摘要:
The present invention is a container and a process for passivating the internal surface of the container to store monochlorosilane in a stable manner without degradation of the monochlorosilane. Various container surface modifications have been identified to reduce surface reactions to acceptable levels. Some of the described surface modifications result in significant reduction in monochlorosilane instability.
摘要:
A formulation comprising a first organosilane precursor, optionally a halogenation reagent, and a second organosilane precursor are described. At least a portion or all of the halogenation reagent may react with the first organosilane precursor to provide the second organosilane precursor. Methods of generating such formulation in situ from readily available pure materials are also provided. Further provided are methods of using the formulations as the precursor for a flowable vapor deposition process.
摘要:
Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I:
X m R 1 n H p Si(NR 2 R 3 ) 4-m-n-p I
wherein X is selected from Cl, Br, I; R 1 is selected from linear or branched C 1 -C 10 alkyl group, a C 2 -C 12 alkenyl group, a C 2 -C 12 alkynyl group, a C 4 -C 10 cyclic alkyl, and a C 6 -C 10 aryl group; R 2 is selected from a linear or branched C 1 - C 10 alkyl, a C 3 - C 12 alkenyl group, a C 3 -C 12 alkynyl group, a C 4 - C 10 cyclic alkyl group, and a C 6 - C 10 aryl group; R 3 is selected from a branched C 3 - C 10 alkyl group, a C 3 -C 12 alkenyl group, a C 3 - C 12 alkynyl group, a C 4 - C 10 cyclic alkyl group, and a C 6 - C 10 aryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein R 2 and R 3 are linked or not linked to form a ring.
摘要翻译:在描述的前体和形成薄膜的方法。 在一个方面,提供了一种具有前体通式I:€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒXm个R 1N的ħp的Si(NR 2 R 3)4-MNP€ƒ€ƒ€ ƒ€ƒ€ƒiworin X为选自Cl,Br选择,I; 的R 1选自直链或支链的C 1 -C 10烷基,C 2 -C 12烯基,C 2 -C 12炔基,C 4 -C 10环烷基,和C 6 -C 10 芳基; R 2为选自直链或支链的C 1 - C 10的烷基,一个C 3 - C 12烯基,C 3 -C 12炔基,C 4 - C 10的环状烷基,和C 6 - C ^ 10芳基; C 10的烷基,C 3〜C 12烯基,C 3 - - C 12炔基,C 4 - C 10的环状烷基,和C 6 - ,R 3选自支链C 3选定的C 10 芳基; m是1或2; n为0,1或2; p为0,1或2; 且m + n + p是小于4,worin R 2和R 3连接或不连接形成环。
摘要:
Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.
摘要:
A formulation comprising a first organosilane precursor, optionally a halogenation reagent, and a second organosilane precursor are described. At least a portion or all of the halogenation reagent may react with the first organosilane precursor to provide the second organosilane precursor. Methods of generating such formulation in situ from readily available pure materials are also provided. Further provided are methods of using the formulations as the precursor for a flowable vapor deposition process.
摘要:
Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.