公开(公告)号：EP3402393A1

公开(公告)日：2018-11-21

申请号：EP17705487.1

申请日：2017-01-13

Applicant: King Abdullah University of Science and Technology

Inventor： NASSAR, Joanna Mohammad ,  SEVILLA, Galo Andres Torres ,  HUSSAIN, Muhammad Mustafa

IPC: A61B5/01 ,  B81C1/00 ,  G01P15/08

CPC classification number: A61B5/01 ,  A61B2562/0219 ,  A61B2562/0247 ,  A61B2562/0257 ,  A61B2562/0271 ,  A61B2562/028 ,  A61B2562/029 ,  A61B2562/125 ,  B01L3/502707 ,  B01L2300/0663 ,  B01L2300/126 ,  B01L2400/0406 ,  B81B2201/0214 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81C1/00166 ,  G01D21/00 ,  G01L1/142 ,  G01N27/12 ,  G01N27/223 ,  H03K17/955 ,  H03K17/962 ,  H03K2217/960755

Abstract: A flexible and non-functionalized low cost paper-based electronic system platform fabricated from common paper, such as paper based sensors, and methods of producing paper based sensors, and methods of sensing using the paper based sensors are provided. A method of producing a paper based sensor can include the steps of: a) providing a conventional paper product to serve as a substrate for the sensor or as an active material for the sensor or both, the paper product not further treated or functionalized; and b) applying a sensing element to the paper substrate, the sensing element selected from the group consisting of a conductive material, the conductive material providing contacts and interconnects, sensitive material film that exhibits sensitivity to pH levels, a compressible and/or porous material disposed between a pair of opposed conductive elements, or a combination of two of more said sensing elements. The method of sensing can further include measuring, using the sensing element, a change in resistance, a change in voltage, a change in current, a change in capacitance, or a combination of any two or more thereof.

公开(公告)号：EP3228583A1

公开(公告)日：2017-10-11

申请号：EP15866031.6

申请日：2015-08-20

Applicant: CSMC Technologies Fab1 Co., Ltd.

Inventor： JING, Errong

IPC: B81B7/02 ,  B81C1/00

CPC classification number: B81B7/02 ,  B81B2201/0278 ,  B81B2203/0118 ,  B81C1/00 ,  B81C1/0015 ,  B81C2201/0197 ,  G01J1/04 ,  G01J1/42 ,  G01J5/024 ,  G01J5/0853

Abstract: A method for manufacturing a MEMS double-layer suspension microstructure comprises steps of: forming a first film body (310) on a substrate (100), and a cantilever beam (320) connected to the substrate (100) and the first film body (310); forming a sacrificial layer (400) on the first film body (310) and the cantilever beam (320); patterning the sacrificial layer (400) located on the first film body (310) to manufacture a recessed portion (410) used for forming a support structure (520), the bottom of the recessed portion (410) being exposed of the first film body (310); depositing a dielectric layer (500) on the sacrificial layer (400); patterning the dielectric layer (500) to manufacture a second film body (510) and the support structure (520), the support structure (520) being connected to the first film body (310) and the second film body (510); and removing the sacrificial layer (400) to obtain the MEMS double-layer suspension microstructure.

Abstract translation: 一种制造MEMS双层悬浮微结构的方法包括以下步骤：在衬底（100）上形成第一膜体（310）;以及连接到衬底（100）和第一膜体（100）的悬臂梁（320） 310）; 在所述第一膜体（310）和所述悬臂梁（320）上形成牺牲层（400）; 图案化位于第一膜体（310）上的牺牲层（400）以制造用于形成支撑结构（520）的凹陷部分（410），凹陷部分（410）的底部暴露于第一膜体 （310）; 在牺牲层（400）上沉积介电层（500）; 图案化介电层500以制造第二膜体510和支撑结构520，支撑结构520连接到第一膜体310和第二膜体510; 并去除牺牲层（400）以获得MEMS双层悬浮微结构。

公开(公告)号：EP3140246A4

公开(公告)日：2017-04-26

申请号：EP15788858

申请日：2015-05-08

Applicant: INVENSENSE INC

Inventor： TSAI JULIUS MING-LIN ,  CAGDASER BARIS ,  LIM MARTIN ,  KHENKIN ALEKSEY S

IPC: B81C1/00 ,  B81B7/02 ,  G01L23/08

CPC classification number: B81B7/02 ,  B81B2201/0214 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2201/0292 ,  B81B2207/012 ,  B81B2207/07 ,  B81C1/0023 ,  B81C2203/0792 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/16152 ,  H04R1/04 ,  H04R19/04 ,  H04R29/004 ,  H04R2201/003 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An integrated package of at least one environmental sensor and at least one MEMS acoustic sensor is disclosed. The package contains a shared port that exposes both sensors to the environment, wherein the environmental sensor measures characteristics of the environment and the acoustic sensor measures sound waves. The port exposes the environmental sensor to an air flow and the acoustic sensor to sound waves. An example of the acoustic sensor is a microphone and an example of the environmental sensor is a humidity sensor.

Abstract translation: 公开了至少一个环境传感器和至少一个MEMS声学传感器的集成包。 该软件包包含一个共享端口，可将两个传感器暴露于环境中，其中环境传感器测量环境的特性，声波传感器测量声波。 该端口将环境传感器暴露于空气流中，并将声音传感器暴露于声波中。 声学传感器的一个例子是麦克风，环境传感器的一个例子是湿度传感器。

公开(公告)号：EP3010315A1

公开(公告)日：2016-04-20

申请号：EP14189248.9

申请日：2014-10-16

Applicant: Nokia Technologies OY

Inventor： Cotton, Darryl Paul James ,  Robinson, Adam ,  Andrew, Piers

IPC: H05K1/02

CPC classification number: B81B7/0054 ,  B81B2201/0278 ,  B81B2201/0292 ,  H05K1/0283 ,  H05K1/167 ,  H05K2201/09018 ,  H05K2201/09109 ,  H05K2201/09263 ,  H05K2201/10151

Abstract: An apparatus and method wherein the method comprises: a deformable substrate; a curved support structure configured to support at least a portion of a resistive sensor wherein the resistive sensor comprises a first electrode, a second electrode and a resistive sensor material provided between the electrodes; at least one support configured to space the curved support structure from the deformable substrate so that when the deformable substrate is deformed the curved support structure is not deformed in the same way; wherein the resistive sensor is positioned on the curved support structure so as to limit deformation of the resistive sensor when the deformable substrate is deformed.

Abstract translation: 一种装置和方法，其中所述方法包括：可变形基板; 弯曲的支撑结构，其构造成支撑电阻式传感器的至少一部分，其中所述电阻式传感器包括设置在所述电极之间的第一电极，第二电极和电阻式传感器材料; 至少一个支撑件被构造成将弯曲的支撑结构与可变形基板隔开，使得当可变形的基板变形时，弯曲的支撑结构不会以相同的方式变形; 其中所述电阻传感器位于所述弯曲的支撑结构上，以便当所述可变形基板变形时限制所述电阻式传感器的变形。

公开(公告)号：EP1333503B1

公开(公告)日：2011-07-06

申请号：EP03075166.3

申请日：2003-01-17

Applicant: Delphi Technologies, Inc.

Inventor： Chavan, Abhijeet V. ,  Logsdon, James H. ,  Chilcott, Dan W. ,  Christenson, John C. ,  Speck, Robert K.

IPC: H01L27/16 ,  H01L35/00 ,  B81B3/00 ,  G01J5/12 ,  G01J5/02

CPC classification number: B81B3/0072 ,  B81B2201/0278 ,  B81B2203/0127 ,  G01J5/02 ,  G01J5/024 ,  G01J5/12 ,  H01L27/16 ,  H01L2224/48463

公开(公告)号：EP1834162A1

公开(公告)日：2007-09-19

申请号：EP06705760.4

申请日：2006-01-04

Applicant: Universität Kassel

Inventor： RANGELOW, Ivo ,  IVANOV, Tzvetan ,  IVANOVA, Katerina

IPC: G01J5/40

CPC classification number: G01J5/40 ,  B81B3/0018 ,  B81B2201/0278 ,  G01J5/44

Abstract: A microsystem component with a device (3) deformable under the influence of temperature changes is disclosed. The device comprises at least one first (4, 5) and second (8) element with differing thermal expansion coefficients and different thermal conductivities. The elements (4, 5; 8) are physically separate and arranged and connected to each other such that the device (3) assumes flexure states which are dependent on the temperature.

公开(公告)号：EP2001062A9

公开(公告)日：2009-04-08

申请号：EP07740161.0

申请日：2007-03-28

Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)

Inventor： HIRANO, Takayuki ,  KAWAKAMI, Nobuyuki ,  KANNAKA, Masato

IPC: H01L37/00 ,  B81C1/00 ,  C23C16/42 ,  G01F1/692 ,  H01L35/34 ,  G01J1/02

CPC classification number: G01F1/692 ,  B81B2201/0278 ,  B81B2203/0127 ,  B81C1/00666 ,  B81C2201/0169 ,  B81C2201/0178 ,  C23C16/402 ,  C23C16/56 ,  Y10T428/24488 ,  Y10T428/24612

Abstract: It is intended to provide a membrane structure element that can be easily manufactured, has an excellent insulating property and high quality; and a method for manufacturing the membrane structure element. The manufacturing method is for manufacturing a membrane structure element including a membrane formed of a silicon oxide film and a substrate which supports the membrane in a hollow state by supporting a part of a periphery of the membrane. The method includes: a film formation step of forming a heat-shrinkable silicon oxide film 13 on a surface of a silicon substrate 2 by plasma CVD method; a heat treatment step of performing a heat treatment to cause the thermal shrinkage of the silicon oxide film 13 formed on the substrate 1; and a removal step of removing a part of the substrate 2 in such a manner that a membrane-corresponding part of the silicon oxide film 13 is supported as a membrane in a hollow state with respect to the substrate 2 to form a recessed part 4.

公开(公告)号：EP2001062A2

公开(公告)日：2008-12-10

申请号：EP07740161.0

申请日：2007-03-28

Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)

Inventor： HIRANO, Takayuki ,  KAWAKAMI, Nobuyuki ,  KANNAKA, Masato

IPC: H01L37/00 ,  B81C1/00 ,  C23C16/42 ,  G01F1/692 ,  H01L35/34 ,  G01J1/02

CPC classification number: G01F1/692 ,  B81B2201/0278 ,  B81B2203/0127 ,  B81C1/00666 ,  B81C2201/0169 ,  B81C2201/0178 ,  C23C16/402 ,  C23C16/56 ,  Y10T428/24488 ,  Y10T428/24612

Abstract: It is intended to provide a membrane structure element that can be easily manufactured, has an excellent insulating property and high quality; and a method for manufacturing the membrane structure element. The manufacturing method is for manufacturing a membrane structure element including a membrane formed of a silicon oxide film and a substrate which supports the membrane in a hollow state by supporting a part of a periphery of the membrane. The method includes: a film formation step of forming a heat-shrinkable silicon oxide film 13 on a surface of a silicon substrate 2 by plasma CVD method; a heat treatment step of performing a heat treatment to cause the thermal shrinkage of the silicon oxide film 13 formed on the substrate 1; and a removal step of removing a part of the substrate 2 in such a manner that a membrane-corresponding part of the silicon oxide film 13 is supported as a membrane in a hollow state with respect to the substrate 2 to form a recessed part 4.

Abstract translation: 本发明提供可以容易地制造的膜结构元件，具有优异的绝缘性和高质量; 和膜结构元件的制造方法。 该制造方法用于制造膜结构元件，该膜结构元件包括由氧化硅膜形成的膜和通过支撑膜周边的一部分而将膜支撑在中空状态的基板。 该方法包括：通过等离子体CVD法在硅衬底2的表面上形成热收缩氧化硅膜13的成膜步骤; 进行热处理以使形成在基板1上的氧化硅膜13的热收缩的热处理步骤; 以及去除基板2的一部分的去除步骤，使得氧化硅膜13的膜相应部分作为相对于基板2的中空状态的膜被支撑以形成凹部4。

公开(公告)号：EP1417151B9

公开(公告)日：2007-08-08

申请号：EP02712117.7

申请日：2002-02-18

Applicant: NCSR "DEMOKRITOS" ,  Tsamis, Christos ,  Tserepi, Angeliki ,  Nassiopoulou, Androula G.

Inventor： TSAMIS, Christos, NCSR "Demokritos" ,  TSEREPI, Angeliki, NCSR "Demokritos" ,  NASSIOPOULOU, Androula, G., NCSR "Demokritos"

IPC: B81B3/00 ,  G01F1/684 ,  H05B1/00

CPC classification number: H05B3/265 ,  B81B2201/0278 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C1/00682 ,  B81C1/0069 ,  B81C2201/0115 ,  G01F1/6845 ,  G01N27/12 ,  G01N27/16 ,  G01N27/18

Abstract: This invention provides a front-side silicon micromachining process for the fabrication of suspended Porous Silicon membranes in the form of bridges or cantilevers and of thermal sensor devices employing these membranes. The fabrication of the suspended Porous Silicon membranes comprises the following steps: (a) formation of a Porous Silicon layer (2) in, at least one, predefined area of a Silicon substrate (1), (b) definition of etch windows (5) around or inside said Porous Silicon layer (2) using standard photolithography and (c) selective etching of the Silicon substrate (1), underneath the Porous Silicon layer (2), by using dry etching techniques to provide release of the Porous Silicon membrane and to form a cavity (6) under the said Porous Silicon layer. Furthermore, the present invention provides a method for the fabrication of thermal sensors based on Porous Silicon membranes with minimal thermal losses, since the proposed methodology combines the advantages that result from the low thermal conductivity of Porous Silicon and the use of suspended membranes. Moreover, the front-side micromachining process proposed in the present invention simplifies the fabrication process. Various types of thermal sensor devices, such as calorimetric-type gas sensors, conductometric-type gas sensors and thermal conductivity sensors are described utilizing the proposed methodology.

Abstract translation: 本发明提供了用于制造桥或悬臂形式的悬浮多孔硅膜和采用这些膜的热传感器装置的正面硅微机械加工方法。 悬浮多孔硅膜的制造包括以下步骤：（a）在硅衬底（1）的至少一个预定义区域中形成多孔硅层（2），（b）蚀刻窗口（5） ）在所述多孔硅层（2）周围或内部使用标准光刻和（c）在所述多孔硅层（2）下方通过使用干法蚀刻技术选择性蚀刻所述硅衬底（1）以提供所述多孔硅膜 并在所述多孔硅层下方形成空腔（6）。 此外，本发明提供了一种制造基于多孔硅膜的热传感器的方法，其具有最小的热损失，因为所提出的方法结合了由多孔硅的低导热性和使用悬浮膜所产生的优点。 而且，本发明提出的正面微机械加工工艺简化了制造工艺。 利用所提出的方法描述了各种类型的热传感器装置，例如量热型气体传感器，电导型气体传感器和热导传感器。

公开(公告)号：EP1306348B1

公开(公告)日：2007-05-16

申请号：EP01125193.1

申请日：2001-10-24

Applicant: ROBERT BOSCH GMBH

Inventor： Artmann, Hans ,  Pannek, Thorsten

IPC: B81B3/00

CPC classification number: B81C1/0069 ,  B81B2201/0278 ,  B81B2203/0127 ,  B81C2201/0115 ,  B81C2201/0136