Cylinder surface treatment for monochlorosilane
    1.
    发明公开
    Cylinder surface treatment for monochlorosilane 审中-公开
    ZylinderoberflächenbehandlungfürMonochlorsilan

    公开(公告)号:EP2395127A1

    公开(公告)日:2011-12-14

    申请号:EP11169596.1

    申请日:2011-06-10

    IPC分类号: C23C16/448

    CPC分类号: C23C16/448

    摘要: The present invention is a container and a process for passivating the internal surface of the container to store monochlorosilane in a stable manner without degradation of the monochlorosilane. Various container surface modifications have been identified to reduce surface reactions to acceptable levels. Some of the described surface modifications result in significant reduction in monochlorosilane instability.

    摘要翻译: 本发明是一种用于钝化容器内表面的容器和方法,以稳定地存储一氯硅烷而不降解一氯硅烷。 已经确定了各种容器表面改性以将表面反应降低至可接受的水平。 一些所述的表面改性导致一氯硅烷不稳定性的显着降低。

    Halogenated Organoaminosilane Precursors and Methods for Depositing Films Comprising Same
    4.
    发明公开
    Halogenated Organoaminosilane Precursors and Methods for Depositing Films Comprising Same 有权
    用于沉积膜,从而卤化有机氨基硅烷前体和方法

    公开(公告)号:EP2574611A1

    公开(公告)日:2013-04-03

    申请号:EP12185977.1

    申请日:2012-09-25

    IPC分类号: C07F7/12 C23C16/30 H01L21/00

    摘要: Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I:

            X m R 1 n H p Si(NR 2 R 3 ) 4-m-n-p      I

    wherein X is selected from Cl, Br, I; R 1 is selected from linear or branched C 1 -C 10 alkyl group, a C 2 -C 12 alkenyl group, a C 2 -C 12 alkynyl group, a C 4 -C 10 cyclic alkyl, and a C 6 -C 10 aryl group; R 2 is selected from a linear or branched C 1 - C 10 alkyl, a C 3 - C 12 alkenyl group, a C 3 -C 12 alkynyl group, a C 4 - C 10 cyclic alkyl group, and a C 6 - C 10 aryl group; R 3 is selected from a branched C 3 - C 10 alkyl group, a C 3 -C 12 alkenyl group, a C 3 - C 12 alkynyl group, a C 4 - C 10 cyclic alkyl group, and a C 6 - C 10 aryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein R 2 and R 3 are linked or not linked to form a ring.

    摘要翻译: 在描述的前体和形成薄膜的方法。 在一个方面,提供了一种具有前体通式I:€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒXm个R 1N的ħp的Si(NR 2 R 3)4-MNP€ƒ€ƒ€ ƒ€ƒ€ƒiworin X为选自Cl,Br选择,I; 的R 1选自直链或支链的C 1 -C 10烷基,C 2 -C 12烯基,C 2 -C 12炔基,C 4 -C 10环烷基,和C 6 -C 10 芳基; R 2为选自直链或支链的C 1 - C 10的烷基,一个C 3 - C 12烯基,C 3 -C 12炔基,C 4 - C 10的环状烷基,和C 6 - C ^ 10芳基; C 10的烷基,C 3〜C 12烯基,C 3 - - C 12炔基,C 4 - C 10的环状烷基,和C 6 - ,R 3选自支链C 3选定的C 10 芳基; m是1或2; n为0,1或2; p为0,1或2; 且m + n + p是小于4,worin R 2和R 3连接或不连接形成环。