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    TRYPTASE ACTIVITY MEASUREMENT SUBSTRATE
    2.
    发明公开
    TRYPTASE ACTIVITY MEASUREMENT SUBSTRATE 审中-公开

    公开(公告)号：EP4026911A1

    公开(公告)日：2022-07-13

    申请号：EP20861179.8

    申请日：2020-09-04

    申请人： National University Corporation Tokyo University Of Agriculture and Technology ,  Peptide Support Co. Ltd.

    发明人： MATSUDA, Hiroshi ,  NISHINO, Norikazu

    IPC分类号： C12Q1/37

    摘要： An object of the present invention is to provide a method for measuring tryptase activity in a blood sample accurately and rapidly by a convenient operation in order to accurately evaluate the state of a disease whose state involves mast cells. The present invention enables tryptase activity in a blood sample to be directly measured without the pretreatment, such as purification or concentration, of the blood sample, using a substrate for measuring tryptase activity, comprising a tripeptide C-terminally linked through a peptide bond to a dye label, selected from the following formulas (1) to (3): (1) Lys-Ala-Arg-X, (2) Ala-Ala-Arg-X, and (3) Abu-Ala-Arg-X (wherein X represents a dye label whose fluorescence characteristics or color development characteristics change upon the cleavage of the peptide bond with Arg, and Abu represents 2-aminobutyric acid) .

    NOVEL ALIPHATIC POLYCARBONATE
    4.
    发明公开
    NOVEL ALIPHATIC POLYCARBONATE 审中-公开

    公开(公告)号：EP3680271A1

    公开(公告)日：2020-07-15

    申请号：EP18849982.6

    申请日：2018-09-03

    申请人： National University Corporation Tokyo University of Agriculture and Technology ,  Sumitomo Seika Chemicals Co., Ltd.

    发明人： NAKANO, Koji ,  NISHIOKA, Kiyoshi

    IPC分类号： C08G64/02 ,  C08K3/00 ,  C08L69/00

    摘要： The present invention provides an aliphatic polycarbonate that can be thermally decomposed (dewaxed) at a relatively low temperature. The aliphatic polycarbonate comprises a constituent unit represented by formula (1):

    wherein R 1 , R 2 , and R 3 are identical or different, and each represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 15 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 20 carbon atoms; R 4 represents a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 20 carbon atoms; and n is an integer of 0 to 3.

    SEMICONDUCTOR SUBSTRATE, AND EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME
    5.
    发明公开
    SEMICONDUCTOR SUBSTRATE, AND EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME 审中-公开

    公开(公告)号：EP3396030A1

    公开(公告)日：2018-10-31

    申请号：EP16875325.9

    申请日：2016-11-16

    申请人： Tamura Corporation ,  National University Corporation Tokyo University Of Agriculture and Technology

    发明人： GOTO, Ken ,  KUMAGAI, Yoshinao ,  MURAKAMI, Hisashi

    IPC分类号： C30B29/16

    CPC分类号： C30B29/16

    摘要： [Problem] To provide: a semiconductor substrate comprising a β-Ga 2 O 3 -based single crystal, with which an epitaxial layer comprising the β-Ga 2 O 3 -based single crystal can be grown by the HVPE method at a high growth rate, or with which an epitaxial layer comprising the β-Ga 2 O 3 -based single crystal having good surface morphology can be grown; an epitaxial wafer having the semiconductor substrate and an epitaxial layer; and a method for producing the epitaxial wafer. [Solution] One embodiment is a semiconductor substrate 11 which is used as an underlying substrate for epitaxial crystal growth carried out by the HVPE method, wherein the semiconductor substrate 11 comprises a β-Ga2O3-based single crystal, and a plane parallel to the [100] axis of the β-Ga2O3-based single crystal is a principal plane 12.

    THERMALLY DECOMPOSABLE BINDER
    7.
    发明公开
    THERMALLY DECOMPOSABLE BINDER 审中-公开
    热分解粘合剂

    公开(公告)号：EP3266832A1

    公开(公告)日：2018-01-10

    申请号：EP15883997.7

    申请日：2015-09-02

    申请人： National University Corporation Tokyo University Of Agriculture and Technology ,  Sumitomo Seika Chemicals Co., Ltd.

    发明人： NAKANO, Koji ,  NISHIOKA, Kiyoshi ,  SUZUKI, Masahiro ,  FUJIMOTO, Nobutaka

    IPC分类号： C08L69/00 ,  C08G64/02 ,  C08G64/42 ,  C08K3/00

    摘要： A thermally decomposable binder containing an aliphatic polycarbonate resin containing a constituting unit represented by the formula (1):

    wherein each of R 1 , R 2 and R 3 , which may be identical or different, is a hydrogen atom, an alkyl group having from 1 to 10 carbon atoms, or an aryl group having from 6 to 20 carbon atoms; and n is 1 or 2. The thermally decomposable binder and the fine inorganic particle-dispersed paste composition, each containing an aliphatic polycarbonate resin of the present invention can be used in general molded articles, optical materials such as films, fibers, optical fibers, and optical disks, thermally decomposable materials such as ceramic binders, and lost foam casting, medicinal materials such as drug capsules, additives for biodegradable resins, main components for biodegradable resins, and the like.

    摘要翻译： 一种含有脂肪族聚碳酸酯树脂的热分解性粘合剂，所述脂肪族聚碳酸酯树脂含有式（1）所示的结构单元，式中，R 1，R 2和R 3分别可以相同也可以不同，为氢原子，1〜10的烷基 碳原子或具有6至20个碳原子的芳基; n为1或2.含有本发明的脂肪族聚碳酸酯树脂的热分解性粘合剂和无机粒子分散微细糊剂组合物可以用于一般的成型品，膜，光纤，光纤等光学材料， 和光盘，诸如陶瓷粘合剂的可热分解材料和消失模铸造，诸如药物胶囊的药物材料，用于生物降解性树脂的添加剂，用于生物降解性树脂的主要组分等。

    CELL TRAPPING DEVICE
    9.
    发明公开
    CELL TRAPPING DEVICE 审中-公开
    ZELL截留VORRICHTUNG

    公开(公告)号：EP2818542A1

    公开(公告)日：2014-12-31

    申请号：EP12864324.4

    申请日：2012-12-28

    申请人： Hitachi Chemical Company, Ltd. ,  National University Corporation Tokyo University Of Agriculture and Technology

    发明人： KIKUHARA Yoshihito ,  KANBARA Hisashige ,  SUZUKI Takahiro ,  MATSUNAGA Tadashi ,  YOSHINO Tomoko ,  HOSOKAWA Masahito

    IPC分类号： C12M1/28

    CPC分类号： G01N1/4005 ,  B01L3/502753 ,  B01L2300/0681 ,  B01L2300/0874 ,  C12M47/02 ,  G01N15/0272 ,  G01N15/06 ,  G01N2001/4088 ,  G01N2015/0065

    摘要： A cell trapping device includes a housing that includes an inlet opening connected to an inlet line through which a cell dispersion liquid is introduced and an outlet opening connected to an outlet line through which the cell dispersion liquid is discharged; and a filter which is positioned within the housing and includes a trapping region for trapping cancer cells contained in the cell dispersion liquid. The filter is bonded to the housing, at least a part of the trapping region is formed of an observation region for observing the trapping region from the outside, the inlet line and the inlet opening are arranged at outer positions than the observation region when viewed from a normal line direction of the filter, and the inlet line is extended along an in-plane direction of the filter.

    摘要翻译： 细胞捕获装置包括：壳体，其包括连接到入口线的入口开口，细胞分散液通过所述入口引入，并且出口开口连接到排出细胞分散液体的出口线; 以及位于壳体内并且包含用于捕获包含在细胞分散液中的癌细胞的捕获区域的过滤器。 过滤器结合到壳体，捕集区域的至少一部分由用于从外部观察捕获区域的观察区域形成，入口管线和入口开口布置在比从观察区域观察的外部位置 过滤器的法线方向，并且入口管线沿着过滤器的面内方向延伸。

    N-type conductive aluminum nitride semiconductor crystal and manufacturing method thereof
    10.
    发明公开
    N-type conductive aluminum nitride semiconductor crystal and manufacturing method thereof 有权
    N型导电氮化铝半导体晶体及其制造方法

    公开(公告)号：EP2725124A1

    公开(公告)日：2014-04-30

    申请号：EP14150924.0

    申请日：2008-02-05

    申请人： National University Corporation Tokyo University of Agriculture and Technology ,  Tokuyama Corporation

    发明人： Koukitu, Akinori ,  Kumagai, Yoshinao ,  Nagashima, Toru ,  Takada, Kazuya ,  Yanagi, Hiroyuki

    IPC分类号： C30B29/38 ,  C23C16/01 ,  C23C16/34 ,  C30B25/18 ,  H01L21/205 ,  H01L33/00 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02

    CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/007

    摘要： This invention provides a selfsupporting substrate which consists of a n-type conductive aluminum nitride semiconductor crystal and is useful for manufacturing the vertical conductive type AlN semiconductor device.
    The n-type conductive aluminum nitride semiconductor crystal, by which the selfsupporting substrate is made up, contains Si atom at a concentration of 1×10 18 to 5×10 20 cm -3 , is substantially free from halogen atoms, and substantially does not absorb the light having the energy of not more than 5.9 eV. The selfsupporting substrate can be obtained by a method comprising the steps of forming an AlN crystal layer on a single crystal substrate such as a sapphire by the HVPE method, preheating the obtained substrate having the AlN crystal layer to a temperature of 1,200°C or more, forming a second layer consisting of the n-type conductive aluminum nitride semiconductor crystal is formed on the AlN crystal layer in high rate by the HVPE method and separating the second layer from the obtained laminate.

    摘要翻译： 本发明提供一种由n型导电氮化铝半导体晶体构成的自支撑衬底，并且可用于制造垂直导电型AlN半导体器件。 构成自支撑衬底的n型导电氮化铝半导体晶体含有浓度为1×1018至5×1020cm-3的Si原子，基本不含卤素原子，并且基本上不吸收 能量不超过5.9eV的光。 自支撑衬底可通过包括以下步骤的方法获得：通过HVPE方法在诸如蓝宝石的单晶衬底上形成AlN晶体层，将具有AlN晶体层的所获衬底预热至1200℃或更高的温度 通过HVPE法在AlN晶体层上高速地形成由n型导电性氮化铝半导体结晶构成的第二层，并从所得到的层叠体剥离第二层。