PLASMA GENERATION USING MULTI-STEP IONIZATION
    2.
    发明公开
    PLASMA GENERATION USING MULTI-STEP IONIZATION 审中-公开
    等离子体生成多步骤电离

    公开(公告)号:EP1614136A2

    公开(公告)日:2006-01-11

    申请号:EP04716928.9

    申请日:2004-03-03

    申请人: Zond, Inc.

    发明人: CHISTYAKOV, Roman

    IPC分类号: H01J37/00

    摘要: The present invention relates to a plasma generator that generates a plasma with a multi-step ionization process. The plasma generator includes an excited atom source that generates excited atoms from ground state atoms supplied by a feed gas source. A plasma chamber confines a volume of excited atoms generated by the excited atom source. An energy source is coupled to the volume of excited atoms confined by the plasma chamber. The energy source raises an energy of excited atoms in the volume of excited atoms so that at least a portion of the excited atoms in the volume of excited atoms is ionized, thereby generating a plasma with a multi-step ionization process.

    摘要翻译: 本发明涉及一种利用多步骤电离过程产生等离子体的等离子体发生器。 等离子体发生器包括激发原子源,其由来自原料气源的基态原子产生激发原子。 等离子体室限制激发原子源产生的激发原子的体积。 能量源被耦合到由等离子体室限制的激发原子的体积。 能量源在被激发原子的体积中提高激发原子的能量,使得激发原子体积中的至少一部分激发原子被电离,由此通过多步电离过程产生等离子体。

    METHODS AND APPARATUS FOR GENERATING STRONGLY-IONIZED PLASMAS WITH IONIZATIONAL INSTABILITIES
    3.
    发明公开
    METHODS AND APPARATUS FOR GENERATING STRONGLY-IONIZED PLASMAS WITH IONIZATIONAL INSTABILITIES 有权
    方法和设备产生强电离等离子体与IONISIERUNGSINSTABILITÄTEN

    公开(公告)号:EP1726190A2

    公开(公告)日:2006-11-29

    申请号:EP05723194.6

    申请日:2005-02-17

    申请人: Zond, Inc.

    发明人: CHISTYAKOV, Roman

    IPC分类号: H05H1/00

    摘要: Methods and apparatus for generating strongly-ionized plasmas are disclosed. A strongly-ionized plasma generator includes a chamber (104) for confining a feed gas (108). An anode (124) and a cathode assembly (116) are positioned inside the chamber. A pulsed power supply (102) is electrically connected between the anode (124) and the cathode assembly (116). The pulsed power supply (102) generates a multi-stage voltage pulse that includes a low-power stage with a first peak voltage having a magnitude and a rise time that is sufficient to generate a weakly-ionized plasma from the feed gas (108). The multi-stage voltage pulse also includes a transient stage with a second peak voltage having a magnitude and a rise time that is sufficient to shift an electron energy distribution in the weakly-ionized plasma to higher energies that increase an ionization rate which results in a rapid increase in electron density and a formation of a strongly-ionized plasma.

    HIGH-DENSITY PLASMA SOURCE
    4.
    发明公开
    HIGH-DENSITY PLASMA SOURCE 审中-公开
    等离子体源稠密等离子体

    公开(公告)号:EP1618589A2

    公开(公告)日:2006-01-25

    申请号:EP04749844.9

    申请日:2004-04-07

    申请人: Zond, Inc.

    发明人: CHISTYAKOV, Roman

    IPC分类号: H01J37/34 C23C14/34

    摘要: A plasma source including a cathode assembly having an inner cathode section and an outer cathode section. An anode is positioned adjacent to the outer cathode section so as to form a gap there between. A first power supply generates a first electric field across the gap between the anode and the outer cathode section. The first electric field ionizes a volume of feed gas that is located in the gap, thereby generating an initial plasma. A second power supply generates a second electric field proximate to the inner cathode section. The second electric field super-ionizes the initial plasma to generate a plasma comprising a higher density of ions than the initial plasma.

    PLASMA SOURCE WITH SEGMENTED MAGNETRON CATHODE
    7.
    发明公开
    PLASMA SOURCE WITH SEGMENTED MAGNETRON CATHODE 审中-公开
    PLASMAQULELE MIT SEGMENTIERTER MAGNETRON-KATHODE

    公开(公告)号:EP2143126A2

    公开(公告)日:2010-01-13

    申请号:EP08727324.9

    申请日:2008-04-10

    申请人: Zond, Inc.

    IPC分类号: H01J37/34

    摘要: A sputtering apparatus includes a chamber, an anode, a cathode assembly comprising target material, and a magnet. A platen supports a substrate. A power supply is electrically connected to the cathode assembly and generates a plurality of voltage pulse trains comprising at least a first and a second voltage pulse train. The first voltage pulse train generates a first discharge that causes sputtering of a first layer of target material having properties that are determined by at least one of a peak amplitude, a rise time, and a duration of pulses in the first voltage pulse train. The second voltage pulse train generates a second discharge from the feed gas that causes sputtering of a second layer of target material having properties that are determined by at least one of a peak amplitude, a rise time, and a duration of pulses in the second voltage pulse train.

    摘要翻译: 溅射装置包括用于容纳进料气体的室。 阳极位于室内。 包括目标材料的阴极组件邻近室内的阳极定位。 磁体定位成与阴极组件相邻。 支撑基板的压板位于与阴极组件相邻的位置。 电源的输出电连接到阴极组件。 电源产生包括至少第一和第二电压脉冲串的多个电压脉冲串。 第一电压脉冲串从进料气体产生第一次放电,其导致第一层靶材料的溅射,该第一层靶材料具有通过第一电压的峰值振幅,上升时间和脉冲持续时间中的至少一个确定的性质 脉冲列车 所述第二电压脉冲串从所述进料气体产生第二次放电,所述第二放电引起具有由所述第二电压中的峰值振幅,上升时间和脉冲持续时间中的至少一个确定的具有特性的第二层靶材料的溅射 脉冲列车

    GENERATION OF UNIFORMLY-DISTRIBUTED PLASMA
    8.
    发明公开
    GENERATION OF UNIFORMLY-DISTRIBUTED PLASMA 审中-公开
    生产分布均匀等离子体的

    公开(公告)号:EP1625603A2

    公开(公告)日:2006-02-15

    申请号:EP04750797.5

    申请日:2004-04-27

    发明人: CHISTYAKOV, Roman

    IPC分类号: H01J37/00

    摘要: Methods and apparatus for generating uniformly-distributed plasma are described. A plasma generator according to the invention includes a cathode assembly (204) that is positioned adjacent to an anode (216) and forming a gap (220) there between. A gas source (228) supplies a volume of feed gas and/or a volume of excited atoms to the gap between the cathode assembly and the anode. A power supply (202) generates an electric field across the gap between the cathode assembly and the anode. The electric field ionizes the volume of feed gas and/or the volume of excited atoms that is supplied to the gap, thereby creating a plasma in the gap.

    HIGH-POWER PULSED MAGNETICALLY ENHANCED PLASMA PROCESSING
    9.
    发明公开
    HIGH-POWER PULSED MAGNETICALLY ENHANCED PLASMA PROCESSING 有权
    与磁性增强效果脉冲高功率等离子处理系统

    公开(公告)号:EP1556882A2

    公开(公告)日:2005-07-27

    申请号:EP03776584.9

    申请日:2003-10-28

    申请人: Zond, Inc.

    发明人: CHISTYAKOV, Roman

    IPC分类号: H01J37/32

    摘要: A plasma processing apparatus according to the present invention includes an anode and a cathode. An ionization source generates a weakly-ionized plasma proximate to the cathode. A magnet is positioned to generate a magnetic field proximate to the weakly-ionized plasma. The magnetic field substantially traps electrons in the weakly-ionized plasma proximate to the cathode. A power supply produces an electric field in a gap between the anode and the cathode. The electric field generates excited atoms in the weakly-ionized plasma and generates secondary electrons from the cathode. The secondary electrons ionize the excited atoms, thereby creating a strongly-ionized plasma. A voltage supply applies a bias voltage to a substrate that is positioned proximate to the cathode that causes ions in the plurality of ions to impact a surface of the substrate in a manner that causes etching of the surface of the substrate.

    High-power pulsed magnetically enhanced plasma processing
    10.
    发明授权
    High-power pulsed magnetically enhanced plasma processing 有权
    与磁性增强效果脉冲高功率等离子处理系统

    公开(公告)号:EP1556882B1

    公开(公告)日:2011-03-30

    申请号:EP03776584.9

    申请日:2003-10-28

    申请人: Zond, Inc.

    发明人: CHISTYAKOV, Roman

    IPC分类号: H01J37/32

    摘要: A plasma processing apparatus according to the present invention includes an anode and a cathode. An ionization source generates a weakly-ionized plasma proximate to the cathode. A magnet is positioned to generate a magnetic field proximate to the weakly-ionized plasma. The magnetic field substantially traps electrons in the weakly-ionized plasma proximate to the cathode. A power supply produces an electric field in a gap between the anode and the cathode. The electric field generates excited atoms in the weakly-ionized plasma and generates secondary electrons from the cathode. The secondary electrons ionize the excited atoms, thereby creating a strongly-ionized plasma. A voltage supply applies a bias voltage to a substrate that is positioned proximate to the cathode that causes ions in the plurality of ions to impact a surface of the substrate in a manner that causes etching of the surface of the substrate.