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27 条记录 (耗时 0.016 秒)

    Fluorescent X-ray analysis apparatus
    1.
    发明公开
    Fluorescent X-ray analysis apparatus 有权
    Vorrichtung zur分析荧光灯Röntgenstrahlen

    公开(公告)号：EP1865309A1

    公开(公告)日：2007-12-12

    申请号：EP07252275.8

    申请日：2007-06-06

    申请人： SII NanoTechnology Inc.

    发明人： Sasayama, Norio, SII NanoTechnology Inc.

    IPC分类号： G01N23/223

    CPC分类号： G01N23/223 ,  G01N2223/076

    摘要： To provide a fluorescent X-ray analysis apparatus using a polarization for effectively measuring a minute portion of a sample surface without it being necessary to prepare many kinds of secondary targets, a fluorescent X-ray analysis apparatus according to the present invention includes an X-ray tube for generating an X-ray; a sample support portion for supporting a sample receiving the X-ray; a polarization filter for receiving an X-ray to be generated from the sample receiving the X-ray; and a detector for detecting the X-ray from the polarization filter. The X-ray tube, the sample, the polarization filter, and the detector are arranged so that three light paths, namely, a light path from the X-ray tube to the sample, a light path from the sample to the polarization filter, and a light path from the polarization filter to the detector are mutually orthogonal.

    摘要翻译： 为了提供使用极化的荧光X射线分析装置，无需准备多种二次靶，因此本发明的荧光X射线分析装置包括X射线分析装置， 用于产生X射线的X射线管; 用于支撑接收X射线的样本的样本支撑部分; 用于接收从接收X射线的样品产生的X射线的偏振滤光器; 以及用于检测来自偏振滤光器的X射线的检测器。 X射线管，样品，偏振滤光器和检测器被布置成使得三个光路，即从X射线管到样品的光路，从样品到偏振滤光器的光路， 并且从偏振滤光器到检测器的光路相互正交。

    FLUORESCENT X-RAY ANALY SIS DEVICE
    2.
    发明公开
    FLUORESCENT X-RAY ANALY SIS DEVICE 有权
    FLUORESZENZRÖNTGENANALYSEVORRICHTUNG

    公开(公告)号：EP1811291A1

    公开(公告)日：2007-07-25

    申请号：EP05799314.9

    申请日：2005-10-26

    申请人： SII NanoTechnology Inc.

    发明人： MATOBA, Yoshiki, SII Nanotechnology Inc. ,  FUKAI, Takayuki, SII Nanotechnology Inc. ,  TAKAHASHI, Masanori, SII Nanotechnology Inc. ,  IKKU, Yutaka, SII Nanotechnology Inc.

    IPC分类号： G01N23/223

    CPC分类号： G01N23/223 ,  G01N2223/076

    摘要： A sample sealing vessel 8 includes a plurality of wall faces comprising a material for transmitting X-ray, an X-ray source 1 is arranged at a wall face 11 to irradiate primary X-ray, a face 12 different from the face irradiated with the primary X-ray is arranged to be opposed to an X-ray detector 10, and the primary X-ray from the X-ray source 1 is arranged to be able to irradiate the wall face 12 of the sample sealing vessel to which the X-ray detector 10 is opposed.

    摘要翻译： 样品密封容器8包括多个壁面，其包括用于透射X射线的材料，X射线源1设置在壁面11处以照射主X射线，不同于被照射的X射线的面 初级X射线与X射线检测器10相对配置，来自X射线源1的主X射线被配置为能够照射样品密封容器的壁面12，X射线 射线检测器10相对。

    DIFFERENTIAL SCANNING CALORIMETER
    7.
    发明公开
    DIFFERENTIAL SCANNING CALORIMETER 审中-公开
    DIFFERENTIALSCANNINGKALORIMETER

    公开(公告)号：EP0962763A4

    公开(公告)日：2006-06-14

    申请号：EP98956019

    申请日：1998-12-01

    申请人： SII NANOTECHNOLOGY INC

    发明人： NAKAMURA NOBUTAKA

    IPC分类号： G01N25/20 ,  G01N25/48

    CPC分类号： G01N25/4826

    摘要： The temperature of a sample is roughly controlled by a furnace temperature controller in accordance with a programmed temperature and controlled finely by a sensor temperature controller. When a difference occurs between the temperatures of a sample and a reference, electric powers fed to heaters provided respectively near the sample and the reference are controlled so that the temperature difference may quickly be returned to zero by a differential temperature compensation circuit, and the difference between the fed electric powers is outputted as a differential heat flow.

    THIN PIECE SPECIMEN PREPARING METHOD AND COMPOSITE CHARGED PARTICLE BEAM DEVICE
    8.
    发明公开
    THIN PIECE SPECIMEN PREPARING METHOD AND COMPOSITE CHARGED PARTICLE BEAM DEVICE 审中-公开
    用于生产薄片样品和device复合带电粒子束

    公开(公告)号：EP1643232A1

    公开(公告)日：2006-04-05

    申请号：EP04747336.8

    申请日：2004-07-05

    申请人： SII NanoTechnology Inc.

    发明人： FUJII, Toshiaki, C/o Sii Nanotechnology Inc.

    IPC分类号： G01N1/28 ,  G01N1/32 ,  H01J37/305

    CPC分类号： H01J37/3005 ,  G01N1/32 ,  H01J37/304 ,  H01J37/3053 ,  H01J37/3056 ,  H01J2237/31745 ,  Y10T436/25

    摘要： At the same time as making a lamina by performing a sputtering etching working of a 1st focused ion beam 101, a scanning ion microscope observation is made by performing an irradiation of a 2nd focused ion beam 102 from a direction parallel to a side wall of the lamina, thereby measuring a thickness of the lamina. And, the working by the focused ion beam is finished by confirming the fact that the thickness of the lamina has become a predetermined thickness.

    摘要翻译： 同时，通过进行溅射蚀刻一个第一工作制备薄层聚焦离子束101，扫描离子显微镜观察由从平行的方向上执行一个第二聚焦离子束102的照射的侧壁制成 薄层，从而测量的厚度的薄层的。 并且，由聚焦离子束加工通过确认factthat层板的厚度已经成为预定的厚度结束。

    METHOD AND APPARATUS FOR MEASURING THIN FILM SAMPLE, AND METHOD AND APPARATUS FOR MANUFACTURING THIN FILM SAMPLE
    10.
    发明公开
    METHOD AND APPARATUS FOR MEASURING THIN FILM SAMPLE, AND METHOD AND APPARATUS FOR MANUFACTURING THIN FILM SAMPLE 有权
    方法和设备测量薄膜样品和方法和装置薄膜样品生产

    公开(公告)号：EP1843126A4

    公开(公告)日：2009-04-01

    申请号：EP05820171

    申请日：2005-12-22

    申请人： SII NANOTECHNOLOGY INC

    发明人： IKKU YUTAKA ,  ASAHATA TATSUYA ,  SUZUKI HIDEKAZU

    IPC分类号： G01B15/02 ,  G01N23/20 ,  G01N23/225 ,  H01J37/28 ,  H01J37/30 ,  H01L21/66

    CPC分类号： G01B15/02 ,  G01N23/225 ,  H01J2237/2814

    摘要： In a thin film sample measuring method wherein a thin film sample is irradiated with an electron beam, a generated secondary electron is detected and a film thickness of the thin film sample is measured by using the secondary electron, the film thickness is accurately and easily measured in a short time even when a current quantity of the applied electronic beam is fluctuated. The electron beam (2b) is applied, and the generated secondary electron (4) is detected by a secondary electron detector (6). A calculation value configured with a secondary electron quantity detected in a film thickness measuring area and a secondary electron quantity detected in a reference area is calculated by a first calculating means (11). The film thickness of the film thickness measuring area can be calculated from the standard data of a reference thin film sample and the calculation value obtained from a sample (5).