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2.发明公开CVD-REAKTOR MIT VON EINEM GASSTROM DREHGELAGERTEN UND -ANGETRIEBENEN SUBSTRATHALTER 有权与所述旋转气流CVD反应器并存储-ANGETRIEBENEN衬底支架
公开(公告)号：EP1337700A1
公开(公告)日：2003-08-27
申请号：EP01978454.5
申请日：2001-10-25
申请人： Aixtron AG
CPC分类号： C30B25/12 , C23C16/4584 , Y10S117/901
摘要： The invention relates to a device for depositing layers, particularly crystalline layers, onto substrates. Said device comprises a process chamber (2) arranged in a reactor housing (1) where the floor (3) thereof, comprises at least one substrate holder (6) which is rotatably driven by a gas flow flowing in a feed pipe (5) associated with said floor. Said substrate holder is disposed in a bearing cavity (4) on a gas cushion and held in place thereby. The aim of the invention is to technologically improve the design of a substrate holder which is rotatably mounted in a gas flow, particularly in a linear cross-flowing process chamber. Said bearing cavity (4) is associated with a tray-shaped element (8) arranged below the outflow (7) of the feed pipe (5).
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3.发明公开
公开(公告)号：EP1334222A1
公开(公告)日：2003-08-13
申请号：EP01993719.2
申请日：2001-10-18
申请人： Aixtron AG
CPC分类号： C23C16/46 , C23C16/44 , C30B25/08 , C30B25/10 , Y10T117/10
摘要： The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates by means of reaction gases fed to a heated process chamber (14). Said process chamber (14) is formed by the cavity of an especially multi-part graphite tube (1) arranged in a reactor housing that especially comprises quartz walls. Said reactor housing, in the area of the process chamber (14), is enclosed by a high-frequency coil (13) and the space between the reactor housing wall (6) and the graphite tube (1) is filled with a graphite foam sleeve (5). In order to improve heat insulation, the graphite foam sleeve (5) is fully slit. The slot (7) is wider than the maximum thermal elongation of the graphite foam sleeve (5) in the peripheral direction to be expected when the device is heated up to process temperature.
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4.发明授权
公开(公告)号：EP1218573B1
公开(公告)日：2005-03-09
申请号：EP00965787.5
申请日：2000-08-24
申请人： Aixtron AG
摘要： The invention relates to a method and to a device for depositing SiC and/or SiCxGe1-x (X=0-1) semiconductor layers or related materials with large (electronic) energy gap and especially with a high binding energy (for example AlN, GaN) by means of a CVD method. The inventive method and the corresponding device are characterized in that at least one substrate is heated to a temperature of approximately 1100 to approximately 1800 °C, that the at least one substrate is rotated in an all-around actively heated flow channel reactor and that the material is deposited by homo- or hetero-epitaxy.
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5.发明授权
公开(公告)号：EP1334222B1
公开(公告)日：2004-05-19
申请号：EP01993719.2
申请日：2001-10-18
申请人： Aixtron AG
CPC分类号： C23C16/46 , C23C16/44 , C30B25/08 , C30B25/10 , Y10T117/10
摘要： The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates by means of reaction gases fed to a heated process chamber (14). Said process chamber (14) is formed by the cavity of an especially multi-part graphite tube (1) arranged in a reactor housing that especially comprises quartz walls. Said reactor housing, in the area of the process chamber (14), is enclosed by a high-frequency coil (13) and the space between the reactor housing wall (6) and the graphite tube (1) is filled with a graphite foam sleeve (5). In order to improve heat insulation, the graphite foam sleeve (5) is fully slit. The slot (7) is wider than the maximum thermal elongation of the graphite foam sleeve (5) in the peripheral direction to be expected when the device is heated up to process temperature.
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6.发明授权CVD-REAKTOR MIT VON EINEM GASSTROM DREHGELAGERTEN UND -ANGETRIEBENEN SUBSTRATHALTER 有权与所述旋转气流CVD反应器并存储-ANGETRIEBENEN衬底支架
公开(公告)号：EP1337700B1
公开(公告)日：2005-08-24
申请号：EP01978454.5
申请日：2001-10-25
申请人： Aixtron AG
CPC分类号： C30B25/12 , C23C16/4584 , Y10S117/901
摘要： The invention relates to a device for depositing layers, particularly crystalline layers, onto substrates. Said device comprises a process chamber (2) arranged in a reactor housing (1) where the floor (3) thereof, comprises at least one substrate holder (6) which is rotatably driven by a gas flow flowing in a feed pipe (5) associated with said floor. Said substrate holder is disposed in a bearing cavity (4) on a gas cushion and held in place thereby. The aim of the invention is to technologically improve the design of a substrate holder which is rotatably mounted in a gas flow, particularly in a linear cross-flowing process chamber. Said bearing cavity (4) is associated with a tray-shaped element (8) arranged below the outflow (7) of the feed pipe (5).
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7.发明公开
公开(公告)号：EP1218573A1
公开(公告)日：2002-07-03
申请号：EP00965787.5
申请日：2000-08-24
申请人： Aixtron AG
摘要： The invention relates to a method and to a device for depositing SiC and/or SiCxGe1-x (X=0-1) semiconductor layers or related materials with large (electronic) energy gap and especially with a high binding energy (for example AlN, GaN) by means of a CVD method. The inventive method and the corresponding device are characterized in that at least one substrate is heated to a temperature of approximately 1100 to approximately 1800 °C, that the at least one substrate is rotated in an all-around actively heated flow channel reactor and that the material is deposited by homo- or hetero-epitaxy.
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