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">1.发明公开"LOW POWER SILICON THERMAL SENSORS AND MICROFLUIDIC DEVICES BASED ON THE USE OF POROUS SILICON SEALED AIR CAVITY TECHNOLOGY OR MICROCHANNEL TECHNOLOGY" 审中-公开热传感器，并与低消耗硅功率微流元件但与多孔硅密封的空气腔或微通道技术采用
公开(公告)号：EP1467946A1
公开(公告)日：2004-10-20
申请号：EP03700397.7
申请日：2003-01-16
发明人： NASSIOPOULOU, Androula G.NCSR "Demokritos" , KALTSAS, GrigorisNCSR "Demokritos" , PAGONIS, Dimitrios, NickolaosNCSR "Demokritos"
CPC分类号： B81C1/00071 , B81B2201/058 , B81B2203/0127 , B81B2203/0315 , B81C2201/0114 , B81C2201/0115 , G01F1/6845 , G01K7/028
摘要： This invention provides a miniaturized silicon thermal flow sensor with improved characteristics, based on the use of two series of integrated thermocouples (6, 7) on each side of a heater (4), all integrated on a porous silicon membrane (2) on top of a cavity (3). Porous silicon (2) with the cavity (3) underneath provides very good thermal isolation for the sensor elements, so as the power needed to maintain the heater (4) at a given temperature is very low. The formation process of the porous silicon membrane (2) with the cavity (3) underneath is a two-step single electrochemical process. It is based on the fact that when the anodic current is relatively low, we are in a regime of porous silicon formation, while if this current exceeds a certain value we turn into a regime of electropolishing. The process starts at low current to form porous silicon (2) and it is then turned into electropolishing conditions to form the cavity (3) underneath.Various types of thermal sensor devices, such as flow sensors, gas sensors, IR detectors, humidity sensors and thermoelectric power generators are described using the proposed methodology. Furthermore the present invention provides a method for the formation of microfluidic channels (16) using the same technique of porous silicon (17) and cavity (16) formation.
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2.发明授权METHOD FOR THE FABRICATION OF SUSPENDED POROUS SILICON MICROSTRUCTURES AND APPLICATION IN GAS SENSORS 有权制造悬浮多孔硅微结构的方法及其在气体传感器中的应用
公开(公告)号：EP1417151B9
公开(公告)日：2007-08-08
申请号：EP02712117.7
申请日：2002-02-18
发明人： TSAMIS, Christos, NCSR "Demokritos" , TSEREPI, Angeliki, NCSR "Demokritos" , NASSIOPOULOU, Androula, G., NCSR "Demokritos"
CPC分类号： H05B3/265 , B81B2201/0278 , B81B2203/0109 , B81B2203/0118 , B81C1/00682 , B81C1/0069 , B81C2201/0115 , G01F1/6845 , G01N27/12 , G01N27/16 , G01N27/18
摘要： This invention provides a front-side silicon micromachining process for the fabrication of suspended Porous Silicon membranes in the form of bridges or cantilevers and of thermal sensor devices employing these membranes. The fabrication of the suspended Porous Silicon membranes comprises the following steps: (a) formation of a Porous Silicon layer (2) in, at least one, predefined area of a Silicon substrate (1), (b) definition of etch windows (5) around or inside said Porous Silicon layer (2) using standard photolithography and (c) selective etching of the Silicon substrate (1), underneath the Porous Silicon layer (2), by using dry etching techniques to provide release of the Porous Silicon membrane and to form a cavity (6) under the said Porous Silicon layer. Furthermore, the present invention provides a method for the fabrication of thermal sensors based on Porous Silicon membranes with minimal thermal losses, since the proposed methodology combines the advantages that result from the low thermal conductivity of Porous Silicon and the use of suspended membranes. Moreover, the front-side micromachining process proposed in the present invention simplifies the fabrication process. Various types of thermal sensor devices, such as calorimetric-type gas sensors, conductometric-type gas sensors and thermal conductivity sensors are described utilizing the proposed methodology.
摘要翻译： 本发明提供了用于制造桥或悬臂形式的悬浮多孔硅膜和采用这些膜的热传感器装置的正面硅微机械加工方法。 悬浮多孔硅膜的制造包括以下步骤：（a）在硅衬底（1）的至少一个预定义区域中形成多孔硅层（2），（b）蚀刻窗口（5） ）在所述多孔硅层（2）周围或内部使用标准光刻和（c）在所述多孔硅层（2）下方通过使用干法蚀刻技术选择性蚀刻所述硅衬底（1）以提供所述多孔硅膜 并在所述多孔硅层下方形成空腔（6）。 此外，本发明提供了一种制造基于多孔硅膜的热传感器的方法，其具有最小的热损失，因为所提出的方法结合了由多孔硅的低导热性和使用悬浮膜所产生的优点。 而且，本发明提出的正面微机械加工工艺简化了制造工艺。 利用所提出的方法描述了各种类型的热传感器装置，例如量热型气体传感器，电导型气体传感器和热导传感器。
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3.发明授权
公开(公告)号：EP1417151B1
公开(公告)日：2007-01-03
申请号：EP02712117.7
申请日：2002-02-18
发明人： TSAMIS, Christos, NCSR "Demokritos" , TSEREPI, Angeliki, NCSR "Demokritos" , NASSIOPOULOU, Androula, G., NCSR "Demokritos"
CPC分类号： H05B3/265 , B81B2201/0278 , B81B2203/0109 , B81B2203/0118 , B81C1/00682 , B81C1/0069 , B81C2201/0115 , G01F1/6845 , G01N27/12 , G01N27/16 , G01N27/18
摘要： This invention provides a front-side silicon micromachining process for the fabrication of suspended Porous Silicon membranes in the form of bridges or cantilevers and of thermal sensor devices employing these membranes. The fabrication of the suspended Porous Silicon membranes comprises the following steps: (a) formation of a Porous Silicon layer (2) in, at least one, predefined area of a Silicon substrate (1), (b) definition of etch windows (5) around or inside said Porous Silicon layer (2) using standard photolithography and (c) selective etching of the Silicon substrate (1), underneath the Porous Silicon layer (2), by using dry etching techniques to provide release of the Porous Silicon membrane and to form a cavity (6) under the said Porous Silicon layer. Furthermore, the present invention provides a method for the fabrication of thermal sensors based on Porous Silicon membranes with minimal thermal losses, since the proposed methodology combines the advantages that result from the low thermal conductivity of Porous Silicon and the use of suspended membranes. Moreover, the front-side micromachining process proposed in the present invention simplifies the fabrication process. Various types of thermal sensor devices, such as calorimetric-type gas sensors, conductometric-type gas sensors and thermal conductivity sensors are described utilizing the proposed methodology.
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公开(公告)号：EP1200996A1
公开(公告)日：2002-05-02
申请号：EP00949738.9
申请日：2000-07-31
申请人： Institute of Microelectronics,National Centre for Scientific Research "Demokritos" , Nassiopoulou, Androula G.
摘要： There is disclosed a current generating arrangement having a plurality of thermocouples characterised in that the device comprises: a thick porous silicon layer; 'hot' thermocouple contacts on said thick porous silicon layer; a bulk crystalline silicon member; and 'cold' thermocouple contacts on said bulk, crystalline silicon layer.
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