公开(公告)号：EP3095755B1

公开(公告)日：2017-07-26

申请号：EP16168459.2

申请日：2016-05-04

申请人： Honeywell International Inc.

发明人： REINKE, John ,  LODDEN, Grant

IPC分类号： B81B7/00 ,  B81C1/00

CPC分类号： B81B7/0019 ,  B81B3/0081 ,  B81B7/0087 ,  B81B2201/0228 ,  B81B2201/025 ,  B81C1/0069 ,  H02N1/00

摘要： A method for fabricating a thermally isolated microelectromechanical system (MEMS) structure is provided. The method includes processing a first wafer of a first material with a glass wafer to form a composite substrate including at least one sacrificial structure of the first material and glass; forming a MEMS device in a second material; forming at least one temperature sensing element on at least one of: the composite substrate; and the MEMS device; and etching away the at least one sacrificial structure of the first material in the composite substrate to form at least one thermally isolating glass flexure. The MEMS device is thermally isolated on a thermal isolation stage by the at least one thermally isolating glass flexure. The at least one temperature sensing element in on a respective at least one of: the thermal isolation stage; and the MEMS device.

摘要翻译： 提供了一种用于制造热隔离微机电系统（MEMS）结构的方法。 该方法包括用玻璃晶片处理第一材料的第一晶片以形成包括第一材料和玻璃的至少一个牺牲结构的复合衬底; 以第二材料形成MEMS器件; 在至少一个复合衬底上形成至少一个温度传感元件; 和MEMS器件; 以及蚀刻掉复合衬底中的第一材料的至少一个牺牲结构以形成至少一个热隔离玻璃弯曲部。 MEMS器件通过至少一个热绝缘玻璃挠曲件在热绝缘台上热隔离。 所述至少一个温度感测元件位于热隔离级中的相应的至少一个上： 和MEMS器件。

公开(公告)号：EP2010449B1

公开(公告)日：2009-10-14

申请号：EP07727176.5

申请日：2007-03-21

申请人： Robert Bosch GmbH

发明人： FEYH, Ando

IPC分类号： B81B7/00 ,  B81C1/00 ,  H01L21/768

CPC分类号： B81B7/0006 ,  B81C1/0069 ,  H01L21/76898

摘要： The present invention describes wafer through-plating through a semiconductor substrate and a method for producing this wafer through-plating. In this case, at least one via hole is made in the front side of a semiconductor substrate in order to form the wafer through-plating using a trench etching process. The semiconductor material of the side wall of the via hole is then porously etched in an electrochemical etching process. A metal is introduced into the via hole in order to produce the electrical contact-making connection. In order to enable the electrical connection from the front side to the rear side of the semiconductor substrate, the via hole is opened from the rear side, for example by thinning the semiconductor substrate. In this case, this opening may be made before or after the metal is introduced into the via hole.

公开(公告)号：EP1417151B9

公开(公告)日：2007-08-08

申请号：EP02712117.7

申请日：2002-02-18

申请人： NCSR "DEMOKRITOS" ,  Tsamis, Christos ,  Tserepi, Angeliki ,  Nassiopoulou, Androula G.

发明人： TSAMIS, Christos, NCSR "Demokritos" ,  TSEREPI, Angeliki, NCSR "Demokritos" ,  NASSIOPOULOU, Androula, G., NCSR "Demokritos"

IPC分类号： B81B3/00 ,  G01F1/684 ,  H05B1/00

CPC分类号： H05B3/265 ,  B81B2201/0278 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C1/00682 ,  B81C1/0069 ,  B81C2201/0115 ,  G01F1/6845 ,  G01N27/12 ,  G01N27/16 ,  G01N27/18

摘要： This invention provides a front-side silicon micromachining process for the fabrication of suspended Porous Silicon membranes in the form of bridges or cantilevers and of thermal sensor devices employing these membranes. The fabrication of the suspended Porous Silicon membranes comprises the following steps: (a) formation of a Porous Silicon layer (2) in, at least one, predefined area of a Silicon substrate (1), (b) definition of etch windows (5) around or inside said Porous Silicon layer (2) using standard photolithography and (c) selective etching of the Silicon substrate (1), underneath the Porous Silicon layer (2), by using dry etching techniques to provide release of the Porous Silicon membrane and to form a cavity (6) under the said Porous Silicon layer. Furthermore, the present invention provides a method for the fabrication of thermal sensors based on Porous Silicon membranes with minimal thermal losses, since the proposed methodology combines the advantages that result from the low thermal conductivity of Porous Silicon and the use of suspended membranes. Moreover, the front-side micromachining process proposed in the present invention simplifies the fabrication process. Various types of thermal sensor devices, such as calorimetric-type gas sensors, conductometric-type gas sensors and thermal conductivity sensors are described utilizing the proposed methodology.

摘要翻译： 本发明提供了用于制造桥或悬臂形式的悬浮多孔硅膜和采用这些膜的热传感器装置的正面硅微机械加工方法。 悬浮多孔硅膜的制造包括以下步骤：（a）在硅衬底（1）的至少一个预定义区域中形成多孔硅层（2），（b）蚀刻窗口（5） ）在所述多孔硅层（2）周围或内部使用标准光刻和（c）在所述多孔硅层（2）下方通过使用干法蚀刻技术选择性蚀刻所述硅衬底（1）以提供所述多孔硅膜 并在所述多孔硅层下方形成空腔（6）。 此外，本发明提供了一种制造基于多孔硅膜的热传感器的方法，其具有最小的热损失，因为所提出的方法结合了由多孔硅的低导热性和使用悬浮膜所产生的优点。 而且，本发明提出的正面微机械加工工艺简化了制造工艺。 利用所提出的方法描述了各种类型的热传感器装置，例如量热型气体传感器，电导型气体传感器和热导传感器。

公开(公告)号：EP1306348B1

公开(公告)日：2007-05-16

申请号：EP01125193.1

申请日：2001-10-24

申请人： ROBERT BOSCH GMBH

发明人： Artmann, Hans ,  Pannek, Thorsten

IPC分类号： B81B3/00

CPC分类号： B81C1/0069 ,  B81B2201/0278 ,  B81B2203/0127 ,  B81C2201/0115 ,  B81C2201/0136

公开(公告)号：EP1417151B1

公开(公告)日：2007-01-03

申请号：EP02712117.7

申请日：2002-02-18

申请人： NCSR "DEMOKRITOS" ,  Tsamis, Christos ,  Tserepi, Angeliki ,  Nassiopoulou, Androula G.

发明人： TSAMIS, Christos, NCSR "Demokritos" ,  TSEREPI, Angeliki, NCSR "Demokritos" ,  NASSIOPOULOU, Androula, G., NCSR "Demokritos"

IPC分类号： B81B3/00 ,  G01F1/684 ,  H05B1/00

CPC分类号： H05B3/265 ,  B81B2201/0278 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C1/00682 ,  B81C1/0069 ,  B81C2201/0115 ,  G01F1/6845 ,  G01N27/12 ,  G01N27/16 ,  G01N27/18

摘要： This invention provides a front-side silicon micromachining process for the fabrication of suspended Porous Silicon membranes in the form of bridges or cantilevers and of thermal sensor devices employing these membranes. The fabrication of the suspended Porous Silicon membranes comprises the following steps: (a) formation of a Porous Silicon layer (2) in, at least one, predefined area of a Silicon substrate (1), (b) definition of etch windows (5) around or inside said Porous Silicon layer (2) using standard photolithography and (c) selective etching of the Silicon substrate (1), underneath the Porous Silicon layer (2), by using dry etching techniques to provide release of the Porous Silicon membrane and to form a cavity (6) under the said Porous Silicon layer. Furthermore, the present invention provides a method for the fabrication of thermal sensors based on Porous Silicon membranes with minimal thermal losses, since the proposed methodology combines the advantages that result from the low thermal conductivity of Porous Silicon and the use of suspended membranes. Moreover, the front-side micromachining process proposed in the present invention simplifies the fabrication process. Various types of thermal sensor devices, such as calorimetric-type gas sensors, conductometric-type gas sensors and thermal conductivity sensors are described utilizing the proposed methodology.

公开(公告)号：EP1133684B1

公开(公告)日：2009-11-04

申请号：EP99956159.0

申请日：1999-11-26

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： JAUSSAUD, Claude ,  CLERC, Jean-Frédéric

IPC分类号： G01L9/00

CPC分类号： B81C1/0069 ,  B81B2201/0264 ,  B81B2203/0315 ,  G01L9/0042 ,  G01L9/0055

摘要： The invention concerns a micromachined structure capable of operating at high temperature, comprising a deformable membrane integral with a support deforming it. The membrane comprises at least a membrane layer (6) made of a material retaining its elasticity at said high operating temperature, the membrane layer supporting elements (10) detecting the membrane deformation made of semiconductor material, and has an electrically insulating interface with the detecting elements consisting of an electrically insulating layer (8). The support (5) is made of a material enabling the membrane to be released by a microelectronic technique.

公开(公告)号：EP2010449A1

公开(公告)日：2009-01-07

申请号：EP07727176.5

申请日：2007-03-21

申请人： Robert Bosch GmbH

发明人： FEYH, Ando

IPC分类号： B81B7/00 ,  B81C1/00 ,  H01L21/768

CPC分类号： B81B7/0006 ,  B81C1/0069 ,  H01L21/76898

摘要： The present invention describes wafer through-plating through a semiconductor substrate and a method for producing this wafer through-plating. In this case, at least one via hole is made in the front side of a semiconductor substrate in order to form the wafer through-plating using a trench etching process. The semiconductor material of the side wall of the via hole is then porously etched in an electrochemical etching process. A metal is introduced into the via hole in order to produce the electrical contact-making connection. In order to enable the electrical connection from the front side to the rear side of the semiconductor substrate, the via hole is opened from the rear side, for example by thinning the semiconductor substrate. In this case, this opening may be made before or after the metal is introduced into the via hole.

摘要翻译： 本发明描述了通过半导体衬底的晶片贯穿电镀以及用于通过电镀来生产该晶片的方法。 在这种情况下，为了使用沟槽蚀刻工艺形成晶片贯通电镀，在半导体衬底的正面上形成至少一个通孔。 然后在电化学蚀刻工艺中对通孔侧壁的半导体材料进行多孔蚀刻。 将金属引入通孔以产生电接触连接。 为了实现从半导体衬底的正面到背面的电连接，通孔例如通过减薄半导体衬底从背面开放。 在这种情况下，该开口可以在金属引入通孔之前或之后进行。

公开(公告)号：EP1597193A1

公开(公告)日：2005-11-23

申请号：EP03782094.1

申请日：2003-11-06

申请人： ROBERT BOSCH GMBH

发明人： FISCHER, Frank ,  PANNEK, Thorsten ,  METZGER, Lars

IPC分类号： B81C1/00

CPC分类号： B81C1/0069 ,  B81C2201/0115

摘要： Disclosed is a method for the production of a component comprising a semiconductor carrier (1), wherein porous semiconductor material (3) is produced to form at least one thermally decoupled structure. According to the invention, a recess or several recesses (5) is/are etched in the porous material (3) in order to produce at least one thermally decoupled area (6) which is defined by said one recess or several recesses (5). The thermally decouplable structure is then formed on the at least one area. The invention also relates to a component produced according to said method.

公开(公告)号：EP1417151A1

公开(公告)日：2004-05-12

申请号：EP02712117.7

申请日：2002-02-18

申请人： NCSR "DEMOKRITOS"

发明人： TSAMIS, Christos,NCSR "Demokritos" ,  TSEREPI, Angeliki,NCSR "Demokritos" ,  NASSIOPOULOU, Androula, G.,NCSR "Demokritos"

IPC分类号： B81B3/00 ,  G01F1/684 ,  H05B1/00

CPC分类号： H05B3/265 ,  B81B2201/0278 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C1/00682 ,  B81C1/0069 ,  B81C2201/0115 ,  G01F1/6845 ,  G01N27/12 ,  G01N27/16 ,  G01N27/18

摘要： This invention provides a front-side silicon micromachining process for the fabrication of suspended Porous Silicon membranes in the form of bridges or cantilevers and of thermal sensor devices employing these membranes. The fabrication of the suspended Porous Silicon membranes comprises the following steps: (a) formation of a Porous Silicon layer (2) in, at least one, predefined area of a Silicon substrate (1), (b) definition of etch windows (5) around or inside said Porous Silicon layer (2) using standard photolithography and (c) selective etching of the Silicon substrate (1), underneath the Porous Silicon layer (2), by using dry etching techniques to provide release of the Porous Silicon membrane and to form a cavity (6) under the said Porous Silicon layer. Furthermore, the present invention provides a method for the fabrication of thermal sensors based on Porous Silicon membranes with minimal thermal losses, since the proposed methodology combines the advantages that result from the low thermal conductivity of Porous Silicon and the use of suspended membranes. Moreover, the front-side micromachining process proposed in the present invention simplifies the fabrication process. Various types of thermal sensor devices, such as calorimetric-type gas sensors, conductometric-type gas sensors and thermal conductivity sensors are described utilizing the proposed methodology.

公开(公告)号：EP3095755A1

公开(公告)日：2016-11-23

申请号：EP16168459.2

申请日：2016-05-04

申请人： Honeywell International Inc.

发明人： REINKE, John ,  LODDEN, Grant

IPC分类号： B81B7/00 ,  B81C1/00

CPC分类号： B81B7/0019 ,  B81B3/0081 ,  B81B7/0087 ,  B81B2201/0228 ,  B81B2201/025 ,  B81C1/0069 ,  H02N1/00

摘要： A method for fabricating a thermally isolated microelectromechanical system (MEMS) structure is provided. The method includes processing a first wafer of a first material with a glass wafer to form a composite substrate including at least one sacrificial structure of the first material and glass; forming a MEMS device in a second material; forming at least one temperature sensing element on at least one of: the composite substrate; and the MEMS device; and etching away the at least one sacrificial structure of the first material in the composite substrate to form at least one thermally isolating glass flexure. The MEMS device is thermally isolated on a thermal isolation stage by the at least one thermally isolating glass flexure. The at least one temperature sensing element in on a respective at least one of: the thermal isolation stage; and the MEMS device.

摘要翻译： 提供了一种用于制造热隔离微机电系统（MEMS）结构的方法。 该方法包括用玻璃晶片处理第一材料的第一晶片以形成包括第一材料和玻璃的至少一个牺牲结构的复合衬底; 在第二材料中形成MEMS器件; 在所述复合衬底中的至少一个上形成至少一个温度感测元件; 和MEMS器件; 并且蚀刻所述复合衬底中的所述第一材料的所述至少一个牺牲结构以形成至少一个热隔离玻璃弯曲部。 MEMS器件通过至少一个隔热玻璃弯曲件在热隔离台上热隔离。 所述至少一个温度感测元件位于以下各自中的至少一个中：热隔离级; 和MEMS器件。