S977/734

摘要： According to the present invention, a method for manufacturing a compound semiconductor comprises: forming a graphene-derived material layer on either a first selected substrate or a first selected compound semiconductor layer; forming a second compound semiconductor layer of at least one layer on at least said graphene-derived material layer, and changing the graphene-derived material layer so as to separate said second compound semiconductor layer of at least one layer.

摘要翻译： 根据本发明，化合物半导体的制造方法包括：在第一选择的基板或第一选择的化合物半导体层上形成石墨烯材料层; 在至少所述石墨烯衍生的材料层上形成至少一层的第二化合物半导体层，以及改变所述石墨烯衍生的材料层，以分离至少一层的所述第二化合物半导体层。

公开(公告)号：EP3144953B1

公开(公告)日：2019-04-10

申请号：EP14891679.4

申请日：2014-05-13

申请人： Samsung Electronics Co., Ltd. ,  Kumoh National Institute of Technology Industry-Academic Cooperation Foundation

发明人： PARK, Shanghyeun ,  LEE, Donggu ,  KIM, Ilhwan ,  SUNG, Jaekyung ,  LEE, Changsoo ,  KANG, Dongsu ,  YU, Euna

IPC分类号： H01J1/30 ,  H01J9/02 ,  H01J9/14 ,  H01J19/24 ,  H01J19/38 ,  H01J19/44

公开(公告)号：EP2634824B1

公开(公告)日：2018-12-12

申请号：EP11836604.6

申请日：2011-10-26

申请人： SK Siltron Co., Ltd. ,  Kumoh National Institute of Technology Industry-Academic Cooperation Foundation

发明人： AN, Sung Jin ,  LEE, Dong Gun ,  KIM, Seok Han

IPC分类号： H01L33/12

CPC分类号： H01L33/02 ,  B82Y40/00 ,  H01L21/02104 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02499 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/38 ,  H01L29/06 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32 ,  Y10S977/734

摘要： According to the present invention, a method for manufacturing a compound semiconductor comprises: forming a graphene-derived material layer on either a first selected substrate or a first selected compound semiconductor layer; forming a second compound semiconductor layer of at least one layer on at least said graphene-derived material layer, and changing the graphene-derived material layer so as to separate said second compound semiconductor layer of at least one layer.

公开(公告)号：EP2290718A3

公开(公告)日：2012-09-19

申请号：EP10173894.6

申请日：2010-08-24

申请人： Samsung Electronics Co., Ltd. ,  Kumoh National Institute Of Technology Industry-Academic Cooperation Foundation

发明人： Choi, Duk-Hyun ,  Choi, Jae-Young ,  Lee, Sang-Yoon ,  Kim, Sang-woo

IPC分类号： H01L41/047 ,  H01L41/113 ,  H01L41/18 ,  H01L41/22 ,  H01L27/142 ,  H02N2/18

CPC分类号： H02N2/18 ,  H01L41/0478 ,  H01L41/113 ,  H01L41/183 ,  H01L41/31 ,  H01L41/37 ,  H01L51/0032 ,  Y10T29/42 ,  Y10T29/49155 ,  Y10T29/49194

摘要： Disclosed is an apparatus for generating electrical energy that includes; a first electrode, and a second electrode spaced apart from the first electrode, and an energy generation layer disposed between the first electrode and the second electrode, wherein the energy generation layer comprises a photoelectric conversion layer and a plurality of piezoelectric nanowires, and wherein when an external force is applied to at least one of the first electrode and the second electrode, the plurality of piezoelectric nanowires are transformed to generate electrical energy.