公开(公告)号：EP1391940A4

公开(公告)日：2006-08-09

申请号：EP02718533

申请日：2002-04-11

申请人： ACRORAD CO LTD

发明人： MORIYAMA MIKI ,  MURAKAMI MASAKI ,  KYAN ATSUSHI ,  OHNO RYOICHI

IPC分类号： G01T1/24 ,  H01L27/14 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/09 ,  H01L31/108 ,  H01L31/118

CPC分类号： H01L31/022408 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/118

摘要： A Schottky barrier type radiation detecting element having a compound InxCdyTez comprising indium and cadmium, as means for applying a voltage to a compound semiconductor crystal principally comprising cadmium and tellurium, on one side of the compound semiconductor crystal. Percentage z of tellurium content in the compound InxCdyTez is preferably in the range of 42.9%-50% expressed in terms of the ratio of the number of atoms and percentage y of cadmium content in the compound InxCdyTez is preferably in the range of 0%-10% expressed in terms of the ratio of the number of atoms.