摘要:
In a connection panel for electronic components (1) comprising a plurality of insulating layers (8, 9, 2, 11, 12) and conductive layers (13, 14, 15) and further comprising an electronic sensor (4), the sensor (4) is comprised of at least one flexure member (4') formed by a flexure layer (2), the flexure member (4') protruding from the flexure layer (2) and into a clearance (3) within the flexure layer (2) and carrying at least a part of a flexure sensing device (6).
摘要:
A method for manufacturing an MEMS torsional electrostatic actuator comprises: providing a substrate (10), wherein the substrate (10) comprises a first silicon layer (100), a buried oxide layer (200) and a second silicon layer (300) that are laminated sequentially; patterning the first silicon layer (100) and exposing the buried oxide layer (200) to form a rectangular upper electrode plate (120) separated from a peripheral region (140), wherein the upper electrode plate (120) and the peripheral region (140) are connected by only using a cantilever beam (130), and forming, on the peripheral region (140), a recessed portion (110) exposing the buried oxide layer (200); patterning the second silicon layer (300) and exposing the buried oxide layer (200) to form a back cavity (310), wherein the back cavity (310) is located in a region of the second silicon layer (300) corresponding to the upper electrode plate (120), covers 40% to 60% of the area of the region corresponding to the upper electrode plate (120), and is close to one end of the cantilever beam (130); exposing the second silicon layer (300), and suspending the upper electrode plate (120) and the cantilever beam (130); and respectively forming an upper contact electrode (400) and a lower contact electrode (500) on the second silicon layer (300).
摘要:
A wafer structure comprising a first substrate comprising a cover wafer, the first substrate including at least one patterned germanium layer; and a second substrate, the second substrate including at least one patterned aluminum layer; characterized in that the at least one patterned germanium layer is bonded to a first portion of the at least one patterned aluminum layer to provide a eutectic alloy and create an electrical and mechanical contact; characterized in that a second portion of the at least one patterned aluminum layer is not bonded to the at least one patterned germanium layer and forms an external bond pad; and characterized in that the first substrate and second substrate form a cavity containing a MEMS structure within the bonded at least one germanium layer and first portion of the at least one patterned aluminum layer.
摘要:
Procédé d'encapsulation d'un dispositif microélectronique (100), comportant les étapes suivantes : - réalisation d'une portion sacrificielle recouvrant le dispositif ; - réalisation d'un capot (106) recouvrant la portion sacrificielle, comportant deux couches (108, 110) superposées de matériaux distincts et ayant des contraintes résiduelles et/ou des coefficients de dilatation thermique différents ; - gravure, à travers le capot, d'une tranchée (112) dont le motif comporte une courbe et/ou deux segments droits non parallèles ; - gravure de la portion sacrificielle à travers la tranchée ; - dépôt d'un matériau de bouchage sur la tranchée ; dans lequel, lors de la gravure de la portion sacrificielle, une portion (116) du capot définie par la tranchée se déforme sous l'effet d'une contrainte mécanique engendrée par les contraintes résiduelles et/ou une dilatation thermique des couches du capot et augmente les dimensions de la tranchée, cette contrainte étant supprimée avant le bouchage de la tranchée.
摘要:
Systems and methods for processing sacrificial layers in MEMS device fabrication are provided. In one embodiment, a method comprises: applying a patterned layer of Aerogel material onto a substrate to form an Aerogel sacrificial layer; applying at least one non-sacrificial silicon layer over the Aerogel sacrificial layer, wherein the non-sacrificial silicon layer is coupled to the substrate through one or more gaps provided in the patterned layer of Aerogel material; and removing the Aerogel sacrificial layer by exposing the Aerogel sacrificial layer to a removal liquid.
摘要:
Embodiments show a method for fabricating a cavity structure, a semiconductor structure, a cavity structure for a semiconductor device and a semiconductor microphone fabricated by the same. In some embodiments the method for fabricating a cavity structure comprises providing a first layer, depositing a carbon layer on the first layer, covering at least partially the carbon layer with a second layer to define the cavity structure, removing by means of dry etching the carbon layer between the first and second layer so that the cavity structure is formed.
摘要:
In a method of manufacturing a capacitive electromechanical transducer, a first electrode (8) is formed on a substrate (4), an insulating layer (9) which has an opening (6) leading to the first electrode is formed on the first electrode (8), and a sacrificial layer is formed on the insulating layer. A membrane (3) having a second electrode (1) is formed on the sacrificial layer, and an aperture is provided as an etchant inlet in the membrane. The sacrificial layer is etched to form a cavity (10), and then the aperture serving as an etchant inlet is sealed. The etching is executed by electrolytic etching in which a current is caused to flow between the first electrode (8) and an externally placed counter electrode through the opening (6) and the aperture of the membrane.