公开(公告)号：EP4356431A1

公开(公告)日：2024-04-24

申请号：EP21733935.7

申请日：2021-06-14

申请人： Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen

发明人： KÜNNE, Matthias ,  SCHREIBER, Lars

IPC分类号： H01L29/76 ,  H01L29/40 ,  H01L29/423 ,  H01L29/12 ,  H01L21/334 ,  B82Y10/00 ,  B82Y40/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01L29/66977 ,  H01L29/7613 ,  H01L29/423 ,  H01L29/122 ,  H01L29/401

公开(公告)号：EP4356417A1

公开(公告)日：2024-04-24

申请号：EP21733936.5

申请日：2021-06-14

申请人： Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen

发明人： KÜNNE, Matthias ,  SCHREIBER, Lars

IPC分类号： H01L21/334 ,  H01L29/76 ,  H01L29/40 ,  H01L29/423 ,  H01L29/12 ,  H01L29/66 ,  B82Y10/00 ,  B82Y40/00

CPC分类号： H01L29/66977 ,  H01L29/7613 ,  H01L29/122 ,  B82Y10/00 ,  B82Y40/00

公开(公告)号：EP3198650A4

公开(公告)日：2018-05-16

申请号：EP14902459

申请日：2014-09-26

申请人： INTEL CORP

发明人： RIOS RAFAEL ,  KUHN KELIN J ,  KIM SEIYON ,  WEBER JUSTIN R

IPC分类号： H01L29/78 ,  H01L21/335 ,  H01L29/12 ,  H01L29/16 ,  H01L29/66 ,  H01L29/775 ,  H01L49/00

CPC分类号： H01L29/66439 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/122 ,  H01L29/16 ,  H01L29/20 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42364 ,  H01L29/4238 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/775 ,  H01L29/778 ,  H01L29/78636 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696 ,  H01L49/00

摘要： Embodiments of the invention include metal oxide metal field effect transistors (MOMFETs) and methods of making such devices. In embodiments, the MOMFET device includes a source and a drain with a channel disposed between the source and the drain. According to an embodiment, the channel has at least one confined dimension that produces a quantum confinement effect in the channel. In an embodiment, the MOMFET device also includes a gate electrode that is separated from the channel by a gate dielectric. According to embodiments, the band-gap energy of the channel may be modulated by changing the size of the channel, the material used for the channel, and/or the surface termination applied to the channel. Embodiments also include forming an type device and a P-type device by controlling the work-function of the source and drain relative to the conduction band and valance band energies of the channel.

公开(公告)号：EP2608268A1

公开(公告)日：2013-06-26

申请号：EP11194254.6

申请日：2011-12-19

申请人： NXP B.V. ,  Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Mueller, Markus ,  Heringa, Anco

IPC分类号： H01L29/778 ,  H01L29/872 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205

CPC分类号： H01L29/1054 ,  H01L21/02104 ,  H01L29/0657 ,  H01L29/122 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/7786 ,  H01L29/872

摘要： A semiconductor device and a method of making the same. The device includes a semiconductor substrate having an AlGaN layer on a GaN layer. The device also includes first contact and a second contact. The average thickness of the AlGaN layer varies between the first contact and the second contact, for modulating the density of an electron gas in the GaN layer between the first contact and the second contact.

摘要翻译： 一种半导体器件及其制造方法。 该器件包括在GaN层上具有AlGaN层的半导体衬底。 该装置还包括第一触点和第二触点。 为了调制第一触点和第二触点之间的GaN层中的电子气的密度，AlGaN层的平均厚度在第一触点和第二触点之间变化。

公开(公告)号：EP1187219A1

公开(公告)日：2002-03-13

申请号：EP00307579.3

申请日：2000-09-01

申请人： BTG INTERNATIONAL LIMITED

发明人： XU, Hongqi ,  WORSCHECH, Lukas, Maria Dietmar ,  SAMUELSON, Lars Ivar ,  FORCHEL, Alfred

IPC分类号： H01L29/76 ,  H01L29/66 ,  H01L29/772

CPC分类号： B82Y10/00 ,  H01L29/122 ,  H01L29/66977 ,  H01L29/7606

摘要： An electronic device of nanometric dimensions which exhibits non-linear transistor or rectifying action comprises a region (40) fabricated to provide ballistic transport properties for electron flow, with ballistic junctions (42, 44, 46) formed in region (40), each junction exhibiting quantum states with an associated electrochemical potential and a voltage dependent transmissivity. An alternating voltage may be applied across junctions (44, 46), and a rectified voltage is developed at junction (42). Alternatively, a constant voltage may be applied to terminal (44), to modulate the characteristics of electron flow through junctions (42, 46), in a transistor-like manner.

摘要翻译： 具有非线性晶体管或整流作用的纳米尺寸的电子器件包括制造成为电子流动提供弹道输送特性的区域（40），以及形成在区域（40）中的弹道接头（42,44,46） 表现出具有相关电化学电位和电压依赖透射率的量子态。 可以在结（44,46）之间施加交流电压，并且在结（42）处产生整流电压。 或者，可以将恒定电压施加到端子（44），以晶体管状的方式调制通过结（42,46）的电子流的特性。

公开(公告)号：EP0581239A3

公开(公告)日：1994-08-17

申请号：EP93111977.0

申请日：1993-07-28

申请人： Hughes Aircraft Company

发明人： Schulman, Joel N. ,  Chow, David H.

IPC分类号： H01L29/88

CPC分类号： B82Y10/00 ,  H01L29/122 ,  H01L29/882

摘要： A double barrier tunnel diode (10) has a quantum well (12), a pair of electron injection layers (16) on either side of the quantum well (12), and a barrier layer (14) between each of the electron injection layers (16) and the quantum well (12), in a strained biaxial epitaxial relationship with the quantum well (12). The material is chosen such that the biaxial strain is sufficient to reduce the energy of heavy holes in the quantum well (12) to less than the energy of the conduction band minimum energy of the electron injection layers (16).

摘要翻译： 双势垒隧道二极管（10）具有量子阱（12），量子阱（12）两侧的一对电子注入层（16）和每个电子注入层之间的阻挡层（14） （16）和量子阱（12）在与量子阱（12）的应变双轴向外延关系中。 选择材料使得双轴应变足以将量子阱（12）中的重孔的能量减小到小于电子注入层（16）的导带最小能量的能量。

公开(公告)号：EP3198650A1

公开(公告)日：2017-08-02

申请号：EP14902459.8

申请日：2014-09-26

申请人： Intel Corporation

发明人： RIOS, Rafael ,  KUHN, Kelin J. ,  KIM, Seiyon ,  WEBER, Justin R.

IPC分类号： H01L29/78 ,  H01L21/335

CPC分类号： H01L29/66439 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/122 ,  H01L29/16 ,  H01L29/20 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42364 ,  H01L29/4238 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/775 ,  H01L29/778 ,  H01L29/78636 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696 ,  H01L49/00

摘要： Embodiments of the invention include metal oxide metal field effect transistors (MOMFETs) and methods of making such devices. In embodiments, the MOMFET device includes a source and a drain with a channel disposed between the source and the drain. According to an embodiment, the channel has at least one confined dimension that produces a quantum confinement effect in the channel. In an embodiment, the MOMFET device also includes a gate electrode that is separated from the channel by a gate dielectric. According to embodiments, the band-gap energy of the channel may be modulated by changing the size of the channel, the material used for the channel, and/or the surface termination applied to the channel. Embodiments also include forming an type device and a P-type device by controlling the work-function of the source and drain relative to the conduction band and valance band energies of the channel.

摘要翻译： 本发明的实施例包括金属氧化物金属场效应晶体管（MOMFET）以及制造这种器件的方法。 在实施例中，MOMFET器件包括具有设置在源极和漏极之间的沟道的源极和漏极。 根据一个实施例，通道具有至少一个限制尺寸，其在通道中产生量子限制效应。 在一个实施例中，MOMFET器件还包括通过栅极电介质与沟道分开的栅电极。 根据实施例，可以通过改变通道的尺寸，用于通道的材料和/或施加到通道的表面终端来调节通道的带隙能量。 实施例还包括通过相对于沟道的导带和价带能量控制源极和漏极的功函数来形成N型器件和P型器件。

公开(公告)号：EP2355158B1

公开(公告)日：2017-04-26

申请号：EP11000710.1

申请日：2011-01-28

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Passlack, Matthias

IPC分类号： H01L29/778 ,  H01L29/205 ,  H01L29/43 ,  H01L29/201 ,  H01L29/51

CPC分类号： H01L29/7787 ,  B82Y10/00 ,  H01L21/8252 ,  H01L27/088 ,  H01L27/092 ,  H01L29/122 ,  H01L29/155 ,  H01L29/20 ,  H01L29/201 ,  H01L29/205 ,  H01L29/432 ,  H01L29/517 ,  H01L29/7783 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/1844

摘要： A uni-terminal transistor device is described. In one embodiment, an n-channel transistor comprises a first semiconductor layer having a discrete hole level H 0 ; a second semiconductor layer having a conduction band minimum E C2 ; a wide bandgap semiconductor barrier layer disposed between the first and the second semiconductor layers; a gate dielectric layer disposed above the first semiconductor layer; and a gate metal layer disposed above the gate dielectric layer and having an effective workfunction selected to position the discrete hole level H 0 below the conduction band minimum E c2 for zero bias applied to the gate metal layer and to obtain n-terminal characteristics.

摘要翻译： 描述了单端晶体管器件。 在一个实施例中，n沟道晶体管包括具有离散的空穴电平H 0的第一半导体层; 具有导带最小值E C2的第二半导体层; 设置在第一和第二半导体层之间的宽带隙半导体阻挡层; 设置在所述第一半导体层上方的栅极电介质层; 以及栅极金属层，设置在栅极电介质层上方并且具有选择的有效功函数，以将离散的空穴电平H 0定位在导带最小值E c2以下，用于施加到栅极金属层的零偏压并且获得n端子特性。

公开(公告)号：EP2608268B1

公开(公告)日：2017-04-19

申请号：EP11194254.6

申请日：2011-12-19

申请人： Nexperia B.V. ,  Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Mueller, Markus ,  Heringa, Anco

IPC分类号： H01L29/778 ,  H01L29/872 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205

CPC分类号： H01L29/1054 ,  H01L21/02104 ,  H01L29/0657 ,  H01L29/122 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/7786 ,  H01L29/872

公开(公告)号：EP2507820B1

公开(公告)日：2016-06-01

申请号：EP10835241.0

申请日：2010-12-04

申请人： Sensor Electronic Technology, Inc.

发明人： SHATALOV, Maxim, S. ,  GASKA, Remigijus ,  YANG, Jinwei ,  SHUR, Michael

IPC分类号： H01L29/15 ,  H01L29/201 ,  H01L33/06 ,  H01L29/20 ,  H01L33/32

CPC分类号： H01L29/122 ,  B82Y10/00 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/201 ,  H01L33/06 ,  H01L33/32